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公开(公告)号：US20140252600A1
公开(公告)日：2014-09-11
申请号：US13794698
申请日：2013-03-11
发明人： Chih-Horng Chang , Tin-Hao Kuo
IPC分类号： H01L23/498 , H01L21/56
CPC分类号： H01L25/50 , H01L21/56 , H01L21/563 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/81 , H01L2224/11823 , H01L2224/11824 , H01L2224/11831 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81801 , H01L2224/92125 , H01L2924/01322 , H01L2924/014 , H01L2924/0541 , H01L2924/15311 , H01L2924/20103 , H01L2924/00
摘要： A die has a top surface, and a metal pillar having a portion protruding over the top surface of the die. A sidewall of the metal pillar has nano-wires. The die is bonded to a package substrate. An underfill is filled into the gap between the die and the package substrate.
摘要翻译： 模具具有顶表面和金属柱，其具有在模具的顶表面上突出的部分。 金属柱的侧壁具有纳米线。 模具结合到封装衬底。 将底部填充物填充到管芯和封装衬底之间的间隙中。
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公开(公告)号：US20130299965A1
公开(公告)日：2013-11-14
申请号：US13467465
申请日：2012-05-09
申请人： Jaspreet S. Gandhi
发明人： Jaspreet S. Gandhi
IPC分类号： H01L23/498 , H01L21/283
CPC分类号： H01L24/81 , H01L23/3142 , H01L23/3157 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0401 , H01L2224/05567 , H01L2224/05568 , H01L2224/06181 , H01L2224/10145 , H01L2224/1182 , H01L2224/11824 , H01L2224/11848 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/136 , H01L2224/13647 , H01L2224/13655 , H01L2224/1369 , H01L2224/16145 , H01L2224/16238 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81355 , H01L2224/81815 , H01L2224/81911 , H01L2924/00014 , H01L2924/01322 , H01L2924/3651 , H01L2924/00012 , H01L2924/01016 , H01L2924/01014 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
摘要： Semiconductor assemblies, structures, and methods of fabrication are disclosed. A coating is formed on an electrically conductive pillar. The coating, which may be formed from at least one of a silane material and an organic solderability protectant material, may bond to a conductive material of the electrically conductive pillar and, optionally, to other metallic materials of the electrically conductive pillar. The coating may also bond to substrate passivation material, if present, or to otherwise-exposed surfaces of a substrate and a bond pad. The coating may be selectively formed on the conductive material. Material may not be removed from the coating after formation thereof and before reflow of the solder for die attach. The coating may isolate at least the conductive material from solder, inhibiting solder wicking or slumping along the conductive material and may enhance adhesion between the resulting bonded conductive element and an underfill material.
摘要翻译： 公开了半导体组件，结构和制造方法。 在导电柱上形成涂层。 可以由硅烷材料和有机可焊性保护剂材料中的至少一种形成的涂层可以结合到导电柱的导电材料和任选地粘合到导电柱的其它金属材料。 涂层还可以结合到基底钝化材料（如果存在）上，或者粘合到基底和接合垫的其它暴露表面。 可以在导电材料上选择性地形成涂层。 在其形成之后并且在用于管芯附着的焊料的回流之前，材料可能不会从涂层中去除。 涂层可以至少将导电材料与焊料隔离开来，阻止焊料芯吸或沿导电材料塌陷，并且可以增强所得到的粘合的导电元件和底部填充材料之间的粘附。
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公开(公告)号：US08970034B2
公开(公告)日：2015-03-03
申请号：US13467465
申请日：2012-05-09
申请人： Jaspreet S. Gandhi
发明人： Jaspreet S. Gandhi
IPC分类号： H01L23/48
CPC分类号： H01L24/81 , H01L23/3142 , H01L23/3157 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0401 , H01L2224/05567 , H01L2224/05568 , H01L2224/06181 , H01L2224/10145 , H01L2224/1182 , H01L2224/11824 , H01L2224/11848 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/136 , H01L2224/13647 , H01L2224/13655 , H01L2224/1369 , H01L2224/16145 , H01L2224/16238 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81355 , H01L2224/81815 , H01L2224/81911 , H01L2924/00014 , H01L2924/01322 , H01L2924/3651 , H01L2924/00012 , H01L2924/01016 , H01L2924/01014 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
摘要： Semiconductor assemblies, structures, and methods of fabrication are disclosed. A coating is formed on an electrically conductive pillar. The coating, which may be formed from at least one of a silane material and an organic solderability protectant material, may bond to a conductive material of the electrically conductive pillar and, optionally, to other metallic materials of the electrically conductive pillar. The coating may also bond to substrate passivation material, if present, or to otherwise-exposed surfaces of a substrate and a bond pad. The coating may be selectively formed on the conductive material. Material may not be removed from the coating after formation thereof and before reflow of the solder for die attach. The coating may isolate at least the conductive material from solder, inhibiting solder wicking or slumping along the conductive material and may enhance adhesion between the resulting bonded conductive element and an underfill material.
摘要翻译： 公开了半导体组件，结构和制造方法。 在导电柱上形成涂层。 可以由硅烷材料和有机可焊性保护剂材料中的至少一种形成的涂层可以结合到导电柱的导电材料和任选地粘合到导电柱的其它金属材料。 涂层还可以结合到基底钝化材料（如果存在）上，或者粘合到基底和接合垫的其它暴露表面。 可以在导电材料上选择性地形成涂层。 在其形成之后并且在用于管芯附着的焊料的回流之前，材料可能不会从涂层中去除。 涂层可以至少将导电材料与焊料隔离开来，阻止焊料芯吸或沿导电材料塌陷，并且可以增强所得到的粘合的导电元件和底部填充材料之间的粘附。
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公开(公告)号：US20120178251A1
公开(公告)日：2012-07-12
申请号：US13004376
申请日：2011-01-11
申请人： Zheng-Yi LIM , Yi-Wen WU , Wen-Hsiung LU , Chih-Wei LIN , Tzong-Huann YANG , Hsiu-Jen LIN , Ming-Da CHENG , Chung-Shi LIU
发明人： Zheng-Yi LIM , Yi-Wen WU , Wen-Hsiung LU , Chih-Wei LIN , Tzong-Huann YANG , Hsiu-Jen LIN , Ming-Da CHENG , Chung-Shi LIU
IPC分类号： H01L21/768
CPC分类号： H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/1181 , H01L2224/11824 , H01L2224/11827 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/1357 , H01L2224/13583 , H01L2224/13693 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/01047 , H01L2924/01024 , H01L2924/01028 , H01L2924/0105 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/01073 , H01L2924/01049 , H01L2924/0103 , H01L2924/01025 , H01L2924/01022 , H01L2924/01032 , H01L2924/01078 , H01L2924/01012 , H01L2924/01013 , H01L2924/0104 , H01L2924/01046 , H01L2924/01082 , H01L2924/01029 , H01L2924/01083 , H01L2924/01051 , H01L2224/03 , H01L2224/11 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.
摘要翻译： 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在衬底上延伸的钝化层，该钝化层在接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。
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公开(公告)号：US09425180B2
公开(公告)日：2016-08-23
申请号：US14550337
申请日：2014-11-21
发明人： Chih-Horng Chang , Tin-Hao Kuo
IPC分类号： H01L25/00 , H01L21/56 , H01L23/498 , H01L23/00 , H01L23/31
CPC分类号： H01L25/50 , H01L21/56 , H01L21/563 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/81 , H01L2224/11823 , H01L2224/11824 , H01L2224/11831 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81801 , H01L2224/92125 , H01L2924/01322 , H01L2924/014 , H01L2924/0541 , H01L2924/15311 , H01L2924/20103 , H01L2924/00
摘要： A die has a top surface, and a metal pillar having a portion protruding over the top surface of the die. A sidewall of the metal pillar has nano-wires. The die is bonded to a package substrate. An underfill is filled into the gap between the die and the package substrate.
摘要翻译： 模具具有顶表面和金属柱，其具有在模具的顶表面上突出的部分。 金属柱的侧壁具有纳米线。 模具结合到封装衬底。 将底部填充物填充到管芯和封装衬底之间的间隙中。
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公开(公告)号：US20150162302A1
公开(公告)日：2015-06-11
申请号：US14625325
申请日：2015-02-18
发明人： Jaspreet S. Gandhi
IPC分类号： H01L23/00
CPC分类号： H01L24/81 , H01L23/3142 , H01L23/3157 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0401 , H01L2224/05567 , H01L2224/05568 , H01L2224/06181 , H01L2224/10145 , H01L2224/1182 , H01L2224/11824 , H01L2224/11848 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/136 , H01L2224/13647 , H01L2224/13655 , H01L2224/1369 , H01L2224/16145 , H01L2224/16238 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81355 , H01L2224/81815 , H01L2224/81911 , H01L2924/00014 , H01L2924/01322 , H01L2924/3651 , H01L2924/00012 , H01L2924/01016 , H01L2924/01014 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
摘要： Semiconductor assemblies, structures, and methods of fabrication are disclosed. A coating is formed on an electrically conductive pillar. The coating, which may be formed from at least one of a silane material and an organic solderability protectant material, may bond to a conductive material of the electrically conductive pillar and, optionally, to other metallic materials of the electrically conductive pillar. The coating may also bond to substrate passivation material, if present, or to otherwise-exposed surfaces of a substrate and a bond pad. The coating may be selectively formed on the conductive material. Material may not be removed from the coating after formation thereof and before reflow of the solder for die attach. The coating may isolate at least the conductive material from solder, inhibiting solder wicking or slumping along the conductive material and may enhance adhesion between the resulting bonded conductive element and an underfill material.
摘要翻译： 公开了半导体组件，结构和制造方法。 在导电柱上形成涂层。 可以由硅烷材料和有机可焊性保护剂材料中的至少一种形成的涂层可以结合到导电柱的导电材料和任选地粘合到导电柱的其它金属材料。 涂层还可以结合到基底钝化材料（如果存在）上，或者粘合到基底和接合垫的其它暴露表面。 可以在导电材料上选择性地形成涂层。 在其形成之后并且在用于管芯附着的焊料的回流之前，材料可能不会从涂层中去除。 涂层可以至少将导电材料与焊料隔离开来，阻止焊料芯吸或沿导电材料塌陷，并且可以增强所得到的粘合的导电元件和底部填充材料之间的粘附。
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公开(公告)号：US08907479B2
公开(公告)日：2014-12-09
申请号：US13794698
申请日：2013-03-11
发明人： Chih-Horng Chang , Tin-Hao Kuo
IPC分类号： H01L23/485 , H01L21/56 , H01L23/498
CPC分类号： H01L25/50 , H01L21/56 , H01L21/563 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/81 , H01L2224/11823 , H01L2224/11824 , H01L2224/11831 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81801 , H01L2224/92125 , H01L2924/01322 , H01L2924/014 , H01L2924/0541 , H01L2924/15311 , H01L2924/20103 , H01L2924/00
摘要： A die has a top surface, and a metal pillar having a portion protruding over the top surface of the die. A sidewall of the metal pillar has nano-wires. The die is bonded to a package substrate. An underfill is filled into the gap between the die and the package substrate.
摘要翻译： 模具具有顶表面和金属柱，其具有在模具的顶表面上突出的部分。 金属柱的侧壁具有纳米线。 模具结合到封装衬底。 将底部填充物填充到管芯和封装衬底之间的间隙中。
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公开(公告)号：US09224715B2
公开(公告)日：2015-12-29
申请号：US14625325
申请日：2015-02-18
发明人： Jaspreet S. Gandhi
IPC分类号： H01L21/44 , H01L23/00 , H01L23/498 , H01L23/31
CPC分类号： H01L24/81 , H01L23/3142 , H01L23/3157 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0401 , H01L2224/05567 , H01L2224/05568 , H01L2224/06181 , H01L2224/10145 , H01L2224/1182 , H01L2224/11824 , H01L2224/11848 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/136 , H01L2224/13647 , H01L2224/13655 , H01L2224/1369 , H01L2224/16145 , H01L2224/16238 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81355 , H01L2224/81815 , H01L2224/81911 , H01L2924/00014 , H01L2924/01322 , H01L2924/3651 , H01L2924/00012 , H01L2924/01016 , H01L2924/01014 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
摘要： Semiconductor assemblies, structures, and methods of fabrication are disclosed. A coating is formed on an electrically conductive pillar. The coating, which may be formed from at least one of a silane material and an organic solderability protectant material, may bond to a conductive material of the electrically conductive pillar and, optionally, to other metallic materials of the electrically conductive pillar. The coating may also bond to substrate passivation material, if present, or to otherwise-exposed surfaces of a substrate and a bond pad. The coating may be selectively formed on the conductive material. Material may not be removed from the coating after formation thereof and before reflow of the solder for die attach. The coating may isolate at least the conductive material from solder, inhibiting solder wicking or slumping along the conductive material and may enhance adhesion between the resulting bonded conductive element and an underfill material.
摘要翻译： 公开了半导体组件，结构和制造方法。 在导电柱上形成涂层。 可以由硅烷材料和有机可焊性保护剂材料中的至少一种形成的涂层可以结合到导电柱的导电材料和任选地粘合到导电柱的其它金属材料。 涂层还可以结合到基底钝化材料（如果存在）上，或者粘合到基底和接合垫的其它暴露表面。 可以在导电材料上选择性地形成涂层。 在其形成之后并且在用于管芯附着的焊料的回流之前，材料可能不会从涂层中去除。 涂层可以至少将导电材料与焊料隔离开来，阻止焊料芯吸或沿导电材料塌陷，并且可以增强所得到的粘合的导电元件和底部填充材料之间的粘附。
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公开(公告)号：US20150104903A1
公开(公告)日：2015-04-16
申请号：US14550337
申请日：2014-11-21
发明人： Chih-Horng Chang , Tin-Hao Kuo
CPC分类号： H01L25/50 , H01L21/56 , H01L21/563 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L24/11 , H01L24/81 , H01L2224/11823 , H01L2224/11824 , H01L2224/11831 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81801 , H01L2224/92125 , H01L2924/01322 , H01L2924/014 , H01L2924/0541 , H01L2924/15311 , H01L2924/20103 , H01L2924/00
摘要： A die has a top surface, and a metal pillar having a portion protruding over the top surface of the die. A sidewall of the metal pillar has nano-wires. The die is bonded to a package substrate. An underfill is filled into the gap between the die and the package substrate.
摘要翻译： 模具具有顶表面和金属柱，其具有在模具的顶表面上突出的部分。 金属柱的侧壁具有纳米线。 模具结合到封装衬底。 将底部填充物填充到管芯和封装衬底之间的间隙中。
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公开(公告)号：US08242011B2
公开(公告)日：2012-08-14
申请号：US13004376
申请日：2011-01-11
申请人： Zheng-Yi Lim , Yi-Wen Wu , Wen-Hsiung Lu , Chih-Wei Lin , Tzong-Huann Yang , Hsiu-Jen Lin , Ming-Da Cheng , Chung-Shi Liu
发明人： Zheng-Yi Lim , Yi-Wen Wu , Wen-Hsiung Lu , Chih-Wei Lin , Tzong-Huann Yang , Hsiu-Jen Lin , Ming-Da Cheng , Chung-Shi Liu
IPC分类号： H01L21/44
CPC分类号： H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/1181 , H01L2224/11824 , H01L2224/11827 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/1357 , H01L2224/13583 , H01L2224/13693 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/01047 , H01L2924/01024 , H01L2924/01028 , H01L2924/0105 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/01073 , H01L2924/01049 , H01L2924/0103 , H01L2924/01025 , H01L2924/01022 , H01L2924/01032 , H01L2924/01078 , H01L2924/01012 , H01L2924/01013 , H01L2924/0104 , H01L2924/01046 , H01L2924/01082 , H01L2924/01029 , H01L2924/01083 , H01L2924/01051 , H01L2224/03 , H01L2224/11 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.
摘要翻译： 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在所述衬底上延伸的钝化层，所述钝化层在所述接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。
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