公开(公告)号：US09287171B2

公开(公告)日：2016-03-15

申请号：US14444759

申请日：2014-07-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/10145 ,  H01L2224/11002 ,  H01L2224/1112 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13181 ,  H01L2224/13551 ,  H01L2224/13561 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13686 ,  H01L2224/13687 ,  H01L2224/13688 ,  H01L2224/1369 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method of making a semiconductor device includes forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising sidewalls and a surface region. The method further includes forming a conductive pillar over the UBM layer, the conductive pillar includes sidewalls, wherein the conductive pillar exposes the surface region of the UBM layer. The method further includes forming a non-metal protective structure over the sidewalls of the conductive pillar, wherein the non-metal protective structure contacts the surface region of the UBM layer, and the non-metal protective structure exposes the sidewalls of the UBM layer.

Abstract translation: 制造半导体器件的方法包括在衬底上形成凸块下金属（UBM）层，UBM层包括侧壁和表面区域。 所述方法还包括在所述UBM层上形成导电柱，所述导电柱包括侧壁，其中所述导电柱暴露所述UBM层的表面区域。 所述方法还包括在所述导电柱的侧壁上形成非金属保护结构，其中所述非金属保护结构接触所述UBM层的表面区域，并且所述非金属保护结构暴露所述UBM层的侧壁。

公开(公告)号：US09275965B2

公开(公告)日：2016-03-01

申请号：US14341021

申请日：2014-07-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chien Ling Hwang ,  Zheng-Yi Lim ,  Chung-Shi Liu

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05144 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0539 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/20102 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/00

Abstract: A method of forming an integrated circuit device comprises forming a metal pillar over a semiconductor substrate. The method also comprises forming a solder layer over the metal pillar. The method further comprises forming a metallization layer comprising a cobalt (Co) element, the metallization layer covering the metal pillar and the solder layer. The method additionally comprises thermally reflowing the solder layer to form a solder bump, driving the Co element of the metallization layer into the solder bump. The method also comprises oxidizing the metallization layer to form a metal oxide layer on a sidewall surface of the metal pillar.

Abstract translation: 形成集成电路器件的方法包括在半导体衬底上形成金属柱。 该方法还包括在金属柱上形成焊料层。 该方法还包括形成包含钴（Co）元素的金属化层，金属化层覆盖金属柱和焊料层。 该方法另外包括热回流焊料层以形成焊料凸块，将金属化层的Co元件驱动到焊料凸块中。 该方法还包括氧化金属化层以在金属柱的侧壁表面上形成金属氧化物层。

公开(公告)号：US09226400B2

公开(公告)日：2015-12-29

申请号：US13734266

申请日：2013-01-04

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masato Nomiya ,  Norio Sakai ,  Mitsuyoshi Nishide

IPC: H05K1/03 ,  H05K1/00 ,  H05K1/16 ,  H01R4/58 ,  H05K7/10 ,  H05K1/18 ,  H01L21/48 ,  H01L23/13 ,  H01L23/15 ,  H01L23/498 ,  H01L23/00 ,  H05K3/30 ,  H05K3/46

CPC classification number: H05K1/181 ,  H01L21/4857 ,  H01L23/13 ,  H01L23/15 ,  H01L23/49822 ,  H01L24/16 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/73204 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H05K1/0306 ,  H05K3/305 ,  H05K3/4626 ,  H05K3/4629 ,  H05K2201/0116 ,  H05K2201/10378 ,  H05K2201/10674 ,  H05K2201/10977 ,  H05K2203/1147 ,  Y02P70/613 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49146 ,  H01L2924/00

Abstract: In a method for manufacturing a multilayer ceramic electronic device, a multilayer ceramic element assembly including laminated unsintered ceramic base material layers, a first conductor pattern, a seat portion disposed in a surface of the multilayer ceramic element assembly and arranged to mount a surface mount electronic device thereon, a second conductor pattern connected to the surface mount electronic device, and a resin introduction portion located outside a vertically projected region of the surface mount electronic device and arranged to introduce a resin to the seat portion is prepared. The multilayer ceramic element assembly is fired and the surface mount electronic device is mounted on the seat portion of the fired multilayer ceramic element assembly with the second conductor pattern therebetween. The resin is filled from the resin introduction portion into the seat portion and between the seat portion and the surface mount electronic device and is cured.

Abstract translation: 在多层陶瓷电子器件的制造方法中，包括层叠的未烧结的陶瓷基材层的多层陶瓷元件组件，第一导体图案，配置在所述多层陶瓷元件组件的表面的座部， 设置在其上，连接到表面安装电子设备的第二导体图案，以及位于表面安装电子设备的垂直投影区域外部并且布置成将树脂引入座部的树脂引入部分。 烧结多层陶瓷元件组件，并且表面安装电子器件安装在烧制的多层陶瓷元件组件的座部上，其间具有第二导体图案。 树脂从树脂引入部分填充到座椅部分中，并且在座椅部分和表面安装电子装置之间填充并固化。

公开(公告)号：US09214414B2

公开(公告)日：2015-12-15

申请号：US14560556

申请日：2014-12-04

Applicant: DAI NIPPON PRINTING CO., LTD.

Inventor： Kazunori Oda ,  Masaki Yazaki

IPC: H01L23/495 ,  H01L33/62 ,  F21V21/00 ,  H01L33/52 ,  H01L33/60 ,  H01L23/482 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L33/48

CPC classification number: H01L33/62 ,  F21V7/22 ,  F21V21/00 ,  F21V23/005 ,  F21Y2101/00 ,  F21Y2115/10 ,  H01L23/3142 ,  H01L23/4824 ,  H01L23/495 ,  H01L23/49503 ,  H01L23/49517 ,  H01L23/49548 ,  H01L23/49582 ,  H01L23/49861 ,  H01L23/562 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L33/48 ,  H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/05554 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48639 ,  H01L2224/85439 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A lead frame for mounting LED elements includes a frame body region and a large number of package regions arranged in multiple rows and columns in the frame body region. The package regions each include a die pad on which an LED element is to be mounted and a lead section adjacent to the die pad, the package regions being further constructed to be interconnected via a dicing region. The die pad in one package region and the lead section in another package region upward or downward adjacent to the package region of interest are connected to each other by an inclined reinforcement piece positioned in the dicing region.

公开(公告)号：US20150349227A1

公开(公告)日：2015-12-03

申请号：US14823610

申请日：2015-08-11

Applicant: DAI NIPPON PRINTING CO., LTD.

Inventor： Kazunori ODA ,  Masaki YAZAKI

IPC: H01L33/62 ,  F21V7/22 ,  F21V23/00 ,  H01L33/60

CPC classification number: H01L33/62 ,  F21V7/22 ,  F21V21/00 ,  F21V23/005 ,  F21Y2101/00 ,  F21Y2115/10 ,  H01L23/3142 ,  H01L23/4824 ,  H01L23/495 ,  H01L23/49503 ,  H01L23/49517 ,  H01L23/49548 ,  H01L23/49582 ,  H01L23/49861 ,  H01L23/562 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L33/48 ,  H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/05554 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48639 ,  H01L2224/85439 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A lead frame for mounting LED elements includes a frame body region and a large number of package regions arranged in multiple rows and columns in the frame body region. The package regions each include a die pad on which an LED element is to be mounted and a lead section adjacent to the die pad, the package regions being further constructed to be interconnected via a dicing region. The die pad in one package region and the lead section in another package region upward or downward adjacent to the package region of interest are connected to each other by an inclined reinforcement piece positioned in the dicing region.

Abstract translation: 用于安装LED元件的引线框架包括框架体区域和在框架体区域中布置成多行和多列的大量封装区域。 封装区域各自包括其上要安装LED元件的管芯焊盘和与管芯焊盘相邻的引线部分，所述封装区域还被构造为经由切割区域互连。 一个封装区域中的管芯焊盘和与感兴趣的封装区域相邻的向上或向下的另一个封装区域中的引线部分通过位于切割区域中的倾斜加强件相互连接。

公开(公告)号：US20150325763A1

公开(公告)日：2015-11-12

申请号：US14802347

申请日：2015-07-17

Applicant: DAI NIPPON PRINTING CO., LTD.

Inventor： Kazunori ODA ,  Akira SAKAMOTO ,  Yoshinori MURATA ,  Kenzaburo KAWAI ,  Koichi SUZUKI ,  Megumi OISHI

IPC: H01L33/62 ,  H01L21/56 ,  H01L21/48 ,  H01L23/495 ,  H01L33/52

CPC classification number: H01L21/6835 ,  H01L23/3121 ,  H01L23/49582 ,  H01L23/49861 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48669 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85469 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

Abstract: An LED leadframe or LED substrate includes a main body portion having a mounting surface for mounting an LED element thereover. A reflection metal layer serving as a reflection layer for reflecting light from the LED element is disposed over the mounting surface of the main body portion. The reflection metal layer comprises an alloy of platinum and silver or an alloy of gold and silver. The reflection metal layer efficiently reflects light emitted from the LED element and suppresses corrosion due to the presence of a gas, thereby capable of maintaining reflection characteristics of light from the LED element.

Abstract translation: LED引线框或LED基板包括具有用于在其上安装LED元件的安装表面的主体部分。 作为用于反射来自LED元件的光的反射层的反射金属层设置在主体部的安装面上。 反射金属层包括铂和银的合金或金和银的合金。 反射金属层有效地反射从LED元件发出的光，并且抑制由于气体的存在引起的腐蚀，从而能够保持来自LED元件的光的反射特性。

公开(公告)号：US20150262952A1

公开(公告)日：2015-09-17

申请号：US14208871

申请日：2014-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Li-Guo LEE ,  Yi-Chen LIU ,  Yung-Sheng LIU ,  Yi-Jen LAI ,  Chun-Jen CHEN ,  Hsi-Kuei CHENG

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00012 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01024 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01074 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/00

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a first substrate and a metal pad formed over the first substrate. The semiconductor structure further includes a seed layer formed over the metal pad and a conductive pillar formed over the seed layer. In addition, the seed layer has a sidewall and a bottom surface, and an angle between the sidewall and the bottom surface of the seed layer is in a range from about 20° to about 90°.

Abstract translation: 提供半导体结构及其形成方法。 半导体结构包括形成在第一衬底上的第一衬底和金属衬垫。 半导体结构还包括形成在金属焊盘上的种子层和形成在种子层上的导电柱。 此外，种子层具有侧壁和底表面，并且种子层的侧壁和底表面之间的角度在约20°至约90°的范围内。

公开(公告)号：US09136167B2

公开(公告)日：2015-09-15

申请号：US14465962

申请日：2014-08-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chien Ling Hwang ,  Yi-Wen Wu ,  Chun-Chieh Wang ,  Chung-Shi Liu

IPC: H01L21/768 ,  H01L23/00

CPC classification number: H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03901 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/0569 ,  H01L2224/10126 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11912 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/1369 ,  H01L2224/16238 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/206 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/01028 ,  H01L2924/01022 ,  H01L2924/01046 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/00

Abstract: A method of making a pillar structure includes forming a first under-bump-metallurgy (UBM) layer formed on a pad region of a substrate, wherein the first UBM layer includes sidewalls. The method further includes forming a second UBM layer on the first UBM layer, wherein the second UBM layer includes a sidewall surface, an area of the first UBM layer is greater than an area of the second UBM layer. The method further includes forming a copper-containing pillar on the second UBM layer, wherein the copper-containing pillar includes a sidewall surface and a top surface. The method further includes forming a protection structure on the sidewall surface of the copper-containing pillar and on an entirety of the sidewall surface of the second UBM layer, wherein the protection structure does not cover the sidewalls of the first UBM layer, and the protection structure is a non-metal material.

Abstract translation: 一种制造柱结构的方法包括形成在衬底的焊盘区域上形成的第一下凸点 - 冶金（UBM）层，其中第一UBM层包括侧壁。 该方法还包括在第一UBM层上形成第二UBM层，其中第二UBM层包括侧壁表面，第一UBM层的区域大于第二UBM层的面积。 所述方法还包括在所述第二UBM层上形成含铜柱，其中所述含铜柱包括侧壁表面和顶表面。 所述方法还包括在所述含铜柱的侧壁表面和所述第二UBM层的所述侧壁表面的整体上形成保护结构，其中所述保护结构不覆盖所述第一UBM层的侧壁，并且所述保护 结构是非金属材料。

公开(公告)号：US20150255452A1

公开(公告)日：2015-09-10

申请号：US14712689

申请日：2015-05-14

Applicant: Renesas Electronics Corporation

Inventor： Shinya SUZUKI ,  Kiichi MAKUTA

IPC: H01L27/02 ,  H01L23/00

CPC classification number: H01L24/17 ,  G02F1/13306 ,  G02F1/13452 ,  H01L23/49811 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53238 ,  H01L23/5329 ,  H01L24/10 ,  H01L24/13 ,  H01L24/14 ,  H01L27/0207 ,  H01L27/0248 ,  H01L27/0255 ,  H01L27/0292 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13644 ,  H01L2224/1403 ,  H01L2224/1412 ,  H01L2224/16 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/9211 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/1426 ,  H01L2924/15788 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: To provide a technique capable of reducing the chip size of a semiconductor chip and particularly, a technique capable of reducing the chip size of a semiconductor chip in the form of a rectangle that constitutes an LCD driver by devising a layout arrangement in a short-side direction. In a semiconductor chip that constitutes an LCD driver, input protection circuits are arranged in a lower layer of part of a plurality of input bump electrodes and on the other hand, in a lower layer of the other part of the input bump electrodes, the input protection circuits are not arranged but SRAMs (internal circuits) are arranged.

Abstract translation: 为了提供能够减小半导体芯片的芯片尺寸的技术，特别是能够通过设计短边的布局布置来减小构成LCD驱动器的矩形形式的半导体芯片的芯片尺寸的技术 方向。 在构成LCD驱动器的半导体芯片中，输入保护电路布置在多个输入凸块电极的一部分的下层中，另一方面，在输入凸块电极的另一部分的下层中，输入 不排列保护电路，而是布置SRAM（内部电路）。

公开(公告)号：US20150228533A1

公开(公告)日：2015-08-13

申请号：US14694524

申请日：2015-04-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chien Ling HWANG ,  Hui-Jung TSAI ,  Yi-Wen WU ,  Chung-Shi LIU

IPC: H01L21/768 ,  C25D7/00 ,  C23C14/34 ,  H01L23/00 ,  C25D5/02

CPC classification number: H01L21/7688 ,  C23C14/34 ,  C25D5/022 ,  C25D7/00 ,  H01L21/76879 ,  H01L21/76883 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/0361 ,  H01L2224/03826 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10126 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/13147 ,  H01L2224/1354 ,  H01L2224/13565 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81024 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2225/06513 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method of forming an integrated circuit device includes forming a conductive element over a substrate, wherein the conductive element is over an under bump metallurgy (UBM) layer, and the UBM layer comprises a first UBM layer and a second UBM layer over the first UBM layer. The method further includes etching the second UBM layer to expose a portion of the first UBM layer beyond a periphery of the conductive element. The method further includes forming a protection layer over sidewalls of the conductive element, over sidewalls of the second UBM layer and over a top surface of the first UBM layer. The method further includes etching the first UBM layer to remove a portion of the first UBM layer. The method further includes forming a cap layer over a top surface of the conductive element.

Abstract translation: 形成集成电路器件的方法包括在衬底上形成导电元件，其中导电元件在凸块下金属（UBM）层之上，并且UBM层包括第一UBM上的第一UBM层和第二UBM层 层。 该方法还包括蚀刻第二UBM层以将第一UBM层的一部分暴露于导电元件的外围。 该方法还包括在导电元件的侧壁上形成保护层，在第二UBM层的侧壁上方，以及在第一UBM层的顶表面上。 该方法还包括蚀刻第一UBM层以去除第一UBM层的一部分。 该方法还包括在导电元件的顶表面上形成覆盖层。