公开(公告)号：US20240274513A1

公开(公告)日：2024-08-15

申请号：US18645947

申请日：2024-04-25

申请人： Rohm Co., Ltd.

发明人： Koshun SAITO ,  Hiroyuki SAKAIRI ,  Yasufumi MATSUOKA ,  Kenichi YOSHIMOCHI

IPC分类号： H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49575 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/48 ,  H01L2224/48245 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1067 ,  H01L2924/13055 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/30101 ,  H01L2924/30107

摘要： A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.

公开(公告)号：US20180138134A1

公开(公告)日：2018-05-17

申请号：US15801999

申请日：2017-11-02

申请人： ROHM CO., LTD.

发明人： Kentaro CHIKAMATSU ,  Koshun SAITO ,  Kenichi YOSHIMOCHI

IPC分类号： H01L23/64 ,  H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L23/645 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4951 ,  H01L23/49562 ,  H01L23/49568 ,  H01L29/2003 ,  H01L29/7787 ,  H02M3/155

摘要： A semiconductor device includes a lead frame, a transistor, and an encapsulation resin. The lead frame includes a drain frame, a source frame, and a gate frame. The drain frame includes drain frame fingers. The source frame includes source frame fingers. The drain frame fingers and the source frame fingers are alternately arranged in a first direction and include overlapping portions as viewed from a first direction. In a region where each drain frame finger overlaps the source frame fingers as viewed in the first direction, at least either one of the drain frame fingers and the source frame fingers are not exposed from the back surface of the encapsulation resin.

公开(公告)号：US20150371983A1

公开(公告)日：2015-12-24

申请号：US14838360

申请日：2015-08-27

申请人： ROHM CO., LTD.

发明人： Kenichi YOSHIMOCHI

IPC分类号： H01L27/02 ,  H01L23/31 ,  H01L23/29 ,  H01L29/423

CPC分类号： H01L27/0255 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/49562 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0629 ,  H01L27/0727 ,  H01L29/0657 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/47 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12032 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a Schottky barrier diode in a package with the transistor and the Schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device 1 includes a semiconductor layer 22, a transistor area D formed on the semiconductor layer 22 and constituting the transistor 11, and a diode area C formed on the semiconductor layer 22 and constituting the Schottky barrier diode 10. The semiconductor layer 22 in the diode area C is thinner than the semiconductor layer 22 in the transistor area D.

摘要翻译： 一种半导体器件，其能够确保晶体管的耐受电压并且降低芯片中形成的晶体管和肖特基势垒二极管的封装中的肖特基势垒二极管的正向电压，以及由覆盖半导体器件的树脂封装形成的半导体封装 被提供。 半导体器件1包括半导体层22，形成在半导体层22上并构成晶体管11的晶体管区域D和形成在半导体层22上并构成肖特基势垒二极管10的二极管区域C.半导体层22 二极管区域C比晶体管区域D中的半导体层22薄。

公开(公告)号：US20130163211A1

公开(公告)日：2013-06-27

申请号：US13771431

申请日：2013-02-20

申请人： ROHM CO., LTD.

发明人： Kenichi YOSHIMOCHI

IPC分类号： H05K7/14

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49513 ,  H01L23/49537 ,  H01L23/49551 ,  H01L23/49555 ,  H01L23/49562 ,  H01L23/49805 ,  H01L24/29 ,  H01L24/30 ,  H01L24/33 ,  H01L24/36 ,  H01L24/37 ,  H01L24/39 ,  H01L24/40 ,  H01L24/41 ,  H01L25/072 ,  H01L25/074 ,  H01L25/117 ,  H01L29/78 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H05K7/14 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A module (1) includes a first functional device (2) and a second functional device (3). The first functional device (2) includes a base electrode, an emitter electrode and a collector electrode. The second functional device (3) includes at least one electrode. The module (1) further includes a conductive frame (4). One of the base electrode, the emitter electrode, and the collector electrode of the first functional device (2) is directly connected to the frame (4). The electrode of the second functional device (3) is also directly connected to the frame (4). The frame (4) includes a portion serving as a terminal for external connection.

公开(公告)号：US20220246551A1

公开(公告)日：2022-08-04

申请号：US17725111

申请日：2022-04-20

申请人： ROHM CO., LTD.

发明人： Kentaro CHIKAMATSU ,  Koshun SAITO ,  Kenichi YOSHIMOCHI

IPC分类号： H01L23/64 ,  H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

摘要： A semiconductor device includes a lead frame, a transistor, and an encapsulation resin. The lead frame includes a drain frame, a source frame, and a gate frame. The drain frame includes drain frame fingers. The source frame includes source frame fingers. The drain frame fingers and the source frame fingers are alternately arranged in a first direction and include overlapping portions as viewed from a first direction. In a region where each drain frame finger overlaps the source frame fingers as viewed in the first direction, at least either one of the drain frame fingers and the source frame fingers are not exposed from the back surface of the encapsulation resin.

公开(公告)号：US20160365442A1

公开(公告)日：2016-12-15

申请号：US15245570

申请日：2016-08-24

申请人： ROHM CO., LTD.

发明人： Kenichi YOSHIMOCHI

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L29/417 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/7813 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4916 ,  H01L29/4925 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

摘要： A semiconductor device that has a source region, a channel region, and a drain region disposed in order from a surface of the semiconductor device in a thickness direction of a semiconductor substrate. The semiconductor device includes a gate insulating film having an extended portion that covers the surface of the semiconductor substrate outside of a gate trench and a top surface of a polysilicon gate. A connection gate trench branches from the gate trench, and joins a contact gate trench which is wider than the gate trench and the connection gate trench. The polysilicon gate is embedded in the connection gate trench and the contact gate, and extends from the gate trench to the contact gate trench through the connection gate trench. The gate contact groove is formed in the polysilicon gate within the contact gate trench.

摘要翻译： 一种半导体器件，具有从半导体器件的表面沿半导体衬底的厚度方向依次设置的源极区域，沟道区域和漏极区域。 该半导体器件包括栅极绝缘膜，该栅极绝缘膜具有覆盖栅极沟槽外部的半导体衬底的表面的延伸部分和多晶硅栅极的顶表面。 连接栅极沟槽从栅极沟槽分支，并且接合比栅极沟槽和连接栅极沟槽更宽的接触栅极沟槽。 多晶硅栅极嵌入在连接栅极沟槽和接触栅极中，并且通过连接栅极沟槽从栅极沟槽延伸到接触栅极沟槽。 栅极接触沟槽形成在接触栅极沟槽内的多晶硅栅极中。

公开(公告)号：US20150380484A1

公开(公告)日：2015-12-31

申请号：US14845386

申请日：2015-09-04

申请人： ROHM CO., LTD.

发明人： Kenichi YOSHIMOCHI

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L21/76237 ,  H01L21/76205 ,  H01L21/763 ,  H01L23/4824 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L24/94 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/0635 ,  H01L27/0664 ,  H01L27/11896 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66106 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7808 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/866 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/036 ,  H01L2224/039 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/4911 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2224/03 ,  H01L2924/01029 ,  H01L21/78 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench.

摘要翻译： 半导体器件包括：第一导电型半导体层，包括其中形成有杂质区的晶体管的有源区和围绕有源区的边缘区;形成在有源区和边界之间的第二导电型沟道层; 形成半导体层的前表面，形成在有源区中的至少一个栅极沟槽，以从半导体层的前表面延伸通过沟道层，形成在栅极沟槽的内表面上的栅极绝缘膜， 形成在栅极沟槽中的栅极绝缘膜内部的栅极电极，以及布置在有源区域和边缘区域之间的至少一个隔离沟槽，以围绕有源区域并且从半导体层的前表面延伸穿过沟道层， 隔离沟槽的深度等于栅极沟槽的深度。

公开(公告)号：US20150084176A1

公开(公告)日：2015-03-26

申请号：US14556670

申请日：2014-12-01

申请人： ROHM CO., LTD.

发明人： Kenichi YOSHIMOCHI

IPC分类号： H01L25/11 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49513 ,  H01L23/49537 ,  H01L23/49551 ,  H01L23/49555 ,  H01L23/49562 ,  H01L23/49805 ,  H01L24/29 ,  H01L24/30 ,  H01L24/33 ,  H01L24/36 ,  H01L24/37 ,  H01L24/39 ,  H01L24/40 ,  H01L24/41 ,  H01L25/072 ,  H01L25/074 ,  H01L25/117 ,  H01L29/78 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H05K7/14 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A module (1) includes a first functional device (2) and a second functional device (3). The first functional device (2) includes a base electrode, an emitter electrode and a collector electrode. The second functional device (3) includes at least one electrode. The module (1) further includes a conductive frame (4). One of the base electrode, the emitter electrode, and the collector electrode of the first functional device (2) is directly connected to the frame (4). The electrode of the second functional device (3) is also directly connected to the frame (4). The frame (4) includes a portion serving as a terminal for external connection.

公开(公告)号：US20200176400A1

公开(公告)日：2020-06-04

申请号：US16780514

申请日：2020-02-03

申请人： ROHM CO., LTD.

发明人： Kentaro CHIKAMATSU ,  Koshun SAITO ,  Kenichi YOSHIMOCHI

IPC分类号： H01L23/64 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495

摘要： A semiconductor device includes a lead frame, a transistor, and an encapsulation resin. The lead frame includes a drain frame, a source frame, and a gate frame. The drain frame includes drain frame fingers. The source frame includes source frame fingers. The drain frame fingers and the source frame fingers are alternately arranged in a first direction and include overlapping portions as viewed from a first direction. In a region where each drain frame finger overlaps the source frame fingers as viewed in the first direction, at least either one of the drain frame fingers and the source frame fingers are not exposed from the back surface of the encapsulation resin.

公开(公告)号：US20160284588A1

公开(公告)日：2016-09-29

申请号：US15174366

申请日：2016-06-06

申请人： ROHM CO., LTD.

发明人： Kenichi YOSHIMOCHI

IPC分类号： H01L21/762 ,  H01L29/423 ,  H01L29/66 ,  H01L29/739 ,  H01L27/02 ,  H01L29/866 ,  H01L21/763 ,  H01L27/06 ,  H01L27/118 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L21/76237 ,  H01L21/76205 ,  H01L21/763 ,  H01L23/4824 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L24/94 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/0635 ,  H01L27/0664 ,  H01L27/11896 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66106 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7808 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/866 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/036 ,  H01L2224/039 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/4911 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2224/03 ,  H01L2924/01029 ,  H01L21/78 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench.