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1.发明授权公开(公告)号：US10373839B2
公开(公告)日：2019-08-06
申请号：US14023577
申请日：2013-09-11
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener , Ingo Muri
IPC: H01L21/3063 , H01L21/67
Abstract: A wafer contacting device may include: a receiving region configured to receive a wafer; and an elastically deformable carrier disposed in the receiving region and including an electrically conductive surface region.
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公开(公告)号：US09683306B2
公开(公告)日：2017-06-20
申请号：US14467106
申请日：2014-08-25
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener , Ingo Muri
IPC: C25D15/00 , C25D5/02 , C25D5/18 , C25D5/34 , C25D17/00 , C25D5/10 , C25D3/12 , C25D3/38 , C25D3/46 , C25D3/48 , C25D21/10
CPC classification number: C25D15/00 , C25D3/12 , C25D3/38 , C25D3/46 , C25D3/48 , C25D5/02 , C25D5/022 , C25D5/10 , C25D5/18 , C25D5/34 , C25D17/00 , C25D17/001 , C25D21/10
Abstract: A method of forming a composite material is provided. The method may include: arranging a suspension in physical contact with a carrier, wherein the suspension may comprise an electrolyte and a plurality of particles of a first component of the composite material; causing the particles of the first component of the composite material to sediment on the carrier, wherein a plurality of spaces may be formed between the sedimented particles; and forming by electroplating a second component of the composite material from the electrolyte in at least a fraction of the plurality of spaces.
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3.发明申请WAFER CONTACTING DEVICE, AND ARRANGEMENT AND METHOD FOR ELECTROCHEMICAL ETCHING OF A WAFER 审中-公开波形接触装置，以及用于电子电化学蚀刻的布置和方法公开(公告)号：US20150068918A1
公开(公告)日：2015-03-12
申请号：US14023577
申请日：2013-09-11
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener , Ingo Muri
IPC: H01L21/3063 , H01L21/67
CPC classification number: H01L21/3063 , H01L21/67075 , H01L21/67086
Abstract: A wafer contacting device may include: a receiving region configured to receive a wafer; and an elastically deformable carrier disposed in the receiving region and including an electrically conductive surface region.
Abstract translation: 晶片接触装置可以包括：被配置为接收晶片的接收区域; 以及设置在所述接收区域中并且包括导电表面区域的可弹性变形的载体。
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4.发明申请公开(公告)号：US20180327924A1
公开(公告)日：2018-11-15
申请号：US15974753
申请日：2018-05-09
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener
CPC classification number: C25D5/18 , B22F1/025 , C22C47/062 , C22C47/08 , C25D5/12 , C25D5/14 , C25D5/50 , D06M11/83 , D06M2101/40 , Y10T428/12486
Abstract: A method for processing at least one carbon fiber according to an embodiment may include: electroplating a first metal layer over at least one carbon fiber, wherein the first metal layer includes a metal which can form a common phase with carbon, electroplating a second metal layer over the first metal layer, wherein the second metal layer includes a metal which can form a common phase with the metal of the first metal layer, and annealing the at least one carbon fiber, the first metal layer, and the second metal layer so that the metal of the first metal layer forms a common phase with the carbon of the at least one carbon fiber at an interface between the first metal layer and the at least one carbon fiber and the metal of the first metal layer forms a common phase with the metal of the second metal layer at an interface between the first metal layer and the second metal layer.
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公开(公告)号：US20150197869A1
公开(公告)日：2015-07-16
申请号：US14667767
申请日：2015-03-25
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener
CPC classification number: C25D5/022 , B82Y30/00 , C25D5/10 , C25D5/14 , C25D5/18 , C25D5/50 , C25D5/54 , C25D7/12 , D06M10/06 , D06M11/83 , D06M2101/40 , F28F3/02 , F28F21/00 , F28F21/02 , F28F21/085 , H01L21/4871 , H01L23/373 , H01L23/3733 , H01L24/83 , H01L2224/83801 , H01L2224/8384 , H01L2924/00 , H01L2924/0002 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/13055
Abstract: A method for fabricating a heat sink according to an embodiment may include: providing a carbon fiber fabric having a plurality of carbon fibers and a plurality of openings, the openings leading from a first side of the fabric to a second side of the carbon fiber fabric; and electroplating the carbon fiber fabric with metal, wherein metal is deposited with a higher rate at the first side than at the second side of the carbon fiber fabric. A method for fabricating a heat sink according to another embodiment may include: providing a carbon metal composite having a plurality of metal-coated carbon fibers and a plurality of openings, the openings leading from a first side of the carbon metal composite to a second side of the carbon metal composite; disposing the carbon metal composite over a semiconductor element such that the first side of the carbon metal composite faces the semiconductor element; and bonding the carbon metal composite to the semiconductor element by means of an electroplating process, wherein metal electrolyte is supplied to an interface between the carbon metal composite and the semiconductor element via the plurality of openings.
Abstract translation: 根据实施例的制造散热器的方法可以包括：提供具有多个碳纤维和多个开口的碳纤维织物，所述开口从所述织物的第一侧引导到所述碳纤维织物的第二侧 ; 并用金属电镀碳纤维织物，其中在碳纤维织物的第一侧以比第二侧更高的速率沉积金属。 根据另一实施例的制造散热器的方法可以包括：提供具有多个金属涂覆的碳纤维和多个开口的碳金属复合材料，所述开口从碳金属复合材料的第一侧引导到第二侧 的碳金属复合材料; 将所述碳金属复合材料设置在所述半导体元件上，使得所述碳金属复合材料的第一面面对所述半导体元件; 以及通过电镀工艺将碳金属复合材料结合到半导体元件上，其中通过多个开口将金属电解质供应到碳金属复合材料和半导体元件之间的界面。
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Patent Agency Ranking
6.发明授权Preform structure for soldering a semiconductor chip arrangement, a method for forming a preform structure for a semiconductor chip arrangement, and a method for soldering a semiconductor chip arrangement 有权用于焊接半导体芯片布置的预成型结构，用于形成用于半导体芯片布置的预成型结构的方法以及用于焊接半导体芯片布置的方法公开(公告)号：US09536851B2
公开(公告)日：2017-01-03
申请号：US14477962
申请日：2014-09-05
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener
CPC classification number: H01L24/29 , B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/0244 , B23K35/302 , B23K35/32 , B23K35/36 , B23K2101/40 , B23K2103/172 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/32 , H01L24/83 , H01L2224/03462 , H01L2224/04026 , H01L2224/05647 , H01L2224/05747 , H01L2224/05893 , H01L2224/06181 , H01L2224/271 , H01L2224/2711 , H01L2224/2712 , H01L2224/27442 , H01L2224/2746 , H01L2224/276 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29157 , H01L2224/29193 , H01L2224/29247 , H01L2224/29271 , H01L2224/29393 , H01L2224/29447 , H01L2224/29471 , H01L2224/32013 , H01L2224/32014 , H01L2224/32057 , H01L2224/32058 , H01L2224/32245 , H01L2224/831 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83447 , H01L2224/83693 , H01L2224/8382 , H01L2224/83825 , H01L2924/0105 , H01L2924/0132 , H01L2924/014 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/20644 , H01L2924/351 , H01L2924/00014 , H01L2924/01006 , H01L2924/00012
Abstract: A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.
Abstract translation: 用于焊接半导体芯片布置的预成型件结构包括碳纤维复合片和形成在碳纤维复合片上的焊料层。
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7.发明授权Sensor device, a method and a sensor to determine a relative concentration of a first kind of ions with respect to a second kind of ions solute in a drop of liquid 有权传感器装置，方法和传感器，用于确定第一种离子相对于第二种离子溶质在一滴液体中的相对浓度公开(公告)号：US09389200B2
公开(公告)日：2016-07-12
申请号：US13673392
申请日：2012-11-09
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener
IPC: G01N27/414 , G01N27/49 , G01N27/48
CPC classification number: G01N27/49 , G01N27/414 , G01N27/4145 , G01N27/48
Abstract: A sensor device according to an embodiment includes a semiconductor substrate including a plurality of channels, the channels connecting a cavity and a measurement electrode, and a counter electrode arranged to be in contact with the cavity, wherein the cavity, the measurement electrode and the counter electrode are arranged to accommodate a drop of a liquid and to allow a voltage to be applied to the drop of liquid.
Abstract translation: 根据实施例的传感器装置包括：包括多个通道的半导体衬底，连接空腔和测量电极的通道以及布置成与空腔接触的对电极，其中腔，测量电极和计数器 电极被布置成容纳一滴液体并且允许将电压施加到液滴。
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公开(公告)号：US09293330B2
公开(公告)日：2016-03-22
申请号：US14011832
申请日：2013-08-28
Applicant: Infineon Technologies AG
Inventor： Hans-Joachim Schulze , Ingo Muri , Friedrich Kroener , Werner Schustereder
IPC: H01L21/322 , H01L29/868 , H01L21/265 , H01L21/263 , H01L21/324 , H01L21/3063
CPC classification number: H01L21/26513 , H01L21/263 , H01L21/265 , H01L21/26506 , H01L21/3063 , H01L21/3242
Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.
Abstract translation: 公开了一种制造半导体的方法，该方法具有：提供具有第一面和第二面的半导体本体; 通过所述半导体本体中的所述第一侧至所述半导体本体的第一深度位置的第一注入而在所述半导体本体中形成n掺杂区; 以及通过所述半导体本体中的所述第二侧到所述半导体本体的第二深度位置的第二注入在所述半导体本体中形成p掺杂区，在所述n掺杂区和所述p掺杂区之间形成pn结 在半导体体内。
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9.发明申请ELECTRONIC COMPONENT, A SEMICONDUCTOR WAFER AND A METHOD FOR PRODUCING AN ELECTRONIC COMPONENT 有权电子元件，半导体波形和生产电子元件的方法公开(公告)号：US20140206163A1
公开(公告)日：2014-07-24
申请号：US14225652
申请日：2014-03-26
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener
IPC: H01L29/66
CPC classification number: H01L29/66712 , H01L24/32 , H01L24/33 , H01L29/0657 , H01L29/0873 , H01L29/0878 , H01L29/0886 , H01L29/41741 , H01L29/456 , H01L29/7395 , H01L29/7802 , H01L29/7809 , H01L2224/291 , H01L2224/32238 , H01L2924/01079 , H01L2924/13055 , H01L2924/13091 , H01L2924/014
Abstract: An electronic component includes a semiconductor substrate defined by a generally planar first face, a generally planar second face and side faces extending between the generally planar second face and the generally planar first face. The semiconductor substrate has a curved contour between the generally planar second face and the side faces.
Abstract translation: 电子部件包括由大致平面的第一面，大致平坦的第二面和在大致平坦的第二面和大致平面的第一面之间延伸的侧面限定的半导体基板。 半导体衬底在大致平坦的第二面和侧面之间具有弯曲的轮廓。
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10.发明申请SENSOR DEVICE, A METHOD AND A SENSOR TO DETERMINE A RELATIVE CONCENTRATION OF A FIRST KIND OF IONS WITH RESPECT TO A SECOND KIND OF IONS SOLUTE IN A DROP OF LIQUID 有权传感器装置，方法和传感器，用于确定第一类离子的相对浓度相对于液体中的第二种类型的溶液公开(公告)号：US20140131224A1
公开(公告)日：2014-05-15
申请号：US13673392
申请日：2012-11-09
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Friedrich Kroener
IPC: G01N27/414 , G01N27/49
CPC classification number: G01N27/49 , G01N27/414 , G01N27/4145 , G01N27/48
Abstract: A sensor device according to an embodiment includes a semiconductor substrate including a plurality of channels, the channels connecting a cavity and a measurement electrode, and a counter electrode arranged to be in contact with the cavity, wherein the cavity, the measurement electrode and the counter electrode are arranged to accommodate a drop of a liquid and to allow a voltage to be applied to the drop of liquid.
Abstract translation: 根据实施例的传感器装置包括：包括多个通道的半导体衬底，连接空腔和测量电极的通道以及布置成与空腔接触的对电极，其中腔，测量电极和计数器 电极被布置成容纳一滴液体并且允许将电压施加到液滴。
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