公开(公告)号：US20230411513A1

公开(公告)日：2023-12-21

申请号：US18231377

申请日：2023-08-08

Applicant: LAPIS SEMICONDUCTOR CO., LTD.

Inventor： TOMOMI YAMANOBE ,  YOSHINOBU TAKESHITA ,  KAZUTAKA KODAMA ,  MINAKO ORITU

IPC: H01L29/78 ,  H01L29/40 ,  H01L21/266 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/407 ,  H01L29/7804 ,  H01L29/41741 ,  H01L29/66712 ,  H01L21/266

Abstract: A semiconductor device including: a first semiconductor layer having a first conductive type; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second conductive type that is a conductive type different from the first conductive type; an impurity region of the first conductive type formed at a surface of the second semiconductor layer; first electrodes contacting the impurity region, the second semiconductor layer, and the first semiconductor layer via a first insulating film; and second electrodes contacting the first electrodes via a second insulating film, and contacting the first semiconductor layer via a third insulating film, the second electrodes including PN junctions at borders between upper portions that contact the first semiconductor layer via the third insulating film and lower portions that contact the first semiconductor layer via the third insulating film.

公开(公告)号：US20220302046A1

公开(公告)日：2022-09-22

申请号：US17694863

申请日：2022-03-15

Applicant: LAPIS SEMICONDUCTOR CO., LTD.

Inventor： KIYOFUMI KONDO ,  MAMORU ISHIKIRIYAMA ,  TAKUMI INOUE ,  KAZUTAKA KODAMA ,  TOSHIFUMI KOBE ,  YUZO YAMAMOTO ,  TOSHIYUKI ORITA ,  MAKOTO HIGASHIHIRA

IPC: H01L23/00

Abstract: There is provided a semiconductor device including: a circuit region formed on one surface of a semiconductor substrate; a connection portion disposed at the one surface, the connection portion covering the circuit region, being electrically connected to the circuit region, and being used to connect with an exterior device; an annular wire formed at the one surface so as to surround the circuit region; a first protective film covering the annular wire, the first protective film being formed between the connection portion and a peripheral edge portion of the semiconductor substrate; and a second protective film formed at a predetermined partial region on the connection portion.

公开(公告)号：US20190259873A1

公开(公告)日：2019-08-22

申请号：US16280250

申请日：2019-02-20

Applicant: LAPIS SEMICONDUCTOR CO., LTD.

Inventor： TOMOMI YAMANOBE ,  YOSHINOBU TAKESHITA ,  KAZUTAKA KODAMA ,  MINAKO ORITU

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L21/266

Abstract: A semiconductor device including: a first semiconductor layer having a first conductive type; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second conductive type that is a conductive type different from the first conductive type; an impurity region of the first conductive type formed at a surface of the second semiconductor layer; first electrodes contacting the impurity region, the second semiconductor layer, and the first semiconductor layer via a first insulating film; and second electrodes contacting the first electrodes via a second insulating film, and contacting the first semiconductor layer via a third insulating film, the second electrodes including PN junctions at borders between upper portions that contact the first semiconductor layer via the third insulating film and lower portions that contact the first semiconductor layer via the third insulating film.