ELECTRICAL REDUNDANCY FOR BONDED STRUCTURES
    2.
    发明公开

    公开(公告)号:US20240136333A1

    公开(公告)日:2024-04-25

    申请号:US18535375

    申请日:2023-12-11

    CPC classification number: H01L25/0657 H01L24/06 H01L24/26 H01L24/93

    Abstract: An element that is configured to bond to another element is disclosed. A first element that can include a first plurality of contact pads on a first surface. The first plurality of contact pads includes a first contact pad and a second contact pad that are spaced apart from one another. The first and second contact pads are electrically connected to one another for redundancy. The first element can be prepared for direct bonding. The first element can be bonded to a second element to form a bonded structure. The second element has a second plurality of contact pads on a second surface. At least one of the second plurality of contact pads is bonded and electrically connected to at least one of the first plurality of contact pads.

    Semiconductor device and method for manufacturing semiconductor device

    公开(公告)号:US11798905B2

    公开(公告)日:2023-10-24

    申请号:US17488053

    申请日:2021-09-28

    Inventor: Takashi Shimada

    Abstract: The semiconductor device according to the present invention comprises; a semiconductor element having one surface with a plurality of electrode pads; an electrode structure including a plurality of metal terminals and a sealing resin. The plurality of metal terminals being disposed in a region along a circumference of the one surface. The sealing resin holding the plurality of metal terminals and being disposed on the one surface of the semiconductor element. The electrode structure includes a first surface opposed to the one surface of the semiconductor element, a second surface positioned in an opposite side of the first surface, and a third surface positioned between the first surface and the second surface. Each of the plurality of metal terminals is exposed from the sealing resin in at least a part of the second surface and at least a part of the third surface.

    Method of manufacturing a semiconductor component
    9.
    发明授权
    Method of manufacturing a semiconductor component 有权
    制造半导体部件的方法

    公开(公告)号:US08802564B2

    公开(公告)日:2014-08-12

    申请号:US13460939

    申请日:2012-05-01

    Abstract: A method of manufacturing a semiconductor component includes the steps of manufacturing of a wafer, applying structures of components on the wafer to form a wafer assembly, applying a metal coating on the wafer, removing the metal coating in non-contact areas of the components, applying surrounds on the edge areas of the components, arranging the wafer on a foil held by a clamping ring, separating the components of the wafer compound carried by the foil from one another, arranging a covering mask on the areas of the separated components carried by the foil which are not to be coated, applying a metal coating on the separate components covered with the mask, removal of the mask, and removal of the components from the foil and further processing the separate components wherein that applying a metal coating on the separate components covered by the mask takes place by means of thermal spraying.

    Abstract translation: 制造半导体部件的方法包括以下步骤:制造晶片,在晶片上施加部件结构以形成晶片组件,在晶片上施加金属涂层,去除部件非接触区域中的金属涂层, 在组件的边缘区域上施加周围环境,将晶片布置在由夹紧环保持的箔上,将由箔承载的晶片化合物的组分彼此分离,将覆盖掩模布置在由 不要被涂覆的箔,在被掩模覆盖的单独部件上施加金属涂层,去除掩模,以及从箔中去除组分并进一步处理单独的部件,其中在单独的部件上施加金属涂层 掩模覆盖的部件通过热喷涂进行。

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