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公开(公告)号：US20240321996A1
公开(公告)日：2024-09-26
申请号：US18604464
申请日：2024-03-13
发明人： Shouhei HIEJIMA
CPC分类号： H01L29/4908 , H01L23/293 , H01L23/3135
摘要： A semiconductor device includes a thin-film metal electrode provided on a first main surface of a support base, a thin-film resin layer covering an edge of the thin-film metal electrode, a thick-film metal body located above the thin-film metal electrode and containing copper, a thick-film resin body covering a lateral surface of the thick-film metal body, and a structure body including at least one of a first film provided on the first main surface and a second film provided on a second main surface. The thick-film metal body, the thin-film metal electrode, and the support base are arranged along a direction of a first axis. Upper surfaces of the thick-film metal body and the thick-film resin body extend along a reference plane intersecting with the first axis. A thermal expansion coefficient of the first film is between those of the thick-film resin body and a semiconductor of the support base.
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公开(公告)号：US12094402B2
公开(公告)日：2024-09-17
申请号：US17442211
申请日：2020-03-30
发明人： Hiroyoshi Ichikura
IPC分类号： G09G3/3208
CPC分类号： G09G3/3208 , G09G2330/021
摘要： A display driving device includes a high voltage operating unit obtaining an operating current according to the application of the high power supply voltage from the first voltage application line; a low voltage operating unit that operates according to an application of a low power supply voltage to control the high voltage operating unit; a recycling circuit that receives the operating current from the high voltage operating unit via a relay coupling line and applies the low power supply voltage to the low voltage operating unit while supplying the received operating current to a reference potential line via the low voltage operating unit; and a current bypass circuit that flows a part of the operating current flowing through the relay coupling line into the reference potential line without supplying the part of the operating current to the recycling circuit according to a voltage increase in the low power supply voltage.
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3.发明公开公开(公告)号：US20240297445A1
公开(公告)日：2024-09-05
申请号：US18665501
申请日：2024-05-15
发明人： Hiroji Akahori
CPC分类号： H01Q21/0087 , H01L23/66 , H01Q1/2283 , H01Q1/243 , H01Q1/48 , H01Q21/0025 , H01Q21/29 , H01L2223/6677 , H01L2224/11
摘要： A semiconductor device includes a semiconductor chip, a first antenna element and a second antenna element. The semiconductor chip includes a communication circuit. The first antenna element includes a line pattern which is electrically connected to the communication circuit and meanderingly reciprocates in a first direction parallel to a first surface of the semiconductor chip. The second antenna element includes a line pattern which is electrically connected to the communication circuit and meanderingly reciprocates in a second direction parallel to a second surface opposite to the first surface of the semiconductor chip.
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4.发明授权公开(公告)号：US12067954B2
公开(公告)日：2024-08-20
申请号：US17622784
申请日：2020-06-17
发明人： Kenichi Shiibayashi
IPC分类号： G09G3/36 , G09G3/3258
CPC分类号： G09G3/3696 , G09G3/3258 , G09G3/3648 , G09G2310/0286 , G09G2310/0291 , G09G2320/0252 , G09G2320/0276 , G09G2320/0626
摘要： A voltage generation unit includes first to k-th amplifiers that individually receiving first to k-th reference voltages having mutually different voltage values, individually amplify these reference voltages with gain 1, and output the reference voltages. The generation unit generates plural gradation voltages by dividing voltages between respective voltages output from the first to k-th amplifiers. A decoder unit selects one gradation voltage corresponding to the luminance level represented by the pixel data piece among the gradation voltages and generates a signal having the one gradation voltage as the drive signal for driving a display device. Each amplifier includes a response-speed increase circuit that includes at least one transistor in which a source and a back gate are connected to an output terminal of the amplifier, a predetermined electric potential is applied to a drain, and the reference voltage received by the amplifier is received at a gate.
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公开(公告)号：US12062347B2
公开(公告)日：2024-08-13
申请号：US17383370
申请日：2021-07-22
发明人： Kenichi Shigeta
CPC分类号： G09G3/3696 , G09G2310/08 , G09G2320/0233 , G09G2320/0252 , G09G2320/041
摘要： A display driver according to the present invention generates a plurality of driving voltages based on a video signal and applies the respective driving voltages to a plurality of source lines of a display panel. The display driver includes an overdrive part and an overdrive control circuit. The overdrive part executes an overdrive processing to increase amplitudes of the driving voltages. The overdrive control circuit detects an internal temperature of the display driver and stops the overdrive processing by the overdrive part when the temperature is higher than a predetermined temperature threshold.
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公开(公告)号：US20240079262A1
公开(公告)日：2024-03-07
申请号：US18507113
申请日：2023-11-13
发明人： Hajime USHIO , Yuta MAKINO , Hirofumi SHIRAGASAWA
IPC分类号： H01L21/683 , H01L21/04 , H01L21/304 , H01L21/67
CPC分类号： H01L21/6838 , H01L21/0445 , H01L21/304 , H01L21/67017
摘要： A support stage includes a base portion, a support portion that is erected at a peripheral edge portion of the base portion and with which one surface of a wafer is to be come into contact, a suction groove that is provided at the support portion and to which a suction force with respect to the one surface is to be given, an ejecting hole that is provided in an inward portion of the base portion and by which a gas is to be ejected toward the one surface, and an exhaust hole that is provided in at least either one of the base portion and the support portion and by which a gas is to be discharged from a space between the base portion, the support portion, and the one surface.
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公开(公告)号：US20240068805A1
公开(公告)日：2024-02-29
申请号：US18237971
申请日：2023-08-25
发明人： ARATA NAGANUMA
IPC分类号： G01B11/27
CPC分类号： G01B11/272
摘要： A detection device including: a laser sensor provided between a supply unit that supplies an inspection object and an inspection unit that inspects the inspection object; and a measurement unit that measures a state of the inspection object by using the laser sensor with respect to the inspection object moving along a transport direction from the supply unit toward the inspection unit.
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公开(公告)号：US11907003B2
公开(公告)日：2024-02-20
申请号：US18156148
申请日：2023-01-18
发明人： Kenjiro Matoba , Kazuhiro Yamashita
IPC分类号： G06F1/04 , H03K19/0185
CPC分类号： G06F1/04 , H03K19/018521
摘要： An output signal generation circuit includes a first pulse generation circuit configured to receive first information and generate a first pulse signal including the first information, the first pulse signal having a first pulse width that is a minimum pulse width of the first pulse signal, a second pulse generation circuit configured to receive second information and the first pulse signal, and generate a second pulse signal in which the second information is superimposed on the first pulse signal, the second pulse signal having a second pulse width smaller than the first pulse width, and an output circuit configured to output the second pulse signal.
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公开(公告)号：US20230411513A1
公开(公告)日：2023-12-21
申请号：US18231377
申请日：2023-08-08
IPC分类号： H01L29/78 , H01L29/40 , H01L21/266 , H01L29/417 , H01L29/66
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/7804 , H01L29/41741 , H01L29/66712 , H01L21/266
摘要： A semiconductor device including: a first semiconductor layer having a first conductive type; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second conductive type that is a conductive type different from the first conductive type; an impurity region of the first conductive type formed at a surface of the second semiconductor layer; first electrodes contacting the impurity region, the second semiconductor layer, and the first semiconductor layer via a first insulating film; and second electrodes contacting the first electrodes via a second insulating film, and contacting the first semiconductor layer via a third insulating film, the second electrodes including PN junctions at borders between upper portions that contact the first semiconductor layer via the third insulating film and lower portions that contact the first semiconductor layer via the third insulating film.
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公开(公告)号：US11798905B2
公开(公告)日：2023-10-24
申请号：US17488053
申请日：2021-09-28
发明人： Takashi Shimada
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , H01L24/03 , H01L24/93 , H01L2224/022 , H01L2224/03001 , H01L2224/03602 , H01L2224/05005
摘要： The semiconductor device according to the present invention comprises; a semiconductor element having one surface with a plurality of electrode pads; an electrode structure including a plurality of metal terminals and a sealing resin. The plurality of metal terminals being disposed in a region along a circumference of the one surface. The sealing resin holding the plurality of metal terminals and being disposed on the one surface of the semiconductor element. The electrode structure includes a first surface opposed to the one surface of the semiconductor element, a second surface positioned in an opposite side of the first surface, and a third surface positioned between the first surface and the second surface. Each of the plurality of metal terminals is exposed from the sealing resin in at least a part of the second surface and at least a part of the third surface.
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