公开(公告)号：US11495580B2

公开(公告)日：2022-11-08

申请号：US16183913

申请日：2018-11-08

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Marie Denison ,  Richard Saye ,  Takahiko Kudoh ,  Satyendra Singh Chauhan

IPC分类号： H01L25/07 ,  H01L23/495 ,  H01L23/31

摘要： A Multi-Chip Module (MCM) package includes a substrate having a plurality of metal terminals and at least a first die attach area. An encapsulant is around the substrate including on at least a portion of the topside and at least a portion of the bottomside of the package. At least a first device including at least two device terminals is attached face up on the first die attach area. At least a second device including at least two device terminals is flip-chip attached and stacked on the first device. At least one of the first device and second device include a transistor. At least one metal clip is between the first device and second device including a plurality of clip portions isolated from one another connecting at least one device terminal of each of the first device and second device to respective metal terminals of the plurality of metal terminals.

公开(公告)号：US11152459B2

公开(公告)日：2021-10-19

申请号：US16735729

申请日：2020-01-07

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Marie Denison ,  Philip L. Hower ,  Sameer Pendharkar

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/10 ,  H01L21/324 ,  H01L21/225 ,  H01L21/761 ,  A61B90/70 ,  H01L29/40 ,  H01L21/266 ,  H01L29/423 ,  A61J17/00

摘要： An integrated circuit containing an extended drain MOS transistor which has a drift layer, an upper RESURF layer over and contacting an upper surface of the drift layer, and a buried drain extension below the drift layer which is electrically connected to the drift layer at the drain end and separated from the drift layer at the channel end. A lower RESURF layer may be formed between the drift layer and the buried drain extension at the channel end. Any of the upper RESURF layer, the drift layer, the lower RESURF layer and the buried drain extension may have a graded doping density from the drain end to the channel end. A process of forming an integrated circuit containing an extended drain MOS transistor which has the drift layer, the upper RESURF layer, and the buried drain extension.

公开(公告)号：US10535731B2

公开(公告)日：2020-01-14

申请号：US15955122

申请日：2018-04-17

申请人： Texas Instruments Incorporated

发明人： Marie Denison ,  Philip L. Hower ,  Sameer Pendharkar

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/10 ,  H01L21/324 ,  H01L21/225 ,  H01L21/761 ,  H01L29/40 ,  H01L21/266 ,  H01L29/423

摘要： An integrated circuit containing an extended drain MOS transistor which has a drift layer, an upper RESURF layer over and contacting an upper surface of the drift layer, and a buried drain extension below the drift layer which is electrically connected to the drift layer at the drain end and separated from the drift layer at the channel end. A lower RESURF layer may be formed between the drift layer and the buried drain extension at the channel end. Any of the upper RESURF layer, the drift layer, the lower RESURF layer and the buried drain extension may have a graded doping density from the drain end to the channel end. A process of forming an integrated circuit containing an extended drain MOS transistor which has the drift layer, the upper RESURF layer, and the buried drain extension.

公开(公告)号：US09496198B2

公开(公告)日：2016-11-15

申请号：US14499222

申请日：2014-09-28

申请人： Texas Instruments Incorporated

发明人： Archana Venugopal ,  Marie Denison ,  Luigi Colombo ,  Hiep Nguyen ,  Darvin Edwards

IPC分类号： H01L23/373 ,  H01L21/48 ,  H01L23/498 ,  H01L23/00 ,  H01L23/367

CPC分类号： H01L23/373 ,  H01L21/4871 ,  H01L21/4889 ,  H01L23/367 ,  H01L23/3675 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L2224/03416 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05078 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05193 ,  H01L2224/05558 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/05693 ,  H01L2224/08165 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2224/45099 ,  H01L2224/03

摘要： A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

摘要翻译： 微电子器件包括在半导体器件的前表面处具有部件的半导体器件和在半导体器件的背面上的背面散热器层。 背面散热器层为100纳米至3微米厚，面内热导率至少为150瓦特/米-2°K，电阻率小于100微欧姆厘米。

公开(公告)号：US09373571B2

公开(公告)日：2016-06-21

申请号：US14938387

申请日：2015-11-11

申请人： Texas Instruments Incorporated

发明人： Marie Denison ,  Brian Ashley Carpenter ,  Osvaldo Jorge Lopez ,  Juan Alejandro Herbsommer ,  Jonathan Noquil

IPC分类号： H01L25/18 ,  H01L23/495 ,  H01L23/00 ,  H01L21/50 ,  H01L25/065 ,  H01L25/07 ,  H01L25/16 ,  H01L25/00 ,  H01L21/56 ,  H01L23/498

CPC分类号： H01L23/49575 ,  H01L21/50 ,  H01L21/561 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49838 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/38 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/84 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/072 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/29101 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40145 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2924/014 ,  H01L2924/20752

摘要： An electronic multi-output device has a substrate including a first pad, a second pad and a plurality of pins. A first chip with a first transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The first chip with its first terminal is tied to the first pad. A second chip with a second transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The second chip with its first terminal is tied to the second pad. The second terminals are connected by a discrete first metal clip and a second metal clip to respective substrate pins. A composite third chip has a third and a fourth transistor integrated so that the first terminals of the transistors are on one chip surface. The second terminals are merged into a common terminal. The patterned third terminals are on the opposite chip surface. The first terminals are vertically attached to the first and second metal clips, respectively. The common terminal is connected by a common clip to a substrate pin.

摘要翻译： 电子多输出装置具有包括第一垫，第二垫和多个销的基板。 具有第一晶体管的第一芯片在一个芯片表面上具有第一端子，在相对的芯片表面上具有第二和第三端子。 第一个芯片与第一个终端绑在第一个焊盘上。 具有第二晶体管的第二芯片在一个芯片表面上具有第一端子，在相对的芯片表面上具有第二和第三端子。 具有第一个终端的第二个芯片与第二个焊盘相连。 第二端子通过离散的第一金属夹和第二金属夹连接到相应的衬底引脚。 复合第三芯片具有集成的晶体管的第一端子在一个芯片表面上的第三和第四晶体管。 第二个终端被合并成一个公共终端。 图案化的第三端子在相对的芯片表面上。 第一端子分别垂直地附接到第一和第二金属夹。 公共端子通过公共夹子连接到基板引脚。

公开(公告)号：US09240465B2

公开(公告)日：2016-01-19

申请号：US14821085

申请日：2015-08-07

申请人： Texas Instruments Incorporated

发明人： Marie Denison ,  Sameer Pendharkar ,  Guru Mathur

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L21/265 ,  H01L21/324 ,  H01L21/225 ,  H01L29/78 ,  H01L29/417

CPC分类号： H01L29/66712 ,  H01L21/225 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/42368 ,  H01L29/66674 ,  H01L29/66734 ,  H01L29/7801 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor device has a vertical drain extended MOS transistor with deep trench structures to define a vertical drift region and at least one vertical drain contact region, separated from the vertical drift region by at least one instance of the deep trench structures. Dopants are implanted into the vertical drain contact regions and the semiconductor device is annealed so that the implanted dopants diffuse proximate to a bottom of the deep trench structures. The vertical drain contact regions make electrical contact to the proximate vertical drift region at the bottom of the intervening deep trench structure. At least one gate, body region and source region are formed above the drift region at, or proximate to, a top surface of a substrate of the semiconductor device. The deep trench structures are spaced so as to form RESURF regions for the drift region.

公开(公告)号：US09202692B2

公开(公告)日：2015-12-01

申请号：US14572936

申请日：2014-12-17

申请人： Texas Instruments Incorporated

发明人： Philip Leland Hower ,  Sameer Pendharkar ,  Marie Denison

IPC分类号： H01L29/66 ,  H01L21/225 ,  H01L27/098 ,  H01L21/8232 ,  H01L29/06 ,  H01L21/266

CPC分类号： H01L29/808 ,  H01L21/2253 ,  H01L21/266 ,  H01L21/32 ,  H01L21/8232 ,  H01L27/098 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/0843 ,  H01L29/1058 ,  H01L29/36 ,  H01L29/66901

摘要： An integrated circuit and method having a JFET with a buried drift layer and a buried channel in which the buried channel is formed by implanting through segmented implant areas so that the doping density of the buried channel is between 25 percent and 50 percent of the doping density of the buried drift layer.

摘要翻译： 一种集成电路和方法，其具有具有埋入漂移层的JFET和掩埋沟道，其中通过分段注入区域注入形成掩埋沟道，使得掩埋沟道的掺杂密度在掺杂密度的25％至50％之间 的埋层漂移层。

公开(公告)号：US09136368B2

公开(公告)日：2015-09-15

申请号：US14044909

申请日：2013-10-03

申请人： Texas Instruments Incorporated

发明人： Marie Denison ,  Sameer Pendharkar ,  Guru Mathur

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/66712 ,  H01L21/225 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/42368 ,  H01L29/66674 ,  H01L29/66734 ,  H01L29/7801 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor device has a vertical drain extended MOS transistor with deep trench structures to define a vertical drift region and at least one vertical drain contact region, separated from the vertical drift region by at least one instance of the deep trench structures. Dopants are implanted into the vertical drain contact regions and the semiconductor device is annealed so that the implanted dopants diffuse proximate to a bottom of the deep trench structures. The vertical drain contact regions make electrical contact to the proximate vertical drift region at the bottom of the intervening deep trench structure. At least one gate, body region and source region are formed above the drift region at, or proximate to, a top surface of a substrate of the semiconductor device. The deep trench structures are spaced so as to form RESURF regions for the drift region.

摘要翻译： 半导体器件具有深沟槽结构的垂直漏极扩展MOS晶体管，以限定垂直漂移区域和至少一个垂直漏极接触区域，其通过深沟槽结构的至少一个实例与垂直漂移区域分离。 将掺杂剂注入到垂直漏极接触区域中，并且半导体器件被退火，使得注入的掺杂剂在深沟槽结构的底部附近扩散。 垂直漏极接触区域在中间深沟槽结构的底部处与邻近的垂直漂移区域电接触。 至少一个栅极，主体区域和源极区域形成在半导体器件的衬底的顶表面处或附近的漂移区域上方。 深沟槽结构被间隔开以形成漂移区域的RESURF区域。

公开(公告)号：US20190088628A1

公开(公告)日：2019-03-21

申请号：US16183913

申请日：2018-11-08

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Marie Denison ,  Richard Saye ,  Takahiko Kudoh ,  Satyendra Singh Chauhan

IPC分类号： H01L25/07 ,  H01L23/495 ,  H01L23/31

摘要： A Multi-Chip Module (MCM) package includes a substrate having a plurality of metal terminals and at least a first die attach area. An encapsulant is around the substrate including on at least a portion of the topside and at least a portion of the bottomside of the package. At least a first device including at least two device terminals is attached face up on the first die attach area. At least a second device including at least two device terminals is flip-chip attached and stacked on the first device. At least one of the first device and second device include a transistor. At least one metal clip is between the first device and second device including a plurality of clip portions isolated from one another connecting at least one device terminal of each of the first device and second device to respective metal terminals of the plurality of metal terminals.

公开(公告)号：US09831320B2

公开(公告)日：2017-11-28

申请号：US15013412

申请日：2016-02-02

申请人： Texas Instruments Incorporated

发明人： Philip Leland Hower ,  Sameer Pendharkar ,  Marie Denison

IPC分类号： H01L29/66 ,  H01L21/336 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L21/266 ,  H01L27/088 ,  H01L21/225

CPC分类号： H01L29/66681 ,  H01L21/2253 ,  H01L21/266 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0642 ,  H01L29/0646 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

摘要： An integrated circuit and method having an extended drain MOS transistor with a buried drift region, a drain diffused link, a channel diffused link, and an isolation link which electrically isolated the source, where the isolation diffused link is formed by implanting through segmented areas to dilute the doping to less than two-thirds the doping in the drain diffused link.