公开(公告)号：US11756911B2

公开(公告)日：2023-09-12

申请号：US16438578

申请日：2019-06-12

Applicant: International Business Machines Corporation

Inventor： Krishna Tunga ,  Ekta Misra

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/05 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05012 ,  H01L2224/05015 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/0557 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/10126 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13014 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/13186 ,  H01L2224/81815 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2224/05144 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13166 ,  H01L2924/00014 ,  H01L2224/05686 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2224/13186 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13124 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13113 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13139 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13116 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/056 ,  H01L2924/013 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/013 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/013 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/00014 ,  H01L2224/056 ,  H01L2924/013 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/01013 ,  H01L2924/00014

Abstract: The present invention provides a structure. In an exemplary embodiment, the structure includes a base material, at least one metal pad, where a first surface of the metal pad is in contact with the base material, and a metal pedestal, where the metal pedestal is in contact with the metal pad, where a radial alignment of the metal pad is shifted by an offset distance, with respect to the metal pedestal, such that the metal pad is shifted towards a center axis of the base material, where a first dimension of the metal pad is smaller than a second dimension of the metal pad, where the second dimension is orthogonal to a line running from a center of the metal pad to the center axis of the base material, where the first dimension is parallel to the line.

公开(公告)号：US20190006304A1

公开(公告)日：2019-01-03

申请号：US16010712

申请日：2018-06-18

Applicant: International Business Machines Corporation

Inventor： Krishna Tunga ,  Ekta Misra

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/05 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/05015 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/10126 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13014 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/13186 ,  H01L2224/81815 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01014

Abstract: The present invention provides a structure. In an exemplary embodiment, the structure includes a base material, at least one metal pad, where a first surface of the metal pad is in contact with the base material, and a metal pedestal, where the metal pedestal is in contact with the metal pad, where a radial alignment of the metal pad is shifted by an offset distance, with respect to the metal pedestal, such that the metal pad is shifted towards a center axis of the base material, where a first dimension of the metal pad is smaller than a second dimension of the metal pad, where the second dimension is orthogonal to a line running from a center of the metal pad to the center axis of the base material, where the first dimension is parallel to the line.

公开(公告)号：US09431359B2

公开(公告)日：2016-08-30

申请号：US13962194

申请日：2013-08-08

Applicant: International Business Machines Corporation

Inventor： Brian M. Erwin ,  Ian Melville ,  Ekta Misra ,  George J. Scott

IPC: H01L23/48 ,  H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03616 ,  H01L2224/03848 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05187 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13111 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01083 ,  H01L2224/11912 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/00

Abstract: A solder bump support structure and method of manufacturing thereof is provided. The solder bump support structure includes an inter-level dielectric (ILD) layer formed over a silicon substrate. The ILD layer has a plurality of conductive vias. The structure further includes a first insulation layer formed on the ILD layer. The solder bump support structure further includes a pedestal member formed on the ILD layer which includes a conductive material formed above the plurality of conductive vias in the ILD layer coaxially surrounded by a second insulation layer. The second insulation layer is thicker than the first insulation layer. The structure further includes a capping under bump metal (UBM) layer formed over, and in electrical contact with, the conductive material and formed over at least a portion of the second insulation layer of the pedestal member.

公开(公告)号：US20150311161A1

公开(公告)日：2015-10-29

申请号：US14263423

申请日：2014-04-28

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Harry D. Cox ,  Brian M. Erwin ,  John J. Garant ,  Ekta Misra ,  Nicholas A. Polomoff ,  Jennifer D. Schuler

IPC: H01L23/532 ,  H01L21/321 ,  H01L21/288 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C25D3/38 ,  C25D5/02 ,  C25D5/022 ,  C25D5/48 ,  C25D7/123 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53233 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming a stack of layers on top of a dielectric layer and within an opening in the dielectric layer, the stack of layers comprising a first layer, a second layer, a third layer, and a fourth layer, each formed successively one on top of another, removing a first portion of the fourth layer outside the opening to expose a portion of the third layer, a second portion of the fourth layer remains within the opening, filling the opening with a metal by applying an electrical potential to the second layer during an electroplating technique in which the metal plates out on the fourth layer but does not plate out on the third layer, and removing portions of the first layer, the second layer, and the third layer to expose an upper surface of the dielectric layer between the opening and an adjacent opening.

Abstract translation: 一种方法，包括在电介质层的顶部和电介质层的开口内形成层叠层，所述层叠层包括第一层，第二层，第三层和第四层， 另一个顶部，除去开口外部的第四层的第一部分以暴露第三层的一部分，第四层的第二部分保留在开口内，通过向第二层施加电势而用金属填充开口 在电镀技术中，金属板在第四层上排出但不在第三层上沉积，并且去除第一层，第二层和第三层的部分以暴露介电层的上表面 在开口和相邻开口之间。

公开(公告)号：US10593639B2

公开(公告)日：2020-03-17

申请号：US16390193

申请日：2019-04-22

Applicant: International Business Machines Corporation

Inventor： Krishna Tunga ,  Ekta Misra

IPC: H01L23/00

Abstract: The present invention provides a structure. In an exemplary embodiment, the structure includes a base material, at least one metal pad, where a first surface of the metal pad is in contact with the base material, and a metal pedestal, where the metal pedestal is in contact with the metal pad, where a radial alignment of the metal pad is shifted by an offset distance, with respect to the metal pedestal, such that the metal pad is shifted towards a center axis of the base material, where a first dimension of the metal pad is smaller than a second dimension of the metal pad, where the second dimension is orthogonal to a line running from a center of the metal pad to the center axis of the base material, where the first dimension is parallel to the line.

公开(公告)号：US20190295978A1

公开(公告)日：2019-09-26

申请号：US16438578

申请日：2019-06-12

Applicant: International Business Machines Corporation

Inventor： Krishna Tunga ,  Ekta Misra

IPC: H01L23/00

Abstract: The present invention provides a structure. In an exemplary embodiment, the structure includes a base material, at least one metal pad, where a first surface of the metal pad is in contact with the base material, and a metal pedestal, where the metal pedestal is in contact with the metal pad, where a radial alignment of the metal pad is shifted by an offset distance, with respect to the metal pedestal, such that the metal pad is shifted towards a center axis of the base material, where a first dimension of the metal pad is smaller than a second dimension of the metal pad, where the second dimension is orthogonal to a line running from a center of the metal pad to the center axis of the base material, where the first dimension is parallel to the line.

公开(公告)号：US10373925B2

公开(公告)日：2019-08-06

申请号：US16010712

申请日：2018-06-18

Applicant: International Business Machines Corporation

Inventor： Krishna Tunga ,  Ekta Misra

IPC: H01L23/00

Abstract: The present invention provides a structure. In an exemplary embodiment, the structure includes a base material, at least one metal pad, where a first surface of the metal pad is in contact with the base material, and a metal pedestal, where the metal pedestal is in contact with the metal pad, where a radial alignment of the metal pad is shifted by an offset distance, with respect to the metal pedestal, such that the metal pad is shifted towards a center axis of the base material, where a first dimension of the metal pad is smaller than a second dimension of the metal pad, where the second dimension is orthogonal to a line running from a center of the metal pad to the center axis of the base material, where the first dimension is parallel to the line.

公开(公告)号：US09754905B1

公开(公告)日：2017-09-05

申请号：US15292433

申请日：2016-10-13

Applicant: International Business Machines Corporation

Inventor： Ekta Misra ,  Krishna R. Tunga

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/0215 ,  H01L2224/02166 ,  H01L2224/02185 ,  H01L2224/0219 ,  H01L2224/03013 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05191 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05657 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05676 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05687 ,  H01L2224/05691 ,  H01L2224/05693 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/07025 ,  H01L2924/3511 ,  H01L2924/35121 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/0455 ,  H01L2924/01073 ,  H01L2924/04541 ,  H01L2924/0469 ,  H01L2924/0463 ,  H01L2924/01013 ,  H01L2924/0476 ,  H01L2924/01074 ,  H01L2924/0496 ,  H01L2924/0538 ,  H01L2924/01044 ,  H01L2924/0479 ,  H01L2924/01027 ,  H01L2924/048 ,  H01L2924/01028 ,  H01L2924/01006

Abstract: Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.

公开(公告)号：US20150348910A1

公开(公告)日：2015-12-03

申请号：US14822928

申请日：2015-08-11

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Harry D. Cox ,  Brian M. Erwin ,  John J. Garant ,  Ekta Misra ,  Nicholas A. Polomoff ,  Jennifer D. Schuler

IPC: H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53238 ,  C25D3/38 ,  C25D5/02 ,  C25D5/022 ,  C25D5/48 ,  C25D7/123 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53233 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure including a stack of conformal layers on top of a dielectric layer and within an opening in the dielectric layer, the stack of layers including a first layer, a second layer, a third layer, and a fourth layer, each formed successively one on top of another with the first layer being in direct contact with the dielectric layer, and a conductive feature located directly on top of the fourth layer within the opening.

Abstract translation: 一种结构，其包括在电介质层的顶部和电介质层的开口内的共形层叠层，所述叠层包括第一层，第二层，第三层和第四层， 第一层与电介质层直接接触的另一层的顶部，以及直接位于开口内第四层顶部的导电特征。

公开(公告)号：US20150097283A1

公开(公告)日：2015-04-09

申请号：US14048483

申请日：2013-10-08

Applicant: International Business Machines Corporation

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Ekta Misra ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L21/7684 ,  H01L21/76877 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/03009 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03602 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/94 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/014

Abstract: Solder bump connections and methods for fabricating solder bump connections. A passivation layer is formed on a dielectric layer. Via openings extend through the passivation layer from a top surface of the passivation layer to a metal line in the passivation layer. A conductive layer is formed on the top surface of the passivation layer and within each via opening. When the passivation layer and the conductive layer are planarized, a plug is formed that includes sections in the via openings. Each section is coupled with the metal line.

Abstract translation: 焊接凸块连接和制造焊料凸点连接的方法。 在电介质层上形成钝化层。 通孔从钝化层的顶表面延伸穿过钝化层到钝化层中的金属线。 导电层形成在钝化层的顶表面上并在每个通孔开口内。 当钝化层和导电层平坦化时，形成包括通孔开口中的部分的插塞。 每个部分与金属线连接。