公开(公告)号：US12002725B2

公开(公告)日：2024-06-04

申请号：US18199215

申请日：2023-05-18

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Ji Young Chung ,  Dong Joo Park ,  Jin Seong Kim ,  Jae Sung Park ,  Se Hwan Hong

IPC分类号： H01L23/15 ,  G06V40/13 ,  H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495 ,  H01L23/498

CPC分类号： H01L23/15 ,  G06V40/1329 ,  H01L24/48 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/4952 ,  H01L23/49805 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48165 ,  H01L2224/48227 ,  H01L2224/48992 ,  H01L2224/48997 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2224/85 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/05647 ,  H01L2924/00015 ,  H01L2224/05624 ,  H01L2924/00015 ,  H01L2224/05639 ,  H01L2924/00015 ,  H01L2224/05644 ,  H01L2924/00015 ,  H01L2224/05655 ,  H01L2924/00015 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/92247 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/2919 ,  H01L2924/00014 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise an interconnection structure, for example a bond wire, at least a portion of which extends into a dielectric layer utilized to mount a plate, and/or that comprise an interconnection structure that extends upward from the semiconductor die at a location that is laterally offset from the plate.

公开(公告)号：US20230395558A1

公开(公告)日：2023-12-07

申请号：US17829601

申请日：2022-06-01

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Wu-Der YANG

IPC分类号： H01L23/00

CPC分类号： H01L24/48 ,  H01L2924/30101 ,  H01L2924/182 ,  H01L24/73 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/73265 ,  H01L2224/48091 ,  H01L2224/48011 ,  H01L2224/48229 ,  H01L2224/48992 ,  H01L2224/48997

摘要： A semiconductor device includes a substrate; an electronic component disposed on the substrate; a bonding wire comprising a first terminal connected to the electronic component and a second terminal connected to the substrate; and a supporter disposed between the first terminal and the second terminal of the bonding wire.

公开(公告)号：US20170338163A1

公开(公告)日：2017-11-23

申请号：US15670589

申请日：2017-08-07

申请人： Amkor Technology, Inc.

发明人： Ji Young Chung ,  Dong Joo Park ,  Jin Seong Kim ,  Jae Sung Park ,  Se Hwan Hong

IPC分类号： H01L23/15 ,  G06K9/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/495 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L23/15 ,  G06K9/00053 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/4952 ,  H01L23/49805 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48165 ,  H01L2224/48227 ,  H01L2224/48992 ,  H01L2224/48997 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00015 ,  H01L2924/00012

摘要： A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise an interconnection structure, for example a bond wire, at least a portion of which extends into a dielectric layer utilized to mount a plate, and/or that comprise an interconnection structure that extends upward from the semiconductor die at a location that is laterally offset from the plate.

公开(公告)号：US20150125996A1

公开(公告)日：2015-05-07

申请号：US14595638

申请日：2015-01-13

申请人： Doojin Kim ,  Youngsik Kim ,  Kitaik Oh ,  Sungbok Hong

发明人： Doojin Kim ,  Youngsik Kim ,  Kitaik Oh ,  Sungbok Hong

IPC分类号： H01L23/00

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L25/0657 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/4809 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48992 ,  H01L2224/48997 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85365 ,  H01L2224/85416 ,  H01L2224/85951 ,  H01L2224/85986 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/48455

摘要： A semiconductor package comprises a board including a board pad, a plurality of semiconductor chips mounted on the board, the semiconductor chips including chip pads. Bumps are disposed on the chip pads, respectively, and a wire is disposed between the chip pads and the bumps. The wire electrically connects the chip pads of the plurality of semiconductor chips and the board pad to each other.

摘要翻译： 半导体封装包括板，其包括板焊盘，安装在板上的多个半导体芯片，包括芯片焊盘的半导体芯片。 凸块分别设置在芯片焊盘上，并且引线布置在芯片焊盘和凸块之间。 导线将多个半导体芯片的芯片焊盘与板焊盘彼此电连接。

公开(公告)号：US20130299983A1

公开(公告)日：2013-11-14

申请号：US13945392

申请日：2013-07-18

申请人： Micron Technology Inc.

发明人： Alan G. Wood ,  David R. Hembree

IPC分类号： H01L23/00 ,  H01L23/48

CPC分类号： H01L23/02 ,  B33Y70/00 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/48 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/6834 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13024 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/4824 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/49429 ,  H01L2224/78301 ,  H01L2224/85001 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85121 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06596 ,  H01L2924/00015 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012

摘要： A through wire interconnect for a semiconductor substrate includes a via extending through the semiconductor substrate from the first side to the second side thereof; a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side of the semiconductor substrate; a dielectric material in the via configured to electrically insulate the wire from the semiconductor substrate; a bonding member bonded to the first end of the wire and to the substrate contact configured to secure the wire to the substrate contact; and a contact on the second end of the wire.

摘要翻译： 用于半导体衬底的通线互连包括从第一侧延伸穿过半导体衬底到第二侧的通孔; 所述通孔中的导线具有第一端，所述第一端具有与所述衬底接触的接合连接，以及靠近所述半导体衬底的第二侧的第二端; 所述通孔中的电介质材料被配置为使所述导线与所述半导体衬底电绝缘; 接合构件，其接合到所述导线的所述第一端和所述衬底接触件，被配置为将所述导线固定到所述衬底接触件; 和电线第二端的触点。

公开(公告)号：US08237295B2

公开(公告)日：2012-08-07

申请号：US13052368

申请日：2011-03-21

申请人： Yuichi Sano ,  Takashi Imoto ,  Naoto Takebe ,  Katsuhiro Ishida ,  Tomomi Honda ,  Yasushi Kumagai

发明人： Yuichi Sano ,  Takashi Imoto ,  Naoto Takebe ,  Katsuhiro Ishida ,  Tomomi Honda ,  Yasushi Kumagai

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/40

CPC分类号： H01L24/85 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48455 ,  H01L2224/48476 ,  H01L2224/4848 ,  H01L2224/48599 ,  H01L2224/48992 ,  H01L2224/48997 ,  H01L2224/4911 ,  H01L2224/49175 ,  H01L2224/49429 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2224/05599

摘要： According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part and the second electrode. A thickness of a turned-back portion at an end of the wire on a side opposite to the second electrode is smaller than a diameter of the wire.

摘要翻译： 根据一个实施例，半导体器件包括第一半导体元件，第一电极，球形部分，第二电极和线。 第一电极电连接到第一半导体元件。 球部设置在第一电极上。 导线连接球部和第二电极。 在与第二电极相反的一侧的线的端部处的折回部分的厚度小于导线的直径。

公开(公告)号：US20120181689A1

公开(公告)日：2012-07-19

申请号：US13430577

申请日：2012-03-26

申请人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L23/485

CPC分类号： H01L23/4952 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/3185 ,  H01L23/49541 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02333 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/056 ,  H01L2224/1134 ,  H01L2224/1308 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/4848 ,  H01L2224/48992 ,  H01L2224/49111 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/83805 ,  H01L2224/85001 ,  H01L2224/85051 ,  H01L2224/85951 ,  H01L2224/85986 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06551 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/85186 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2224/45099 ,  H01L2224/4554

摘要： A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A recessed region with angled or vertical sidewall is formed in the peripheral area. A conductive layer is formed in the recessed region. A first stud bump is formed over a contact pad of the semiconductor die. A second stud bump is formed over the first conductive layer within the recessed region. A bond wire is formed between the first and second stud bumps. A third stud bump is formed over the bond wire and first stud bump. A dicing channel partially formed through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the bond wire and stud bumps.

摘要翻译： 半导体晶片包含多个半导体管芯，每个半导体管芯具有围绕管芯的周边区域。 具有倾斜或垂直侧壁的凹陷区域形成在周边区域中。 在凹陷区域形成导电层。 在半导体管芯的接触焊盘上形成第一螺柱凸块。 在凹陷区域内的第一导电层上方形成第二凸起凸块。 在第一和第二突起之间形成接合线。 在接合线和第一凸起凸起上形成第三个凸起凸块。 通过外围区域部分地形成的切割通道。 半导体晶片经历对切割通道的后研磨，以切割半导体晶片并分离半导体管芯。 半导体管芯可以配置在具有其它部件的半导体封装中，并且通过接合线和柱形凸起电互连。

公开(公告)号：US20120043670A1

公开(公告)日：2012-02-23

申请号：US13285490

申请日：2011-10-31

申请人： David R. Hembree ,  Alan G. Wood

发明人： David R. Hembree ,  Alan G. Wood

IPC分类号： H01L25/00 ,  H01L21/60 ,  H01L21/58

CPC分类号： H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

摘要： A semiconductor module system includes a module substrate and first and second semiconductor components stacked on the module substrate. The stacked semiconductor components include through wire interconnects that form an internal signal transmission system for the module system. Each through wire interconnect includes a via, a wire in the via and first and second contacts on the wire.

摘要翻译： 半导体模块系统包括模块基板和堆叠在模块基板上的第一和第二半导体部件。 层叠的半导体部件包括形成用于模块系统的内部信号传输系统的通线互连。 每个通线互连包括通孔，通孔中的导线以及导线上的第一和第二触点。

公开(公告)号：US20110070729A1

公开(公告)日：2011-03-24

申请号：US12923085

申请日：2010-08-31

申请人： Isao Kurita

发明人： Isao Kurita

IPC分类号： H01L21/60

CPC分类号： H01L24/85 ,  H01L23/4952 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/13144 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48992 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85148 ,  H01L2224/85947 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/078 ,  H01L2924/14 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512

摘要： A method of manufacturing a semiconductor device, includes: preparing a semiconductor IC chip and an external electrode terminal which is positioned away from the semiconductor IC chip, wherein the semiconductor IC chip has first and second electrode pads thereon, the second electrode pad being positioned between the first electrode pad and the external electrode terminal; connecting the first electrode pad and the external electrode terminal by a loop-like wire; and pressing a portion of the loop-like wire toward the semiconductor IC chip, thereby connecting the portion of the loop-like wire with the second electrode pad.

摘要翻译： 一种制造半导体器件的方法，包括：制备半导体IC芯片和远离半导体IC芯片的外部电极端子，其中半导体IC芯片在其上具有第一和第二电极焊盘，第二电极焊盘位于 第一电极焊盘和外部电极端子; 通过环状线连接第一电极焊盘和外部电极端子; 并且将所述环状线的一部分按压到所述半导体IC芯片，由此将所述环状导线的所述部分与所述第二电极焊盘连接。

公开(公告)号：US07883908B2

公开(公告)日：2011-02-08

申请号：US12581255

申请日：2009-10-19

申请人： David R. Hembree ,  Alan G. Wood

发明人： David R. Hembree ,  Alan G. Wood

IPC分类号： H01L21/60

CPC分类号： H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

摘要： A method for fabricating a semiconductor component with an encapsulated through wire interconnect includes the steps of providing a substrate having a first side, a second side and a substrate contact; forming a via in the substrate contact and the substrate to the second side; placing a wire in the via; forming a first contact on the wire proximate to the first side and a second contact on the wire proximate to the second side; and forming a polymer layer on the first side leaving the first contact exposed. The polymer layer can be formed using a film assisted molding process including the steps of: forming a mold film on tip portions of the bonding members, molding the polymer layer, and then removing the mold film to expose the tip portions of the bonding members. The through wire interconnect provides a multi level interconnect having contacts on opposing sides of the semiconductor substrate.

摘要翻译： 一种用封装的直通线互连制造半导体部件的方法包括以下步骤：提供具有第一面，第二面和基板接触的基板; 在基板接触中形成通孔，将基板形成到第二面; 将电线放在通孔中; 在靠近第一侧的导线上形成第一触点，并且在靠近第二侧的导线上形成第二触点; 并在第一侧上形成聚合物层，留下暴露的第一接触。 聚合物层可以使用薄膜辅助成型方法形成，包括以下步骤：在粘合部件的顶端部分上形成模具膜，模制聚合物层，然后移除模具膜以暴露粘合部件的末端部分。 通线互连提供了在半导体衬底的相对侧上具有触点的多电平互连。