发明公开
- 专利标题: SEMICONDUCTOR DEVICE
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申请号: US18645947申请日: 2024-04-25
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公开(公告)号: US20240274513A1公开(公告)日: 2024-08-15
- 发明人: Koshun SAITO , Hiroyuki SAKAIRI , Yasufumi MATSUOKA , Kenichi YOSHIMOCHI
- 申请人: Rohm Co., Ltd.
- 申请人地址: JP Kyoto-shi
- 专利权人: Rohm Co., Ltd.
- 当前专利权人: Rohm Co., Ltd.
- 当前专利权人地址: JP Kyoto-shi
- 优先权: JP 19090488 2019.05.13
- 主分类号: H01L23/495
- IPC分类号: H01L23/495 ; H01L23/00
摘要:
A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.
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