SEMICONDUCTOR DEVICE
    5.
    发明公开

    公开(公告)号:US20240266315A1

    公开(公告)日:2024-08-08

    申请号:US18500993

    申请日:2023-11-02

    发明人: Kazuya OKADA

    IPC分类号: H01L23/00 H01L25/07

    摘要: An object is to provide a technique capable of reducing variations in gate-source voltage among a plurality of semiconductor elements. The semiconductor device includes the plurality of semiconductor elements, a metal electrode, and a control wire. Each of the plurality of semiconductor elements has a control electrode configured to control a main current. The main current of the plurality of semiconductor element flows through the metal electrode. The control wire connects each of the control electrodes of the plurality of semiconductor elements in series, and interlinks with a magnetic field generated when the main current flows through the metal electrode.