公开(公告)号：US11915994B2

公开(公告)日：2024-02-27

申请号：US17401276

申请日：2021-08-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Yen Hsieh ,  Chih-Horng Chang ,  Chung-Yu Lu

IPC分类号： H01L23/38 ,  H01L25/065 ,  H01L23/498 ,  H01L23/48 ,  H10N10/01

CPC分类号： H01L23/38 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49833 ,  H01L23/49838 ,  H01L25/0655 ,  H01L25/0657 ,  H10N10/01 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06589

摘要： A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

公开(公告)号：US20210327806A1

公开(公告)日：2021-10-21

申请号：US17359892

申请日：2021-06-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo Lung Pan ,  Shu-Rong Chun ,  Teng-Yuan Lo ,  Hung-Yi Kuo ,  Chih-Horng Chang ,  Tin-Hao Kuo ,  Hao-Yi Tsai

IPC分类号： H01L23/522 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065

摘要： In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

公开(公告)号：US20170103933A1

公开(公告)日：2017-04-13

申请号：US15388572

申请日：2016-12-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Horng Chang ,  Tin-Hao Kuo ,  Tsung-Fu Tsai ,  Min-Feng Ku

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/29 ,  H01L21/78 ,  H01L25/065 ,  H01L23/498

CPC分类号： H01L23/3121 ,  H01L21/304 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L21/82 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00

摘要： A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

公开(公告)号：US09059158B2

公开(公告)日：2015-06-16

申请号：US14335084

申请日：2014-07-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tsung-Fu Tsai ,  Yian-Liang Kuo ,  Chih-Horng Chang

IPC分类号： H01L23/02 ,  H01L23/498 ,  H01L23/00 ,  H01L21/768 ,  H01L23/535

CPC分类号： H01L23/49811 ,  H01L21/76885 ,  H01L21/76886 ,  H01L23/535 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03424 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03848 ,  H01L2224/03901 ,  H01L2224/03903 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/013 ,  H01L2924/01046 ,  H01L2924/01039 ,  H01L2924/01016 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01028 ,  H01L2224/034 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device comprises a semiconductor substrate, an under-bump metallization (UBM) structure overlying the semiconductor substrate, and a solder bump overlying and electrically connected to the UBM structure. The UBM structure comprises a first metallization layer comprising a first metal, a second metallization layer comprising a second metal different from the first metal, and a first intermetallic compound (IMC) layer between the first metallization layer and the second metallization layer, the first IMC layer comprising the first metal and the second metal.

摘要翻译： 半导体器件包括半导体衬底，覆盖半导体衬底的凸起下金属化（UBM）结构以及覆盖并电连接到UBM结构的焊料凸块。 UBM结构包括第一金属化层，其包括第一金属，第二金属化层，第二金属化层包括不同于第一金属的第二金属，以及在第一金属化层和第二金属化层之间的第一金属间化合物（IMC）层，第一IMC 层，其包含第一金属和第二金属。

公开(公告)号：US20140252614A1

公开(公告)日：2014-09-11

申请号：US13895099

申请日：2013-05-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Horng Chang ,  Jie-Cheng Deng ,  Tin-Hao Kuo ,  Ying-Yu Chen

IPC分类号： H01L21/56 ,  H01L23/48

CPC分类号： H01L23/48 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3142 ,  H01L24/13 ,  H01L24/16 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83051 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83

摘要： A surface treatment and an apparatus for semiconductor packaging are provided. In an embodiment, a surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

摘要翻译： 提供表面处理和半导体封装装置。 在一个实施例中，处理导电层的表面以产生粗糙表面。 在一个实例中，在导电层的表面上形成纳米线。 在铜导电层的情况下，纳米线可以包括CuO层。 在另一个实例中，在导电层的表面上形成复合化合物。 络合物可以使用例如硫醇和亚磷酸三甲酯形成。

公开(公告)号：US10811338B2

公开(公告)日：2020-10-20

申请号：US16717136

申请日：2019-12-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Horng Chang ,  Jie-Cheng Deng ,  Tin-Hao Kuo ,  Ying-Yu Chen

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

摘要： A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

公开(公告)号：US09425180B2

公开(公告)日：2016-08-23

申请号：US14550337

申请日：2014-11-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Horng Chang ,  Tin-Hao Kuo

IPC分类号： H01L25/00 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L25/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/11823 ,  H01L2224/11824 ,  H01L2224/11831 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/92125 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0541 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/00

摘要： A die has a top surface, and a metal pillar having a portion protruding over the top surface of the die. A sidewall of the metal pillar has nano-wires. The die is bonded to a package substrate. An underfill is filled into the gap between the die and the package substrate.

摘要翻译： 模具具有顶表面和金属柱，其具有在模具的顶表面上突出的部分。 金属柱的侧壁具有纳米线。 模具结合到封装衬底。 将底部填充物填充到管芯和封装衬底之间的间隙中。

公开(公告)号：US09318458B2

公开(公告)日：2016-04-19

申请号：US14800934

申请日：2015-07-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chih-Horng Chang ,  Tin-Hao Kuo ,  Chen-Shien Chen ,  Yen-Liang Lin

IPC分类号： H01L23/00

CPC分类号： H01L24/16 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/10145 ,  H01L2224/11849 ,  H01L2224/13011 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13018 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/1412 ,  H01L2224/14152 ,  H01L2224/14153 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81345 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/2064 ,  Y10T428/12493 ,  Y10T428/24479 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A bump structure includes a first end; and a second end opposite the first end. The bump structure further includes a side connected between the first end and the second end, wherein the side comprises a recess for a reflowed solder material to fill, and the recess defines a first surface adjacent to the first end and a second surface adjacent to the second end.

摘要翻译： 凸块结构包括第一端; 以及与第一端相对的第二端。 凸起结构还包括连接在第一端和第二端之间的侧面，其中侧面包括用于回流焊料材料填充的凹槽，凹部限定与第一端相邻的第一表面和邻近第一端的第二表面 第二端

公开(公告)号：US08907479B2

公开(公告)日：2014-12-09

申请号：US13794698

申请日：2013-03-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Horng Chang ,  Tin-Hao Kuo

IPC分类号： H01L23/485 ,  H01L21/56 ,  H01L23/498

CPC分类号： H01L25/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/11823 ,  H01L2224/11824 ,  H01L2224/11831 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/92125 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0541 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/00

摘要： A die has a top surface, and a metal pillar having a portion protruding over the top surface of the die. A sidewall of the metal pillar has nano-wires. The die is bonded to a package substrate. An underfill is filled into the gap between the die and the package substrate.

摘要翻译： 模具具有顶表面和金属柱，其具有在模具的顶表面上突出的部分。 金属柱的侧壁具有纳米线。 模具结合到封装衬底。 将底部填充物填充到管芯和封装衬底之间的间隙中。

公开(公告)号：US20240297114A1

公开(公告)日：2024-09-05

申请号：US18663670

申请日：2024-05-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo Lung Pan ,  Shu-Rong Chun ,  Teng-Yuan Lo ,  Hung-Yi Kuo ,  Chih-Horng Chang ,  Tin-Hao Kuo ,  Hao-Yi Tsai

IPC分类号： H01L23/522 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

CPC分类号： H01L23/5226 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/76837 ,  H01L21/76871 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/49822 ,  H01L24/32 ,  H01L24/83 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02331 ,  H01L2224/32501 ,  H01L2924/0665 ,  H01L2924/15311

摘要： In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.