公开(公告)号：US11676936B2

公开(公告)日：2023-06-13

申请号：US17050113

申请日：2019-03-27

Applicant: NITTO DENKO CORPORATION

Inventor： Ryota Mita ,  Tomoaki Ichikawa

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L24/83 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2221/68336 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/29286 ,  H01L2224/32225 ,  H01L2224/48225 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0541 ,  H01L2924/1033 ,  H01L2924/10272

Abstract: A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

公开(公告)号：US20190206759A1

公开(公告)日：2019-07-04

申请号：US16295962

申请日：2019-03-07

Applicant: NXP USA, Inc.

Inventor： Lakshminarayan Viswanathan ,  Mahesh K. Shah ,  Lu Li ,  David Abdo ,  Geoffrey Tucker ,  Carl Emil D'Acosta ,  Jaynal A. Molla ,  Justin Eugene Poarch ,  Paul Hart

IPC: H01L23/367 ,  H01L21/48 ,  H01L23/13 ,  H01L23/528 ,  H01L23/00

CPC classification number: H01L23/367 ,  H01L21/4853 ,  H01L21/4867 ,  H01L21/4882 ,  H01L23/047 ,  H01L23/13 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/4334 ,  H01L23/5286 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L2023/4043 ,  H01L2023/405 ,  H01L2023/4062 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/73265 ,  H01L2224/8384

Abstract: Microelectronic systems and components having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems and components. In various embodiments, the microelectronic system includes a substrate having a frontside, a socket cavity, and inner cavity sidewalls defining the socket cavity. A microelectronic component is seated on the frontside of the substrate such that a heat dissipation post, which projects from the microelectronic component, is received in the socket cavity and separated from the inner cavity sidewalls by a peripheral clearance. The microelectronic system further includes a bond layer contacting the inner cavity sidewalls, contacting an outer peripheral portion of the heat dissipation post, and at least partially filling the peripheral clearance.

公开(公告)号：US20170236768A1

公开(公告)日：2017-08-17

申请号：US15501374

申请日：2015-09-09

Applicant: HITACHI, LTD.

Inventor： Takashi NAITO ,  Motomune KODAMA ,  Takuya AOYAGI ,  Shigeru KIKUCHI ,  Takashi NOGAWA ,  Mutsuhiro MORI ,  Eiichi IDE ,  Toshiaki MORITA ,  Akitoyo KONNO ,  Taigo ONODERA ,  Tatsuya MIYAKE ,  Akihiko MIYAUCHI

IPC: H01L23/373 ,  H01L23/00 ,  C03C8/02 ,  C03C8/24 ,  C03C8/08

CPC classification number: H01L23/3733 ,  C03C3/122 ,  C03C3/125 ,  C03C3/21 ,  C03C8/02 ,  C03C8/08 ,  C03C8/18 ,  C03C8/24 ,  C09J1/00 ,  C09J11/04 ,  H01L21/52 ,  H01L23/3731 ,  H01L23/3735 ,  H01L24/29 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/29211 ,  H01L2224/29224 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/29287 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

公开(公告)号：US20170084567A1

公开(公告)日：2017-03-23

申请号：US15363947

申请日：2016-11-29

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener

IPC: H01L23/00 ,  B23K35/02 ,  B23K35/36 ,  B23K1/00

CPC classification number: H01L24/29 ,  B23K1/0016 ,  B23K35/007 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/32 ,  B23K35/36 ,  B23K2101/40 ,  B23K2103/172 ,  B32B15/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05647 ,  H01L2224/05747 ,  H01L2224/05893 ,  H01L2224/06181 ,  H01L2224/271 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/27442 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29157 ,  H01L2224/29193 ,  H01L2224/29247 ,  H01L2224/29271 ,  H01L2224/29393 ,  H01L2224/29447 ,  H01L2224/29471 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32058 ,  H01L2224/32245 ,  H01L2224/831 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83447 ,  H01L2224/83693 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/00012

Abstract: A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

公开(公告)号：US20050029666A1

公开(公告)日：2005-02-10

申请号：US10487990

申请日：2002-08-27

Applicant: Yasutoshi Kurihara ,  Yoshimasa Takahashi ,  Tsuneo Endoh ,  Mikio Negishi ,  Masashi Yamaura ,  Hirokazu Nakajima ,  Yosuke Sakurai ,  Hironori Kodama

Inventor： Yasutoshi Kurihara ,  Yoshimasa Takahashi ,  Tsuneo Endoh ,  Mikio Negishi ,  Masashi Yamaura ,  Hirokazu Nakajima ,  Yosuke Sakurai ,  Hironori Kodama

IPC: B23K35/02 ,  B23K35/26 ,  H01L21/56 ,  H01L21/60 ,  H01L23/31 ,  H01L23/367 ,  H01L23/495 ,  H01L23/498 ,  H01L23/552 ,  H01L23/64 ,  H05K3/28 ,  H05K3/34 ,  H01L23/48

CPC classification number: H01L24/85 ,  B23K35/0244 ,  B23K35/262 ,  C04B37/026 ,  C04B2237/12 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/127 ,  C04B2237/368 ,  C04B2237/401 ,  C04B2237/407 ,  C04B2237/708 ,  C04B2237/72 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/49575 ,  H01L23/49805 ,  H01L23/552 ,  H01L23/642 ,  H01L24/01 ,  H01L24/13 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/29218 ,  H01L2224/29223 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29249 ,  H01L2224/29255 ,  H01L2224/29264 ,  H01L2224/29266 ,  H01L2224/2927 ,  H01L2224/29272 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/35121 ,  H05K3/284 ,  H05K3/3442 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/10636 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01029

Abstract: A semiconductor device, in which a solder layer bonding chip parts and wiring members are enclosed with the resin layer, and the solder layer is comprised of a compound body in which metal powder is distributed in the matrix metal, is disclosed. When a semiconductor device in which the chip parts are installed in the wiring member with the solders, the soldering part is sealed with the resin is mounted secondly on the external wiring member, the outflow of the solders and the short circuit due to the outflow, the disconnections, and the displacement of the chip parts can be prevented.

Abstract translation: 公开了一种半导体器件，其中将粘合芯片部件和布线部件的焊料层封装在树脂层中，并且焊料层由金属粉末分布在基体金属中的复合体构成。 当将其中芯片部件与焊料一起安装在布线部件中的半导体器件时，将树脂密封的焊接部件二次安装在外部布线部件上，由于流出而导致焊料的流出和短路， 可以防止切断部件和芯片部件的位移。

公开(公告)号：US20170326640A1

公开(公告)日：2017-11-16

申请号：US15523830

申请日：2015-05-08

Applicant: Heraeus Deutschland GmbH & Co. KG

Inventor： Wolfgang SCHMITT ,  Thomas KREBS ,  Michael SCHÄFER ,  Susanne Klaudia DUCH ,  Jens NACHREINER

IPC: B22F1/00 ,  H01L23/00 ,  B22F3/10 ,  B22F7/06

CPC classification number: B22F1/0062 ,  B22F1/0011 ,  B22F1/0055 ,  B22F3/10 ,  B22F7/062 ,  B22F7/064 ,  B22F7/08 ,  B22F2301/255 ,  C22C5/00 ,  C22C5/06 ,  C22C9/00 ,  C22C21/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/27505 ,  H01L2224/29224 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29255 ,  H01L2224/29264 ,  H01L2224/29269 ,  H01L2224/29294 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/32145 ,  H01L2224/8384 ,  H01L2924/00014

Abstract: A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm−1.

公开(公告)号：US09543265B2

公开(公告)日：2017-01-10

申请号：US14178847

申请日：2014-02-12

Applicant: Hitachi, Ltd.

Inventor： Motomune Kodama ,  Takashi Naito ,  Tadashi Fujieda ,  Yuichi Sawai ,  Takuya Aoyagi ,  Masanori Miyagi

IPC: H01F3/00 ,  H01L23/00 ,  C04B35/645 ,  C04B37/02

CPC classification number: H01L24/29 ,  C04B35/645 ,  C04B37/026 ,  C04B2237/10 ,  C04B2237/12 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/55 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/86 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2731 ,  H01L2224/29082 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29169 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/29218 ,  H01L2224/29224 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29269 ,  H01L2224/29288 ,  H01L2224/29294 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29369 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83487 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/15788 ,  H01L2924/351 ,  Y10T428/265 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/00

Abstract: Disclosed is a jointed body wherein multiple base members are jointed to each other through a jointing layer, and at least one of the base members is a base member of a ceramic material, semiconductor or glass. The joint material layer contains a metal and an oxide. The oxide contains V and Te, and is present between the metal and the base members. Disclosed is also a joint material in the form of a paste containing an oxide glass containing V and Te, metal particles, and a solvent; in the form of a foil piece or plate in which particles of an oxide glass containing V and Te are embedded; or in the form of a foil piece or plate containing a layer of an oxide glass containing V and Te, and a layer of a metal.

Abstract translation: 公开了一种接合体，其中多个基底构件通过接合层彼此接合，并且至少一个基底构件是陶瓷材料，半导体或玻璃的基底构件。 接合材料层含有金属和氧化物。 氧化物含有V和Te，并且存在于金属和基体之间。 还公开了含有含有V和Te，金属颗粒和溶剂的氧化物玻璃的糊状物的接合材料; 以包含V和Te的氧化物玻璃的颗粒嵌入的箔片或板的形式; 或以包含含有V和Te的氧化物玻璃层和金属层的箔片或板的形式。

公开(公告)号：US20160071814A1

公开(公告)日：2016-03-10

申请号：US14477962

申请日：2014-09-05

Applicant: Infineon Technologies AG

Inventor： Friedrich Kroener

IPC: H01L23/00 ,  B23K35/32 ,  B23K35/30 ,  B23K1/00 ,  B23K35/02

CPC classification number: H01L24/29 ,  B23K1/0016 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/302 ,  B23K35/32 ,  B23K35/36 ,  B23K2101/40 ,  B23K2103/172 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05647 ,  H01L2224/05747 ,  H01L2224/05893 ,  H01L2224/06181 ,  H01L2224/271 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/27442 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29157 ,  H01L2224/29193 ,  H01L2224/29247 ,  H01L2224/29271 ,  H01L2224/29393 ,  H01L2224/29447 ,  H01L2224/29471 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32058 ,  H01L2224/32245 ,  H01L2224/831 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83447 ,  H01L2224/83693 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/00012

Abstract: A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

Abstract translation: 用于焊接半导体芯片布置的预成型件结构包括碳纤维复合片和形成在碳纤维复合片上的焊料层。

公开(公告)号：US20160059535A1

公开(公告)日：2016-03-03

申请号：US14839536

申请日：2015-08-28

Applicant: Materion Corporation

Inventor： Richard J. Koba ,  James Fraivillig

IPC: B32B37/14 ,  H01B1/22 ,  B29C65/00 ,  B32B7/12 ,  B32B37/16 ,  B29C65/02 ,  C09K5/14 ,  B32B7/02

CPC classification number: B32B37/144 ,  B29C65/02 ,  B29C66/45 ,  B29C66/712 ,  B29C66/73112 ,  B29C66/7392 ,  B29K2079/085 ,  B32B7/02 ,  B32B7/12 ,  B32B9/005 ,  B32B9/045 ,  B32B15/08 ,  B32B15/20 ,  B32B27/06 ,  B32B27/18 ,  B32B27/20 ,  B32B27/281 ,  B32B37/1284 ,  B32B2037/1253 ,  B32B2038/0076 ,  B32B2255/10 ,  B32B2255/20 ,  B32B2255/205 ,  B32B2262/103 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/108 ,  B32B2307/202 ,  B32B2307/302 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2379/08 ,  B32B2457/00 ,  B32B2457/08 ,  C08K3/04 ,  C08K3/08 ,  C08K2003/0806 ,  C08K2003/0831 ,  C08K2003/085 ,  C08K2201/001 ,  C09J7/22 ,  C09J7/28 ,  C09J7/29 ,  C09J7/35 ,  C09J9/02 ,  C09J2201/602 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2205/106 ,  C09J2400/163 ,  C09J2479/08 ,  C09J2479/086 ,  C09K5/14 ,  H01B1/22 ,  H01L21/50 ,  H01L23/10 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29193 ,  H01L2224/29247 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29363 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/83487 ,  H01L2224/83856 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H05K3/0061 ,  H05K2201/0129 ,  H05K2201/0154 ,  H05K2201/0215 ,  C08L79/08 ,  H01L2924/07025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01006 ,  H01L2924/07811 ,  H01L2924/013 ,  H01L2924/01074 ,  H01L2924/01042 ,  H01L2924/05432 ,  H01L2924/05032 ,  H01L2924/0532 ,  H01L2924/01004

Abstract: A bond film includes a thermoplastic polyimide adhesive that contains particles which are thermally conductive and electrically conductive particles. A conductive foil layer may be placed between two layers of adhesive to form the bond foil. This bond film has a low curing temperature which reduces CTE mismatch between different substrates and therefore allows direct bonding of substrates that have high coefficient of thermal expansion mismatch. The low curing temperature also allows for reduced processing costs. The conductive bond film does not degrade at high temperatures, allowing for service temperatures up to 350° C. and thermal excursions up to 450° C.

Abstract translation: 接合膜包括含有导热性和导电性粒子的粒子的热塑性聚酰亚胺粘合剂。 导电箔层可以放置在两层粘合剂之间以形成接合箔。 该粘合膜具有低的固化温度，这降低了不同基底之间的CTE失配，因此允许具有高热膨胀失配系数的基底的直接结合。 低固化温度也可以降低加工成本。 导电粘合膜在高温下不会降解，使用温度高达350℃，热偏移达450℃。

公开(公告)号：US20150021792A1

公开(公告)日：2015-01-22

申请号：US13944927

申请日：2013-07-18

Applicant: Infineon Technologies AG

Inventor： Irmgard Escher-Poeppel ,  Eduard KNAUER ,  Thomas KUNSTMANN ,  Peter SCHERL ,  Raimund FOERG

IPC: H01L23/00 ,  H01L23/373

CPC classification number: H01L24/29 ,  H01L23/3736 ,  H01L24/27 ,  H01L24/743 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/27332 ,  H01L2224/27848 ,  H01L2224/29247 ,  H01L2224/29647 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/83011 ,  H01L2224/83065 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/8384 ,  H01L2224/85547 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/01001 ,  H01L2924/20106 ,  H01L2924/00

Abstract: An embodiment method for fabricating electronic devices having two components connected by a metal layer includes applying a metal layer to each component and connecting the metal layers such that a single metal layer is formed.

Abstract translation: 用于制造具有通过金属层连接的两个部件的电子器件的实施例方法包括将金属层施加到每个部件并连接金属层，使得形成单个金属层。