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公开(公告)号:US20240079318A1
公开(公告)日:2024-03-07
申请号:US17903965
申请日:2022-09-06
IPC分类号: H01L23/522 , H01L23/00 , H01L23/528 , H01L25/065
CPC分类号: H01L23/5227 , H01L23/5222 , H01L23/5228 , H01L23/528 , H01L24/48 , H01L25/0657 , H01L2224/48095 , H01L2224/48105 , H01L2224/48147 , H01L2224/48227 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/1438 , H01L2924/30101 , H01L2924/30105 , H01L2924/30111
摘要: A storage device includes a substrate of a memory package and a first memory die. The substrate includes a controller and a first pin pad, the first pin pad being electrically connected to the controller and defining a data channel for data communications. The first memory die includes a front pin pad electrically connected to the first pin pad of the substrate by way of a first bond wire, a rear pin pad, a redistribution layer electrically connecting the front pin pad and the rear pin pad of the first memory die, and a plurality of memory cells configured to provide non-volatile storage accessible by way of the data channel.
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公开(公告)号:US20240213151A1
公开(公告)日:2024-06-27
申请号:US18222632
申请日:2023-07-17
IPC分类号: H01L23/522 , H01L23/00 , H01L23/528 , H01L23/66 , H01L25/065
CPC分类号: H01L23/5227 , H01L23/5226 , H01L23/528 , H01L23/66 , H01L24/08 , H01L25/0652 , H01L2223/6672 , H01L2224/08146 , H01L2924/1206 , H01L2924/1433 , H01L2924/14361 , H01L2924/1438
摘要: A semiconductor device includes semiconductor dies formed with through silicon vias (TSVs). The TSVs are coupled to contact pads in a surface of the semiconductor die by coils forming inductance loops at a number of contact pads. These inductance loops serve to distribute the capacitance at each bond pad along transmission lines, which distribution of the capacitance allows for a marked increase in read/write bandwidth for the semiconductor die.
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3.
公开(公告)号:US20240145424A1
公开(公告)日:2024-05-02
申请号:US18355111
申请日:2023-07-19
IPC分类号: H01L23/00 , G11C11/56 , H01L23/498 , H01L25/065
CPC分类号: H01L24/48 , G11C11/5628 , H01L23/49816 , H01L24/08 , H01L25/0657 , G11C2211/5641 , H01L2224/08225 , H01L2224/48132 , H01L2224/48157 , H01L2225/0651 , H01L2225/06562 , H01L2924/1438 , H01L2924/15311 , H01L2924/30107
摘要: A storage device includes a substrate of a memory package that includes a first pin pad, a controller mounted on the substrate and electrically connected to the first pin pad, the controller being configured to manage data communications on a data channel, and a first memory die. The first memory die includes a front pin pad electrically connected to the first pin pad of the substrate by way of a first bond wire, a rear pin pad, a conductor segment electrically connecting the front pin pad and the rear pin pad of the first memory die, and a plurality of memory cells configured to provide non-volatile storage accessible by way of the data channel.
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