Invention Grant
- Patent Title: Method of forming metal pillar
- Patent Title (中): 金属柱形成方法
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Application No.: US13004376Application Date: 2011-01-11
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Publication No.: US08242011B2Publication Date: 2012-08-14
- Inventor: Zheng-Yi Lim , Yi-Wen Wu , Wen-Hsiung Lu , Chih-Wei Lin , Tzong-Huann Yang , Hsiu-Jen Lin , Ming-Da Cheng , Chung-Shi Liu
- Applicant: Zheng-Yi Lim , Yi-Wen Wu , Wen-Hsiung Lu , Chih-Wei Lin , Tzong-Huann Yang , Hsiu-Jen Lin , Ming-Da Cheng , Chung-Shi Liu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.
Public/Granted literature
- US20120178251A1 METHOD OF FORMING METAL PILLAR Public/Granted day:2012-07-12
Information query
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