公开(公告)号：US11798905B2

公开(公告)日：2023-10-24

申请号：US17488053

申请日：2021-09-28

Applicant: LAPIS Semiconductor Co., Ltd.

Inventor： Takashi Shimada

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/93 ,  H01L2224/022 ,  H01L2224/03001 ,  H01L2224/03602 ,  H01L2224/05005

Abstract: The semiconductor device according to the present invention comprises; a semiconductor element having one surface with a plurality of electrode pads; an electrode structure including a plurality of metal terminals and a sealing resin. The plurality of metal terminals being disposed in a region along a circumference of the one surface. The sealing resin holding the plurality of metal terminals and being disposed on the one surface of the semiconductor element. The electrode structure includes a first surface opposed to the one surface of the semiconductor element, a second surface positioned in an opposite side of the first surface, and a third surface positioned between the first surface and the second surface. Each of the plurality of metal terminals is exposed from the sealing resin in at least a part of the second surface and at least a part of the third surface.