公开(公告)号：US08133097B2

公开(公告)日：2012-03-13

申请号：US12437315

申请日：2009-05-07

申请人： Yu-Liang Lin ,  Chien Ling Hwang ,  Jean Wang ,  Chen-Hua Yu

发明人： Yu-Liang Lin ,  Chien Ling Hwang ,  Jean Wang ,  Chen-Hua Yu

IPC分类号： B24B7/22 ,  B24B57/02

CPC分类号： B24B57/02 ,  B24B37/107 ,  B24B53/017 ,  H01L21/02052

摘要： A chemical mechanical polishing (CMP) device for processing a wafer is provided which includes a plate for supporting the wafer to be processed in a face-up orientation, a polishing head opposing the plate, wherein the polishing head includes a rotatable polishing pad operable to contact the wafer while the polishing pad is rotating, and a slurry coating system providing a slurry to the polishing pad for polishing the wafer.

摘要翻译： 提供了一种用于处理晶片的化学机械抛光（CMP）装置，其包括用于以面朝上的方向支撑待加工的晶片的板，与该板相对的抛光头，其中抛光头包括可旋转的抛光垫， 在抛光垫旋转的同时接触晶片;以及浆料涂覆系统，其向抛光垫提供浆料以抛光晶片。

公开(公告)号：US20120018878A1

公开(公告)日：2012-01-26

申请号：US12843760

申请日：2010-07-26

申请人： Ming-Da Cheng ,  MIng-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

发明人： Ming-Da Cheng ,  MIng-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

IPC分类号： H01L21/288 ,  H01L29/45

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/93 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11416 ,  H01L2224/11422 ,  H01L2224/11424 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/118 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11822 ,  H01L2224/11827 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/132 ,  H01L2224/13211 ,  H01L2224/13339 ,  H01L2224/13562 ,  H01L2224/13584 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/1379 ,  H01L2224/13794 ,  H01L2224/13809 ,  H01L2224/13813 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/13857 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/93 ,  H01L2225/06513 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2224/11 ,  H01L2924/00

摘要： A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

摘要翻译： 形成器件的方法包括提供衬底，以及在衬底上形成焊料凸点。 将次要元件引入邻近焊料凸块顶表面的区域。 然后对焊料凸块执行再流程以将次要元件驱动到焊料凸块中。

公开(公告)号：US20110266667A1

公开(公告)日：2011-11-03

申请号：US12769768

申请日：2010-04-29

申请人： Yi-Wen WU ,  Cheng-Chung LIN ,  Chien Ling HWANG ,  Chung-Shi LIU

发明人： Yi-Wen WU ,  Cheng-Chung LIN ,  Chien Ling HWANG ,  Chung-Shi LIU

IPC分类号： H01L23/50

CPC分类号： H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/10145 ,  H01L2224/11002 ,  H01L2224/1112 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13181 ,  H01L2224/13551 ,  H01L2224/13561 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13686 ,  H01L2224/13687 ,  H01L2224/13688 ,  H01L2224/1369 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/00 ,  H01L2224/05552

摘要： A sidewall protection structure is provided for covering at least a portion of a sidewall surface of a bump structure, in which a protection structure on the sidewalls of a Cu pillar and a surface region of an under-bump-metallurgy (UBM) layer is formed of at least one non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.

摘要翻译： 提供了一种侧壁保护结构，用于覆盖凸块结构的侧壁表面的至少一部分，其中形成有Cu柱的侧壁上的保护结构和凸起下 - 冶金（UBM）层的表面区域 至少一个非金属材料层，例如介电材料层，聚合物材料层或其组合。

公开(公告)号：US07966968B2

公开(公告)日：2011-06-28

申请号：US11796201

申请日：2007-04-27

申请人： Cheng Hsun Chan ,  Chien Ling Hwang

发明人： Cheng Hsun Chan ,  Chien Ling Hwang

IPC分类号： B05B13/02 ,  B05C11/02

CPC分类号： H01L21/288 ,  C23C18/1216 ,  C23C18/1628 ,  C23C18/1667 ,  C23C18/1678 ,  H01L21/76873

摘要： An electroless plating apparatus is provided. The electroless plating apparatus includes a wafer holder; a chemical dispensing nozzle over the wafer holder; a conduit connected to the chemical dispensing nozzle; and a radiation source over the wafer holder.

摘要翻译： 提供一种化学镀设备。 化学镀设备包括晶片保持器; 在晶片保持器上方的化学分配喷嘴; 连接到化学分配喷嘴的导管; 以及在晶片保持器上方的辐射源。

公开(公告)号：US20110115077A1

公开(公告)日：2011-05-19

申请号：US12891487

申请日：2010-09-27

申请人： Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14

摘要： An embodiment is a method for forming a semiconductor assembly comprising cleaning a connector comprising copper formed on a substrate, applying cold tin to the connector, applying hot tin to the connector, and spin rinsing and drying the connector.

摘要翻译： 一个实施例是一种用于形成半导体组件的方法，其包括清洁在基底上形成的铜的连接器，向连接器施加冷锡，向连接器施加热锡，并旋转冲洗和干燥连接器。

公开(公告)号：US07905109B2

公开(公告)日：2011-03-15

申请号：US11226721

申请日：2005-09-14

申请人： Chien Ling Hwang ,  Yu-Liang Lin ,  Fu-Kang Tien ,  Jyh-Chemg Sheu

发明人： Chien Ling Hwang ,  Yu-Liang Lin ,  Fu-Kang Tien ,  Jyh-Chemg Sheu

IPC分类号： F25D17/02

CPC分类号： H01L21/67109

摘要： A rapid cooling system for a rapid thermal processing chamber includes a rapid thermal processing chamber having a wafer support for supporting a wafer. A tank having a supply of cooling liquid is provided in fluid communication with the chamber. A pump is provided in fluid communication with the rapid thermal processing chamber and the tank for pumping the cooling liquid from the tank to the chamber and cooling the wafer during the cooling phase of rapid thermal processing.

摘要翻译： 用于快速热处理室的快速冷却系统包括具有用于支撑晶片的晶片支撑件的快速热处理室。 提供具有冷却液供应的罐与腔室流体连通。 提供与快速热处理室和储罐流体连通的泵，用于将冷却液体从罐中泵送到室，并在快速热处理的冷却阶段期间冷却晶片。

公开(公告)号：US08946742B2

公开(公告)日：2015-02-03

申请号：US12897124

申请日：2010-10-04

申请人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

发明人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

IPC分类号： H01L33/00 ,  H01L21/768 ,  H01L21/683 ,  H01L23/48 ,  H01L33/48 ,  H01L33/64 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H01L23/00 ,  H01L33/62

CPC分类号： H01L21/76898 ,  H01L21/3065 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L33/005 ,  H01L33/0054 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L33/644 ,  H01L33/647 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2933/0066 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The substrate with through silicon plugs (or vias) described above removes the need for conductive bumps. The process flow is very simple and cost efficient. The structures described combines the separate TSV, redistribution layer, and conductive bump structures into a single structure. By combining the separate structures, a low resistance electrical connection with high heat dissipation capability is created. In addition, the substrate with through silicon plugs (or vias, or trenches) also allows multiple chips to be packaged together. A through silicon trench can surround the one or more chips to provide protection against copper diffusing to neighboring devices during manufacturing. In addition, multiple chips with similar or different functions can be integrated on the TSV substrate. Through silicon plugs with different patterns can be used under a semiconductor chip(s) to improve heat dissipation and to resolve manufacturing concerns.

摘要翻译： 具有上述通孔硅衬底（或通孔）的基板消除了对导电凸块的需要。 流程非常简单，成本效益高。 所描述的结构将单独的TSV，再分配层和导电凸块结构组合成单个结构。 通过组合单独的结构，产生具有高散热能力的低电阻电连接。 此外，具有通过硅插头（或通孔或沟槽）的基板还允许将多个芯片封装在一起。 通过硅沟槽可围绕一个或多个芯片，以在制造期间提供防止铜扩散到相邻器件的保护。 此外，具有相似或不同功能的多个芯片可以集成在TSV基板上。 通过具有不同图案的硅插头可以在半导体芯片下使用以改善散热并解决制造问题。

公开(公告)号：US08823166B2

公开(公告)日：2014-09-02

申请号：US12871565

申请日：2010-08-30

申请人： Cheng-Chung Lin ,  Chung-Shi Liu ,  Meng-Wei Chou ,  Kuo Cheng Lin ,  Wen-Hsiung Lu ,  Chien Ling Hwang ,  Ying-Jui Huang ,  De-Yuan Lu

发明人： Cheng-Chung Lin ,  Chung-Shi Liu ,  Meng-Wei Chou ,  Kuo Cheng Lin ,  Wen-Hsiung Lu ,  Chien Ling Hwang ,  Ying-Jui Huang ,  De-Yuan Lu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L21/02052 ,  H01L21/32125 ,  H01L21/76873 ,  H01L21/76885 ,  H01L23/488 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2221/1084 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05541 ,  H01L2224/05573 ,  H01L2224/1111 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11614 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/81191 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0541 ,  H01L2924/07025 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/20102 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/207

摘要： Apparatus and methods for providing solder pillar bumps. Pillar bump connections are formed on input/output terminals for integrated circuits by forming a pillar of conductive material using plating of a conductive material over terminals of an integrated circuit. A base portion of the pillar bump has a greater width than an upper portion. A cross-section of the base portion of the pillar bump may make a trapezoidal, rectangular or sloping shape. Solder material may be formed on the top surface of the pillar. The resulting solder pillar bumps form fine pitch package solder connections that are more reliable than those of the prior art.

摘要翻译： 用于提供焊料柱凸块的装置和方法。 通过在集成电路的端子上通过导电材料的电镀形成导电材料的支柱，在集成电路的输入/输出端子上形成支柱凸点连接。 柱状凸块的基部具有比上部更大的宽度。 柱形凸起的基部的横截面可以形成梯形，矩形或倾斜的形状。 焊料可以形成在柱的顶表面上。 所得到的焊料柱凸起形成比现有技术更可靠的细间距封装焊接连接。

公开(公告)号：US20130228951A1

公开(公告)日：2013-09-05

申请号：US13411293

申请日：2012-03-02

申请人： Bor-Ping Jang ,  Yeong-Jyh Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

发明人： Bor-Ping Jang ,  Yeong-Jyh Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC分类号： B29C45/22 ,  B29C45/34

CPC分类号： H01L25/50 ,  B29C45/0046 ,  B29C45/14639 ,  B29C45/34 ,  B29C2045/0027 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

摘要： A mold includes a top portion, and an edge ring having a ring-shape. The edge ring is underlying and connected to edges of the top portion. The edge ring includes air vents. The edge ring further encircles the inner space under the top portion of the mold. A plurality of injection ports is connected to the inner space of the mold. The plurality of injection ports is substantially aligned to a straight line crossing a center of the top portion of the mold. The plurality of injection ports has different sizes.

公开(公告)号：US08507940B2

公开(公告)日：2013-08-13

申请号：US12879584

申请日：2010-09-10

申请人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

发明人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

IPC分类号： H01L33/00

CPC分类号： H01L21/76898 ,  H01L21/3065 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L33/005 ,  H01L33/0054 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L33/644 ,  H01L33/647 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2933/0066 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The package substrates with through silicon plugs (or vias) described above provide lateral and vertical heat dissipation pathways for semiconductor chips that require thermal management. Designs of through silicon plugs (TSPs) with high duty ratios can most effectively provide heat dissipation. TSP designs with patterns of double-sided combs can provide high duty ratios, such as equal to or greater than 50%. Package substrates with high duty ratios are useful for semiconductor chips that generate large amount of heat. An example of such semiconductor chip is a light-emitting diode (LED) chip.

摘要翻译： 具有上述通孔硅封装（或通孔）的封装衬底为需要热管理的半导体芯片提供侧向和垂直散热​​路径。 具有高占空比的通过硅插头（TSP）的设计可以最有效地提供散热。 具有双面梳状图案的TSP设计可以提供等于或大于50％的高占空比。 具有高占空比的封装衬底对于产生大量热量的半导体芯片是有用的。 这种半导体芯片的例子是发光二极管（LED）芯片。