- 专利标题: STACKED CLIP DESIGN FOR GaN HALF BRIDGE IPM
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申请号: US17960871申请日: 2022-10-06
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公开(公告)号: US20240120308A1公开(公告)日: 2024-04-11
- 发明人: Kwang-Soo Kim , Makoto Shibuya , Woochan Kim , Vivek Arora
- 申请人: Texas Instruments Incorporated
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L25/16
摘要:
An electronic device includes a substrate having first and second conductive traces, a semiconductor die having a transistor with a first terminal and a second terminal, and first and second metal clips. The first metal clip has a first end portion coupled to the first terminal of the transistor, and a second end portion coupled to the first conductive trace of the substrate. The second metal clip has a first end portion coupled to the second terminal of the transistor and a second end portion coupled to the second conductive trace of the substrate, and a middle portion of the second metal clip is spaced apart from and at least partially overlying a portion of the first metal clip.
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