摘要:
A circuit interconnecting substrate manufacturing method includes depositing a first layer of metallic powder on top of a carrier, and then forming a first layer of electrically conductive traces from the first layer of metallic powder. A second layer of metallic powder is then deposited onto at least one region of the first layer of electrically conductive traces. Then a second layer of electrically conductive traces is formed from the second layer of metallic powder and each trace of the second layer is electrically coupled to a trace of the first layer. An insulating material is deposited onto the carrier to provide an insulating substrate that supports the traces. The method does not require the use of any wet chemicals or chemical etching steps.
摘要:
A method of assembling semiconductor devices with semiconductor dies of alternative different configurations uses the same substrate panel. The dies of the selected configuration are placed in an array, mounted, and connected to internal electrical contact pads on a first face of the panel using main fiducial markings and an array of subsidiary fiducial markings corresponding universally to arrays of semiconductor dies of the different alternative configurations. The pitch of the subsidiary fiducial markings is equal to the spacing between adjacent rows of the internal electrical contact pads on the panel and is a sub-multiple of the pitch of the array of dies.
摘要:
A method of making an integrated circuit package, such as a ball grid array, includes providing a flexible tape that has first and second sets of bond pads on respective first and second surfaces thereof. A carrier is attached to the first surface of the flexible tape. Then conductive pillars are formed on the second set of bond pads and an intermediate layer of polymeric compound is deposited on the second surface of the flexible tape. After the compound has cured, a surface of the intermediate layer is ground to expose ends of the conductive pillars to form a sub-assembly comprising the flexible tape and the intermediate layer. Then the carrier is removed from the sub-assembly, thereby creating an interposer. The interposer is attached to a substrate and at least one die is attached to the interposer.
摘要:
A method of assembling semiconductor devices with semiconductor dies of alternative different configurations uses the same substrate panel. The dies of the selected configuration are placed in an array, mounted, and connected to internal electrical contact pads on a first face of the panel using main fiducial markings and an array of subsidiary fiducial markings corresponding universally to arrays of semiconductor dies of the different alternative configurations. The pitch of the subsidiary fiducial markings is equal to the spacing between adjacent rows of the internal electrical contact pads on the panel and is a sub-multiple of the pitch of the array of dies.
摘要:
A semiconductor pressure sensor device having a pressure-sensing die electrically connected to a microcontrol unit (MCU) using either through silicon vias (TSVs) or flip-chip bumps. An active surface of the pressure-sensing die is in facing relationship with the MCU. These embodiments avoid the need to used bonds to electrically connect the pressure-sensing die to the MCU, thereby saving time, reducing size, and reducing cost.
摘要:
A method for forming a pass-through layer of an interposer of a packaged semiconductor device in which conducting structures are extended between first and second ends of a casing. The conducting structures are subsequently encapsulated in a molding compound to form a molded bar, and the molded bar is sliced to obtain the pass-through layer. The pass-through layer has conducting vias, each corresponding to a sliced section of one of the conducting structures. The cost of pass-through layers formed in this manner may be less than that of comparable silicon or glass pass-through layers.
摘要:
A semiconductor package includes a first lead frame type having a first type of package leads and a pre-molded portion, and a second lead frame type having a second type of package leads that surround a die pad and are supported by the pre-molded portion. An integrated circuit is attached to the die pad and electrically connected to the first and second types of leads with bond wires. A mold compound, which forms a mold cap, covers the first and second lead frame types, the integrated circuit and the bond wires. The first lead frame type may be a QFP type and the second lead frame type may be a QFN type.
摘要:
A pressure sensor device includes a gel retainer that is mounted or formed on a substrate. The gel retainer has a cavity and a pressure sensing die is mounted inside the cavity. The die is electrically connected to one or more other package elements. A pressure-sensitive gel material is dispensed into the cavity to cover an active region of the pressure sensing die. A mold compound is applied on an upper surface of the substrate outside of the gel retainer.
摘要:
A semiconductor device is assembled where a signal redistribution layer is formed over a partially encapsulated semiconductor die. The distribution layer is formed by selectively coating a first electrical insulating layer over an active surface of the die and a surrounding portion of the encapsulation material, where die bonding pads on the active surface of the die are exposed through access apertures in the first electrical insulating layer. A layer of metallic powder is deposited onto the first insulating layer and then electrically conductive runners are formed from the layer of metallic powder. The runners are coated with a further electrical insulating layer. A mounting area of each runner is exposed through an external connection aperture. Solder balls may be attached to the mounting areas.
摘要:
A pillar bump, such as a copper pillar bump, is formed on an integrated circuit chip by applying a metallic powder over a conductive pad on a surface of the chip. The metallic powder is selectively spot-lasered to form the pillar bump. Any remaining unsolidified metallic powder may be removed from the surface of the chip. This process may be repeated to increase the bump height. Further, a solder cap may be formed on an outer surface of the pillar bump.