公开(公告)号：US11955446B2

公开(公告)日：2024-04-09

申请号：US17993235

申请日：2022-11-23

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Yu-Han Hsueh

IPC: H01L23/48 ,  H01L23/00

CPC classification number: H01L24/08 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/80 ,  H01L2224/03011 ,  H01L2224/05547 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/0569 ,  H01L2224/05693 ,  H01L2224/08145 ,  H01L2224/09505 ,  H01L2224/80948

Abstract: The present disclosure relates to a method for forming a semiconductor device structure. The method includes forming a first semiconductor die and forming a second semiconductor die. The first semiconductor die includes a first metal layer, a first conductive via over the first metal layer, and a first conductive polymer liner surrounding the first conductive via. The second semiconductor die includes a second metal layer, a second conductive via over the second metal layer, and a second conductive polymer liner surrounding the second conductive via. The method also includes forming a conductive structure electrically connecting the first metal layer and the second metal layer by bonding the second semiconductor die to the first semiconductor die. The conductive structure is formed by the first conductive via, the first conductive polymer liner, the second conductive via, and the second conductive polymer liner.

公开(公告)号：US20180108626A1

公开(公告)日：2018-04-19

申请号：US15642742

申请日：2017-07-06

Applicant: International Business Machines Corporation

Inventor： Ekta Misra ,  Krishna R. Tunga

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/0215 ,  H01L2224/02166 ,  H01L2224/02185 ,  H01L2224/0219 ,  H01L2224/03013 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05191 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05657 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05676 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05687 ,  H01L2224/05691 ,  H01L2224/05693 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/07025 ,  H01L2924/3511 ,  H01L2924/35121 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/0455 ,  H01L2924/01073 ,  H01L2924/04541 ,  H01L2924/0469 ,  H01L2924/0463 ,  H01L2924/01013 ,  H01L2924/0476 ,  H01L2924/01074 ,  H01L2924/0496 ,  H01L2924/0538 ,  H01L2924/01044 ,  H01L2924/0479 ,  H01L2924/01027 ,  H01L2924/048 ,  H01L2924/01028 ,  H01L2924/01006

Abstract: Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.

公开(公告)号：US20150132889A1

公开(公告)日：2015-05-14

申请号：US14548093

申请日：2014-11-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Ming-Da Cheng

IPC: H01L25/00 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05693 ,  H01L2224/11019 ,  H01L2224/1134 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/1184 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16503 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48693 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48793 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48893 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/81026 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/01029 ,  H01L2924/01006

Abstract: Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

Abstract translation: 实施例涉及包装封装（PoP）结构，包括柱状灯泡和形成PoP结构的方法。 根据实施例，结构包括第一基板，螺柱灯泡，模具，第二基板和电连接器。 螺柱灯泡耦合到第一基板的第一表面。 模具附接到第一基板的第一表面。 电连接器耦合到第二基板，并且相应的电连接器耦合到相应的螺柱灯泡。

公开(公告)号：US20180047709A1

公开(公告)日：2018-02-15

申请号：US15793325

申请日：2017-10-25

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Ming-Da Cheng

IPC: H01L25/065 ,  H01L23/498 ,  H01L25/00 ,  H01L23/00 ,  H01L25/10

CPC classification number: H01L25/0657 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05693 ,  H01L2224/11019 ,  H01L2224/1134 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/1184 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16503 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48693 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48793 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48893 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/81026 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/01029 ,  H01L2924/01006

Abstract: Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

公开(公告)号：US20170294395A1

公开(公告)日：2017-10-12

申请号：US15442263

申请日：2017-02-24

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akihiko HAPPOYA

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L24/29 ,  H01L23/49513 ,  H01L23/49582 ,  H01L23/49586 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/03 ,  H01L24/04 ,  H01L24/05 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0381 ,  H01L2224/03848 ,  H01L2224/04026 ,  H01L2224/05023 ,  H01L2224/051 ,  H01L2224/05562 ,  H01L2224/0569 ,  H01L2224/05693 ,  H01L2224/27436 ,  H01L2224/27438 ,  H01L2224/27848 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33505 ,  H01L2224/45099 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/83894 ,  H01L2224/83896 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device includes a base, a semiconductor chip on the base, a conductive bonding layer between a surface of the base and a surface of the semiconductor chip, the conductive bonding layer including a resin and a plurality of conductive particles contained in the resin, and a molecular bonding layer between the surface of the semiconductor chip and a surface of the conductive bonding layer, and including a molecular portion covalently bonded to a material of the semiconductor chip and a material of the conductive bonding layer.

公开(公告)号：US20160240504A1

公开(公告)日：2016-08-18

申请号：US14990355

申请日：2016-01-07

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Shoji SAKAGUCHI

IPC: H01L23/00 ,  H01L29/66

CPC classification number: H01L29/66333 ,  H01L21/67092 ,  H01L21/67132 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L29/41725 ,  H01L29/7395 ,  H01L2224/03009 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/04026 ,  H01L2224/05019 ,  H01L2224/05073 ,  H01L2224/05083 ,  H01L2224/05155 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/0569 ,  H01L2224/05693 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/83815 ,  H01L2924/10158 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/05166 ,  H01L2224/05124 ,  H01L2924/00012 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01074 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/01025

Abstract: A method for manufacturing a semiconductor device includes a first step of forming a first electrode on one main surface side of a semiconductor wafer; a second step of bonding a first film to another main surface side of the semiconductor wafer; a third step of bonding a second film to an outer peripheral portion of the semiconductor wafer by applying pressure to the second film on the semiconductor wafer using a plurality of cylindrical rollers, after the second step; and a fourth step of forming a plating layer on the first electrode on the one main surface side of the semiconductor wafer by a plating process, after the third step.

Abstract translation: 一种制造半导体器件的方法包括：在半导体晶片的一个主表面侧形成第一电极的第一步骤; 将第一膜接合到半导体晶片的另一个主表面侧的第二步骤; 第三步骤，在第二步骤之后，通过使用多个圆柱形辊对半导体晶片上的第二膜施加压力，将第二膜结合到半导体晶片的外周部分; 以及在第三步骤之后通过电镀工艺在半导体晶片的一个主表面侧的第一电极上形成镀层的第四步骤。

公开(公告)号：US08765531B2

公开(公告)日：2014-07-01

申请号：US13590218

申请日：2012-08-21

Applicant: Johann Gatterbauer ,  Bernhard Weidgans ,  Joerg Busch

Inventor： Johann Gatterbauer ,  Bernhard Weidgans ,  Joerg Busch

IPC: H01L21/00 ,  H01L23/48 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L24/05 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/498 ,  H01L24/02 ,  H01L24/03 ,  H01L24/19 ,  H01L24/20 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/02 ,  H01L2224/0212 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/0239 ,  H01L2224/03019 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0348 ,  H01L2224/0361 ,  H01L2224/0381 ,  H01L2224/0382 ,  H01L2224/03821 ,  H01L2224/03822 ,  H01L2224/03825 ,  H01L2224/03827 ,  H01L2224/03831 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05547 ,  H01L2224/05565 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05576 ,  H01L2224/05578 ,  H01L2224/056 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/0569 ,  H01L2224/05693 ,  H01L2224/12105 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48135 ,  H01L2224/48151 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/4869 ,  H01L2224/48693 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/48869 ,  H01L2224/4889 ,  H01L2224/48893 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/3651 ,  H01L2924/3656 ,  H01L2924/381 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2224/45147

Abstract: A method for manufacturing a metal pad structure of a die is provided, the method including: forming a metal pad between encapsulation material of the die, wherein the metal pad and the encapsulation material are separated from each other by a gap; and forming additional material in the gap to narrow at least a part of the gap.

Abstract translation: 提供了一种用于制造管芯的金属焊盘结构的方法，所述方法包括：在所述管芯的封装材料之间形成金属焊盘，其中所述金属焊盘和所述封装材料通过间隙彼此分离; 以及在所述间隙中形成附加材料以使所述间隙的至少一部分变窄。

公开(公告)号：US09698075B2

公开(公告)日：2017-07-04

申请号：US15210970

申请日：2016-07-15

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Marie Denison ,  Luigi Colombo ,  Hiep Nguyen ,  Darvin Edwards

IPC: H01L23/373 ,  H01L23/00 ,  H01L21/48 ,  H01L23/367

CPC classification number: H01L23/373 ,  H01L21/4871 ,  H01L21/4889 ,  H01L23/367 ,  H01L23/3675 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L2224/03416 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05078 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05193 ,  H01L2224/05558 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/05693 ,  H01L2224/08165 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2224/45099 ,  H01L2224/03

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

公开(公告)号：US20170025391A1

公开(公告)日：2017-01-26

申请号：US15288751

申请日：2016-10-07

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Ming-Da Cheng

IPC: H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05693 ,  H01L2224/11019 ,  H01L2224/1134 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/1184 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16503 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48693 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48793 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48893 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/81026 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/01029 ,  H01L2924/01006

Abstract: Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

Abstract translation: 实施例涉及包装封装（PoP）结构，包括柱状灯泡和形成PoP结构的方法。 根据实施例，结构包括第一基板，螺柱灯泡，模具，第二基板和电连接器。 螺柱灯泡耦合到第一基板的第一表面。 模具附接到第一基板的第一表面。 电连接器耦合到第二基板，并且相应的电连接器耦合到相应的螺柱灯泡。

公开(公告)号：US20160322277A1

公开(公告)日：2016-11-03

申请号：US15210970

申请日：2016-07-15

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Marie Denison ,  Luigi Colombo ,  Hiep Nguyen ,  Darvin Edwards

IPC: H01L23/373 ,  H01L23/00 ,  H01L21/48 ,  H01L23/367

CPC classification number: H01L23/373 ,  H01L21/4871 ,  H01L21/4889 ,  H01L23/367 ,  H01L23/3675 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L2224/03416 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05078 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05193 ,  H01L2224/05558 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/05693 ,  H01L2224/08165 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2224/45099 ,  H01L2224/03

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract translation: 微电子器件包括在半导体器件的前表面处具有部件的半导体器件和在半导体器件的背面上的背面散热器层。 背面散热器层为100纳米至3微米厚，面内热导率至少为150瓦特/米-2°K，电阻率小于100微欧姆厘米。