-
11.Post passivation structure for a semiconductor device and packaging process for same 有权
Title translation: 用于半导体器件的钝化结构及其封装工艺公开(公告)号:US08558383B2
公开(公告)日:2013-10-15
申请号:US12264271
申请日:2008-11-04
Applicant: Mou-Shiung Lin , Chien-Kang Chou , Ke-Hung Chen
Inventor: Mou-Shiung Lin , Chien-Kang Chou , Ke-Hung Chen
CPC classification number: H01L23/5227 , H01L21/2885 , H01L21/563 , H01L21/76801 , H01L21/76885 , H01L23/3114 , H01L23/5223 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05173 , H01L2224/05176 , H01L2224/05183 , H01L2224/05548 , H01L2224/05571 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05669 , H01L2224/1147 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/16 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45183 , H01L2224/48091 , H01L2224/48463 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48669 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/83101 , H01L2224/83192 , H01L2924/00011 , H01L2924/00014 , H01L2924/0002 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2224/48869 , H01L2224/83851 , H01L2224/05552 , H01L2224/05599
Abstract: A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.
Abstract translation: 后钝化重路由支持结构包括钝化层上方相对薄的支撑层以支撑RDL,以及用于从RDL延伸并作为接触结构终止于厚支撑层表面的细间距互连的相对较厚的支撑层,用于 下一级包装结构。 在限定接触结构之前,将厚支撑层平坦化。 可以在形成导电柱之后形成厚的支撑层,或者在形成在厚支撑层中的通孔中形成导电柱之前形成厚的支撑层。 可以在厚支撑层之上设置封装层,在限定接触结构之前该顶表面被平坦化。 封装层和另外的支撑层可以是相同的层。
-
公开(公告)号:US07582556B2
公开(公告)日:2009-09-01
申请号:US11426317
申请日:2006-06-26
Applicant: Mou-Shiung Lin , Chien-Kang Chou , Ke-Hung Chen
Inventor: Mou-Shiung Lin , Chien-Kang Chou , Ke-Hung Chen
IPC: H01L21/4763
CPC classification number: H01L24/12 , H01L21/76801 , H01L23/3192 , H01L23/5227 , H01L23/53295 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05669 , H01L2224/11 , H01L2224/1147 , H01L2224/13 , H01L2224/13022 , H01L2224/13099 , H01L2224/16227 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45183 , H01L2224/48091 , H01L2224/48463 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/73204 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/351 , H01L2224/48824 , H01L2924/00 , H01L2224/48869 , H01L2224/05599
Abstract: A circuit structure includes a semiconductor substrate, first and second metallic posts over the semiconductor substrate, an insulating layer over the semiconductor substrate and covering the first and second metallic posts, first and second bumps over the first and second metallic posts or over the insulating layer. The first and second metallic posts have a height of between 20 and 300 microns, with the ratio of the maximum horizontal dimension thereof to the height thereof being less than 4. The distance between the center of the first bump and the center of the second bump is between 10 and 250 microns.
Abstract translation: 电路结构包括半导体衬底,半导体衬底上的第一和第二金属柱,半导体衬底上的绝缘层,并覆盖第一和第二金属柱,第一和第二金属柱上的第一和第二凸块或绝缘层 。 第一和第二金属柱的高度为20至300微米,其最大水平尺寸与其高度之比小于4.第一凸起的中心与第二凸起的中心之间的距离 在10和250微米之间。
-
13.ELECTRICAL CONTACT STRUCTURES FORMED BY CONFIGURING A FLEXIBLE WIRE TO HAVE A SPRINGABLE SHAPE AND OVERCOATING THE WIRE WITH AT LEAST ONE LAYER OF A RESILIENT CONDUCTIVE MATERIAL, METHODS OF MOUNTING THE CONTACT STRUCTURES TO ELECTRONIC COMPONENTS, AND APPLICATIONS FOR EMPLOYING THE CONTACT STRUCTURES 失效
Title translation: 电气接触结构通过配置柔性线形成具有可弹性形状并在至少一层耐用导电材料上覆盖电线,将接触结构安装到电子部件上的方法以及用于接触结构的应用公开(公告)号:US06835898B2
公开(公告)日:2004-12-28
申请号:US09746960
申请日:2000-12-21
Applicant: Benjamin N. Eldridge , Gary W. Grube , Igor Y. Khandros , Gaetan L. Mathieu
Inventor: Benjamin N. Eldridge , Gary W. Grube , Igor Y. Khandros , Gaetan L. Mathieu
IPC: H01R1204
CPC classification number: H05K7/1069 , B23K20/004 , B23K2101/40 , C23C18/31 , C23C18/32 , C23C18/38 , C25D5/08 , C25D5/22 , C25D21/02 , G01R1/0483 , G01R1/06711 , G01R1/07314 , G01R1/07342 , G01R1/07357 , G01R1/07378 , G01R31/2884 , G01R31/2886 , H01L21/4853 , H01L21/4889 , H01L21/563 , H01L21/6715 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L22/20 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/72 , H01L24/78 , H01L24/81 , H01L24/85 , H01L25/0652 , H01L25/16 , H01L2224/05568 , H01L2224/05571 , H01L2224/05572 , H01L2224/05573 , H01L2224/1134 , H01L2224/13082 , H01L2224/13099 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13647 , H01L2224/13655 , H01L2224/16145 , H01L2224/45015 , H01L2224/45109 , H01L2224/45111 , H01L2224/45116 , H01L2224/4512 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45163 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48599 , H01L2224/49109 , H01L2224/73203 , H01L2224/78301 , H01L2224/81801 , H01L2224/85043 , H01L2224/85045 , H01L2224/851 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2225/0651 , H01L2225/06527 , H01L2225/06555 , H01L2225/06572 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01039 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15312 , H01L2924/1532 , H01L2924/16195 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/20751 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01R12/52 , H05K1/141 , H05K3/20 , H05K3/308 , H05K3/326 , H05K3/3421 , H05K3/3426 , H05K3/368 , H05K3/4015 , H05K3/4092 , H05K2201/0397 , H05K2201/068 , H05K2201/1031 , H05K2201/10318 , H05K2201/10378 , H05K2201/10719 , H05K2201/10734 , H05K2201/10757 , H05K2201/10878 , H05K2201/10909 , H05K2201/10946 , Y02P70/611 , Y02P70/613 , Y10T29/49147 , Y10T29/49149 , Y10T29/49174 , Y10T29/49204 , Y10T29/49208 , Y10T29/49213 , H01L2924/00 , H01L2224/48 , H01L2924/00012 , H01L2924/20752 , H01L2924/20756 , H01L2924/20757 , H01L2924/00015 , H01L2924/2075 , H01L2924/01204 , H01L2924/013 , H01L2924/01004 , H01L2924/01048
Abstract: Contact structures exhibiting resilience or compliance for a variety of electronic components are formed by bonding a free end of a wire to a substrate, configuring the wire into a wire stem having a springable shape, severing the wire stem, and overcoating the wire stem with at least one layer of a material chosen primarily for its structural (resiliency, compliance) characteristics.
Abstract translation: 通过将线的自由端接合到基底上,形成具有弹性或线性的接触结构,将线构成为具有弹性形状的线杆,切断线杆,以及在线杆上涂覆线杆 最少一层材料主要用于其结构(弹性,柔度)特性。
-
14.Method for manufacturing raised electrical contact pattern of controlled geometry 失效
Title translation: 制造受控几何形状的凸起电接触图案的方法公开(公告)号:US06538214B2
公开(公告)日:2003-03-25
申请号:US09848854
申请日:2001-05-04
Applicant: Igor Y. Khandros
Inventor: Igor Y. Khandros
IPC: H05K702
CPC classification number: H05K7/1069 , B23K1/0016 , B23K2101/40 , C23C18/161 , C25D7/12 , G01R1/0466 , G01R1/06711 , G01R1/06761 , G01R1/07307 , G01R3/00 , G01R31/2884 , G01R31/2886 , H01L21/4853 , H01L21/563 , H01L21/6715 , H01L21/76897 , H01L22/20 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/72 , H01L24/81 , H01L25/0652 , H01L25/16 , H01L2224/10126 , H01L2224/10145 , H01L2224/1134 , H01L2224/13099 , H01L2224/13111 , H01L2224/32225 , H01L2224/45015 , H01L2224/45109 , H01L2224/45111 , H01L2224/45116 , H01L2224/45117 , H01L2224/4512 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45163 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/4554 , H01L2224/4556 , H01L2224/456 , H01L2224/4809 , H01L2224/48091 , H01L2224/4813 , H01L2224/48227 , H01L2224/48465 , H01L2224/49109 , H01L2224/73203 , H01L2224/73265 , H01L2224/78301 , H01L2224/81205 , H01L2224/81801 , H01L2224/85043 , H01L2224/85045 , H01L2224/85201 , H01L2224/85205 , H01L2924/00013 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/0106 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15153 , H01L2924/1517 , H01L2924/15312 , H01L2924/1532 , H01L2924/15787 , H01L2924/16152 , H01L2924/16195 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01R12/52 , H05K1/141 , H05K3/308 , H05K3/326 , H05K3/3421 , H05K3/3426 , H05K3/368 , H05K3/4015 , H05K3/4092 , H05K2201/0397 , H05K2201/068 , H05K2201/1031 , H05K2201/10318 , H05K2201/10378 , H05K2201/10719 , H05K2201/10734 , H05K2201/10757 , H05K2201/10878 , H05K2201/10909 , H05K2201/10946 , Y02P70/611 , Y02P70/613 , Y10T29/49144 , Y10T29/49147 , Y10T29/49149 , Y10T29/49151 , Y10T29/49155 , Y10T29/49174 , Y10T29/49179 , Y10T29/49204 , Y10T29/49222 , Y10T29/49224 , Y10T29/49609 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/29099 , H01L2924/00015 , H01L2924/2075 , H01L2924/0102
Abstract: An interposer includes a substrate having opposing surfaces. Conductive terminals are disposed on both surfaces, and conductive terminals on one surface are electrically connected to conductive terminals on the opposing surface. Elongate, springable, conducive interconnect elements are fixed to conductive terminals on both surfaces.
Abstract translation: 插入器包括具有相对表面的基板。 导电端子设置在两个表面上,一个表面上的导电端子电连接到相对表面上的导电端子。 细长的,弹性的,有利的互连元件固定在两个表面的导电端子上。
-
15.Method of manufacturing electrical contacts, using a sacrificial member 失效
Title translation: 使用牺牲部件制造电触点的方法公开(公告)号:US5476211A
公开(公告)日:1995-12-19
申请号:US152812
申请日:1993-11-16
Applicant: Igor Y. Khandros
Inventor: Igor Y. Khandros
IPC: B23K1/00 , C23C18/16 , C25D7/12 , G01R1/04 , G01R1/067 , G01R1/073 , G01R3/00 , G01R31/28 , H01L21/00 , H01L21/48 , H01L21/56 , H01L21/60 , H01L21/66 , H01L23/48 , H01L23/485 , H01L23/49 , H01L23/498 , H01L25/065 , H01L25/16 , H05K1/14 , H05K3/30 , H05K3/32 , H05K3/34 , H05K3/36 , H05K3/40 , H05K7/10 , B23K31/02 , B23K101/38
CPC classification number: H05K7/1069 , B23K1/0016 , C23C18/161 , C25D7/12 , G01R1/0466 , G01R31/2884 , H01L21/4853 , H01L21/563 , H01L21/6715 , H01L22/20 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/72 , H01L24/81 , H01L25/0652 , H01L25/16 , H05K3/308 , H05K3/326 , H05K3/3426 , H05K3/4015 , B23K2201/40 , G01R1/06711 , G01R1/06761 , G01R1/07307 , G01R3/00 , G01R31/2886 , H01L21/76897 , H01L2224/10126 , H01L2224/10145 , H01L2224/1134 , H01L2224/13099 , H01L2224/13111 , H01L2224/32225 , H01L2224/45015 , H01L2224/45109 , H01L2224/45111 , H01L2224/45116 , H01L2224/45117 , H01L2224/4512 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45163 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/4554 , H01L2224/4556 , H01L2224/456 , H01L2224/4809 , H01L2224/48091 , H01L2224/4813 , H01L2224/48227 , H01L2224/48465 , H01L2224/49109 , H01L2224/73203 , H01L2224/73265 , H01L2224/78301 , H01L2224/81205 , H01L2224/81801 , H01L2224/85043 , H01L2224/85045 , H01L2224/85201 , H01L2224/85205 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/0106 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15153 , H01L2924/1517 , H01L2924/15312 , H01L2924/1532 , H01L2924/15787 , H01L2924/16152 , H01L2924/16195 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01R12/52 , H05K1/141 , H05K2201/0397 , H05K2201/068 , H05K2201/1031 , H05K2201/10318 , H05K2201/10378 , H05K2201/10719 , H05K2201/10734 , H05K2201/10757 , H05K2201/10878 , H05K2201/10909 , H05K2201/10946 , H05K3/3421 , H05K3/368 , H05K3/4092 , Y02P70/611 , Y02P70/613 , Y10T29/49144 , Y10T29/49147 , Y10T29/49149 , Y10T29/49151 , Y10T29/49155 , Y10T29/49174 , Y10T29/49179 , Y10T29/49204 , Y10T29/49222 , Y10T29/49224 , Y10T29/49609
Abstract: A method for manufacturing raised contacts on the surface of an electronic component includes bonding one end of a wire to an area, such as a terminal, of the electronic component, and shaping the wire into a wire stem configuration (including straight, bent two-dimensionally, bent three-dimensionally). A coating, having one or more layers, is deposited on the wire stem to (i) impart resilient mechanical characteristics to the shaped wire stem and (ii) more securely attach ("anchor") the wire stem to the terminal. Gold is one of several materials described that may be selected for the wire stem. A variety of materials for the coating, and their mechanical properties, are described. The wire stems may be shaped as loops, for example originating and terminating on the same terminal of the electronic component, and overcoated with solder. The use of a barrier layer to prevent unwanted reactions between the wire stem and its environment (e.g., with a solder overcoat) is described. Bonding a second end of the wire to a sacrificial member, then removing the sacrificial member, is described. A plurality of wire stems may be formed on the surface of the electronic component, from different levels thereon, and may be severed so that their tips are coplanar with one another. Many wire stems can be mounted, for example in an array pattern, to one or to both sides of electronic components including semiconductor dies and wafers, plastic and ceramic semiconductor packages, and the like.
Abstract translation: 一种用于在电子部件的表面上制造凸起接触的方法包括将电线的一端接合到电子部件的诸如端子的区域,并将线成形为线杆构造(包括直的, 尺寸,三维弯曲)。 具有一个或多个层的涂层沉积在线杆上,以(i)赋予成形线杆弹性机械特性,和(ii)将线杆更牢固地附接(“锚定”)到终端。 金是描述的几种材料之一,可以选择线棒。 描述了用于涂层的各种材料及其机械性能。 线杆可以形成为环,例如起始和终止在电子部件的相同端子上,并用焊料覆盖。 描述了使用阻挡层来防止线杆与其环境之间的不期望的反应(例如,使用焊料外涂层)。 将导线的第二端接合到牺牲部件上,然后移除牺牲部件。 多个线杆可以从电子部件的表面上形成在其上的不同层面上,并且可以被切断,使得它们的尖端彼此共面。 许多线杆可以例如以阵列图形安装到包括半导体管芯和晶片的电子部件的一侧或两侧,塑料和陶瓷半导体封装等。
-
公开(公告)号:US09666546B1
公开(公告)日:2017-05-30
申请号:US15141571
申请日:2016-04-28
Applicant: Infineon Technologies AG
Inventor: Manfred Schneegans , Bernhard Weidgans , Franziska Haering
IPC: H01L21/4763 , H01L23/00 , H01L21/027 , H01L23/31 , H01L21/768
CPC classification number: H01L24/06 , H01L21/0273 , H01L21/76864 , H01L21/76865 , H01L23/3157 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/03462 , H01L2224/05087 , H01L2224/05093 , H01L2224/05098 , H01L2224/05147 , H01L2224/0603 , H01L2224/065 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45157 , H01L2224/45166 , H01L2224/45169 , H01L2224/45176 , H01L2224/45181 , H01L2224/45184 , H01L2224/48091 , H01L2224/48463 , H01L2224/4847 , H01L2224/48484 , H01L2224/49111 , H01L2224/49175 , H01L2224/85205 , H01L2224/85207 , H01L2924/1306 , H01L2924/35121 , H01L2924/00014
Abstract: A method for fabricating a semiconductor device includes forming a conductive liner over a first landing pad in a first region and over a second landing pad in a second region. The method further includes depositing a first conductive material within first openings within a resist layer formed over the conductive liner. The first conductive material overfills to form a first pad and a first layer of a second pad. The method further includes depositing a second resist layer over the first conductive material, and patterning the second resist layer to form second openings exposing the first layer of the second pad without exposing the first pad. A second conductive material is deposited over the second layer of the second pad.
-
公开(公告)号:US09543260B2
公开(公告)日:2017-01-10
申请号:US13958276
申请日:2013-08-02
Applicant: Infineon Technologies AG
Inventor: Albert Birner , Helmut Brech , Matthias Zigldrum
IPC: H01L23/538 , H01L23/00
CPC classification number: H01L24/06 , H01L24/03 , H01L24/05 , H01L24/09 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/70 , H01L24/73 , H01L2224/03831 , H01L2224/04042 , H01L2224/04073 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05557 , H01L2224/05578 , H01L2224/05599 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/06133 , H01L2224/06153 , H01L2224/09133 , H01L2224/09153 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45157 , H01L2224/45166 , H01L2224/45169 , H01L2224/45176 , H01L2224/45181 , H01L2224/45184 , H01L2224/48091 , H01L2224/48101 , H01L2224/48153 , H01L2224/48247 , H01L2224/48453 , H01L2224/48463 , H01L2224/48465 , H01L2224/4847 , H01L2224/49111 , H01L2224/49175 , H01L2224/73221 , H01L2224/73271 , H01L2224/85181 , H01L2224/85205 , H01L2224/85207 , H01L2224/85399 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01079 , H01L2924/053 , H01L2924/10272 , H01L2924/1033 , H01L2924/12031 , H01L2924/12032 , H01L2924/1205 , H01L2924/1301 , H01L2924/1304 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/207 , H01L2924/00012 , H01L2224/37099 , H01L2224/84
Abstract: In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.
Abstract translation: 根据本发明的实施例,半导体器件包括设置在衬底的第一侧的第一接合焊盘。 第一接合焊盘包括第一多个焊盘段。 第一多个焊盘段的至少一个焊盘段与第一多个焊盘段的其余焊盘段电隔离。
-
公开(公告)号:US08884433B2
公开(公告)日:2014-11-11
申请号:US12545880
申请日:2009-08-24
Applicant: Mou-Shiung Lin , Chien-Kang Chou , Ke-Hung Chen
Inventor: Mou-Shiung Lin , Chien-Kang Chou , Ke-Hung Chen
IPC: H01L29/40 , H01L23/532 , H01L23/00 , H01L23/31 , H01L21/768 , H01L23/522
CPC classification number: H01L24/12 , H01L21/76801 , H01L23/3192 , H01L23/5227 , H01L23/53295 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05669 , H01L2224/11 , H01L2224/1147 , H01L2224/13 , H01L2224/13022 , H01L2224/13099 , H01L2224/16227 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45183 , H01L2224/48091 , H01L2224/48463 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/73204 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/351 , H01L2224/48824 , H01L2924/00 , H01L2224/48869 , H01L2224/05599
Abstract: A circuit structure includes a semiconductor substrate, first and second metallic posts over the semiconductor substrate, an insulating layer over the semiconductor substrate and covering the first and second metallic posts, first and second bumps over the first and second metallic posts or over the insulating layer. The first and second metallic posts have a height of between 20 and 300 microns, with the ratio of the maximum horizontal dimension thereof to the height thereof being less than 4. The distance between the center of the first bump and the center of the second bump is between 10 and 250 microns.
Abstract translation: 电路结构包括半导体衬底,半导体衬底上的第一和第二金属柱,半导体衬底上的绝缘层,并覆盖第一和第二金属柱,第一和第二金属柱上的第一和第二凸起或绝缘层 。 第一和第二金属柱的高度为20至300微米,其最大水平尺寸与其高度之比小于4.第一凸起的中心与第二凸起的中心之间的距离 在10和250微米之间。
-
公开(公告)号:US20090309224A1
公开(公告)日:2009-12-17
申请号:US12545880
申请日:2009-08-24
Applicant: Mou-Shiung Lin , Chien-Kang Chou , Ke-Hung Chen
Inventor: Mou-Shiung Lin , Chien-Kang Chou , Ke-Hung Chen
IPC: H01L23/522
CPC classification number: H01L24/12 , H01L21/76801 , H01L23/3192 , H01L23/5227 , H01L23/53295 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05669 , H01L2224/11 , H01L2224/1147 , H01L2224/13 , H01L2224/13022 , H01L2224/13099 , H01L2224/16227 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45183 , H01L2224/48091 , H01L2224/48463 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/73204 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/351 , H01L2224/48824 , H01L2924/00 , H01L2224/48869 , H01L2224/05599
Abstract: A circuit structure includes a semiconductor substrate, first and second metallic posts over the semiconductor substrate, an insulating layer over the semiconductor substrate and covering the first and second metallic posts, first and second bumps over the first and second metallic posts or over the insulating layer. The first and second metallic posts have a height of between 20 and 300 microns, with the ratio of the maximum horizontal dimension thereof to the height thereof being less than 4. The distance between the center of the first bump and the center of the second bump is between 10 and 250 microns.
Abstract translation: 电路结构包括半导体衬底,半导体衬底上的第一和第二金属柱,半导体衬底上的绝缘层,并覆盖第一和第二金属柱,第一和第二金属柱上的第一和第二凸起或绝缘层 。 第一和第二金属柱的高度为20至300微米,其最大水平尺寸与其高度之比小于4.第一凸起的中心与第二凸起的中心之间的距离 在10和250微米之间。
-
公开(公告)号:US07082682B2
公开(公告)日:2006-08-01
申请号:US10938267
申请日:2004-09-10
Applicant: Igor Y. Khandros
Inventor: Igor Y. Khandros
IPC: H01R9/00
CPC classification number: H05K7/1069 , B23K1/0016 , B23K2101/40 , C23C18/161 , C25D7/12 , G01R1/0466 , G01R1/06711 , G01R1/06761 , G01R1/07307 , G01R3/00 , G01R31/2884 , G01R31/2886 , H01L21/4853 , H01L21/563 , H01L21/6715 , H01L21/76897 , H01L22/20 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/72 , H01L24/81 , H01L25/0652 , H01L25/16 , H01L2224/10126 , H01L2224/10145 , H01L2224/1134 , H01L2224/13099 , H01L2224/13111 , H01L2224/32225 , H01L2224/45015 , H01L2224/45109 , H01L2224/45111 , H01L2224/45116 , H01L2224/45117 , H01L2224/4512 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45163 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/4554 , H01L2224/4556 , H01L2224/456 , H01L2224/4809 , H01L2224/48091 , H01L2224/4813 , H01L2224/48227 , H01L2224/48465 , H01L2224/49109 , H01L2224/73203 , H01L2224/73265 , H01L2224/78301 , H01L2224/81205 , H01L2224/81801 , H01L2224/85043 , H01L2224/85045 , H01L2224/85201 , H01L2224/85205 , H01L2924/00013 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/0106 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15153 , H01L2924/1517 , H01L2924/15312 , H01L2924/1532 , H01L2924/15787 , H01L2924/16152 , H01L2924/16195 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01R12/52 , H05K1/141 , H05K3/308 , H05K3/326 , H05K3/3421 , H05K3/3426 , H05K3/368 , H05K3/4015 , H05K3/4092 , H05K2201/0397 , H05K2201/068 , H05K2201/1031 , H05K2201/10318 , H05K2201/10378 , H05K2201/10719 , H05K2201/10734 , H05K2201/10757 , H05K2201/10878 , H05K2201/10909 , H05K2201/10946 , Y02P70/611 , Y02P70/613 , Y10T29/49144 , Y10T29/49147 , Y10T29/49149 , Y10T29/49151 , Y10T29/49155 , Y10T29/49174 , Y10T29/49179 , Y10T29/49204 , Y10T29/49222 , Y10T29/49224 , Y10T29/49609 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/29099 , H01L2924/00015 , H01L2924/2075 , H01L2924/0102
Abstract: Contact structures are formed by building a core structure on a substrate and over coating the core structure with a material that is harder or has a greater yield strength than the material of the core structure. The core structure may be formed by attaching a wire to the substrate and spooling the wire out from a spool. While spooling the wire out, the spool may be moved to impart a desired shape to the wire. The wire is severed from the spool and over coated. As an alternative, the wire is not over coated. The substrate may be an electronic device, such as a semiconductor die.
Abstract translation: 通过在基体上构建芯结构并用与芯结构的材料相比更硬或具有更高屈服强度的材料涂覆芯结构来形成接触结构。 芯结构可以通过将线附接到基底并且将线从线轴缠绕而形成。 在将电线卷绕的同时,可以使线轴移动以向线提供期望的形状。 电线从线轴上断开,并被覆盖。 作为替代方案,导线没有被覆盖。 衬底可以是诸如半导体管芯的电子器件。
-
-
-
-
-
-
-
-
-