An object is to provide a technique capable of reducing variations in gate-source voltage among a plurality of semiconductor elements. The semiconductor device includes the plurality of semiconductor elements, a metal electrode, and a control wire. Each of the plurality of semiconductor elements has a control electrode configured to control a main current. The main current of the plurality of semiconductor element flows through the metal electrode. The control wire connects each of the control electrodes of the plurality of semiconductor elements in series, and interlinks with a magnetic field generated when the main current flows through the metal electrode.