公开(公告)号：US20130042949A1

公开(公告)日：2013-02-21

申请号：US13571781

申请日：2012-08-10

申请人： Hideyuki Sagawa ,  Seigi Aoyama ,  Hiromitsu Kuroda ,  Toru Sumi ,  Keisuke Fujito ,  Ryohei Okada ,  Shinichi Masui

发明人： Hideyuki Sagawa ,  Seigi Aoyama ,  Hiromitsu Kuroda ,  Toru Sumi ,  Keisuke Fujito ,  Ryohei Okada ,  Shinichi Masui

IPC分类号： C22F1/08 ,  B21D31/00

CPC分类号： C22F1/08 ,  B21C1/003 ,  C22C9/00 ,  H01B1/026 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45639 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01012 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01025 ,  H01L2924/01024 ,  H01L2924/01016 ,  H01L2924/01008 ,  H01L2924/01205

摘要： A method of manufacturing a soft-dilute-copper-alloy material includes a plastic working of a soft-dilute-copper-alloy including an additional element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn and Cr, and a balance consisting of copper and inevitable impurity, and a subsequent annealing treatment of the soft-dilute-copper-alloy. A working ratio in the plastic working before the annealing treatment is not less than 50%.

摘要翻译： 软 - 稀铜合金材料的制造方法包括：软 - 稀铜合金的塑性加工，其包含选自Ti，Mg，Zr，Nb，Ca，V，Ni， Mn和Cr，余量由铜和不可避免的杂质组成，以及随后的软 - 稀铜铜合金的退火处理。 退火处理前塑料加工的加工率不小于50％。

公开(公告)号：US08247911B2

公开(公告)日：2012-08-21

申请号：US12445789

申请日：2008-01-15

申请人： Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

发明人： Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/78 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43821 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01001 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/01049 ,  H01L2924/01006

摘要： Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 μm, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

摘要翻译： 提供一种接合线的接合结构及其形成方法，其可以解决多层铜线的实际应用中的现有技术的问题，提高球部的成形性和接合特性，提高楔连接的接合强度 ，具有较高的工业生产率。 主要由铜构成的接合线以及铜以外的导电性金属的浓度高的浓缩层形成在球接合部。 浓缩层形成在球接合部分附近或其界面处。 导电性金属的浓度为0.05〜20摩尔％的区域的厚度大于等于0.1微米，并且浓缩层中的导电性金属的浓度优选为平均浓度的5倍 导电金属在浓缩层以外的球接合部分的浓度。

公开(公告)号：US08084870B2

公开(公告)日：2011-12-27

申请号：US11690908

申请日：2007-03-26

申请人： Sangdo Lee ,  Yonksuk Kwon ,  Bin Cai

发明人： Sangdo Lee ,  Yonksuk Kwon ,  Bin Cai

IPC分类号： H01L23/48

CPC分类号： H01L24/49 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/29101 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/85205 ,  H01L2224/85447 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20107 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/00015 ,  H01L2924/00013 ,  H01L2224/83205 ,  H01L2924/01006

摘要： The device of this invention includes a semiconductor die attached to a bare copper lead frame and electrically coupled to a lead by a metal wire coated with a metallic material. The device would function similarly to devices where the lead frames were coated with other metallic materials, but at lower costs because instead of plating the lead frame the wire is plated. The wire can be either gold or aluminum. When the wire is gold, the coating may be silver or other suitable metallic materials. When the wire is aluminum, the coating may be nickel, palladium, or other suitable metals.

摘要翻译： 本发明的装置包括一个半导体管芯，该半导体管芯附着在一个裸铜引线框架上，并通过镀金属材料的金属线电连接到引线上。 该装置的功能与其他金属材料涂覆引线框架的设备类似，但成本较低，因为不用电镀引线框架，导线被镀覆。 电线可以是金或铝。 当导线是金时，涂层可以是银或其它合适的金属材料。 当电线是铝时，涂层可以是镍，钯或其它合适的金属。

公开(公告)号：US20110011619A1

公开(公告)日：2011-01-20

申请号：US12669612

申请日：2008-12-03

申请人： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

发明人： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

IPC分类号： H01B5/00

CPC分类号： C22C5/02 ,  B23K35/0222 ,  B23K35/302 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C9/01 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45683 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48486 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/3025 ,  H01L2924/01004 ,  H01L2924/01001 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01202 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/20656 ,  H01L2924/20658 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/0104 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

摘要： It is an object of the present invention to provide a highly-functional bonding wire which can reduce damages at a neck part, has good linearity of loops, stability of loop heights, and stability of bonded shape of a bonding wire, and can cope with semiconductor packaging techniques, such as low looping, thinning, achievement of a fine pitch, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.

摘要翻译： 本发明的目的是提供一种可以减少颈部损伤的高功能性接合线，线圈线性良好，线圈高度稳定性和接合线的接合形状的稳定性，能够应付 半导体封装技术，如低循环，变薄，实现细间距，以及三维封装。 半导体器件接合线包括由导电金属形成的芯部件和主要由与芯部件不同的面心立方金属形成的表皮层。 在表皮层表面的长度方向的结晶取向中的<100>取向的百分比大于或等于50％。

公开(公告)号：US07833832B2

公开(公告)日：2010-11-16

申请号：US12412906

申请日：2009-03-27

申请人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree

发明人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree

IPC分类号： H01L21/00 ,  H01L29/06 ,  H05K1/03

CPC分类号： H01L23/3114 ,  B33Y70/00 ,  B81B7/0006 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/481 ,  H01L24/48 ,  H01L27/14618 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/45015 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/4813 ,  H01L2224/48471 ,  H01L2224/85045 ,  H01L2224/85207 ,  H01L2224/85951 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  Y10T29/49147 ,  H01L2924/20752 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A method for fabricating a semiconductor component with through interconnects can include the steps of providing a semiconductor substrate with substrate contacts, and forming openings from a backside of the substrate aligned with the substrate contacts. The method can also include the steps of providing an interposer substrate (or alternately a second semiconductor substrate), forming projections on the interposer substrate (or on the second semiconductor substrate), and forming conductive vias in the projections. The method can also include the steps of placing the projections in physical contact with the openings, and placing the conductive vias in electrical contact with the substrate contacts. The method can also include the steps of bonding the conductive vias to the substrate contacts, and forming terminal contacts on the interposer substrate (or alternately on one of the semiconductor substrates) in electrical communication with the conductive vias.

摘要翻译： 用于通过互连制造半导体部件的方法可以包括以下步骤：提供具有衬底触点的半导体衬底，以及从与衬底触点对准的衬底的背面形成开口。 该方法还可以包括提供插入器衬底（或者替代地第二半导体衬底）的步骤，在插入器衬底（或第二半导体衬底上）上形成突起，并在突起中形成导电通孔。 该方法还可以包括以下步骤：将突起放置在与开口物理接触的位置，并且将导电通孔放置在与基板触点电接触的位置。 该方法还可以包括以下步骤：将导电通孔接合到基板触点，以及在内导体基板（或者替代地在其中一个半导体基板上）上形成与导电通孔电连通的端子触点。

公开(公告)号：US07659612B2

公开(公告)日：2010-02-09

申请号：US11409638

申请日：2006-04-24

申请人： David R. Hembree ,  Alan G. Wood

发明人： David R. Hembree ,  Alan G. Wood

IPC分类号： H01L23/04

CPC分类号： H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

摘要： A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) attached to the substrate contact. The through wire interconnect provides a multi level interconnect having contacts on opposing first and second sides of the semiconductor substrate. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via having a bonded connection with the substrate contact, a first contact on the wire proximate to the first side, and a second contact on the wire proximate to the second side. The through wire interconnect (TWI) also includes a polymer layer which partially encapsulates the through wire interconnect (TWI) while leaving the first contact exposed. The semiconductor component can be used to fabricate stacked systems, module systems and test systems. A method for fabricating the semiconductor component can include a film assisted molding process for forming the polymer layer.

摘要翻译： 半导体部件包括具有衬底接触的半导体衬底和附着到衬底触点的通线互连（TWI）。 通线互连提供了在半导体衬底的相对的第一和第二侧上具有触点的多电平互连。 通线互连（TWI）包括穿过基板触点和基板的通孔，通孔中的导线与基板接触具有接合连接，接近第一侧的导线上的第一触点和第二触点 电线靠近第二侧。 通线互连（TWI）还包括聚合物层，其部分地封装通孔互连（TWI），同时使第一触点暴露。 半导体部件可用于制造堆叠系统，模块系统和测试系统。 制造半导体部件的方法可以包括用于形成聚合物层的膜辅助成型工艺。

公开(公告)号：US20070235887A1

公开(公告)日：2007-10-11

申请号：US10550548

申请日：2004-10-13

申请人： Shingo Kaimori ,  Tsuyoshi Nonaka ,  Masanori Ioka

发明人： Shingo Kaimori ,  Tsuyoshi Nonaka ,  Masanori Ioka

IPC分类号： H01L23/52 ,  H01B5/00

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45649 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45663 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/4567 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45678 ,  H01L2224/45683 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48839 ,  H01L2224/78301 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/01204 ,  H01L2924/01206 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01026 ,  H01L2924/01008 ,  H01L2924/01016 ,  H01L2924/01001 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/00015 ,  H01L2924/01076 ,  H01L2924/01006

摘要： A bonding wire comprising a core and a coating layer formed on the core, wherein the coating layer is formed from a metal having a higher melting point than the core, and further has at least one of the following characteristics; 1. the wet contact angle with the coating layer when the core is melted is not smaller than 20 degrees; 2. when the bonding wire is hung down with its end touching a horizontal surface, and is cut at a point 15 cm above the end and thus let drop onto the horizontal surface, the curvature radius of the formed arc is 35 mm or larger; 3. the 0.2% yield strength is not smaller than 0.115 mN/μm2 but not greater than 0.165 mN/μm2; or 4. the Vickers hardness of the coating layer is 300 or lower.

摘要翻译： 一种接合线，其包括芯和形成在所述芯上的涂层，其中所述涂层由具有比所述芯更高的熔点的金属形成，并且还具有以下特征中的至少一个; 当芯熔化时与涂层的湿接触角不小于20度; 2.当接合线悬挂时，其端部接触水平表面，并在端部上方15厘米处切割，因此落在水平面上，所形成的弧的曲率半径为35毫米或更大; 0.2％的屈服强度不小于0.115mN / m 2，但不大于0.165mN / m 2。 或4.涂层的维氏硬度为300以下。

公开(公告)号：US20070141755A1

公开(公告)日：2007-06-21

申请号：US11675534

申请日：2007-02-15

申请人： Christoph Luechinger

发明人： Christoph Luechinger

IPC分类号： H01L21/00

CPC分类号： H01L23/498 ,  B23K20/008 ,  B23K2101/32 ,  B23K2101/38 ,  H01L23/4952 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45032 ,  H01L2224/45033 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/49175 ,  H01L2224/78316 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20755 ,  H01L2924/30107 ,  H01L2224/45655 ,  H01L2224/45644 ,  H01L2224/45639 ,  H01L2224/45647 ,  H01L2924/0665 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2924/01049

摘要： A flexible conductive ribbon is ultrasonically bonded to the surface of a die and terminals from a lead frame of a package. Multiple ribbons and/or multiple bonded areas provide various benefits, such as high current capability, reduced spreading resistance, reliable bonds due to large contact areas, lower cost and higher throughput due to less areas to bond and test.

摘要翻译： 柔性导电带超声波地结合到管芯的表面和端子从封装的引线框架。 多个带和/或多个粘合区域提供各种益处，例如高电流能力，降低的铺展电阻，由于接触面积大而导致的可靠接合，较低的成本和较高的通量，由于较少的粘结和测试区域。

公开(公告)号：US07032311B2

公开(公告)日：2006-04-25

申请号：US10179560

申请日：2002-06-25

申请人： Eli Razon

发明人： Eli Razon

IPC分类号： H01B19/00

CPC分类号： H01L24/85 ,  H01L21/4825 ,  H01L23/49811 ,  H01L24/10 ,  H01L24/13 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45611 ,  H01L2224/45616 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48455 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/78302 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01R13/2407 ,  H05K3/325 ,  H05K2201/10265 ,  H05K2201/10719 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A new and improved electrical connector is provided for Ball Grid Array (BGA) devices and Direct Chip Attach (DCA) devices that solves the prior art problems of mismatch in the coefficient of thermal between a semiconductor die and its substrate, PC board or carrier. The electrical connector consists of a resilient loop of wire that is permanently wire bonded at a first and a second bond position to an electrode or contact pad of a die or an interposer. The closed loop of wire is stable in the X and Y direction and resilient in the Z direction which enables the wire bonded die or interposer to be temporarily attached to a carrier or test board for all forms of tests as well as being removable and reworkable even after being permanently soldered in place on a substrate or PC board. Since the loop shaped connectors are resilient in X, Y and Z directions, the die or interposer may be clamped onto a PC board or substrate to provide a lead free electrical connection that does not require any underfill. The loop size may be made with highly conductive and/or plated (coated) wire in sizes from about 2.5 mils diameter up to about 30 mils using wire having a diameter of about 1.0 mils up to 5.0 mils to replace prior art balls used on pads of about 3 mils size or greater.

公开(公告)号：US20040188833A1

公开(公告)日：2004-09-30

申请号：US10355593

申请日：2003-01-31

发明人： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

IPC分类号： H01L023/34

CPC分类号： H05K1/0233 ,  H01L23/4952 ,  H01L23/66 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/745 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2224/432 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/451 ,  H01L2224/45117 ,  H01L2224/45118 ,  H01L2224/45123 ,  H01L2224/45124 ,  H01L2224/45138 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/4516 ,  H01L2224/45163 ,  H01L2224/45166 ,  H01L2224/45179 ,  H01L2224/45181 ,  H01L2224/45188 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45617 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45663 ,  H01L2224/45666 ,  H01L2224/45679 ,  H01L2224/45681 ,  H01L2224/45686 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/745 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03H2001/0092 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01008 ,  H01L2924/01009 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2224/45015 ,  H01L2924/207

摘要： In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (nullm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.

摘要翻译： 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是厚度为0.3〜20（μm）范围的薄膜磁性物质，并且设置在各端子（19）的整个表面上，覆盖安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。