公开(公告)号：US11842975B2

公开(公告)日：2023-12-12

申请号：US16679883

申请日：2019-11-11

申请人： Infineon Technologies AG

发明人： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

IPC分类号： H01L29/43 ,  H01L23/00 ,  H01L29/45 ,  H01L23/495 ,  H01L23/482

CPC分类号： H01L24/32 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L29/43 ,  H01L29/45 ,  H01L2224/0345 ,  H01L2224/03438 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/08503 ,  H01L2224/2745 ,  H01L2224/291 ,  H01L2224/29082 ,  H01L2224/29084 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29184 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/8346 ,  H01L2224/83191 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83815 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0132 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01048 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/1776 ,  H01L2924/17738 ,  H01L2924/17747 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05171 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/01074 ,  H01L2224/05184 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2224/29111 ,  H01L2924/00014 ,  H01L2224/29118 ,  H01L2924/00014 ,  H01L2224/29109 ,  H01L2924/00014 ,  H01L2224/29105 ,  H01L2924/00014 ,  H01L2224/29113 ,  H01L2924/00014 ,  H01L2224/291 ,  H01L2924/01048 ,  H01L2224/83447 ,  H01L2924/00014 ,  H01L2224/8346 ,  H01L2924/00014 ,  H01L2224/83444 ,  H01L2924/00014 ,  H01L2224/83439 ,  H01L2924/00014 ,  H01L2224/83464 ,  H01L2924/00014 ,  H01L2224/83469 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/01023 ,  H01L2224/05655 ,  H01L2924/01015 ,  H01L2224/83455 ,  H01L2924/01023 ,  H01L2224/83455 ,  H01L2924/01015 ,  H01L2224/29139 ,  H01L2924/00014 ,  H01L2224/29144 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/00 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/1305 ,  H01L2924/00

摘要： An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

公开(公告)号：US20180090422A1

公开(公告)日：2018-03-29

申请号：US15438457

申请日：2017-02-21

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Koji ARAKI ,  Shinichi KOUYAMA ,  Kazumi OOTANI

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/29

CPC分类号： H01L23/49548 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/49503 ,  H01L23/49517 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29298 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/33181 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83801 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device comprises a first metal lead frame portion with a chip mounting surface, a second metal lead frame portion, and a semiconductor chip with a first surface facing and attached to the chip mounting surface of the first metal lead frame part and a second surface facing away from the chip mounting surface of the first metal lead frame part. A connector portion is electrical connected to the second metal lead frame portion and is attached to the second surface of the semiconductor chip. The connector portion covers the entirety of a planar area of the semiconductor chip when viewed along a direction orthogonal to second surface of the semiconductor chip.

公开(公告)号：US09875987B2

公开(公告)日：2018-01-23

申请号：US15247393

申请日：2016-08-25

申请人： Freescale Semiconductor, Inc.

发明人： Lakshminarayan Viswanathan ,  Jaynal A. Molla

IPC分类号： H01L23/00 ,  H01L29/16 ,  H01L21/48 ,  H01L29/20 ,  H01L23/66 ,  H01L23/48 ,  H01L21/78 ,  H01L23/31 ,  H01L23/36 ,  H01L23/367 ,  H01L23/482 ,  H01L21/683 ,  H01L23/495 ,  H01L21/56

CPC分类号： H01L24/83 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/741 ,  H01L24/743 ,  H01L24/92 ,  H01L24/94 ,  H01L29/16 ,  H01L29/2003 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/03436 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03505 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/05018 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05551 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/05844 ,  H01L2224/05847 ,  H01L2224/05855 ,  H01L2224/05864 ,  H01L2224/05887 ,  H01L2224/0589 ,  H01L2224/05893 ,  H01L2224/27002 ,  H01L2224/2731 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27436 ,  H01L2224/27438 ,  H01L2224/27505 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29012 ,  H01L2224/29015 ,  H01L2224/29017 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29117 ,  H01L2224/29118 ,  H01L2224/2912 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/2918 ,  H01L2224/29184 ,  H01L2224/2919 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/296 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/741 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/1016 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1421 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/3512 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2924/01015 ,  H01L2924/01048 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01026 ,  H01L2224/03 ,  H01L2224/05099 ,  H01L2924/01006 ,  H01L2924/04642 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2221/68304 ,  H01L21/304 ,  H01L2224/83 ,  H01L2924/0781 ,  H01L2924/00 ,  H01L2224/034 ,  H01L2221/68368 ,  H01L2224/274

摘要： An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a conductive layer underlying the sintered metallic layer, and a conductive substrate underlying the conductive layer.

公开(公告)号：US20170053814A1

公开(公告)日：2017-02-23

申请号：US15340837

申请日：2016-11-01

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Sueann Lim Wei Fen ,  Lee Han Meng@ Eugene Lee ,  Anis Fauzi Bin Abdul Aziz

IPC分类号： H01L21/56 ,  H01L21/48

CPC分类号： H01L21/561 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/563 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/49541 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49052 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/85439 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2224/85 ,  H01L2224/83

摘要： A semiconductor device has a leadframe with a first (401a) and a parallel second surface, and an assembly pad (410) bordered by two opposing sides, which include a plurality of through-holes (420) from the first to the second pad surface. Another pad side includes one or more elongated windows (421) between the pad surfaces. The second pad surface includes a plurality of grooves. The leadframe further has a plurality of leads (430) with opposite elongated sides castellated by indents (431). Layers (440) of bondable metals are restricted to localized areas surrounding bond spots. A semiconductor chip (450) is attached to the pad and wire-bonded (460) to the bond spots. A package (470) encapsulates the chip, wires, pad, and lead portions, and secures the leadframe into the package by filling the through-holes, windows, grooves, and indents.

摘要翻译： 半导体器件具有带有第一（401a）和平行的第二表面的引线框和由两个相对的边界定的组装焊盘（410），其包括从第一焊盘表面到第二焊盘表面的多个通孔（420） 。 另一衬垫侧包括在垫表面之间的一个或多个细长窗（421）。 第二垫表面包括多个槽。 引线框还具有多个引线（430），其具有由凹口（431）铸造的相对的细长边。 可焊接金属层（440）限于粘结点附近的局部区域。 将半导体芯片（450）附接到焊盘并且引线键合（460）到接合点。 封装（470）封装芯片，电线，焊盘和引线部分，并且通过填充通孔，窗口，凹槽和凹口来将引线框固定到封装中。

公开(公告)号：US09515009B2

公开(公告)日：2016-12-06

申请号：US14592011

申请日：2015-01-08

申请人： Texas Instruments Incorporated

发明人： Sueann Lim Wei Fen ,  Lee Han Meng@ Eugene Lee ,  Anis Fauzi Bin Abdul Aziz

IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/561 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/563 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/49541 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49052 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/85439 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2224/85 ,  H01L2224/83

摘要： A semiconductor device has a leadframe with a first (401a) and a parallel second surface, and an assembly pad (410) bordered by two opposing sides, which include a plurality of through-holes (420) from the first to the second pad surface. Another pad side includes one or more elongated windows (421) between the pad surfaces. The second pad surface includes a plurality of grooves. The leadframe further has a plurality of leads (430) with opposite elongated sides castellated by indents (431). Layers (440) of bondable metals are restricted to localized areas surrounding bond spots. A semiconductor chip (450) is attached to the pad and wire-bonded (460) to the bond spots. A package (470) encapsulates the chip, wires, pad, and lead portions, and secures the leadframe into the package by filling the through-holes, windows, grooves, and indents.

摘要翻译： 半导体器件具有带有第一（401a）和平行的第二表面的引线框和由两个相对的边界定的组装焊盘（410），其包括从第一焊盘表面到第二焊盘表面的多个通孔（420） 。 另一衬垫侧包括在垫表面之间的一个或多个细长窗（421）。 第二垫表面包括多个槽。 引线框还具有多个引线（430），其具有由凹口（431）铸造的相对的细长边。 可焊接金属层（440）限于粘结点附近的局部区域。 将半导体芯片（450）附接到焊盘并且引线键合（460）到接合点。 封装（470）封装芯片，电线，焊盘和引线部分，并且通过填充通孔，窗口，凹槽和凹口来将引线框固定到封装中。

公开(公告)号：US09355988B2

公开(公告)日：2016-05-31

申请号：US14669169

申请日：2015-03-26

申请人： ROHM CO., LTD.

发明人： Kenji Fujii ,  Yasumasa Kasuya ,  Mamoru Yamagami ,  Naoki Kinoshita ,  Motoharu Haga

IPC分类号： H01L23/495 ,  H01L23/52 ,  H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L23/433 ,  H01L23/482 ,  H01L23/525

CPC分类号： H01L23/49527 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/4822 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49551 ,  H01L23/49568 ,  H01L23/49572 ,  H01L23/525 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11825 ,  H01L2224/13008 ,  H01L2224/13011 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13024 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/16014 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/17107 ,  H01L2224/29008 ,  H01L2224/29082 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/75981 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/8183 ,  H01L2224/83191 ,  H01L2224/83201 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/8383 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/05042 ,  H01L2924/07025 ,  H01L2924/17724 ,  H01L2924/17747 ,  H01L2924/181 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/01028 ,  H01L2924/0665

摘要： A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.

摘要翻译： 半导体器件具有设置有功能表面的半导体元件，功能电路形成在其上，并且背面面向与功能表面相反的方向，同时还具有支撑半导体元件并与半导体元件电连接的引线 以及覆盖半导体元件和引线的至少一部分的树脂封装。 半导体元件具有形成在功能面上的功能面侧电极，其具有在功能面朝向的方向突出的功能面侧凸起部。 功能面侧电极的功能面侧隆起部通过固态接合而与引线接合。

公开(公告)号：US20150008571A1

公开(公告)日：2015-01-08

申请号：US13937040

申请日：2013-07-08

申请人： Avago Technologies General IP (Singapore) Pte. Ltd

发明人： Adam Gallegos ,  Walter J. Dauksher

IPC分类号： H01L23/00 ,  H01L23/34 ,  H01L23/06

CPC分类号： H01L23/562 ,  H01L23/16 ,  H01L23/3675 ,  H01L23/49816 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/10155 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/16225 ,  H01L2224/26155 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83007 ,  H01L2224/83203 ,  H01L2224/83411 ,  H01L2224/83424 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/8385 ,  H01L2224/92225 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/1659 ,  H01L2924/167 ,  H01L2924/19105 ,  H01L2924/3511 ,  H05K1/141 ,  H05K3/3436 ,  H05K2201/041 ,  H05K2201/068 ,  H05K2201/10378 ,  H05K2201/10734 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A chip package and methods of manufacturing the same are disclosed. In particular, a chip package comprising a ball grid array is disclosed in which the chip package includes a package substrate supporting the ball grid array and in which the chip package further includes a warpage control frame that helps to minimize or mitigate warpage of the chip package.

摘要翻译： 公开了一种芯片封装及其制造方法。 特别地，公开了一种包括球栅阵列的芯片封装，其中芯片封装包括支撑球栅阵列的封装衬底，其中芯片封装还包括翘曲控制框架，其帮助最小化或减轻芯片封装的翘曲 。

公开(公告)号：US08859307B2

公开(公告)日：2014-10-14

申请号：US13601120

申请日：2012-08-31

申请人： Satoshi Mitsugi ,  Toshiyuki Oka ,  Shinya Nunoue ,  Hiroshi Katsuno

发明人： Satoshi Mitsugi ,  Toshiyuki Oka ,  Shinya Nunoue ,  Hiroshi Katsuno

IPC分类号： H01L21/00 ,  B23K26/00 ,  B23K26/20 ,  B23K26/18 ,  H01L23/34 ,  H01L23/00

CPC分类号： H01L23/34 ,  B23K26/0006 ,  B23K26/009 ,  B23K26/18 ,  B23K26/20 ,  B23K2103/56 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29099 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/29184 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/75262 ,  H01L2224/75985 ,  H01L2224/83 ,  H01L2224/83193 ,  H01L2224/83224 ,  H01L2224/83399 ,  H01L2224/834 ,  H01L2224/83449 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/8346 ,  H01L2224/83466 ,  H01L2224/83471 ,  H01L2224/83472 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/00

摘要： According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.

摘要翻译： 根据实施例，半导体器件的制造方法包括放置步骤和接合步骤。 放置步骤经由设置在半导体有源部分和支撑衬底部分之间的接合部分朝向支撑衬底部分面向半导体有源部分。 接合部包括接合层和光吸收层，激光用光吸收层的吸收率高于或等于激光接合层的吸收率。 接合步骤通过用激光照射光吸收层并通过支撑基板部分粘合半导体活性部分和支撑基板部分，并且通过由激光加热的光吸收层进行热传导来熔化接合层。

公开(公告)号：US20140021610A1

公开(公告)日：2014-01-23

申请号：US13555248

申请日：2012-07-23

申请人： Carsten VON KOBLINSKI ,  Michael KNABL ,  Ursula MEYER ,  Francisco Javier SANTOS RODRIGUEZ ,  Alexander BREYMESSER ,  Andre BROCKMEIER

发明人： Carsten VON KOBLINSKI ,  Michael KNABL ,  Ursula MEYER ,  Francisco Javier SANTOS RODRIGUEZ ,  Alexander BREYMESSER ,  Andre BROCKMEIER

IPC分类号： H01L23/48 ,  H01L21/56

CPC分类号： H01L23/44 ,  H01L23/3121 ,  H01L23/473 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/24137 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32013 ,  H01L2224/32057 ,  H01L2224/32237 ,  H01L2224/73267 ,  H01L2224/83411 ,  H01L2224/83418 ,  H01L2224/83424 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/83471 ,  H01L2224/83473 ,  H01L2224/83476 ,  H01L2224/8348 ,  H01L2224/83484 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/13026 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15159 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/82 ,  H01L2224/83

摘要： A chip package is provided, the chip package including: first encapsulation structure; first passivation layer formed over first encapsulation structure and first electrically conductive layer formed over first passivation layer; at least one chip arranged over first electrically conductive layer and passivation layer wherein at least one chip contact pad contacts first electrically conductive layer; at least one cavity formed in first encapsulation structure, wherein at least one cavity exposes a portion of first passivation layer covering at least one chip contact pad; second encapsulation structure disposed over first encapsulation structure and covering at least one cavity, wherein a chamber region over at least one chip contact pad is defined by at least one cavity and second encapsulation structure; wherein second encapsulation structure includes an inlet and outlet connected to chamber region, wherein inlet and outlet control an inflow and outflow of heat dissipating material to and from chamber region.

摘要翻译： 提供芯片封装，芯片封装包括：第一封装结构; 在第一封装结构上形成的第一钝化层和形成在第一钝化层上的第一导电层; 布置在第一导电层和钝化层之上的至少一个芯片，其中至少一个芯片接触焊盘接触第一导电层; 在第一封装结构中形成的至少一个空腔，其中至少一个空腔暴露覆盖至少一个芯片接触焊盘的第一钝化层的一部分; 第二封装结构设置在第一封装结构上并且覆盖至少一个空腔，其中至少一个芯片接触焊盘上的腔室区域由至少一个空腔和第二封装结构限定; 其中第二封装结构包括连接到室区域的入口和出口，其中入口和出口控制散热材料流入和流出室区域。

公开(公告)号：US08314473B2

公开(公告)日：2012-11-20

申请号：US12773552

申请日：2010-05-04

申请人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

发明人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

IPC分类号： H01L21/70

CPC分类号： H01L23/49513 ,  H01L21/6835 ,  H01L22/10 ,  H01L23/28 ,  H01L23/3107 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05551 ,  H01L2224/05578 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/27002 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29018 ,  H01L2224/29028 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/013 ,  H01L2924/01402 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.

摘要翻译： 描述了可用于半导体器件的模具背面的间隔结构及其制造方法。 这些器件包含在衬底前侧具有集成电路的硅衬底和衬底背面上的后金属层。 在后金属层上形成由Cu的Cu构成的间隔结构，并且嵌入到覆盖后金属层和间隔结构的含Sn层中。 间隔结构可以彼此隔离，使得它们不连接，并且还可以被配置为基本上镜像连接到含Sn层的引线框架中的凹陷。 描述其他实施例。