- 专利标题: Semiconductor device and method for manufacturing semiconductor device
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申请号: US17488053申请日: 2021-09-28
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公开(公告)号: US11798905B2公开(公告)日: 2023-10-24
- 发明人: Takashi Shimada
- 申请人: LAPIS Semiconductor Co., Ltd.
- 申请人地址: JP Yokohama
- 专利权人: LAPIS SEMICONDUCTOR CO., LTD.
- 当前专利权人: LAPIS SEMICONDUCTOR CO., LTD.
- 当前专利权人地址: JP Yokohama
- 代理机构: Rabin & Berdo, P.C.
- 优先权: JP 20165426 2020.09.30
- 主分类号: H01L23/00
- IPC分类号: H01L23/00
摘要:
The semiconductor device according to the present invention comprises; a semiconductor element having one surface with a plurality of electrode pads; an electrode structure including a plurality of metal terminals and a sealing resin. The plurality of metal terminals being disposed in a region along a circumference of the one surface. The sealing resin holding the plurality of metal terminals and being disposed on the one surface of the semiconductor element. The electrode structure includes a first surface opposed to the one surface of the semiconductor element, a second surface positioned in an opposite side of the first surface, and a third surface positioned between the first surface and the second surface. Each of the plurality of metal terminals is exposed from the sealing resin in at least a part of the second surface and at least a part of the third surface.
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