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    POWER SEMICONDUCTOR APPARATUS
    1.
    发明申请
    POWER SEMICONDUCTOR APPARATUS 有权

    公开(公告)号：US20220359434A1

    公开(公告)日：2022-11-10

    申请号：US17622588

    申请日：2020-07-08

    Applicant: HITACHI, LTD.

    Inventor： Junpei KUSUKAWA ,  Eiichi IDE

    IPC: H01L23/60 ,  H01L25/16

    Abstract: A power semiconductor apparatus provided with a first conductor section connected to a direct-current terminal for transmitting direct-current power; a second conductor section connected to an alternating-current terminal for transmitting alternating-current power; a semiconductor element which is disposed between the first conductor section and the second conductor section and is for converting the direct-current power to the alternating-current power; and an interposition section disposed between the first conductor section and the second conductor section, in which the interposition section has a first conductor layer connected to the first conductor section, a second conductor layer connected to the second conductor section, and a plurality of insulation layers disposed between the first conductor layer and the second conductor layer, with one or a plurality of third conductor layers sandwiched between the plurality of insulation layers.

    Power-Module Device, Power Conversion Device, and Method for Manufacturing Power-Module Device
    2.
    发明申请
    Power-Module Device, Power Conversion Device, and Method for Manufacturing Power-Module Device 审中-公开

    公开(公告)号：US20170325360A1

    公开(公告)日：2017-11-09

    申请号：US15319640

    申请日：2014-06-25

    Applicant: Hitachi, Ltd.

    Inventor： Hisashi TANIE ,  Eiichi IDE ,  Hiroshi SHINTANI ,  Atsuo NISHIHARA

    IPC: H05K7/20 ,  H05K5/02 ,  H05K5/06 ,  H05K13/00

    CPC classification number: H05K7/20418 ,  H01L23/051 ,  H01L23/28 ,  H01L23/3121 ,  H01L23/4012 ,  H01L23/473 ,  H01L25/07 ,  H01L25/18 ,  H01L2924/0002 ,  H05K5/0247 ,  H05K5/062 ,  H05K7/1432 ,  H05K7/20927 ,  H05K13/00 ,  H01L2924/00

    Abstract: In order to efficiently cool a heat-generating semiconductor element, it is desirable to cool a power semiconductor element from both surfaces. Therefore, in order to cool multiple power semiconductor elements, it is an effective way to alternately arrange a semiconductor component having the incorporated semiconductor element and a cooling device. A power conversion device for handling a high-power voltage needs to ensure pressure resistance between semiconductor elements or circuits inside the device. It is an effective way to seal the semiconductor component with a sealing material such as a silicone gel. Therefore, it is necessary to install the semiconductor component or the circuit having the incorporated semiconductor element, in a case from which a liquid silicone gel prior to curing does not leak even if the gel is injected. For these reasons, an object to be achieved by the invention is that the semiconductor element can be cooled from both surfaces by alternately arranging the semiconductor component having the incorporated semiconductor element and the cooling device. The above-described object can be achieved as follows. A substantially rectangular thin plate is subjected to mountain bending and valley bending so as to form a shape having as many recesses as the number of the mounted semiconductor components having the incorporated semiconductor element. Concurrently, a lateral side in a direction orthogonal to the above-described bending direction is bent so as to dispose the case in which all edges configuring an outer shape of the thin plate are arranged on substantially the same plane. The semiconductor component having the incorporated semiconductor element is arranged at a position serving as the recess of the case. The cooling devices are arranged so as to interpose the semiconductor component having the incorporated semiconductor element via the case. The semiconductor component having the incorporated semiconductor element is sealed with a silicone gel. In addition, preferably, the case is configured to include metal which has high heat conductivity. More preferably, the case is configured to include aluminum, copper, or an alloy whose principal components are both of these.

    Power Conversion Apparatus
    3.
    发明申请
    Power Conversion Apparatus 有权
    电力转换装置

    公开(公告)号：US20170069562A1

    公开(公告)日：2017-03-09

    申请号：US15123355

    申请日：2014-03-28

    Applicant: Hitachi, Ltd.

    Inventor： Eiichi IDE ,  Hiroshi SHINTANI ,  Hisashi TANIE

    IPC: H01L23/373 ,  H01L23/528 ,  H01L23/051 ,  H01L23/00 ,  H01L23/367

    CPC classification number: H01L23/3736 ,  H01L23/051 ,  H01L23/367 ,  H01L23/3672 ,  H01L23/3735 ,  H01L23/40 ,  H01L23/467 ,  H01L23/473 ,  H01L23/528 ,  H01L23/562 ,  H01L24/33 ,  H01L25/00 ,  H01L2924/13055 ,  H01L2924/00

    Abstract: A power conversion apparatus includes: a circuit body including a switching device; a base member forming a first concave portion and a cooling surface; and a wedge inserted in the first concave portion of the base member. The first concave portion of the base member is formed by a substrate portion forming the cooling surface, a first wall disposed on the opposite side of the substrate portion from the cooling surface, and an intermediate portion interconnecting the first wall and the substrate portion. The first wall forms an insertion space for insertion of the wedge, and a heat transfer plane forming a heat dissipating surface and a heat transfer path of the circuit body. The intermediate portion is plastically deformed by inserting the wedge into the insertion space, thus causing the first wall to be displaced toward the location of the circuit body.

    Abstract translation: 电力转换装置包括：电路体，包括开关装置; 形成第一凹部和冷却面的基部构件; 以及插入到所述基部构件的所述第一凹部中的楔子。 基部件的第一凹部由形成冷却表面的基板部分，设置在与冷却表面相对的基板部分相对侧的第一壁和互连第一壁和基板部分的中间部分形成。 第一壁形成用于插入楔的插入空间和形成电路体的散热面和热传递路径的传热平面。 中间部分通过将楔插入插入空间而塑性变形，从而使第一壁向电路主体的位置移动。

    POWER CONVERTER
    7.
    发明申请
    POWER CONVERTER 审中-公开

    公开(公告)号：US20180146577A1

    公开(公告)日：2018-05-24

    申请号：US15576523

    申请日：2015-05-27

    Applicant: HITACHI, LTD.

    Inventor： Eiichi IDE ,  Akitoyo KONNO ,  Shinji SUGIMOTO

    IPC: H05K7/20 ,  H02M7/00 ,  H02K11/33 ,  H02K9/19

    CPC classification number: H05K7/20927 ,  H02K9/19 ,  H02K11/33 ,  H02M1/08 ,  H02M7/003 ,  H02M7/21 ,  H02M7/217 ,  H02M7/5395 ,  H02P27/08 ,  H05K7/20272

    Abstract: An object of the invention is to provide a power converter that can be reduced in size. To achieve this, a power converter according to the invention includes: water passages arranged radially from an assumed central axis, each being trapezoid-shaped in cross section; and power modules placed between the water passages such that each of the power modules is sandwiched from both surfaces thereof by the water passages. Each of the power modules has an output terminal and positive and negative terminals on an end face located in a centrifugal direction side with respect to the assumed central axis. Any of the power modules and an adjacent one of the power modules are set in a front-back inverted manner.

    Power-Module Device and Power Conversion Device
    8.
    发明申请
    Power-Module Device and Power Conversion Device 审中-公开

    公开(公告)号：US20170084515A1

    公开(公告)日：2017-03-23

    申请号：US15312053

    申请日：2014-06-20

    Applicant: Hitachi, Ltd.

    Inventor： Hiroshi SHINTANI ,  Eiichi IDE ,  Atsuo NISHIHARA

    IPC: H01L23/427 ,  H02M3/158 ,  H01L21/48 ,  H01L25/18 ,  H01L23/31

    CPC classification number: H01L23/427 ,  H01L21/4882 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/4012 ,  H01L23/473 ,  H01L25/07 ,  H01L25/18 ,  H01L2924/0002 ,  H02M3/158 ,  H05K7/20927 ,  H05K7/20936 ,  H01L2924/00

    Abstract: In order to efficiently cool a heat-generating semiconductor element, it is desirable to cool a power semiconductor element from both surfaces. Therefore, in order to cool multiple power semiconductor elements, it is an effective way to alternately arrange a semiconductor component having the incorporated semiconductor element and a cooling device. In addition, it is desirable to eliminate a gap and to reduce contact heat resistance between members in contact with each other, by suitably pressurizing a portion between the semiconductor component having the incorporated semiconductor element and the cooling device. In this case, if rigidity of a case in which the semiconductor component having the incorporated semiconductor element or the cooling device is installed is high in a pressurizing direction, the rigidity hinders a heat transfer point from being suitably pressurized. For these reasons, it is required to provide the case in which the semiconductor component having the incorporated semiconductor element and the cooling device can be alternately arranged, and in which the rigidity in the pressurizing direction is low. A power conversion device for handling a high-power voltage needs to ensure pressure resistance between the semiconductor elements or circuits inside the device. It is an effective way to seal the semiconductor component with a sealing material such as a silicone gel. Therefore, it is necessary to install the semiconductor component or the circuit having the incorporated semiconductor element, in a case from which the liquid silicone gel prior to curing does not leak even if the gel is injected. For these reasons, an object to be achieved by the invention is to provide the power conversion device in which the semiconductor element can be cooled from both surfaces by alternately arranging the semiconductor component having the incorporated semiconductor element and the cooling device, and which includes the case in which the rigidity in the pressurizing direction is low and which can be sealed while leakage is prevented even if the liquid silicone gel is injected. The above-described object can be achieved as follows. A thin plate is formed in a shape having as many recesses as the number of the mounted semiconductor components having the incorporated semiconductor element. Concurrently, a case is disposed so that all edges configuring an outer shape of the thin plate are arranged on substantially the same plane. The semiconductor component having the incorporated semiconductor element is arranged at a position serving as the recess of the case. The cooling devices are arranged so as to interpose the semiconductor component having the incorporated semiconductor element via the case. The semiconductor component having the incorporated semiconductor element is sealed with a silicone gel.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130299962A1

    公开(公告)日：2013-11-14

    申请号：US13870216

    申请日：2013-04-25

    Applicant: HITACHI, LTD.

    Inventor： Eiichi IDE ,  Toshiaki MORITA

    IPC: H01L23/34

    CPC classification number: H01L23/34 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L2224/32245 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

    Abstract: A semiconductor device includes an IGBT as a vertical semiconductor element provided between first, and second lead frames, in pairs, the first, and second lead frames being opposed to each other, first and second sintered-metal bonding layers provided on first and second bonding surfaces of the IGBT, in pairs, respectively, a through-hole opened in the second lead frame, and a heat-release member having a surface on one side thereof, bonded to a second sintered-metal bonding layer of the second bonding surface while a side (lateral face) of a surface of the heat-release member, on the other side thereof, being fitted into the through-hole. A solder layer is formed in a gap between an outer-side wall of the side of the surface of the heat-release member, on the other side thereof, and an inner-side wall of the through-hole.

    Abstract translation: 半导体器件包括：IGBT作为垂直半导体元件，设置在成对的第一和第二引线框之间，第一和第二引线框彼此相对;第一和第二烧结金属接合层，设置在第一和第二接合 IGBT的表面分别成对地形成在第二引线框架中开口的通孔，以及在其一侧具有表面的散热构件，其结合到第二接合表面的第二烧结金属接合层，同时 散热构件的另一侧的表面的侧面（侧面）嵌合在通孔中。 在散热构件的表面的另一侧的外侧壁与通孔的内侧壁之间的间隙中形成焊料层。

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