公开(公告)号：US09875982B2

公开(公告)日：2018-01-23

申请号：US15170494

申请日：2016-06-01

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ming-Fa Chen ,  Chen-Hua Yu ,  Ching-Pin Yuan ,  Sung-Feng Yeh

IPC分类号： H01L23/52 ,  H01L23/00 ,  H01L23/29 ,  H01L23/48 ,  H01L23/498

CPC分类号： H01L24/16 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/11318 ,  H01L2224/1183 ,  H01L2224/13101 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2924/01029 ,  H01L2924/3512

摘要： A semiconductor device includes a first die, a second die bonding to the first die thereby forming a bonding interface, and a pad of the first die and exposed from a polymeric layer of the first die. The semiconductor device further has a conductive material on the pad and extended from the pad in a direction parallel to a stacking direction of the first die and the second die. In the semiconductor device, the conductive material extended to a top surface, which is vertically higher than a backside of the second die, wherein the backside is a surface opposite to the bonding interface.

公开(公告)号：US09711438B2

公开(公告)日：2017-07-18

申请号：US14275213

申请日：2014-05-12

申请人： STATS ChipPAC, Ltd.

发明人： Li-Jen Lin ,  Stephen A. Murphy ,  Wei Sun

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L21/768

CPC分类号： H01L23/49811 ,  H01L21/76877 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/10126 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device has a substrate with a contact pad. A first insulation layer is formed over the substrate and contact pad. A first under bump metallization (UBM) is formed over the first insulating layer and is electrically connected to the contact pad. A second insulation layer is formed over the first UBM. A second UBM is formed over the second insulation layer after the second insulation layer is cured. The second UBM is electrically connected to the first UBM. The second insulation layer is between and separates portions of the first and second UBMs. A photoresist layer with an opening over the contact pad is formed over the second UBM. A conductive bump material is deposited within the opening in the photoresist layer. The photoresist layer is removed and the conductive bump material is reflowed to form a spherical bump.

公开(公告)号：US20170077052A1

公开(公告)日：2017-03-16

申请号：US14853807

申请日：2015-09-14

申请人： Micron Technology, Inc.

发明人： Giorgio Mariottini ,  Sameer Vadhavkar ,  Wayne Huang ,  Anilkumar Chandolu ,  Mark Bossler

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/02135 ,  H01L2224/0219 ,  H01L2224/03013 ,  H01L2224/0346 ,  H01L2224/03472 ,  H01L2224/0361 ,  H01L2224/03906 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05082 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05184 ,  H01L2224/05547 ,  H01L2224/05553 ,  H01L2224/05555 ,  H01L2224/05565 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/05687 ,  H01L2224/10145 ,  H01L2224/114 ,  H01L2224/11472 ,  H01L2224/13018 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/94 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/3651 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/053

摘要： The present technology is directed to manufacturing collars for under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects and associated systems. A semiconductor die includes a semiconductor material having solid-state components and an interconnect extending at least partially through the semiconductor material. An under-bump metal (UBM) structure is formed over the semiconductor material and is electrically coupled to corresponding interconnects. A collar surrounds at least a portion of the side surface of the UBM structure, and a solder material is disposed over the top surface of the UBM structure.

摘要翻译： 本技术涉及制造用于管芯到管芯和/或封装到封装互连及相关系统的凸块下金属（UBM）结构的套圈。 半导体管芯包括具有固态部件的半导体材料和至少部分延伸穿过半导体材料的互连。 在半导体材料之上形成凸块下金属（UBM）结构，并且电耦合到相应的互连。 套环围绕UBM结构的侧表面的至少一部分，并且焊料材料设置在UBM结构的顶表面上。

公开(公告)号：US20160005706A1

公开(公告)日：2016-01-07

申请号：US14850875

申请日：2015-09-10

申请人： SK hynix Inc.

发明人： Wan Choon PARK

IPC分类号： H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/48

CPC分类号： H01L24/14 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L25/065 ,  H01L25/0657 ,  H01L27/11898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02126 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/01074 ,  H01L2924/014

摘要： A semiconductor device includes a semiconductor layer having a first surface and a second surface, a through electrode penetrating the semiconductor layer and having a protruding portion that protrudes over the second surface of the semiconductor layer, a front-side bump disposed on the first surface of the semiconductor layer and electrically coupled to the through electrode, a passivation pattern including a first insulation pattern that surrounds a sidewall of the protruding portion of the through electrode and extends onto the second surface of the semiconductor layer and a second insulation pattern that covers the first insulation pattern and has an etch selectivity with respect to the first insulation pattern, and a back-side bump covering an end surface of the protruding portion of the through electrode and extending onto the passivation pattern.

公开(公告)号：US20150162305A1

公开(公告)日：2015-06-11

申请号：US14102047

申请日：2013-12-10

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Richard D. Moyers ,  Sudhama C. Shastri

IPC分类号： H01L23/00

CPC分类号： H01L24/94 ,  H01L21/3065 ,  H01L21/78 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/11019 ,  H01L2224/1191 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2224/13562 ,  H01L2224/13611 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2224/11

摘要： In one embodiment, a conductor bump is formed on an under bump conductor of a semiconductor device to extend a first distance away from a surface of the under bump conductor including forming a protective layer on an outer surface of the conductor bump wherein the plurality of semiconductor dies are subsequently singulated by etching through the semiconductor substrate with an etchant and wherein the protective layer protects the conductor bump from the etchant.

摘要翻译： 在一个实施例中，导体突起形成在半导体器件的凹凸导体上，以延伸离突起导体表面的第一距离，包括在导体凸块的外表面上形成保护层，其中多个半导体 随后通过用蚀刻剂蚀刻通过半导体衬底来划分晶粒，并且其中保护层保护导体凸块免受蚀刻剂的影响。

公开(公告)号：US20140319695A1

公开(公告)日：2014-10-30

申请号：US14223695

申请日：2014-03-24

申请人： STATS ChipPAC, Ltd.

发明人： Ming-Che Hsieh ,  Chien Chen Lee

IPC分类号： H01L23/00

CPC分类号： H01L24/13 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02126 ,  H01L2224/02145 ,  H01L2224/02235 ,  H01L2224/02255 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16237 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/35 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/0665

摘要： A semiconductor device has a substrate. A first conductive layer is formed over the substrate. A first insulating layer is formed over the substrate. A second insulating layer is formed over the first insulating layer. A second conductive layer is formed over the second insulating layer. The second insulating layer is formed to include a cylindrical shape. The second conductive layer is formed as an under bump metallization layer. A first opening is formed in the second insulating layer. A second opening is formed in the second insulating layer around the first opening in the second insulating layer. An opening is formed in the first insulating layer over the first conductive layer. An opening is formed in the second insulating layer over the first conductive layer with the opening of the first insulating layer being greater than the opening of the second insulating layer.

摘要翻译： 半导体器件具有基板。 第一导电层形成在衬底上。 在衬底上形成第一绝缘层。 在第一绝缘层上形成第二绝缘层。 在第二绝缘层上形成第二导电层。 第二绝缘层形成为包括圆筒形状。 第二导电层形成为凸块下金属化层。 在第二绝缘层中形成第一开口。 在第二绝缘层中的第二绝缘层中的第一开口周围形成有第二开口。 在第一导电层上的第一绝缘层中形成开口。 在所述第一导电层上的所述第二绝缘层中形成开口，所述第一绝缘层的开口大于所述第二绝缘层的开口。

公开(公告)号：US08872306B2

公开(公告)日：2014-10-28

申请号：US13797655

申请日：2013-03-12

申请人： Samsung Electronics Co., Ltd.

发明人： Jeonggi Jin ,  Jeong-woo Park ,  Ju-il Choi

IPC分类号： H01L23/525 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065 ,  H01L23/29

CPC分类号： H01L23/5256 ,  H01L23/293 ,  H01L23/3178 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/10126 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/05552 ,  H01L2924/00

摘要： Provided are electrical connection structures and methods of fabricating the same. The structures may include a substrate including a bonding pad region provided with a bonding pad and a fuse region provided with a fuse, an insulating layer provided on the substrate and including a bonding pad opening exposing the bonding pad and a fuse opening exposing the fuse region, a connection terminal provided in the bonding pad region and electrically connected to the bonding pad, and a protection layer provided on the insulating layer including a first protection layer provided within the bonding pad region and a second protection layer in the fuse opening.

摘要翻译： 提供电连接结构及其制造方法。 该结构可以包括：衬底，其包括具有接合焊盘的接合焊盘区域和设置有保险丝的熔断器区域，设置在衬底上的绝缘层，并且包括露出焊盘的焊盘开口和暴露熔丝区域的保险丝开口 设置在所述焊盘区域中并且电连接到所述焊盘的连接端子，以及设置在所述绝缘层上的保护层，所述保护层包括设置在所述焊盘区域内的第一保护层和所述熔丝开口中的第二保护层。

公开(公告)号：US08852961B2

公开(公告)日：2014-10-07

申请号：US13468588

申请日：2012-05-10

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L21/00 ,  H01L49/02 ,  H01L21/768 ,  H01L27/115 ,  H01L23/00

CPC分类号： H01L21/76832 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L24/05 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/75 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/05624 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/01029 ,  H01L2924/00

摘要： Ferroelectric capacitors (42) are formed over a semiconductor substrate (10), then, a barrier film (46) directly covering the ferroelectric capacitors (42) is formed. Thereafter, wirings (56a etc.) connected to the ferroelectric capacitors (42) are formed. Further, a barrier film (58) is formed at a position higher than the wirings (56a etc.). In forming the barrier film (46), a film stack is formed, the film stack including at least two kinds of diffusion preventive films (46a and 46b) having different components and preventing diffusion of hydrogen or water.

摘要翻译： 铁电电容器（42）形成在半导体衬底（10）上，然后形成直接覆盖铁电电容器（42）的阻挡膜（46）。 之后，形成与强电介质电容器（42）连接的配线（56a等）。 此外，在高于布线（56a等）的位置处形成阻挡膜（58）。 在形成阻挡膜（46）时，形成膜堆叠，膜叠层包括至少两种具有不同成分的防扩散膜（46a和46b），并防止氢或水的扩散。

公开(公告)号：US20140284790A1

公开(公告)日：2014-09-25

申请号：US14210375

申请日：2014-03-13

申请人： Renesas Electronics Corporation

发明人： Masahiro Matsumoto ,  Kazuyoshi Maekawa ,  Masahiko Fujisawa

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  C22C21/12 ,  H01L22/32 ,  H01L24/03 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/0346 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0392 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/29339 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/01322 ,  H01L2924/1306 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/20305 ,  H01L2924/01029 ,  H01L2924/01015 ,  H01L2924/013 ,  H01L2924/00013

摘要： A semiconductor device in which reliability of a bonding pad to which a conductive wire is bonded is achieved. A bonding pad having an OPM structure is formed of an Al—Cu alloy film having a Cu concentration of 2 wt % or more. By increasing the Cu concentration, the Al—Cu alloy film forming the bonding pad is hardened. Therefore, the bonding pad is difficult to be deformed by impact in bonding of a Cu wire, and deformation of an OPM film as following the deformation of the bonding pad can be reduced. In this manner, concentration of a stress on the OPM film caused by the impact from the Cu wire can be reduced, and therefore, the breakage of the OPM film can be prevented.

摘要翻译： 实现了其中结合有导线的接合焊盘的可靠性的半导体器件。 具有OPM结构的焊盘由Cu浓度为2重量％以上的Al-Cu合金膜形成。 通过提高Cu浓度，形成接合焊盘的Al-Cu合金膜变硬。 因此，通过在Cu线的接合中的冲击，接合焊盘难以变形，并且能够降低接合焊盘变形后的OPM膜的变形。 以这种方式，可以减少由Cu丝的冲击引起的对OPM膜的应力集中，因此可以防止OPM膜的破损。

公开(公告)号：US08736062B2

公开(公告)日：2014-05-27

申请号：US13587816

申请日：2012-08-16

申请人： Johann Gatterbauer

发明人： Johann Gatterbauer

IPC分类号： H01L23/40 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L24/05 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05147 ,  H01L2224/05562 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/73204 ,  H01L2224/8592 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012

摘要： A method of making contact pad sidewall spacer and pad sidewall spacers are disclosed. An embodiment includes forming a plurality of contact pads on a substrate, each contact pad having sidewalls, forming a first photoresist over the substrate, and removing the first photoresist from the substrate thereby forming sidewall spacers along the sidewalls of the plurality of the contact pads.

摘要翻译： 公开了制造接触垫侧壁间隔件和衬垫侧壁间隔件的方法。 一个实施例包括在衬底上形成多个接触焊盘，每个接触焊盘具有侧壁，在衬底上形成第一光致抗蚀剂，以及从衬底去除第一光致抗蚀剂，从而沿着多个接触焊盘的侧壁形成侧壁间隔物。