公开(公告)号：US20240321996A1

公开(公告)日：2024-09-26

申请号：US18604464

申请日：2024-03-13

申请人： LAPIS Semiconductor Co., Ltd.

发明人： Shouhei HIEJIMA

IPC分类号： H01L29/49 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L29/4908 ,  H01L23/293 ,  H01L23/3135

摘要： A semiconductor device includes a thin-film metal electrode provided on a first main surface of a support base, a thin-film resin layer covering an edge of the thin-film metal electrode, a thick-film metal body located above the thin-film metal electrode and containing copper, a thick-film resin body covering a lateral surface of the thick-film metal body, and a structure body including at least one of a first film provided on the first main surface and a second film provided on a second main surface. The thick-film metal body, the thin-film metal electrode, and the support base are arranged along a direction of a first axis. Upper surfaces of the thick-film metal body and the thick-film resin body extend along a reference plane intersecting with the first axis. A thermal expansion coefficient of the first film is between those of the thick-film resin body and a semiconductor of the support base.