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84 条记录 (耗时 0.028 秒)

    Non-porous copper to copper interconnect
    2.
    发明授权
    Non-porous copper to copper interconnect 有权

    公开(公告)号：US10553555B2

    公开(公告)日：2020-02-04

    申请号：US15686645

    申请日：2017-08-25

    申请人： International Business Machines Corporation

    发明人： Charles L. Arvin ,  Christopher D. Muzzy

    IPC分类号： H01L21/30 ,  H01L23/00 ,  H01L23/498

    摘要： A semiconductor structure which includes a first semiconductor substrate having a first plurality of copper connectors; a second semiconductor substrate having a second plurality of copper connectors; and a joining structure joining the first plurality of copper connectors to the second plurality of copper connectors, the joining structure including a copper intermetallic mesh having pores filled with silver. There is also a method for joining two semiconductor substrates.

    Dice before grind with backside metal
    9.
    发明授权
    Dice before grind with backside metal 有权
    研磨前的骰子与背面金属

    公开(公告)号：US09165831B2

    公开(公告)日：2015-10-20

    申请号：US13928676

    申请日：2013-06-27

    申请人： International Business Machines Corporation

    发明人： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Charles F. Musante ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

    IPC分类号： H01L21/78 ,  H01L21/283

    CPC分类号： H01L21/78 ,  H01L21/283

    摘要： A method including forming a plurality of dicing channels in a front side of a wafer; the plurality of dicing channels including a depth at least greater than a desired final thickness of the wafer, filling the plurality of dicing channels with a fill material and removing a portion of the wafer from a back side of the wafer until the desired final thickness is achieved, where a portion of the fill material within the plurality of dicing channel is exposed. The method further including depositing a metal layer on the back side of the wafer; removing the fill material from within the plurality of dicing channels to expose the metal layer at a bottom of the plurality of dicing channels, and removing a portion of the metal layer located at the bottom of the plurality of dicing channels.

    摘要翻译： 一种包括在晶片的前侧形成多个切割通道的方法; 多个切割通道包括至少大于晶片的期望最终厚度的深度，用填充材料填充多个切割通道，并从晶片的背面去除晶片的一部分，直到期望的最终厚度为 其中多个切割通道内的填充材料的一部分被暴露。 该方法还包括在晶片的背面沉积金属层; 从所述多个切割通道内移除所述填充材料以暴露所述多个切割通道的底部处的所述金属层，以及去除位于所述多个切割通道的底部的所述金属层的一部分。