STACKED SEMICONDUCTOR SYSTEM HAVING INTERPOSER OF HALF-ETCHED AND MOLDED SHEET METAL

    公开(公告)号:US20200091111A1

    公开(公告)日:2020-03-19

    申请号:US16688905

    申请日:2019-11-19

    Abstract: A semiconductor system (900) has a flat interposer (510) with a first surface (401a) in a first plane, a second surface (401b) in a parallel second plane, and a uniform first height (401) between the surfaces; the interposer is patterned in metallic zones separated by gaps (412, 415), the zones include metal of the first height and metal of a second height (402) smaller than the first height; an insulating material fills the gaps and the zone differences between the first and the second heights. Semiconductor chips of a first (610) and a second (611) set have first terminals attached to metallic zones of the first interposer surface while the chips of the second set have their second terminals facing away from the interposer. A first leadframe (700) is attached to the second terminals of the second set chips, and a second leadframe (800) is attached to respective metallic zones of the second interposer surface.

    Stacked semiconductor system having interposer of half-etched and molded sheet metal

    公开(公告)号:US10720406B2

    公开(公告)日:2020-07-21

    申请号:US16688905

    申请日:2019-11-19

    Abstract: A semiconductor system (900) has a flat interposer (510) with a first surface (401a) in a first plane, a second surface (401b) in a parallel second plane, and a uniform first height (401) between the surfaces; the interposer is patterned in metallic zones separated by gaps (412, 415), the zones include metal of the first height and metal of a second height (402) smaller than the first height; an insulating material fills the gaps and the zone differences between the first and the second heights. Semiconductor chips of a first (610) and a second (611) set have first terminals attached to metallic zones of the first interposer surface while the chips of the second set have their second terminals facing away from the interposer. A first leadframe (700) is attached to the second terminals of the second set chips, and a second leadframe (800) is attached to respective metallic zones of the second interposer surface.

    Multilevel Leadframe
    10.
    发明申请
    Multilevel Leadframe 审中-公开
    多层次引线框架

    公开(公告)号:US20160240390A1

    公开(公告)日:2016-08-18

    申请号:US15138298

    申请日:2016-04-26

    Abstract: A method for forming a multilevel leadframe for an integrated circuit is provided. A conductive sheet is etched from one side to form a thinner region within a frame region for leads lines and bond pads. The conductive sheet is etched to form a plurality of bond pads in a first level of the thinner region arranged in at least a first row and a second row. Each bond pad has a pad width and is separated from an adjacent bond pad by a bond pad clearance distance. The conductive sheet is etched from an opposite side to form a plurality of lead lines in a second level of the thinner region having a line width and is separated from an adjacent lead line by at least a lead line clearance distance. Each bond pad of the second plurality of bond pads is connected to one of the plurality of lead lines on the second level that is routed between adjacent bond pads in the first row, so that the lead lines are routed on a different level from the bond pads.

    Abstract translation: 提供一种用于形成用于集成电路的多电平引线框架的方法。 从一侧蚀刻导电片,以在用于引线和接合焊盘的框架区域内形成更薄的区域。 蚀刻导电片以在布置在至少第一行和第二行中的较薄区域的第一级中形成多个接合焊盘。 每个接合焊盘具有焊盘宽度,并且通过接合焊盘间隙距离与相邻接合焊盘分离。 导电片从相对侧蚀刻,以在具有线宽的较薄区域的第二级中形成多条引线,并且与相邻引线相隔至少一条引线间隙距离。 第二多个接合焊盘中的每个接合焊盘连接到第二级上的多条引线之一,该引线在第一行中的相邻接合焊盘之间布线,使得引线在与焊接不同的层级上布线 垫

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