公开(公告)号：US11652196B2

公开(公告)日：2023-05-16

申请号：US17024833

申请日：2020-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunghee Kim ,  Donghwan Kim ,  Sungwook Kim ,  Yong Namkung ,  Jenghun Suh ,  Jaephil Shim

IPC: H01L33/62 ,  H01L33/00 ,  H01L23/00 ,  H01L25/075 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/58

CPC classification number: H01L33/62 ,  H01L24/29 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/0093 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/58 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29255 ,  H01L2224/29263 ,  H01L2224/29269 ,  H01L2224/29287 ,  H01L2224/29293 ,  H01L2224/83894 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A display module and a manufacturing method thereof are provided. The manufacturing method may include forming an epitaxial film comprising a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer, attaching the epitaxial film to an intermediate substrate comprising a conductive material, patterning the epitaxial film to form a light emitting diode (LED) and coupling the LED to a driving circuit layer through the conductive material.

公开(公告)号：US20170326640A1

公开(公告)日：2017-11-16

申请号：US15523830

申请日：2015-05-08

Applicant: Heraeus Deutschland GmbH & Co. KG

Inventor： Wolfgang SCHMITT ,  Thomas KREBS ,  Michael SCHÄFER ,  Susanne Klaudia DUCH ,  Jens NACHREINER

IPC: B22F1/00 ,  H01L23/00 ,  B22F3/10 ,  B22F7/06

CPC classification number: B22F1/0062 ,  B22F1/0011 ,  B22F1/0055 ,  B22F3/10 ,  B22F7/062 ,  B22F7/064 ,  B22F7/08 ,  B22F2301/255 ,  C22C5/00 ,  C22C5/06 ,  C22C9/00 ,  C22C21/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/27505 ,  H01L2224/29224 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29255 ,  H01L2224/29264 ,  H01L2224/29269 ,  H01L2224/29294 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/32145 ,  H01L2224/8384 ,  H01L2924/00014

Abstract: A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm−1.

公开(公告)号：US09543265B2

公开(公告)日：2017-01-10

申请号：US14178847

申请日：2014-02-12

Applicant: Hitachi, Ltd.

Inventor： Motomune Kodama ,  Takashi Naito ,  Tadashi Fujieda ,  Yuichi Sawai ,  Takuya Aoyagi ,  Masanori Miyagi

IPC: H01F3/00 ,  H01L23/00 ,  C04B35/645 ,  C04B37/02

CPC classification number: H01L24/29 ,  C04B35/645 ,  C04B37/026 ,  C04B2237/10 ,  C04B2237/12 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/55 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/86 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2731 ,  H01L2224/29082 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29169 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/29218 ,  H01L2224/29224 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29269 ,  H01L2224/29288 ,  H01L2224/29294 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29369 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83487 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/15788 ,  H01L2924/351 ,  Y10T428/265 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/00

Abstract: Disclosed is a jointed body wherein multiple base members are jointed to each other through a jointing layer, and at least one of the base members is a base member of a ceramic material, semiconductor or glass. The joint material layer contains a metal and an oxide. The oxide contains V and Te, and is present between the metal and the base members. Disclosed is also a joint material in the form of a paste containing an oxide glass containing V and Te, metal particles, and a solvent; in the form of a foil piece or plate in which particles of an oxide glass containing V and Te are embedded; or in the form of a foil piece or plate containing a layer of an oxide glass containing V and Te, and a layer of a metal.

Abstract translation: 公开了一种接合体，其中多个基底构件通过接合层彼此接合，并且至少一个基底构件是陶瓷材料，半导体或玻璃的基底构件。 接合材料层含有金属和氧化物。 氧化物含有V和Te，并且存在于金属和基体之间。 还公开了含有含有V和Te，金属颗粒和溶剂的氧化物玻璃的糊状物的接合材料; 以包含V和Te的氧化物玻璃的颗粒嵌入的箔片或板的形式; 或以包含含有V和Te的氧化物玻璃层和金属层的箔片或板的形式。

公开(公告)号：US20150035137A1

公开(公告)日：2015-02-05

申请号：US14378226

申请日：2013-02-14

Applicant: MTSUBISHI MATERIALS CORPORATION

Inventor： Shuji Nishimoto ,  Kimihito Nishikawa ,  Yoshiyuki Nagatomo

IPC: H01L23/00 ,  B23K1/19 ,  B23K1/20 ,  H01L23/367

CPC classification number: H01L24/33 ,  B23K1/0016 ,  B23K1/19 ,  B23K1/203 ,  B23K35/0222 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/0272 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/36 ,  B23K35/3602 ,  B23K35/3607 ,  H01L23/367 ,  H01L23/3735 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/03505 ,  H01L2224/04026 ,  H01L2224/27505 ,  H01L2224/29005 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29239 ,  H01L2224/29286 ,  H01L2224/29299 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83539 ,  H01L2224/83686 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01049 ,  H01L2924/207 ,  H01L2924/05341 ,  H01L2924/05442 ,  H01L2924/053 ,  H01L2924/206

Abstract: There are provided a solder joint structure, a power module using the joint structure, a power module substrate with a heat sink and a method of manufacturing the same, as well as a solder base layer forming paste which is disposed and fired on a metal member to thereby react with an oxide film generated on the surface of the metal member and form the solder base layer on the metal member, capable of suppressing the occurrence of waviness and wrinkles on the surface of the metal member even at the time of loading the power cycle and heat cycle and improving the joint reliability with a joint member.

Abstract translation: 提供了焊接结构，使用接合结构的功率模块，具有散热器的功率模块基板及其制造方法，以及焊接基底层形成用糊料，其设置在金属部件上 从而与在金属构件的表面上产生的氧化膜反应并在金属构件上形成焊料基底层，即使在加载电力时也能够抑制金属构件的表面上的波纹和褶皱的发生 循环和热循环，并通过联合成员提高联合可靠性。

公开(公告)号：US11676936B2

公开(公告)日：2023-06-13

申请号：US17050113

申请日：2019-03-27

Applicant: NITTO DENKO CORPORATION

Inventor： Ryota Mita ,  Tomoaki Ichikawa

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L24/83 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2221/68336 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/29286 ,  H01L2224/32225 ,  H01L2224/48225 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0541 ,  H01L2924/1033 ,  H01L2924/10272

Abstract: A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

公开(公告)号：US20190206759A1

公开(公告)日：2019-07-04

申请号：US16295962

申请日：2019-03-07

Applicant: NXP USA, Inc.

Inventor： Lakshminarayan Viswanathan ,  Mahesh K. Shah ,  Lu Li ,  David Abdo ,  Geoffrey Tucker ,  Carl Emil D'Acosta ,  Jaynal A. Molla ,  Justin Eugene Poarch ,  Paul Hart

IPC: H01L23/367 ,  H01L21/48 ,  H01L23/13 ,  H01L23/528 ,  H01L23/00

CPC classification number: H01L23/367 ,  H01L21/4853 ,  H01L21/4867 ,  H01L21/4882 ,  H01L23/047 ,  H01L23/13 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/4334 ,  H01L23/5286 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L2023/4043 ,  H01L2023/405 ,  H01L2023/4062 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/73265 ,  H01L2224/8384

Abstract: Microelectronic systems and components having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems and components. In various embodiments, the microelectronic system includes a substrate having a frontside, a socket cavity, and inner cavity sidewalls defining the socket cavity. A microelectronic component is seated on the frontside of the substrate such that a heat dissipation post, which projects from the microelectronic component, is received in the socket cavity and separated from the inner cavity sidewalls by a peripheral clearance. The microelectronic system further includes a bond layer contacting the inner cavity sidewalls, contacting an outer peripheral portion of the heat dissipation post, and at least partially filling the peripheral clearance.

公开(公告)号：US20190157236A1

公开(公告)日：2019-05-23

申请号：US16217605

申请日：2018-12-12

Applicant: ROHM CO., LTD.

Inventor： Hiroaki MATSUBARA ,  Yasumasa KASUYA ,  Taro NISHIOKA

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/544 ,  H01L23/495

CPC classification number: H01L24/32 ,  H01L21/4828 ,  H01L23/3107 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/544 ,  H01L23/564 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/06155 ,  H01L2224/29139 ,  H01L2224/29239 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29499 ,  H01L2224/32013 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/05442 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/207

Abstract: An electronic device includes an electronic element, a plurality of first sub-electrodes arrayed in a first direction, a plurality of second sub-electrodes arrayed in a second direction that is orthogonal to the first direction, a dummy electrode, and a sealing resin. The sealing resin has a resin back surface from which the plurality of first sub-electrodes, the plurality of second sub-electrodes and the dummy electrode are exposed. The plurality of second sub-electrodes are located further in the first direction than any of the plurality of first sub-electrodes. The plurality of first sub-electrodes are located further in the second direction than any of the plurality of second sub-electrodes. The dummy electrode is located further in the first direction than any of the plurality of first sub-electrodes, and is located further in the second direction than any of the plurality of second sub-electrodes.

公开(公告)号：US20180242451A1

公开(公告)日：2018-08-23

申请号：US15439754

申请日：2017-02-22

Applicant: XEROX CORPORATION

Inventor： Naveen CHOPRA ,  Barkev KEOSHKERIAN ,  Chad Steven SMITHSON ,  Kurt I. HALFYARD ,  Michelle N. CHRETIEN

IPC: H05K1/09 ,  C09D11/52 ,  C09D11/30 ,  C09D11/03 ,  H05K1/03 ,  H01L23/00 ,  H01L23/498

CPC classification number: H05K1/097 ,  C09D11/03 ,  C09D11/037 ,  C09D11/30 ,  C09D11/52 ,  H01B1/02 ,  H01B1/16 ,  H01B1/22 ,  H01L23/49838 ,  H01L23/4985 ,  H01L23/49894 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/29239 ,  H01L2224/32227 ,  H01L2224/75155 ,  H01L2224/8384 ,  H01L2924/1203 ,  H01L2924/1304 ,  H01L2924/14 ,  H05K3/3431 ,  H05K3/3457 ,  H05K3/3484 ,  H05K3/3494 ,  H05K2201/0257

Abstract: The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

公开(公告)号：US20170236768A1

公开(公告)日：2017-08-17

申请号：US15501374

申请日：2015-09-09

Applicant: HITACHI, LTD.

Inventor： Takashi NAITO ,  Motomune KODAMA ,  Takuya AOYAGI ,  Shigeru KIKUCHI ,  Takashi NOGAWA ,  Mutsuhiro MORI ,  Eiichi IDE ,  Toshiaki MORITA ,  Akitoyo KONNO ,  Taigo ONODERA ,  Tatsuya MIYAKE ,  Akihiko MIYAUCHI

IPC: H01L23/373 ,  H01L23/00 ,  C03C8/02 ,  C03C8/24 ,  C03C8/08

CPC classification number: H01L23/3733 ,  C03C3/122 ,  C03C3/125 ,  C03C3/21 ,  C03C8/02 ,  C03C8/08 ,  C03C8/18 ,  C03C8/24 ,  C09J1/00 ,  C09J11/04 ,  H01L21/52 ,  H01L23/3731 ,  H01L23/3735 ,  H01L24/29 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/29211 ,  H01L2224/29224 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/29287 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

公开(公告)号：US20050029666A1

公开(公告)日：2005-02-10

申请号：US10487990

申请日：2002-08-27

Applicant: Yasutoshi Kurihara ,  Yoshimasa Takahashi ,  Tsuneo Endoh ,  Mikio Negishi ,  Masashi Yamaura ,  Hirokazu Nakajima ,  Yosuke Sakurai ,  Hironori Kodama

Inventor： Yasutoshi Kurihara ,  Yoshimasa Takahashi ,  Tsuneo Endoh ,  Mikio Negishi ,  Masashi Yamaura ,  Hirokazu Nakajima ,  Yosuke Sakurai ,  Hironori Kodama

IPC: B23K35/02 ,  B23K35/26 ,  H01L21/56 ,  H01L21/60 ,  H01L23/31 ,  H01L23/367 ,  H01L23/495 ,  H01L23/498 ,  H01L23/552 ,  H01L23/64 ,  H05K3/28 ,  H05K3/34 ,  H01L23/48

CPC classification number: H01L24/85 ,  B23K35/0244 ,  B23K35/262 ,  C04B37/026 ,  C04B2237/12 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/127 ,  C04B2237/368 ,  C04B2237/401 ,  C04B2237/407 ,  C04B2237/708 ,  C04B2237/72 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/49575 ,  H01L23/49805 ,  H01L23/552 ,  H01L23/642 ,  H01L24/01 ,  H01L24/13 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/29218 ,  H01L2224/29223 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29249 ,  H01L2224/29255 ,  H01L2224/29264 ,  H01L2224/29266 ,  H01L2224/2927 ,  H01L2224/29272 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/35121 ,  H05K3/284 ,  H05K3/3442 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/10636 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01029

Abstract: A semiconductor device, in which a solder layer bonding chip parts and wiring members are enclosed with the resin layer, and the solder layer is comprised of a compound body in which metal powder is distributed in the matrix metal, is disclosed. When a semiconductor device in which the chip parts are installed in the wiring member with the solders, the soldering part is sealed with the resin is mounted secondly on the external wiring member, the outflow of the solders and the short circuit due to the outflow, the disconnections, and the displacement of the chip parts can be prevented.

Abstract translation: 公开了一种半导体器件，其中将粘合芯片部件和布线部件的焊料层封装在树脂层中，并且焊料层由金属粉末分布在基体金属中的复合体构成。 当将其中芯片部件与焊料一起安装在布线部件中的半导体器件时，将树脂密封的焊接部件二次安装在外部布线部件上，由于流出而导致焊料的流出和短路， 可以防止切断部件和芯片部件的位移。