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公开(公告)号：US20240329111A1
公开(公告)日：2024-10-03
申请号：US18741177
申请日：2024-06-12
申请人： ROHM CO., LTD.
IPC分类号： G01R31/26 , G06F30/367
CPC分类号： G01R31/2601 , G01R31/2603 , G01R31/2621 , G06F30/367
摘要： A method for measuring a current-voltage characteristic (Id-Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id-Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.
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公开(公告)号：US20240055328A1
公开(公告)日：2024-02-15
申请号：US18496036
申请日：2023-10-27
申请人： ROHM CO., LTD.
IPC分类号： H01L23/495 , H01L25/16
CPC分类号： H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L23/49589 , H01L25/16 , H01L23/49513
摘要： Semiconductor device A1 includes: first terminal 201A and second terminal 201B; first switching element 1A including first gate electrode 12A, first source electrode 13A and first drain electrode 14A; and second switching element 1B including second gate electrode 12B, second source electrode 13B and second drain electrode 14B. First switching element 1A and second switching element 1B are connected in series to each other between first terminal 201A and second terminal 201B. Semiconductor device A1 includes first capacitor 3A connected in parallel to first switching element 1A and second switching element 1B between first terminal 201A and second terminal 201B. First switching element 1A and second switching element 1B are aligned in y direction. First capacitor 3A overlaps with at least one of first switching element 1A and second switching element 1B as viewed in z direction. These arrangements serve to suppress surge voltage.
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公开(公告)号：US20150325571A1
公开(公告)日：2015-11-12
申请号：US14804920
申请日：2015-07-21
申请人： ROHM CO., LTD.
发明人： Yuki NAKANO , Hiroyuki SAKAIRI
CPC分类号： H02M7/44 , H01L27/0288 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/435 , H01L29/456 , H01L29/78 , H01L29/7803 , H01L29/7813
摘要： A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.
摘要翻译： 根据本发明的开关装置是用于通过开关电压控制来切换负载的开关装置，并且包括通过对电压进行控制形成电流路径的SiC半导体层，布置成为 与SiC半导体层接触的第二电极，以及由于形成电流路径而与SiC半导体层接触以与第一电极接触的第二电极，而第一电极具有由材料制成的可变电阻部分 当过电流流过电流路径时，其电阻值在规定的高温条件下增加，用于将过电流的电流密度限制在规定值以下。
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公开(公告)号：US20230421073A1
公开(公告)日：2023-12-28
申请号：US18463318
申请日：2023-09-08
申请人： ROHM CO., LTD.
发明人： Yuki NAKANO , Hiroyuki SAKAIRI
IPC分类号： H02M7/44 , H01L29/43 , H01L29/16 , H01L29/78 , H01L27/02 , H01L29/417 , H01L29/10 , H01L29/45 , H01L29/423
CPC分类号： H02M7/44 , H01L29/435 , H01L29/1608 , H01L29/78 , H01L27/0288 , H01L29/41766 , H01L29/7813 , H01L29/1095 , H01L29/456 , H01L29/7803 , H01L29/4236 , H01L29/42368
摘要： A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.
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公开(公告)号：US20230027268A1
公开(公告)日：2023-01-26
申请号：US17959859
申请日：2022-10-04
申请人： ROHM CO., LTD.
发明人： Yuki NAKANO , Hiroyuki SAKAIRI
IPC分类号： H02M7/44 , H01L29/43 , H01L29/16 , H01L29/78 , H01L27/02 , H01L29/417 , H01L29/10 , H01L29/45 , H01L29/423
摘要： A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.
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公开(公告)号：US20190260305A1
公开(公告)日：2019-08-22
申请号：US16397134
申请日：2019-04-29
申请人： ROHM CO., LTD
发明人： Yuki NAKANO , Hiroyuki SAKAIRI
IPC分类号： H02M7/44 , H01L29/423 , H01L29/78 , H01L29/45 , H01L29/10 , H01L29/16 , H01L29/417 , H01L27/02 , H01L29/43
摘要： A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.
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公开(公告)号：US20180188312A1
公开(公告)日：2018-07-05
申请号：US15906233
申请日：2018-02-27
申请人： ROHM CO., LTD.
CPC分类号： G01R31/2601 , G01R31/2603 , G01R31/2621 , G06F17/5036
摘要： A method for measuring a current-voltage characteristic (Id−Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id−Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.
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公开(公告)号：US20240274513A1
公开(公告)日：2024-08-15
申请号：US18645947
申请日：2024-04-25
申请人： Rohm Co., Ltd.
IPC分类号： H01L23/495 , H01L23/00
CPC分类号： H01L23/49575 , H01L23/49503 , H01L23/4952 , H01L23/49562 , H01L24/48 , H01L2224/48245 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/1033 , H01L2924/1067 , H01L2924/13055 , H01L2924/13064 , H01L2924/13091 , H01L2924/30101 , H01L2924/30107
摘要： A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.
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公开(公告)号：US20220320054A1
公开(公告)日：2022-10-06
申请号：US17596060
申请日：2020-06-19
申请人： ROHM CO., LTD.
IPC分类号： H01L25/16 , H01L23/495 , H01L23/00 , H02M1/08 , H02M3/00
摘要： A semiconductor device includes a conductive member including first, second and third conductors mutually spaced, a first semiconductor element having a first obverse surface provided with a first drain electrode, a first source electrode and a first gate electrode, and a second semiconductor element having a second obverse surface provided with a second drain electrode, a second source electrode and a second gate electrode. The first conductor is electrically connected to the first source electrode and the second drain electrode. The second conductor is electrically connected to the second source electrode. As viewed in a first direction crossing the first obverse surface, the second conductor is adjacent to the first conductor in a second direction crossing the first direction. The third conductor is electrically connected to the first drain electrode and is adjacent to the first conductor and the second conductor as viewed in the first direction.
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公开(公告)号：US20200212820A1
公开(公告)日：2020-07-02
申请号：US16811676
申请日：2020-03-06
申请人： ROHM CO., LTD.
发明人： Yuki NAKANO , Hiroyuki SAKAIRI
IPC分类号： H02M7/44 , H01L29/423 , H01L29/78 , H01L29/45 , H01L29/10 , H01L29/417 , H01L27/02 , H01L29/16 , H01L29/43
摘要： A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.
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