公开(公告)号：US20160233142A1

公开(公告)日：2016-08-11

申请号：US15011805

申请日：2016-02-01

申请人： II-VI INCORPORATED

发明人： Wen-Qing Xu ,  Chao Liu ,  Giovanni Barbarossa ,  Elgin E. Eissler ,  Thomas E. Anderson ,  Charles J. Kraisinger ,  Norbert Lichtenstein

IPC分类号： H01L23/373 ,  H01L23/498

CPC分类号： H01L23/3732 ,  H01L23/3736 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/83 ,  H01L25/0655 ,  H01L33/641 ,  H01L33/642 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/40139 ,  H01L2224/40151 ,  H01L2224/73263 ,  H01L2224/83424 ,  H01L2224/83438 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83463 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/8347 ,  H01L2224/83471 ,  H01L2224/83479 ,  H01L2224/8348 ,  H01L2224/83484 ,  H01L2224/83493 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2924/00014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0781 ,  H01L2924/01014 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2224/37099

摘要： A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P—N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.

摘要翻译： 复合基板包括电绝缘部分，片，层或片段和导电部分，片，层或片段的交替图案的副安装座基板，以及用于支撑电绝缘部分的交替图案和电绝缘部分的电极 导电部分。 具有P-N结的有源器件可以安装在副安装座基板上。 电绝缘部分，片，层或片段可以由金刚石形成，而导电部分，片，层或片段可以由金属或金属合金形成。

公开(公告)号：US20130070428A1

公开(公告)日：2013-03-21

申请号：US13643306

申请日：2011-05-17

申请人： Jarno Kangastupa ,  Tiina Amberla ,  Kazuo Yamada

发明人： Jarno Kangastupa ,  Tiina Amberla ,  Kazuo Yamada

IPC分类号： H05K7/06 ,  B23K26/24 ,  H05K13/04

CPC分类号： H01L24/91 ,  B23K26/0006 ,  B23K26/244 ,  B23K26/50 ,  B23K2103/56 ,  G02F1/1339 ,  G02F1/1345 ,  H01L23/562 ,  H01L24/80 ,  H01L24/83 ,  H01L2224/056 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29171 ,  H01L2224/2918 ,  H01L2224/80001 ,  H01L2224/80224 ,  H01L2224/80359 ,  H01L2224/80488 ,  H01L2224/83193 ,  H01L2224/83224 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83471 ,  H01L2224/8348 ,  H01L2224/9211 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01105 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2924/01014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention concerns a method of fusing and electrically contacting a first insulating substrate (28A) having at least one first conductive layer (29A) thereon with at least one second insulating substrate (28B) having at least one second conductive layer (29B) thereon, the method comprising: stacking the first and second substrates (28A, 28B) such that an interface zone is formed between them, the interface zone comprising an electrical contacting zone where at least one first conductive layers (29A) faces and is at least partially aligned with at least one second conductive layer (29B), and a substrate fusing zone where the insulating substrates (28A, 28B) directly face each other; focusing to the interface zone of the substrates (28A, 28B) through one of the substrates (28A, 28B) a plurality of sequential focused laser pulses from a laser source, the pulse duration, pulse frequency and pulse power of the laser light being chosen to provide local melting the substrate (28A, 28B) materials and the conductive layers (29A, 29B); and moving the laser source and the substrate with respect to each other at a predetermined velocity and path so that a structurally modified zone is formed to the interface zone, the structurally modified zone overlapping with said electrical contacting zone and said substrate fusing zone. The invention provides a convenient way of manufacturing well-sealed joints and electrical contacts for multifunction electronic devices, for example.

摘要翻译： 本发明涉及一种将具有至少一个第一导电层（29A）的第一绝缘衬底（28A）熔合并电接触至少一个在其上具有至少一个第二导电层（29B）的第二绝缘衬底（28B）的方法， 所述方法包括：堆叠所述第一和第二基板（28A，28B），使得在它们之间形成界面区，所述界面区包括电接触区，其中至少一个第一导电层（29A）面对且至少部分对准 具有至少一个第二导电层（29B），以及绝缘基板（28A，28B）直接面对的基板熔合区域; 通过基板（28A，28B）中的一个基板（28A，28B）的界面区域聚焦来自激光源的多个连续聚焦的激光脉冲，选择激光的脉冲持续时间，脉冲频率和脉冲功率 以提供局部熔化基板（28A，28B）材料和导电层（29A，29B）; 并且以预定的速度和路径相对于彼此移动激光源和基板，使得结构上改性的区域形成到界面区域，所述结构改性区域与所述电接触区域和所述基板熔合区域重叠。 本发明提供了例如制造用于多功能电子设备的良好密封接头和电接点的方便方法。

公开(公告)号：US09425156B2

公开(公告)日：2016-08-23

申请号：US14283828

申请日：2014-05-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yoonha Jung ,  Jongkook Kim ,  Bona Baek ,  Heeseok Lee ,  Kyoungsei Choi

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L25/10 ,  H01L23/498

CPC分类号： H01L23/5389 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/552 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/3224 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83424 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83471 ,  H01L2224/8385 ,  H01L2225/0651 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package includes a first plate having a through hole therein, at least one interconnection layer disposed on a first surface of the first plate, and at least one semiconductor chip disposed on the at least one interconnection layer in a space defined by the through hole and electrically connected to the least one interconnection layer. The package further includes a second plate disposed on the at least one semiconductor chip and a second surface of the first plate on a side of the first plate opposite the first surface, and at least one conductive pad disposed on the second surface of the first plate and electrically connected to the at least one interconnection layer.

摘要翻译： 半导体封装包括其中具有通孔的第一板，设置在第一板的第一表面上的至少一个互连层，以及至少一个半导体芯片，该半导体芯片设置在由通孔限定的空间中的至少一个互连层上 并且电连接到所述至少一个互连层。 所述封装还包括设置在所述至少一个半导体芯片上的第二板和所述第一板的与所述第一表面相对的一侧上的所述第一板的第二表面，以及设置在所述第一板的第二表面上的至少一个导电垫 并且电连接到所述至少一个互连层。

公开(公告)号：US06955975B2

公开(公告)日：2005-10-18

申请号：US10433525

申请日：2002-09-05

申请人： Frank Reichenbach ,  Frank Fischer ,  Ralf Hausner ,  Frieder Haag ,  Eckhard Graf ,  Markus Lutz

发明人： Frank Reichenbach ,  Frank Fischer ,  Ralf Hausner ,  Frieder Haag ,  Eckhard Graf ,  Markus Lutz

IPC分类号： B29C65/16 ,  B29C65/60 ,  B81C1/00 ,  H01L21/20 ,  H01L21/58 ,  H01L21/60 ,  H01L21/762 ,  H01L21/30 ,  H01L21/46

CPC分类号： B29C65/1635 ,  B29C65/1612 ,  B29C65/1683 ,  B29C65/608 ,  B29C66/1122 ,  B29C66/12421 ,  B29C66/472 ,  B29C66/53461 ,  B29C66/71 ,  B29C66/712 ,  B29C66/7392 ,  B29K2083/00 ,  B29L2031/756 ,  B81C1/00269 ,  B81C1/00357 ,  B81C2201/019 ,  B81C2203/019 ,  H01L21/2007 ,  H01L21/76251 ,  H01L24/83 ,  H01L2224/80224 ,  H01L2224/80365 ,  H01L2224/80379 ,  H01L2224/804 ,  H01L2224/80488 ,  H01L2224/83224 ,  H01L2224/834 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83466 ,  H01L2224/83471 ,  H01L2224/83487 ,  H01L2224/8349 ,  H01L2224/83801 ,  H01L2924/01029 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/01014 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for joining a silicon plate to a second plate, a laser beam being directed through the silicon plate at the second plate. In the process, the wavelength of the laser beam is selected in such a way that only a negligibly small amount of energy is absorbed in the silicon plate. A strongly absorbent material is hotmelted by the laser beam's energy and then produces a bond between the silicon plate and the second plate.

摘要翻译： 一种用于将硅板接合到第二板的方法，激光束被引导通过硅板在第二板。 在该过程中，激光束的波长以这样一种方式选择，即在硅板中仅吸收可忽略的少量能量。 强吸收性材料被激光束的能量热熔化，然后在硅板和第二板之间产生粘结。

公开(公告)号：US20160329285A1

公开(公告)日：2016-11-10

申请号：US15215227

申请日：2016-07-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yoonha JUNG ,  Jongkook KIM ,  Bona BAEK ,  Heeseok LEE ,  Kyoungsei CHOI

IPC分类号： H01L23/538 ,  H01L23/00 ,  H01L25/10 ,  H01L23/31 ,  H01L23/552

CPC分类号： H01L23/5389 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/552 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/3224 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83424 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83471 ,  H01L2224/8385 ,  H01L2225/0651 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package includes a first plate having a through hole therein, at least one interconnection layer disposed on a first surface of the first plate, and at least one semiconductor chip disposed on the at least one interconnection layer in a space defined by the through hole and electrically connected to the least one interconnection layer. The package further includes a second plate disposed on the at least one semiconductor chip and a second surface of the first plate on a side of the first plate opposite the first surface, and at least one conductive pad disposed on the second surface of the first plate and electrically connected to the at least one interconnection layer.

公开(公告)号：US20160276300A1

公开(公告)日：2016-09-22

申请号：US15054413

申请日：2016-02-26

申请人： SEIKO EPSON CORPORATION

发明人： Yoshihide MATSUO ,  Masashi YOSHIIKE

IPC分类号： H01L23/00

CPC分类号： H01L24/13 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2002/14241 ,  B41J2002/14491 ,  H01L24/02 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02351 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05555 ,  H01L2224/05655 ,  H01L2224/1161 ,  H01L2224/11618 ,  H01L2224/11622 ,  H01L2224/13008 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/16227 ,  H01L2224/27618 ,  H01L2224/27622 ,  H01L2224/27901 ,  H01L2224/29007 ,  H01L2224/29011 ,  H01L2224/29024 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/301 ,  H01L2224/30145 ,  H01L2224/32237 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81139 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81201 ,  H01L2224/81444 ,  H01L2224/81903 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83455 ,  H01L2224/83466 ,  H01L2224/83471 ,  H01L2224/83856 ,  H01L2224/9211 ,  H01L2224/9212 ,  H01L2924/35121 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/066 ,  H01L2924/0635 ,  H01L2924/07025 ,  H01L2924/0715 ,  H01L2924/0615 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2224/27848 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： An electronic device includes a drive substrate (a pressure chamber substrate and a vibration plate) including a piezoelectric element and electrode wirings related to driving of the piezoelectric element formed thereon, and a sealing plate bonded thereto, the electrode wirings are made of wiring metal containing gold (Au) on the drive substrate through an adhesion layer which is a base layer, and has a removed portion in which a portion of the wiring metal in a region containing a part bonded to a bonding resin is removed and the adhesion layer is exposed.

摘要翻译： 电子装置包括：压电元件的驱动基板（压力室基板和振动板），与形成在其上的压电元件的驱动有关的电极布线;以及密封板，电极布线由布线金属 金（Au）通过作为基底层的粘合层在驱动基板上，并且具有去除部分，其中在包含粘合到接合树脂的部分的区域中的布线金属的一部分被去除并且粘附层暴露 。

公开(公告)号：US09171822B2

公开(公告)日：2015-10-27

申请号：US13643306

申请日：2011-05-17

申请人： Jarno Kangastupa ,  Tiina Amberla ,  Kazuo Yamada

发明人： Jarno Kangastupa ,  Tiina Amberla ,  Kazuo Yamada

IPC分类号： B23K26/24 ,  H01L23/00 ,  B23K26/00 ,  G02F1/1339 ,  G02F1/1345

CPC分类号： H01L24/91 ,  B23K26/0006 ,  B23K26/244 ,  B23K26/50 ,  B23K2103/56 ,  G02F1/1339 ,  G02F1/1345 ,  H01L23/562 ,  H01L24/80 ,  H01L24/83 ,  H01L2224/056 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29171 ,  H01L2224/2918 ,  H01L2224/80001 ,  H01L2224/80224 ,  H01L2224/80359 ,  H01L2224/80488 ,  H01L2224/83193 ,  H01L2224/83224 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83471 ,  H01L2224/8348 ,  H01L2224/9211 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01105 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2924/01014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention concerns a method of fusing and electrically contacting a first insulating substrate (28A) having at least one first conductive layer (29A) thereon with at least one second insulating substrate (28B) having at least one second conductive layer (29B) thereon, the method comprising: stacking the first and second substrates (28A, 28B) such that an interface zone is formed between them, the interface zone comprising an electrical contacting zone where at least one first conductive layers (29A) faces and is at least partially aligned with at least one second conductive layer (29B), and a substrate fusing zone where the insulating substrates (28A, 28B) directly face each other; focusing to the interface zone of the substrates (28A, 28B) through one of the substrates (28A, 28B) a plurality of sequential focused laser pulses from a laser source, the pulse duration, pulse frequency and pulse power of the laser light being chosen to provide local melting the substrate (28A, 28B) materials and the conductive layers (29A, 29B); and moving the laser source and the substrate with respect to each other at a predetermined velocity and path so that a structurally modified zone is formed to the interface zone, the structurally modified zone overlapping with said electrical contacting zone and said substrate fusing zone. The invention provides a convenient way of manufacturing well-sealed joints and electrical contacts for multifunction electronic devices, for example.

摘要翻译： 本发明涉及一种将具有至少一个第一导电层（29A）的第一绝缘衬底（28A）熔合并电接触至少一个在其上具有至少一个第二导电层（29B）的第二绝缘衬底（28B）的方法， 所述方法包括：堆叠所述第一和第二基板（28A，28B），使得在它们之间形成界面区，所述界面区包括电接触区，其中至少一个第一导电层（29A）面对且至少部分对准 具有至少一个第二导电层（29B），以及绝缘基板（28A，28B）直接面对的基板熔合区域; 通过基板（28A，28B）中的一个基板（28A，28B）的界面区域聚焦来自激光源的多个连续聚焦的激光脉冲，选择激光的脉冲持续时间，脉冲频率和脉冲功率 以提供局部熔化基板（28A，28B）材料和导电层（29A，29B）; 并且以预定的速度和路径相对于彼此移动激光源和基板，使得结构上改性的区域形成到界面区域，所述结构改性区域与所述电接触区域和所述基板熔合区域重叠。 本发明提供了例如制造用于多功能电子设备的良好密封接头和电接点的方便方法。

公开(公告)号：US08841768B2

公开(公告)日：2014-09-23

申请号：US13555248

申请日：2012-07-23

申请人： Carsten Von Koblinski ,  Michael Knabl ,  Ursula Meyer ,  Francisco Javier Santos Rodriguez ,  Alexander Breymesser ,  Andre Brockmeier

发明人： Carsten Von Koblinski ,  Michael Knabl ,  Ursula Meyer ,  Francisco Javier Santos Rodriguez ,  Alexander Breymesser ,  Andre Brockmeier

IPC分类号： H01L23/48

CPC分类号： H01L23/44 ,  H01L23/3121 ,  H01L23/473 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/24137 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32013 ,  H01L2224/32057 ,  H01L2224/32237 ,  H01L2224/73267 ,  H01L2224/83411 ,  H01L2224/83418 ,  H01L2224/83424 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/83471 ,  H01L2224/83473 ,  H01L2224/83476 ,  H01L2224/8348 ,  H01L2224/83484 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/13026 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15159 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/82 ,  H01L2224/83

摘要： A chip package is provided, the chip package including: first encapsulation structure; first passivation layer formed over first encapsulation structure and first electrically conductive layer formed over first passivation layer; at least one chip arranged over first electrically conductive layer and passivation layer wherein at least one chip contact pad contacts first electrically conductive layer; at least one cavity formed in first encapsulation structure, wherein at least one cavity exposes a portion of first passivation layer covering at least one chip contact pad; second encapsulation structure disposed over first encapsulation structure and covering at least one cavity, wherein a chamber region over at least one chip contact pad is defined by at least one cavity and second encapsulation structure; wherein second encapsulation structure includes an inlet and outlet connected to chamber region, wherein inlet and outlet control an inflow and outflow of heat dissipating material to and from chamber region.

摘要翻译： 提供芯片封装，芯片封装包括：第一封装结构; 在第一封装结构上形成的第一钝化层和形成在第一钝化层上的第一导电层; 布置在第一导电层和钝化层之上的至少一个芯片，其中至少一个芯片接触焊盘接触第一导电层; 在第一封装结构中形成的至少一个空腔，其中至少一个空腔暴露覆盖至少一个芯片接触焊盘的第一钝化层的一部分; 第二封装结构设置在第一封装结构上并且覆盖至少一个空腔，其中至少一个芯片接触焊盘上的腔室区域由至少一个空腔和第二封装结构限定; 其中第二封装结构包括连接到室区域的入口和出口，其中入口和出口控制散热材料流入和流出室区域。

公开(公告)号：US20180190869A1

公开(公告)日：2018-07-05

申请号：US15740410

申请日：2016-07-01

申请人： LG INNOTEK CO., LTD.

发明人： Shuhei MATSUDA

IPC分类号： H01L33/36 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L23/00

CPC分类号： H01L33/36 ,  H01L24/16 ,  H01L24/42 ,  H01L24/48 ,  H01L25/167 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L33/647 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48108 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/83411 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/83471 ,  H01L2224/83481 ,  H01L2224/85411 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/85466 ,  H01L2224/85469 ,  H01L2224/85471 ,  H01L2224/85481 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2224/45099

摘要： A light emitting device disclosed in an embodiment includes: a light emitting chip including a plurality of semiconductor layers and first and second electrodes under the plurality of semiconductor layers; a first lead frame disposed under a first electrode of the light emitting chip; a second lead frame disposed under a second electrode of the light emitting chip; a protective chip disposed between the first and second lead frames and electrically connected to the first and second electrodes; and a reflective member disposed on a periphery of the light emitting chip and the first and second lead frames.

公开(公告)号：US08859307B2

公开(公告)日：2014-10-14

申请号：US13601120

申请日：2012-08-31

申请人： Satoshi Mitsugi ,  Toshiyuki Oka ,  Shinya Nunoue ,  Hiroshi Katsuno

发明人： Satoshi Mitsugi ,  Toshiyuki Oka ,  Shinya Nunoue ,  Hiroshi Katsuno

IPC分类号： H01L21/00 ,  B23K26/00 ,  B23K26/20 ,  B23K26/18 ,  H01L23/34 ,  H01L23/00

CPC分类号： H01L23/34 ,  B23K26/0006 ,  B23K26/009 ,  B23K26/18 ,  B23K26/20 ,  B23K2103/56 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29099 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/29184 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/75262 ,  H01L2224/75985 ,  H01L2224/83 ,  H01L2224/83193 ,  H01L2224/83224 ,  H01L2224/83399 ,  H01L2224/834 ,  H01L2224/83449 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/8346 ,  H01L2224/83466 ,  H01L2224/83471 ,  H01L2224/83472 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/00

摘要： According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.

摘要翻译： 根据实施例，半导体器件的制造方法包括放置步骤和接合步骤。 放置步骤经由设置在半导体有源部分和支撑衬底部分之间的接合部分朝向支撑衬底部分面向半导体有源部分。 接合部包括接合层和光吸收层，激光用光吸收层的吸收率高于或等于激光接合层的吸收率。 接合步骤通过用激光照射光吸收层并通过支撑基板部分粘合半导体活性部分和支撑基板部分，并且通过由激光加热的光吸收层进行热传导来熔化接合层。