摘要:
An apparatus relating generally to a substrate is disclosed. In this apparatus, a first metal layer is on the substrate. The first metal layer has an opening. The opening of the first metal layer has a bottom and one or more sides extending from the bottom. A second metal layer is on the first metal layer. The first metal layer and the second metal layer provide a bowl-shaped structure. An inner surface of the bowl-shaped structure is defined responsive to the opening of the first metal layer and the second metal layer thereon. The opening of the bowl-shaped structure is configured to receive and at least partially retain a bonding material during a reflow process.
摘要:
A through-hole electrode substrate includes a substrate including a through-hole extending from a first aperture of a first surface to a second aperture of a second surface, an area of the second aperture being larger than that of the first aperture, the through-hole having a minimum aperture part between the first aperture and the second aperture, wherein an area of the minimum aperture part in a planer view is smallest among a plurality of areas of the through-hole in a planer view, a filler arranged within the through-hole, and at least one gas discharge member contacting the filler exposed to one of the first surface and the second surface.
摘要:
There is provided a semiconductor device. The semiconductor device of the present invention includes a semiconductor element and a metal buffer layer in an electrical connection to the semiconductor element. The metal buffer layer and the semiconductor element are in a connection with each other by mutual surface contact of the metal buffer layer and the semiconductor element. The metal buffer layer is an external connection terminal used for a mounting with respect to a secondary mount substrate, and the metal buffer layer serves as a buffer part having a stress-relaxation effect between the semiconductor element and the secondary mount substrate.
摘要:
An electronic device includes a first chip carrier and a second chip carrier isolated from the first chip carrier. A first power semiconductor chip is mounted on and electrically connected to the first chip carrier. A second power semiconductor chip is mounted on and electrically connected to the second chip carrier. An electrically insulating material is configured to at least partially surround the first power semiconductor chip and the second power semiconductor chip. An electrical interconnect is configured to electrically connect the first power semiconductor chip to the second power semiconductor chip, wherein the electrical interconnect has at least one of a contact clip and a galvanically deposited conductor.
摘要:
Disclosed is a light emitting device package including a package body including at least one electrode pad disposed on a surface thereof, a light emitting device disposed on the package body, the light emitting device being electrically connected to the electrode pad through a wire, and a via hole electrode passing through the package body, wherein the wire forms a stitch on at least one of the light emitting device and the electrode pad, the light emitting device package further includes a bonding ball disposed on the stitch, and the via hole electrode non-overlaps the stitch and the bonding ball in a vertical direction.
摘要:
In a method for manufacturing a semiconductor device according to the present invention, as shown in FIG. 2(A), a case (2) including a first terminal (1) is placed on a working table (3) with an opening (30) formed at the bottom of the case (2). Subsequently, as shown in FIG. 2(B), a plurality of packages (6,6,6) including second terminals (4) are placed on the working table (3) through the opening (30) of the case (2), forming a clearance (31) between the first terminal (1) and the second terminal (4). As shown in FIG. 2(C), a bonding material (7) is disposed in the clearance (31) so as to electrically connect the first terminal (1) and the second terminal (4). Thus, the exposed surfaces of the packages (6,6,6) in the opening (30) of the case (2) are aligned at the same height, thereby reducing variations in thermal resistance among the packages (6,6,6).
摘要:
A switching power supply in an integrated circuit, an integrated circuit comprising a switching power supply, and a method of assembling a switching power supply in an integrated circuit are disclosed. In one embodiment, the invention provides a three-dimensional switching power supply in an integrated circuit comprising a device layer. The switching power supply comprises three distinct strata arranged in series with the device layer, the three distinct strata including a switching layer including switching circuits, a capacitor layer including banks of capacitors, and an inductor layer including inductors. This switching power supply further comprises a multitude of connectors electrically and mechanically connecting together the device layer, the switching layer, the capacitor layer, and the inductor layer. The switching circuits, the capacitors and the inductors form a switching power supply for supplying power to the device layer.
摘要:
A light emitting module includes: a first substrate including a resin having insulation properties, and a copper component embedded in the resin; a second substrate placed above the copper component of the first substrate, and soldered to the copper component; a mounting electrode formed above the second substrate; and an LED placed above the second substrate, and gold-tin soldered to the mounting electrode.
摘要:
A interposer sandwich structure comprises a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes means for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.
摘要:
Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or “inactive” side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.