公开(公告)号：US20180350692A1

公开(公告)日：2018-12-06

申请号：US16050028

申请日：2018-07-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jie-Cheng Deng ,  Horng-Huei Tseng ,  Yi-Jen Chen

IPC: H01L21/8234 ,  H01L21/033 ,  H01L21/311 ,  H01L29/66 ,  H01L27/088 ,  H01L21/3213 ,  H01L21/32 ,  H01L21/84 ,  H01L27/02 ,  H01L29/78

CPC classification number: H01L21/823431 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/845 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/7848

Abstract: A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.

公开(公告)号：US10811338B2

公开(公告)日：2020-10-20

申请号：US16717136

申请日：2019-12-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Horng Chang ,  Jie-Cheng Deng ,  Tin-Hao Kuo ,  Ying-Yu Chen

IPC: H01L23/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

公开(公告)号：US20200126893A1

公开(公告)日：2020-04-23

申请号：US16717136

申请日：2019-12-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Horng Chang ,  Jie-Cheng Deng ,  Tin-Hao Kuo ,  Ying-Yu Chen

IPC: H01L23/48 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

公开(公告)号：US10522444B2

公开(公告)日：2019-12-31

申请号：US13895099

申请日：2013-05-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Horng Chang ,  Jie-Cheng Deng ,  Tin-Hao Kuo ,  Ying-Yu Chen

IPC: H01L23/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. In an embodiment, a surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

公开(公告)号：US11251085B2

公开(公告)日：2022-02-15

申请号：US16050028

申请日：2018-07-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jie-Cheng Deng ,  Horng-Huei Tseng ,  Yi-Jen Chen

IPC: H01L21/82 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/033 ,  H01L21/32 ,  H01L27/088 ,  H01L21/84 ,  H01L27/02 ,  H01L29/78

Abstract: A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.

公开(公告)号：US20140252614A1

公开(公告)日：2014-09-11

申请号：US13895099

申请日：2013-05-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Horng Chang ,  Jie-Cheng Deng ,  Tin-Hao Kuo ,  Ying-Yu Chen

IPC: H01L21/56 ,  H01L23/48

CPC classification number: H01L23/48 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3142 ,  H01L24/13 ,  H01L24/16 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83051 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. In an embodiment, a surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Abstract translation: 提供表面处理和半导体封装装置。 在一个实施例中，处理导电层的表面以产生粗糙表面。 在一个实例中，在导电层的表面上形成纳米线。 在铜导电层的情况下，纳米线可以包括CuO层。 在另一个实例中，在导电层的表面上形成复合化合物。 络合物可以使用例如硫醇和亚磷酸三甲酯形成。