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公开(公告)号:CN105393352B
公开(公告)日:2018-11-16
申请号:CN201480037851.1
申请日:2014-04-04
申请人: 贺利氏材料新加坡私人有限公司
CPC分类号: H01B5/02 , C22C9/00 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/745 , H01L2224/05624 , H01L2224/05644 , H01L2224/4321 , H01L2224/43985 , H01L2224/45014 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48824 , H01L2224/48844 , H01L2224/85205 , H01L2224/859 , H01L2924/00011 , H01L2924/12041 , H01L2924/14 , H01L2924/181 , H05K1/0213 , H05K1/111 , H01L2924/01047 , H01L2924/00015 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/01028 , H01L2924/01046 , H01L2924/01079 , H01L2924/01078 , H01L2924/01024 , H01L2924/0102 , H01L2924/01058 , H01L2924/01012 , H01L2924/01057 , H01L2924/01013 , H01L2924/01005 , H01L2924/0104 , H01L2924/01022 , H01L2924/01015 , H01L2924/01016 , H01L2924/01026 , H01L2924/01025 , H01L2924/00014 , H01L2224/43848 , H01L2924/01204 , H01L2924/01203 , H01L2924/01029 , H01L2924/01014 , H01L2924/013 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/00012 , H01L2924/01033
摘要: 本发明涉及包括具有表面的芯的接合导线,其中所述芯包括铜作为主要成分,其中所述芯包括铜作为主要成分,其中在所述芯中的晶体颗粒的平均大小是在2.5μm与30μm之间,并且其中所述接合导线的屈服强度小于120 MPa。
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公开(公告)号:CN107492538A
公开(公告)日:2017-12-19
申请号:CN201710431549.X
申请日:2017-06-09
申请人: 三星电子株式会社
IPC分类号: H01L23/538
CPC分类号: H01L24/94 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/29 , H01L24/80 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L2224/02215 , H01L2224/0345 , H01L2224/0346 , H01L2224/03616 , H01L2224/04105 , H01L2224/05007 , H01L2224/05026 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05546 , H01L2224/05547 , H01L2224/05556 , H01L2224/05559 , H01L2224/05562 , H01L2224/05571 , H01L2224/05573 , H01L2224/05647 , H01L2224/08121 , H01L2224/08147 , H01L2224/08501 , H01L2224/29187 , H01L2224/29188 , H01L2224/80013 , H01L2224/80097 , H01L2224/8012 , H01L2224/8082 , H01L2224/80895 , H01L2224/80896 , H01L2224/8312 , H01L2224/83896 , H01L2224/9211 , H01L2224/94 , H01L2225/06527 , H01L2924/0537 , H01L2924/05432 , H01L2924/05442 , H01L2924/0549 , H01L2924/365 , H01L2224/80 , H01L2924/00012 , H01L2924/00014 , H01L2924/01025 , H01L2924/013 , H01L2924/01013 , H01L23/5386
摘要: 本发明公开了一种晶片到晶片接合结构,该晶片到晶片接合结构包括:第一晶片,包括在第一绝缘层中的第一导电焊垫和围绕第一导电焊垫的下表面和侧表面的第一阻挡层;第二晶片,包括在第二绝缘层中的第二导电焊垫和围绕第二导电焊垫的下表面和侧表面的第二阻挡层,第二晶片在反转之后接合到第一晶片使得第二绝缘层接合到第一绝缘层并且第二导电焊垫的上表面的至少一部分部分地或完全地接合到第一导电焊垫的上表面的至少一部分;以及第三阻挡层,在第一晶片和第二晶片之间的在该处第一导电焊垫和第二导电焊垫未彼此接合的部分中。
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公开(公告)号:CN104845545B
公开(公告)日:2017-06-20
申请号:CN201510166579.3
申请日:2010-12-24
申请人: 日东电工株式会社
IPC分类号: H01L21/67 , H01L21/683 , H01L21/60
CPC分类号: H01L21/6836 , H01L21/67132 , H01L23/562 , H01L24/16 , H01L24/81 , H01L2221/68377 , H01L2224/81201 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , Y10T428/28 , Y10T428/2848 , H01L2924/00
摘要: 本发明涉及半导体背面用切割带集成膜。本发明提供一种半导体背面用切割带集成膜,其包括:包括基材和设置于所述基材上的压敏粘合剂层的切割带;和设置于所述压敏粘合剂层上的倒装芯片型半导体背面用膜,其中所述倒装芯片型半导体背面用膜包含黑色颜料。
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公开(公告)号:CN102892549B
公开(公告)日:2017-01-18
申请号:CN201180022297.6
申请日:2011-04-04
申请人: 铟泰公司
IPC分类号: B23K35/02 , B23K35/26 , B23K35/362
CPC分类号: B23K35/025 , B23K35/0244 , B23K35/26 , B23K35/262 , B23K35/264 , B23K35/362 , C22C12/00 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/27332 , H01L2224/27505 , H01L2224/29 , H01L2224/29101 , H01L2224/29105 , H01L2224/29109 , H01L2224/29111 , H01L2224/29298 , H01L2224/838 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/15747 , H05K3/3457 , H05K3/3484 , Y10T428/12493 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01083 , H01L2924/01031 , H01L2924/3512 , H01L2924/00 , H01L2924/00014 , H01L2924/00015 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要: 焊料膏包括约60wt%至约92wt%之间的量的第一焊料合金粉末;大于0wt%并且小于约12wt%的量的第二焊料合金粉末;和助焊剂;其中第一焊料合金粉末包括第一焊料合金,其固相线温度高于约260℃;和其中第二焊料合金粉末包括第二焊料合金,其固相线温度低于约250℃。
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公开(公告)号:CN106129033A
公开(公告)日:2016-11-16
申请号:CN201610606428.X
申请日:2016-07-29
申请人: 王汉清
发明人: 王汉清
CPC分类号: H01L2224/45 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4566 , H01L2924/00011 , H01L2924/00012 , H01L2924/01004 , H01L2924/01014 , H01L2924/01047 , H01L2924/01203 , H01L2924/01025 , H01L2924/00015 , H01L23/49 , H01L21/4889
摘要: 一种具有磁性镀层铜键合丝,所述铜键合丝的元素质量百分比为:铜的质量百分比大于99.95%,硅的质量百分比为0.003%‑0.05%,银的质量百分比为0.001%‑0.005%,锰的质量百分比为0.005%‑0.01%,余量为不可避免的杂质;其特征在于,所述铜键合丝的外层依次包裹有磁性镀层和化学镀钯层。本发明生成的铜键合丝性能良好稳定,具有防氧化和抗电磁干扰的优点。
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公开(公告)号:CN103346134B
公开(公告)日:2016-09-21
申请号:CN201210359588.0
申请日:2006-06-14
申请人: 丘费尔资产股份有限公司
IPC分类号: H01L23/48 , H01L21/768 , H01L21/603 , H01L25/065
CPC分类号: H01L24/11 , H01L21/4853 , H01L21/6835 , H01L21/76898 , H01L23/427 , H01L23/48 , H01L23/481 , H01L23/488 , H01L23/49827 , H01L23/5389 , H01L23/552 , H01L23/66 , H01L24/02 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/75 , H01L24/81 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2221/68327 , H01L2221/68345 , H01L2221/68363 , H01L2221/68368 , H01L2223/6616 , H01L2223/6622 , H01L2224/02372 , H01L2224/0401 , H01L2224/114 , H01L2224/1147 , H01L2224/116 , H01L2224/11912 , H01L2224/13012 , H01L2224/13021 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13099 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13184 , H01L2224/1358 , H01L2224/136 , H01L2224/13609 , H01L2224/16146 , H01L2224/16237 , H01L2224/24226 , H01L2224/45111 , H01L2224/75 , H01L2224/75305 , H01L2224/81001 , H01L2224/81011 , H01L2224/81054 , H01L2224/81136 , H01L2224/81193 , H01L2224/81203 , H01L2224/81204 , H01L2224/81825 , H01L2224/81894 , H01L2224/83102 , H01L2224/92125 , H01L2225/06513 , H01L2225/06524 , H01L2225/06531 , H01L2225/06534 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2225/06593 , H01L2225/06596 , H01L2924/00013 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01S5/02272 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/183 , H01S5/18308 , H01S2301/176 , H01L2924/00014 , H01L2924/00
摘要: 本发明公开了插柱和穿透互连方式。一种物理地和电气地互连两个芯片的方法,包括:将第一芯片上的导电触点与第二芯片上对应的导电触点对准,该第一芯片的导电触点为刚性材料,该第二芯片的导电触点为与该刚性材料相对的韧性材料;使对准的该第一芯片上的导电触点与该第二芯片上相应的导电触点接触;将该第一和第二芯片的触点提高至低于至少该刚性材料的液化温度,同时向该第一和第二芯片施加足够的压力,以使该刚性材料穿透该韧性材料从而形成两者之间的导电连接;以及在形成导电连接之后,冷却该第一和第二芯片的触点至环境温度。
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公开(公告)号:CN103178031B
公开(公告)日:2016-08-31
申请号:CN201310019765.5
申请日:2006-06-14
申请人: 丘费尔资产股份有限公司
IPC分类号: H01L23/48 , H01L23/498 , H01L23/552 , H01L23/427 , H01L25/065 , H01L21/768 , H01L21/683 , H01L21/48 , H01L21/60
CPC分类号: H01L24/11 , H01L21/4853 , H01L21/6835 , H01L21/76898 , H01L23/427 , H01L23/48 , H01L23/481 , H01L23/488 , H01L23/49827 , H01L23/5389 , H01L23/552 , H01L23/66 , H01L24/02 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/75 , H01L24/81 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2221/68327 , H01L2221/68345 , H01L2221/68363 , H01L2221/68368 , H01L2223/6616 , H01L2223/6622 , H01L2224/02372 , H01L2224/0401 , H01L2224/114 , H01L2224/1147 , H01L2224/116 , H01L2224/11912 , H01L2224/13012 , H01L2224/13021 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/13099 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13184 , H01L2224/1358 , H01L2224/136 , H01L2224/13609 , H01L2224/16146 , H01L2224/16237 , H01L2224/24226 , H01L2224/45111 , H01L2224/75 , H01L2224/75305 , H01L2224/81001 , H01L2224/81011 , H01L2224/81054 , H01L2224/81136 , H01L2224/81193 , H01L2224/81203 , H01L2224/81204 , H01L2224/81825 , H01L2224/81894 , H01L2224/83102 , H01L2224/92125 , H01L2225/06513 , H01L2225/06524 , H01L2225/06531 , H01L2225/06534 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2225/06593 , H01L2225/06596 , H01L2924/00013 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01S5/02272 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/183 , H01S5/18308 , H01S2301/176 , H01L2924/00014 , H01L2924/00
摘要: 一种将第一晶片上的第一接触点与第二晶片上的第二接触点电连接的方法,第一接触点包括刚性材料,第二接触点包括相对于该刚性材料为韧性的材料,因此当叠在一起时刚性材料将穿进韧性材料,该刚性和韧性材料都是导电材料,所述方法涉及使刚性材料与韧性材料接触,向第一接触点或第二接触点中的一个接触点施加力从而使刚性材料穿进韧性材料,加热刚性和韧性材料从而使韧性材料软化,和将韧性材料限制到预定区域内。
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公开(公告)号:CN102870203B
公开(公告)日:2016-08-24
申请号:CN201080065821.3
申请日:2010-12-17
申请人: 德克萨斯仪器股份有限公司
CPC分类号: H01L24/16 , H01L23/3677 , H01L23/481 , H01L25/0657 , H01L2224/05124 , H01L2224/05147 , H01L2224/13009 , H01L2224/13099 , H01L2224/16235 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01025 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15151 , H01L2924/15787 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
摘要: 本发明涉及一种集成电路器件(100),其包括具有顶面的衬底(110),该顶面包括衬底焊盘(112);以及包括半导体衬底(105)的贯穿衬底通孔(115)芯片,半导体衬底(105)包括具有有源电路的顶部半导体表面(106)和底表面(106)。顶部半导体表面(107)包括在衬底顶表面上耦合到衬底焊盘的结合连接器(109)。多个贯穿衬底通孔(TSV)包括从顶侧半导体表面延伸到凸出TSV尖端(121)的内部金属芯(125),该TSV尖端(121)从底表面向外延伸。多个TSV的至少一个是伪TSV(120),伪TSV(120)具有其凸出TSV尖端,该凸出TSV尖端没有到其上的任何电气连接,并且提供另外表面积从而增强从TSV芯片的底侧散热。
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公开(公告)号:CN103403862B
公开(公告)日:2016-08-10
申请号:CN201180053352.8
申请日:2011-10-28
申请人: 丹福斯矽电有限责任公司
发明人: R·埃塞勒
CPC分类号: H01L37/00 , G01K7/16 , H01L23/15 , H01L23/34 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/0603 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/8384 , H01L2224/85205 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/0102 , H01L2924/01025 , H01L2924/01029 , H01L2924/01032 , H01L2924/01047 , H01L2924/01058 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/07811 , H01L2924/13091 , H01L2924/15787 , H01L2924/19105 , H01L2924/19107 , H01L2924/00 , H01L2224/45099 , H01L2224/83205
摘要: 用于制造与有源器件共同烧结的可烧结的电器件的方法,其中平面形式的器件配备有至少一个特定用于烧结的平坦底侧,并且在与烧结面相对的面上以金属接触面的形式存在电接触区,所述面在上侧可以通过来自线接合或钎焊或烧结或压力接触的组中的常用方法来接触,其中该器件是温度传感器,在其底侧上在陶瓷体上设置可烧结的金属化部,并在其陶瓷体上设置用于延续电连接的电接触面。
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公开(公告)号:CN105632953A
公开(公告)日:2016-06-01
申请号:CN201610083738.8
申请日:2010-08-24
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L21/60 , H01L23/488
CPC分类号: H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03424 , H01L2224/03464 , H01L2224/0347 , H01L2224/0401 , H01L2224/05559 , H01L2224/05571 , H01L2224/05572 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1148 , H01L2224/1161 , H01L2224/11616 , H01L2224/11831 , H01L2224/13005 , H01L2224/13022 , H01L2224/1308 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2924/00013 , H01L2924/0002 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2924/01014 , H01L2924/206 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要: 本发明揭示一种半导体装置及其制造方法。该制造方法包括:提供具有一金属垫区的一半导体基底;在该半导体基底上形成一封盖(encapsulating)层,其中该封盖层具有一开口露出该金属垫区的一部分;在该封盖层的该开口内露出的该金属垫区的该部分上形成一凸块下金属层(under-bump metallurgy,UBM);在该凸块下金属层上形成一凸块(bump)层,以填入该封盖层的该开口且延伸至该封盖层的一上表面;自该封盖层的该上表面去除该凸块层;去除该封盖层的该上表面,直至该凸块层的一顶部突出于该封盖层;以及进行一缓冲工艺,以轻微研磨该半导体基底,使该封盖层的厚度达到最终目标厚度。本发明可避免UBM底切问题。
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