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公开(公告)号：US09105533B2
公开(公告)日：2015-08-11
申请号：US14507189
申请日：2014-10-06
发明人： Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen , Yen-Liang Lin
CPC分类号： H01L24/16 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/81 , H01L25/50 , H01L2224/0401 , H01L2224/05552 , H01L2224/05572 , H01L2224/05599 , H01L2224/10145 , H01L2224/11849 , H01L2224/13011 , H01L2224/13012 , H01L2224/13015 , H01L2224/13018 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/14051 , H01L2224/1412 , H01L2224/14152 , H01L2224/14153 , H01L2224/16238 , H01L2224/81191 , H01L2224/81345 , H01L2224/81815 , H01L2924/00014 , H01L2924/01322 , H01L2924/2064 , Y10T428/12493 , Y10T428/24479 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要： A bump structure includes a first end, and a second end opposite the first end. The bump structure further includes a first side connected between the first end and the second end. The bump structure further includes a second side opposite the first side. The second side is connected between the first end and the second end, and the second side comprises a recess for a reflowed solder material to fill.
摘要翻译： 凸块结构包括第一端和与第一端相对的第二端。 凸起结构还包括连接在第一端和第二端之间的第一侧。 凸起结构还包括与第一侧相对的第二侧。 第二侧连接在第一端和第二端之间，第二侧包括用于填充回流焊料的凹部。
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42.发明授权公开(公告)号：US09087819B2
公开(公告)日：2015-07-21
申请号：US13334515
申请日：2011-12-22
申请人： Gyujei Lee , Kang Won Lee
发明人： Gyujei Lee , Kang Won Lee
IPC分类号： H01L23/48 , H01L23/538 , H01L25/065 , H01L23/00 , H01L23/52 , H01L23/29 , H01L23/31
CPC分类号： H01L23/481 , H01L23/293 , H01L23/3128 , H01L23/3171 , H01L23/52 , H01L23/538 , H01L23/5384 , H01L23/5386 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L2224/02377 , H01L2224/0401 , H01L2224/13009 , H01L2224/13014 , H01L2224/13018 , H01L2224/13022 , H01L2224/13024 , H01L2224/13025 , H01L2224/131 , H01L2224/13147 , H01L2224/13184 , H01L2224/14181 , H01L2224/16146 , H01L2224/16237 , H01L2224/29099 , H01L2224/73204 , H01L2225/06513 , H01L2225/06544 , H01L2924/00012 , H01L2924/00014 , H01L2924/014
摘要： A semiconductor package includes a semiconductor chip having a first surface, a second surface which faces away from the first surface, and through holes which pass through the first surface and the second surface; a dielectric layer formed on one or more of the first surface and the second surface and formed with grooves around the through holes on a fourth surface of the dielectric layer facing away from a third surface of the dielectric layer which is attached to the semiconductor chip; through-silicon vias filling the through holes; and bumps formed on the through-silicon vias and on portions of the dielectric layer around the through-silicon vias and filling the grooves.
摘要翻译： 半导体封装包括具有第一表面，远离第一表面的第二表面和穿过第一表面和第二表面的通孔的半导体芯片; 电介质层，其形成在所述第一表面和所述第二表面的一个或多个上，并且在所述电介质层的第四表面上的所述通孔周围形成有与所述电介质层的附接到所述半导体芯片的第三表面相背离的沟槽; 通孔通孔填充通孔; 以及形成在穿硅通孔上的电介质层的部分上的凸起，并且填充沟槽。
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43.发明授权公开(公告)号：US09070702B2
公开(公告)日：2015-06-30
申请号：US14377263
申请日：2013-02-07
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
IPC分类号： H01L23/48 , H01L23/00 , C07K14/47 , B82Y5/00 , B82Y40/00 , B82B3/00 , H01L25/065 , H01L25/00 , B29C41/00 , B82Y15/00
CPC分类号： H01L24/64 , B29C41/003 , B82B3/0019 , B82B3/0052 , B82Y5/00 , B82Y15/00 , B82Y40/00 , C07K14/4716 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/70 , H01L24/82 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L2224/11524 , H01L2224/13018 , H01L2224/13193 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/1366 , H01L2224/13693 , H01L2224/14051 , H01L2224/16059 , H01L2224/16105 , H01L2224/16106 , H01L2224/1613 , H01L2224/16137 , H01L2224/16145 , H01L2224/24137 , H01L2224/245 , H01L2224/82101 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2924/0695 , H01L2924/12042 , H01L2924/1461 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： The present invention relates to a method for preparing three-dimensional actin structures having a well-defined shape and displaying improved mechanical rigidity. This method comprises the steps of (a) providing a polymerization solution comprising actin monomers, a branching agent and a capping agent, (b) providing at least one surface having thereon a pattern which is coated with a nucleating agent, and (c) contacting the at least one surface of step (b) with the polymerization solution of step (a) so as to induce the polymerization of actin and obtain the said desired three-dimensional actin structure. Applications of the present invention in various technological fields such as microelectronics are also provided.
摘要翻译： 本发明涉及一种制备具有良好定义形状并显示出改进的机械刚性的三维肌动蛋白结构的方法。 该方法包括以下步骤：（a）提供包含肌动蛋白单体，支化剂和封端剂的聚合溶液，（b）提供其上具有涂覆有成核剂的图案的至少一个表面，和（c） 步骤（b）的至少一个表面与步骤（a）的聚合溶液引发肌动蛋白的聚合并获得所需的三维肌动蛋白结构。 还提供了本发明在各种技术领域如微电子学中的应用。
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公开(公告)号：US20150132941A1
公开(公告)日：2015-05-14
申请号：US14604503
申请日：2015-01-23
发明人： Chung-Shi Liu , Chen-Hua Yu
IPC分类号： H01L23/00
CPC分类号： H01L23/528 , H01L23/48 , H01L23/481 , H01L23/482 , H01L23/4824 , H01L23/485 , H01L23/49811 , H01L23/49838 , H01L23/52 , H01L23/522 , H01L23/5226 , H01L23/53228 , H01L23/5329 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/13 , H01L2224/0225 , H01L2224/0226 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/11464 , H01L2224/1147 , H01L2224/13 , H01L2224/13018 , H01L2224/13026 , H01L2224/13082 , H01L2224/13099 , H01L2224/13147 , H01L2224/13155 , H01L2224/16 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07025 , H01L2924/19041 , H01L2924/35121 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.
摘要翻译： 公开了一种用于形成半导体管芯接触结构的系统和方法。 一个实施例包括顶层金属接触，例如铜，其厚度足够大以充当底层低k，极低k或超低k电介质层的缓冲器。 可以在顶层金属接触件上方形成接触焊盘或后钝化互连，并且可以形成铜柱或焊料凸块以与顶层金属接触件电连接。
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45.发明申请公开(公告)号：US20150132889A1
公开(公告)日：2015-05-14
申请号：US14548093
申请日：2014-11-19
发明人： Chen-Hua Yu , Mirng-Ji Lii , Chung-Shi Liu , Ming-Da Cheng
CPC分类号： H01L25/0657 , H01L23/49811 , H01L23/49816 , H01L23/49894 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/105 , H01L25/50 , H01L2224/038 , H01L2224/0401 , H01L2224/04042 , H01L2224/05023 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05552 , H01L2224/05564 , H01L2224/05568 , H01L2224/05573 , H01L2224/05611 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05693 , H01L2224/11019 , H01L2224/1134 , H01L2224/11823 , H01L2224/11825 , H01L2224/1184 , H01L2224/13017 , H01L2224/13018 , H01L2224/13019 , H01L2224/13023 , H01L2224/13082 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/1357 , H01L2224/1358 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2224/16057 , H01L2224/16058 , H01L2224/16148 , H01L2224/16225 , H01L2224/16503 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2224/48 , H01L2224/48611 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48693 , H01L2224/48711 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48793 , H01L2224/48811 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48893 , H01L2224/73204 , H01L2224/81009 , H01L2224/81026 , H01L2224/81192 , H01L2224/81193 , H01L2224/81815 , H01L2224/83104 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2225/1023 , H01L2225/1058 , H01L2924/00012 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/12042 , H01L2924/15311 , H01L2924/15321 , H01L2924/15331 , H01L2924/157 , H01L2924/15788 , H01L2924/181 , H01L2924/00 , H01L2224/81 , H01L2924/01029 , H01L2924/01006
摘要： Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.
摘要翻译： 实施例涉及包装封装（PoP）结构，包括柱状灯泡和形成PoP结构的方法。 根据实施例，结构包括第一基板，螺柱灯泡，模具，第二基板和电连接器。 螺柱灯泡耦合到第一基板的第一表面。 模具附接到第一基板的第一表面。 电连接器耦合到第二基板，并且相应的电连接器耦合到相应的螺柱灯泡。
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公开(公告)号：US09018757B2
公开(公告)日：2015-04-28
申请号：US13943256
申请日：2013-07-16
发明人： Chung-Hao Tsai , Chuei-Tang Wang , Chen-Hua Yu
IPC分类号： H01L23/48 , H01L23/498
CPC分类号： H01L23/49811 , H01L23/3114 , H01L23/3192 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/02125 , H01L2224/02331 , H01L2224/02351 , H01L2224/02375 , H01L2224/02377 , H01L2224/0345 , H01L2224/03462 , H01L2224/0347 , H01L2224/03828 , H01L2224/0401 , H01L2224/04105 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05169 , H01L2224/05548 , H01L2224/05552 , H01L2224/05557 , H01L2224/05568 , H01L2224/05647 , H01L2224/10145 , H01L2224/11334 , H01L2224/1134 , H01L2224/11849 , H01L2224/12105 , H01L2224/13006 , H01L2224/13014 , H01L2224/13018 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2224/1411 , H01L2924/1305 , H01L2924/13091 , H01L2924/181 , H01L2924/18162 , H01L2924/3841 , H01L2924/00 , H01L2924/00014 , H01L2224/05624 , H01L2224/05669 , H01L2224/05666 , H01L2224/0346 , H01L2924/00012 , H01L2924/014
摘要： Embodiments of mechanisms for forming a semiconductor die are provided. The semiconductor die includes a semiconductor substrate and a protection layer formed over the semiconductor substrate. The semiconductor die also includes a conductive layer conformally formed over the protection layer, and a recess is formed in the conductive layer. The recess surrounds a region of the conductive layer. The semiconductor die further includes a solder bump formed over the region of the conductive layer surrounded by the recess.
摘要翻译： 提供了用于形成半导体管芯的机构的实施例。 半导体管芯包括半导体衬底和形成在半导体衬底上的保护层。 半导体管芯还包括在保护层上保形地形成的导电层，并且在导电层中形成凹部。 凹部围绕导电层的区域。 半导体管芯还包括形成在由凹部包围的导电层的区域上的焊料凸块。
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47.发明授权公开(公告)号：US08922009B2
公开(公告)日：2014-12-30
申请号：US13846570
申请日：2013-03-18
申请人： SK Hynix Inc.
发明人： Taek Joong Kim , Yong Su Han
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03462 , H01L2224/03912 , H01L2224/0401 , H01L2224/05026 , H01L2224/05557 , H01L2224/05572 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/10126 , H01L2224/11462 , H01L2224/1147 , H01L2224/1182 , H01L2224/11831 , H01L2224/13006 , H01L2224/13018 , H01L2224/13147 , H01L2224/13565 , H01L2224/1357 , H01L2224/13686 , H01L2924/00014 , H01L2924/00012 , H01L2924/053
摘要： The bump structure includes a metal pattern disposed on an electrode pad to have a vertical sidewall and a recessed region surrounded by the vertical sidewalls, a metal post including a lower portion inserted into the recessed region and a protruded portion upwardly extending from the lower portion, and a passivation spacer on a sidewall of the metal post. The metal post is electrically connected to the electrode pad.
摘要翻译： 凸起结构包括设置在电极焊盘上的金属图案，具有垂直侧壁和由垂直侧壁包围的凹陷区域，金属柱包括插入凹入区域中的下部部分和从下部向上延伸的突出部分， 以及在金属柱的侧壁上的钝化间隔物。 金属柱电连接到电极焊盘。
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公开(公告)号：US20140363966A1
公开(公告)日：2014-12-11
申请号：US14468236
申请日：2014-08-25
发明人： Cheng-Chung Lin , Chung-Shi Liu , Meng-Wei Chou , Kuo Cheng Lin , Wen-Hsiung Lu , Chien Ling Hwang , Ying-Jui Huang , De-Yuan Lu
IPC分类号： H01L23/00
CPC分类号： H01L24/11 , H01L21/02052 , H01L21/32125 , H01L21/76873 , H01L21/76885 , H01L23/488 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2221/1084 , H01L2224/03912 , H01L2224/0401 , H01L2224/05073 , H01L2224/05541 , H01L2224/05573 , H01L2224/1111 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11614 , H01L2224/1181 , H01L2224/11849 , H01L2224/11903 , H01L2224/1191 , H01L2224/11912 , H01L2224/13005 , H01L2224/13017 , H01L2224/13018 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/81191 , H01L2924/00013 , H01L2924/01006 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01059 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0541 , H01L2924/07025 , H01L2924/10329 , H01L2924/14 , H01L2924/20102 , H01L2924/3512 , H01L2924/381 , H01L2924/3841 , H01L2924/0105 , H01L2924/00014 , H01L2224/13099 , H01L2924/207
摘要： Apparatus and methods for providing solder pillar bumps. Pillar bump connections are formed on input/output terminals for integrated circuits by forming a pillar of conductive material using plating of a conductive material over terminals of an integrated circuit. A base portion of the pillar bump has a greater width than an upper portion. A cross-section of the base portion of the pillar bump may make a trapezoidal, rectangular, or sloping shape. Solder material may be formed on the top surface of the pillar. The resulting solder pillar bumps form fine pitch package solder connections that are more reliable than those of the prior art.
摘要翻译： 用于提供焊料柱凸块的装置和方法。 通过在集成电路的端子上通过导电材料的电镀形成导电材料的支柱，在集成电路的输入/输出端子上形成支柱凸点连接。 柱状凸块的基部具有比上部更大的宽度。 柱形凸起的基部的横截面可以形成梯形，矩形或倾斜的形状。 焊料可以形成在柱的顶表面上。 所得到的焊料柱凸起形成比现有技术更可靠的细间距封装焊接连接。
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公开(公告)号：US20140329381A1
公开(公告)日：2014-11-06
申请号：US14071459
申请日：2013-11-04
发明人： Wenqi ZHANG , Haiyang GU , Chongshen SONG
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L21/30625 , H01L21/3212 , H01L21/76898 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/05009 , H01L2224/05558 , H01L2224/0557 , H01L2224/05666 , H01L2224/05676 , H01L2224/05681 , H01L2224/05686 , H01L2224/1134 , H01L2224/11462 , H01L2224/13005 , H01L2224/13018 , H01L2224/13082 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2924/12042 , H01L2924/00014 , H01L2924/2064 , H01L2924/013 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/00
摘要： A TSV exposing process is provided, including: performing a mechanical grinding process on the substrate back surface of a substrate with a TSV conductive column, a liner between the substrate and the TSV conductive column; performing a first and a second chemical mechanical polishing process on the grinded substrate back surface; then performing an etching on the substrate back surface, and making the TSV backside reveal more than 10 μm.
摘要翻译： 提供了一种TSV曝光工艺，其包括：利用TSV导电柱，衬底和TSV导电柱之间的衬垫在衬底的衬底背面上进行机械研磨过程; 在研磨的基板背面上进行第一和第二化学机械抛光工艺; 然后对基板背面进行蚀刻，使TSV背面显示超过10μm。
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公开(公告)号：US20140264843A1
公开(公告)日：2014-09-18
申请号：US13901279
申请日：2013-05-23
发明人： Jing-Cheng Lin , Cheng-Lin Huang
IPC分类号： H01L23/00
CPC分类号： H01L24/81 , H01L21/4853 , H01L21/486 , H01L23/293 , H01L23/3192 , H01L23/49811 , H01L23/49827 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0401 , H01L2224/05009 , H01L2224/05022 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05582 , H01L2224/05647 , H01L2224/1134 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/13005 , H01L2224/13017 , H01L2224/13018 , H01L2224/13026 , H01L2224/13084 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16058 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/16503 , H01L2224/16507 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/8181 , H01L2224/81815 , H01L2225/06513 , H01L2924/15311 , H01L2924/3656 , H01L2924/00014 , H01L2924/206 , H01L2924/00012 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/01047 , H01L2924/01029 , H01L2924/00
摘要： An embodiment is an integrated circuit structure including a first die having a bump structure, and a second die having a pad structure. The first die is attached to the second die by bonding the bump structure and the pad structure. The bump structure includes a metal pillar, a metal cap layer on the metal pillar, a metal insertion layer on the metal cap layer, and a solder layer on the metal insertion layer. The pad structure includes at least one of a nickel (Ni) layer, a palladium (Pd) layer or a gold (Au) layer.
摘要翻译： 一个实施例是集成电路结构，其包括具有凸块结构的第一管芯和具有衬垫结构的第二管芯。 通过结合凸起结构和垫结构，将第一模具附接到第二模具。 凸块结构包括金属支柱，金属支柱上的金属盖层，金属盖层上的金属插入层和金属插入层上的焊料层。 垫结构包括镍（Ni）层，钯（Pd）层或金（Au）层中的至少一种。
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