公开(公告)号：US20170133296A1

公开(公告)日：2017-05-11

申请号：US15410625

申请日：2017-01-19

申请人： Intel Corporation

发明人： Chandra M. Jha ,  Feras EID ,  Johanna M. SWAN ,  Ashish GUPTA

IPC分类号： H01L23/373 ,  H01L23/00

CPC分类号： H01L23/3733 ,  H01L23/3736 ,  H01L23/3737 ,  H01L23/433 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/1133 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/11826 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13078 ,  H01L2224/13147 ,  H01L2224/13193 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/271 ,  H01L2224/27436 ,  H01L2224/2745 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/29347 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32058 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06524 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/16724 ,  H01L2924/16747 ,  H01L2924/3511 ,  Y10T428/249921 ,  Y10T428/26 ,  H01L2224/27 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/00014

摘要： A copper nanorod thermal interface material (TIM) is described. The copper nanorod TIM includes a plurality of copper nanorods having a first end thermally coupled with a first surface, and a second end extending toward a second surface. A plurality of copper nanorod branches are formed on the second end. The copper nanorod branches are metallurgically bonded to a second surface. The first surface may be the back side of a die. The second surface may be a heat spread or a second die. The TIM may include a matrix material surrounding the copper nanorods. In an embodiment, the copper nanorods are formed in clusters.

公开(公告)号：US08501615B2

公开(公告)日：2013-08-06

申请号：US13161303

申请日：2011-06-15

申请人： Ming-Da Cheng ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Tzong-Hann Yang ,  Wen-Hsiung Lu ,  Zheng-Yi Lim ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Ming-Da Cheng ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Tzong-Hann Yang ,  Wen-Hsiung Lu ,  Zheng-Yi Lim ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1133 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/13655 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2224/11

摘要： A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps.

摘要翻译： 提供一种用于形成金属凸块的系统和方法。 一个实施例包括将导电材料附着到载体介质上，然后将导电材料接触到基底的导电区域。 然后使用接合工艺将导电材料的部分结合到导电区域，以在导电区域上形成导电盖，并且去除残留的导电材料和载体介质。 回流工艺用于将导电盖重新流到导电凸块中。

公开(公告)号：US20120273938A1

公开(公告)日：2012-11-01

申请号：US13098448

申请日：2011-04-30

申请人： DaeSik Choi ,  Sang Mi Park

发明人： DaeSik Choi ,  Sang Mi Park

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L23/49816 ,  H01L21/4853 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03474 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/10145 ,  H01L2224/1132 ,  H01L2224/1133 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11903 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13019 ,  H01L2224/13022 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16237 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/1161 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor die with a first conductive layer formed over an active surface of the semiconductor die. An insulation layer is formed over the active surface of the semiconductor die. A second conductive layer is conformally applied over the insulating layer and first conductive layer. Conductive pillars are formed over the first conductive layer. Conductive rings are formed around a perimeter of the conductive pillars. A conductive material is deposited over the surface of the conductive pillars within the conductive rings. A substrate has a third conductive layer formed over a surface of the substrate. The semiconductor die is mounted to a substrate with the third conductive layer electrically connected to the conductive material within the conductive rings. The conductive rings inhibit outward flow of the conductive material from under the conductive pillars to prevent electrical bridging between adjacent conductive pillars.

摘要翻译： 半导体器件具有半导体管芯，其具有形成在半导体管芯的有源表面上的第一导电层。 在半导体管芯的有效表面上形成绝缘层。 第二导电层共形施加在绝缘层和第一导电层上。 导电柱形成在第一导电层上。 导电环围绕导电柱的周边形成。 在导电环内的导电柱的表面上沉积导电材料。 衬底具有形成在衬底的表面上的第三导电层。 将半导体管芯安装到衬底上，其中第三导电层与导电环内的导电材料电连接。 导电环阻止导电材料从导电柱下方向外流动，以防止相邻导电柱之间的电桥接。

公开(公告)号：US20170162551A1

公开(公告)日：2017-06-08

申请号：US15433721

申请日：2017-02-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing-Cheng Lin ,  Po-Hao Tsai ,  Li-Hui Cheng

IPC分类号： H01L25/10 ,  H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/538 ,  H01L23/31

CPC分类号： H01L25/105 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/04105 ,  H01L2224/1133 ,  H01L2224/1182 ,  H01L2224/11831 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81801 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/83 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： A semiconductor device and method of manufacture is provided. A reflowable material is placed in electrical connection with a through via, wherein the through via extends through an encapsulant. A protective layer is formed over the reflowable material. In an embodiment an opening is formed within the protective layer to expose the reflowable material. In another embodiment the protective layer is formed such that the reflowable material is extending away from the protective layer.

公开(公告)号：US20160218049A1

公开(公告)日：2016-07-28

申请号：US14604603

申请日：2015-01-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing-Cheng Lin ,  Po-Hao Tsai ,  Li-Hui Cheng

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L25/00 ,  H01L21/768 ,  H01L25/065 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L25/105 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/04105 ,  H01L2224/1133 ,  H01L2224/1182 ,  H01L2224/11831 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81801 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/83 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： A semiconductor device and method of manufacture is provided. A reflowable material is placed in electrical connection with a through via, wherein the through via extends through an encapsulant. A protective layer is formed over the reflowable material. In an embodiment an opening is formed within the protective layer to expose the reflowable material. In another embodiment the protective layer is formed such that the reflowable material is extending away from the protective layer.

摘要翻译： 提供了半导体器件和制造方法。 可回流材料与通孔电连接，其中通孔延伸通过密封剂。 在可回流材料上形成保护层。 在一个实施例中，在保护层内形成开口以露出可回流材料。 在另一个实施例中，保护层形成为使得可回流材料远离保护层延伸。

公开(公告)号：US20100019347A1

公开(公告)日：2010-01-28

申请号：US12180042

申请日：2008-07-25

申请人： Neil McLellan ,  Fei Guo ,  Daniel Chung ,  Terence Cheung

发明人： Neil McLellan ,  Fei Guo ,  Daniel Chung ,  Terence Cheung

IPC分类号： H01L29/00 ,  H01L21/20

CPC分类号： H01L23/5223 ,  H01G4/008 ,  H01G4/01 ,  H01G4/33 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/642 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/02375 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05093 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05576 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1133 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/14133 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Various on-chip capacitors and methods of making the same are disclosed. In one aspect, a method of manufacturing a capacitor is provided that includes forming a first conductor structure on a semiconductor chip and forming a passivation structure on the first conductor structure. An under bump metallization structure is formed on the passivation structure. The under bump metallization structure overlaps at least a portion of the first conductor structure to provide a capacitor.

摘要翻译： 公开了各种片上电容器及其制造方法。 一方面，提供一种制造电容器的方法，包括在半导体芯片上形成第一导体结构，并在第一导体结构上形成钝化结构。 在钝化结构上形成凹凸金属化结构。 凸起下金属化结构与第一导体结构的至少一部分重叠以提供电容器。

公开(公告)号：US06989325B2

公开(公告)日：2006-01-24

申请号：US10653860

申请日：2003-09-03

申请人： Ruoh-Huey Uang ,  Yu-Hua Chen

发明人： Ruoh-Huey Uang ,  Yu-Hua Chen

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  B82Y10/00 ,  H01L23/53276 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05111 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1133 ,  H01L2224/13099 ,  H01L2224/13193 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01016 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H05K3/06 ,  H05K3/249 ,  H05K3/4007 ,  H05K2201/026 ,  Y10S977/882 ,  H01L2924/00014 ,  H01L2924/00

摘要： A self-assembled nanometer conductive bump and a method for fabricating the bump. In the method, a multiplicity of carbon nanotubes that are coated at two ends with chemically functional groups is first provided. A substrate that is equipped with at least one bond pad on a surface is then positioned juxtaposed to the carbon nanotubes for forming a bond between the carbon nanotubes and the metal pads facilitated by a chemical affinity existed between the functional groups and the metal pad.

摘要翻译： 一种自组装纳米导电凸块及其制造方法。 在该方法中，首先提供用化学官能团在两端涂覆的多个碳纳米管。 然后将配备有表面上的至少一个键合焊盘的衬底与碳纳米管并置放置，以形成碳纳米管与金属衬底之间的键，这通过官能团和金属衬垫之间存在的化学亲合力而促进。

公开(公告)号：US09601406B2

公开(公告)日：2017-03-21

申请号：US13782893

申请日：2013-03-01

申请人： Chandra M. Jha ,  Feras Eid ,  Johanna M. Swan ,  Ashish Gupta

发明人： Chandra M. Jha ,  Feras Eid ,  Johanna M. Swan ,  Ashish Gupta

IPC分类号： H01L23/34 ,  H01L21/8238 ,  H01L23/373 ,  H01L23/00 ,  H01L23/433

CPC分类号： H01L23/3733 ,  H01L23/3736 ,  H01L23/3737 ,  H01L23/433 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/1133 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/11826 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13078 ,  H01L2224/13147 ,  H01L2224/13193 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/271 ,  H01L2224/27436 ,  H01L2224/2745 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/29347 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32058 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06524 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/16724 ,  H01L2924/16747 ,  H01L2924/3511 ,  Y10T428/249921 ,  Y10T428/26 ,  H01L2224/27 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/00014

摘要： A copper nanorod thermal interface material (TIM) is described. The copper nanorod TIM includes a plurality of copper nanorods having a first end thermally coupled with a first surface, and a second end extending toward a second surface. A plurality of copper nanorod branches are formed on the second end. The copper nanorod branches are metallurgically bonded to a second surface. The first surface may be the back side of a die. The second surface may be a heat spread or a second die. The TIM may include a matrix material surrounding the copper nanorods. In an embodiment, the copper nanorods are formed in clusters.

公开(公告)号：US08466567B2

公开(公告)日：2013-06-18

申请号：US12884134

申请日：2010-09-16

申请人： DaeSik Choi ,  SangMi Park ,  Oh Han Kim

发明人： DaeSik Choi ,  SangMi Park ,  Oh Han Kim

IPC分类号： H01L23/28

CPC分类号： H01L23/49816 ,  H01L21/4853 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/03 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/11003 ,  H01L2224/1133 ,  H01L2224/13082 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48155 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/83005 ,  H01L2224/8385 ,  H01L2224/92125 ,  H01L2224/92143 ,  H01L2225/06517 ,  H01L2225/06558 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacture of an integrated circuit packaging system includes: forming a connection carrier having base device pads and base interconnect pads on a carrier top side of the connection carrier; connecting a base integrated circuit to the base device pads and mounted over the carrier top side; mounting base vertical interconnects directly on the base interconnect pads; attaching a base package substrate to the base integrated circuit and directly on the base vertical interconnects; forming a base encapsulation on the base package substrate, the base device pads, and the base interconnect pads; and removing a portion of the connection carrier with the base device pads and the base interconnect pads partially exposed opposite the base package substrate.

摘要翻译： 一种制造集成电路封装系统的方法，包括：在连接载体的载体顶侧上形成具有基底器件焊盘和基底互连焊盘的连接载体; 将基座集成电路连接到基座装置焊盘并安装在载体顶侧上; 将底座垂直互连直接安装在基底互连焊盘上; 将基底封装衬底附接到基底集成电路并直接在基底垂直互连上; 在基底封装衬底，基底器件焊盘和基底互连焊盘上形成基底封装; 以及使用与基底封装衬底相对部分地露出的基底器件焊盘和基底互连焊盘去除连接载体的一部分。

公开(公告)号：US07985672B2

公开(公告)日：2011-07-26

申请号：US11946056

申请日：2007-11-28

申请人： Poh Leng Eu ,  Lan Chu Tan ,  Cheng Qiang Cui

发明人： Poh Leng Eu ,  Lan Chu Tan ,  Cheng Qiang Cui

IPC分类号： H01L21/44

CPC分类号： H05K3/3478 ,  B23K35/001 ,  B23K35/007 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/1112 ,  H01L2224/1133 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13076 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3841 ,  H05K3/3436 ,  H05K2201/10242 ,  H05K2203/041 ,  H05K2203/043 ,  Y02P70/613 ,  Y10T29/49213 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A method of attaching a solder ball to a bonding pad includes disposing flux on the bonding pad, attaching a conductive metal ring to the pad using the flux, and placing the solder ball in the ring. A reflow operation is performed that secures the ring to the pad and melts the solder ball into and around the ring. A solder joint is formed between solder ball and the pad, with the ring secured within the ball. Use of the ring allows for higher stand-off height to be achieved with similar solder ball size, without having to use bigger ball size as in the conventional method, which causes solder ball bridging. With higher stand-off height, better board level reliability performance can be obtained.

摘要翻译： 将焊球附接到焊盘的方法包括在焊盘上设置焊剂，使用焊剂将导电金属环附接到焊盘，并将焊球放置在环中。 执行回流操作，其将环固定到焊盘并将焊球熔化到环中和环周围。 在焊球和焊盘之间形成焊接接头，其中环固定在球内。 使用环允许以类似的焊球尺寸实现更高的间隔高度，而不需要像常规方法那样使用更大的球尺寸，这导致焊球桥接。 具有较高的间隔高度，可以获得更好的板级可靠性性能。