公开(公告)号：US20170182600A1

公开(公告)日：2017-06-29

申请号：US15116275

申请日：2014-02-04

Applicant: Senju Metal Industry Co., Ltd.

Inventor： Hiroyoshi Kawasaki ,  Takahiro Roppongi ,  Daisuke Soma ,  Isamu Sato

IPC: B23K35/02 ,  C22F1/10 ,  B23K35/30 ,  C22C19/03 ,  B22F1/00 ,  B22F9/08 ,  C22F1/08 ,  C22C9/00

CPC classification number: B23K35/0244 ,  B22F1/0003 ,  B22F1/0048 ,  B22F1/025 ,  B22F9/08 ,  B22F9/082 ,  B22F9/14 ,  B22F2009/0848 ,  B22F2301/10 ,  B22F2301/15 ,  B22F2998/10 ,  B22F2999/00 ,  B23K1/0016 ,  B23K1/008 ,  B23K3/0623 ,  B23K35/302 ,  B23K35/3033 ,  B23K2101/42 ,  C22C9/00 ,  C22C19/03 ,  C22F1/08 ,  C22F1/10 ,  H01L23/49816 ,  H01L23/556 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13117 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13138 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13163 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13172 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13179 ,  H01L2224/1318 ,  H01L2224/13181 ,  H01L2224/13183 ,  H01L2224/13184 ,  H01L2224/132 ,  H01L2224/13211 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13305 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13323 ,  H01L2224/13324 ,  H01L2224/13338 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/13357 ,  H01L2224/1336 ,  H01L2224/13363 ,  H01L2224/13364 ,  H01L2224/13366 ,  H01L2224/13369 ,  H01L2224/1337 ,  H01L2224/13371 ,  H01L2224/13372 ,  H01L2224/13373 ,  H01L2224/13376 ,  H01L2224/13378 ,  H01L2224/13379 ,  H01L2224/1338 ,  H01L2224/13381 ,  H01L2224/13383 ,  H01L2224/13384 ,  H01L2224/1339 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1369 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81011 ,  H01L2924/381 ,  H01L2924/3841 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2203/041 ,  B22F2202/13 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01051 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01082 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0109 ,  H01L2924/01033 ,  H01L2924/00014 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/01048 ,  H01L2924/01016 ,  H01L2924/01013 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/0106 ,  H01L2924/01071 ,  H01L2924/01069 ,  H01L2924/01021 ,  H01L2924/01068 ,  H01L2924/01059 ,  H01L2924/01067 ,  H01L2924/01066 ,  H01L2924/01065 ,  H01L2924/01064 ,  H01L2924/01061 ,  H01L2924/01057 ,  H01L2924/0102 ,  H01L2924/01063 ,  H01L2924/0107 ,  H01L2924/01058 ,  H01L2924/01038 ,  H01L2924/01056 ,  H01L2924/01052 ,  H01L2924/01076 ,  H01L2924/01072 ,  H01L2924/01043 ,  H01L2924/01004

Abstract: Produced is a metal ball which suppresses an emitted α dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

公开(公告)号：US20160351461A1

公开(公告)日：2016-12-01

申请号：US15162647

申请日：2016-05-24

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yoon Man LEE ,  So Yoon KIM

IPC: H01L23/29 ,  C08K3/34 ,  C08K3/30 ,  C08K3/22 ,  C08K3/18 ,  H01L23/31 ,  C08K13/02 ,  H01L23/34 ,  H01L21/56 ,  H01L23/544 ,  H01L23/00 ,  C08K3/36 ,  C08K5/3417

CPC classification number: H01L23/295 ,  H01L21/56 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/34 ,  H01L23/544 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L2223/54406 ,  H01L2223/54486 ,  H01L2224/32225 ,  H01L2224/3315 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48225 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2224/83101 ,  H01L2224/92147 ,  H01L2924/00014 ,  H01L2924/01003 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01048 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01071 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0108 ,  H01L2924/01081 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/06 ,  H01L2924/0665 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/186 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: An epoxy resin composition for encapsulating a semiconductor device and a semiconductor device encapsulated by the epoxy resin composition, the composition including a base resin; a filler; a colorant; and a thermochromic pigment, wherein a color of the thermochromic pigment is irreversibly changed when a temperature thereof exceeds a predetermined temperature.

Abstract translation: 一种用于封装半导体器件的环氧树脂组合物和由环氧树脂组合物包封的半导体器件，该组合物包括基础树脂; 填料; 着色剂 和热变色颜料，其中当其变温超过预定温度时，热变色颜料的颜色不可逆地改变。

公开(公告)号：US09087930B2

公开(公告)日：2015-07-21

申请号：US14274599

申请日：2014-05-09

Applicant: STATS ChipPAC, Ltd.

Inventor： Yaojian Lin ,  Pandi C. Marimuthu ,  Kang Chen ,  Hin Hwa Goh ,  Yu Gu ,  Il Kwon Shim ,  Rui Huang ,  Seng Guan Chow ,  Jianmin Fang ,  Xia Feng

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L23/3114 ,  H01L21/31 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L21/76877 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/214

Abstract: A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure.

Abstract translation: 半导体器件具有形成在半导体管芯的表面上的半导体管芯和导电层。 可以在半导体管芯中形成第一通道。 密封剂沉积在半导体管芯上。 可以在密封剂中形成第二通道。 在半导体管芯和第一导电层上形成第一绝缘层并进入第一沟道。 第一绝缘层延伸到第二通道中。 第一绝缘层的拉伸强度大于150MPa，伸长率在35-150％之间，厚度为2-30微米。 在形成第一绝缘层之前，可以在半导体管芯上方形成第二绝缘层。 在半导体管芯和密封剂上形成互连结构。 互连结构电连接到第一导电层。 第一绝缘层在形成互连结构期间提供应力释放。

公开(公告)号：US20150108648A1

公开(公告)日：2015-04-23

申请号：US14474301

申请日：2014-09-02

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kazumichi TSUMURA ,  Kazuyuki HIGASHI

IPC: H01L23/00

CPC classification number: H01L24/09 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/89 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/05573 ,  H01L2224/05576 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08501 ,  H01L2224/80357 ,  H01L2224/80801 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/01104 ,  H01L2924/0549 ,  H01L2924/12042 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/01025 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01041 ,  H01L2924/0104 ,  H01L2924/01024 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01075 ,  H01L2924/00 ,  H01L2924/04941 ,  H01L2924/04953

Abstract: A semiconductor device includes first and second semiconductor members and a first barrier film. The first semiconductor member includes a first insulating film, and a first wiring film in the first insulating film, the surface of which is exposed in the first insulating film. The second semiconductor member includes a second insulating film, and a second wiring film in the second insulating film, the surface of which is exposed in the second insulating film. The first barrier film forms a barrier to diffusion of the material of the first wiring film into the second insulating film and is formed of a compound of metal element of the first wiring film and an element of the second insulating film in a region where the first wiring film and the second insulating film are in contact with each other at the junction interface of the first and second semiconductor members.

Abstract translation: 半导体器件包括第一和第二半导体部件和第一阻挡膜。 第一半导体部件包括第一绝缘膜和第一绝缘膜中的第一布线膜，其表面暴露在第一绝缘膜中。 第二半导体部件包括第二绝缘膜和第二绝缘膜中的第二布线膜，其表面暴露在第二绝缘膜中。 第一阻挡膜形成第一布线膜的材料扩散到第二绝缘膜中的阻挡层，并且由第一布线膜的金属元素和第二绝缘膜的元件的化合物形成在第一绝缘膜的第一 布线膜和第二绝缘膜在第一和第二半导体部件的接合界面处彼此接触。

公开(公告)号：US08975752B2

公开(公告)日：2015-03-10

申请号：US11971492

申请日：2008-01-09

Applicant: Alex Chow ,  R. David Hopkins ,  Robert J. Drost

Inventor： Alex Chow ,  R. David Hopkins ,  Robert J. Drost

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L25/065 ,  H01L23/64 ,  H01L23/00 ,  H01L25/00 ,  H04B5/00

CPC classification number: H01L23/5227 ,  H01L23/48 ,  H01L23/642 ,  H01L23/645 ,  H01L24/06 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01051 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H04B5/0012 ,  H04B5/0031 ,  H04B5/0075 ,  H04B5/0081

Abstract: A multiple access Proximity Communication system in which electrical elements on an integrated circuit chip provide the multiplexing of multiple signals to a single electrical receiving element on another chip. Multiple pads formed on one chip and receiving separate signals may be capacitively coupled to one large pad on the other chip. Multiple inductive coils on one chip may be magnetically coupled to one large coil on another chip or inductive coils on three or more chips may be used for either transmitting or receiving. The multiplexing may be based on time, frequency, or code.

Abstract translation: 一种多址接近通信系统，其中集成电路芯片上的电气元件将多个信号复用到另一芯片上的单个电接收元件。 形成在一个芯片上并接收单独信号的多个焊盘可以电容耦合到另一个芯片上的一个大焊盘。 一个芯片上的多个感应线圈可以磁耦合到另一个芯片上的一个大线圈，或者三个或更多个芯片上的感应线圈可用于发送或接收。 复用可以基于时间，频率或代码。

公开(公告)号：US08842440B2

公开(公告)日：2014-09-23

申请号：US13930617

申请日：2013-06-28

Applicant: Ibiden Co., Ltd.

Inventor： Yasushi Inagaki ,  Motoo Asai ,  Dongdong Wang ,  Hideo Yabashi ,  Seiji Shirai

IPC: H05K1/18

CPC classification number: H05K1/181 ,  H01L21/4857 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/642 ,  H01L23/645 ,  H01L24/16 ,  H01L24/17 ,  H01L25/16 ,  H01L25/162 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3511 ,  H05K1/0231 ,  H05K1/185 ,  H05K1/186 ,  H05K1/187 ,  H05K3/4602 ,  H05K3/4611 ,  H05K2201/0187 ,  H05K2201/09509 ,  H05K2201/09536 ,  H05K2201/10636 ,  H05K2201/10674 ,  H05K2203/063 ,  Y02P70/611 ,  Y10T29/435 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49146 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A method for manufacturing a printed circuit board includes forming an opening portion in a substrate, positioning chip capacitors in the opening portion of the substrate such that the chip capacitors are accommodated in the opening portion of the substrate, forming a buildup structure including an interlayer resin insulating layer and a conductive layer over a surface of the substrate and the chip capacitors accommodated in the opening portion of the substrate, and forming on a surface of the buildup structure bump structures positioned to mount an IC chip such that the chip capacitors in the opening portion of the substrate are positioned directly below the IC chip.

Abstract translation: 一种印刷电路板的制造方法，其特征在于，在基板上形成开口部，将所述基板的开口部中的芯片电容器定位，使得所述芯片电容器容纳在所述基板的开口部，形成包含层间树脂 绝缘层和在基板的表面上的导电层和容纳在基板的开口部分中的芯片电容器，并且在构成堆积结构的凸起结构的表面上形成，以便安装IC芯片，使得开口中的芯片电容器 基板的一部分直接位于IC芯片的正下方。

公开(公告)号：US20140246779A1

公开(公告)日：2014-09-04

申请号：US14274599

申请日：2014-05-09

Applicant: STATS ChipPAC, Ltd.

Inventor： Yaojian Lin ,  Pandi C. Marimuthu ,  Kang Chen ,  Hin Hwa Goh ,  Yu Gu ,  Il Kwon Shim ,  Rui Huang ,  Seng Guan Chow ,  Jianmin Fang ,  Xia Feng

IPC: H01L23/00 ,  H01L23/522

CPC classification number: H01L23/3114 ,  H01L21/31 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L21/76877 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/214

Abstract: A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure.

Abstract translation: 半导体器件具有形成在半导体管芯的表面上的半导体管芯和导电层。 可以在半导体管芯中形成第一通道。 密封剂沉积在半导体管芯上。 可以在密封剂中形成第二通道。 在半导体管芯和第一导电层上形成第一绝缘层并进入第一沟道。 第一绝缘层延伸到第二通道中。 第一绝缘层的拉伸强度大于150MPa，伸长率在35-150％之间，厚度为2-30微米。 在形成第一绝缘层之前，可以在半导体管芯上方形成第二绝缘层。 在半导体管芯和密封剂上形成互连结构。 互连结构电连接到第一导电层。 第一绝缘层在形成互连结构期间提供应力释放。

公开(公告)号：US08717772B2

公开(公告)日：2014-05-06

申请号：US12566776

申请日：2009-09-25

Applicant: Yasushi Inagaki ,  Motoo Asai ,  Dongdong Wang ,  Hideo Yabashi ,  Seiji Shirai

Inventor： Yasushi Inagaki ,  Motoo Asai ,  Dongdong Wang ,  Hideo Yabashi ,  Seiji Shirai

IPC: H05K1/18

CPC classification number: H05K1/181 ,  H01L21/4857 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/642 ,  H01L23/645 ,  H01L24/16 ,  H01L24/17 ,  H01L25/16 ,  H01L25/162 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3511 ,  H05K1/0231 ,  H05K1/185 ,  H05K1/186 ,  H05K1/187 ,  H05K3/4602 ,  H05K3/4611 ,  H05K2201/0187 ,  H05K2201/09509 ,  H05K2201/09536 ,  H05K2201/10636 ,  H05K2201/10674 ,  H05K2203/063 ,  Y02P70/611 ,  Y10T29/435 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49146 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A printed circuit board includes a core substrate having an opening portion, an electronic component provided in the opening portion of the core substrate and including a dielectric body, a first electrode formed over the dielectric body, and a second electrode formed over the dielectric body such that the dielectric body is interposed between the first electrode and the second electrode, and a resin filling a gap between the core substrate and the electronic component in the opening portion of the core substrate. The resin filling the gap includes a filler.

Abstract translation: 印刷电路板包括具有开口部分的芯基板，设置在芯基板的开口部分中的电子部件，包括电介质体，形成在绝缘体上的第一电极和形成在电介质体上的第二电极， 介电体插入在第一电极和第二电极之间，以及树脂填充芯基板的开口部分中的芯基板和电子部件之间的间隙。 填充间隙的树脂包括填料。

公开(公告)号：US20140103526A1

公开(公告)日：2014-04-17

申请号：US14134016

申请日：2013-12-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chung-Shi LIU ,  Chen-Hua YU

IPC: H01L23/532

CPC classification number: H01L23/53228 ,  H01L23/53238 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0236 ,  H01L2224/024 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13609 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01028 ,  H01L2924/0105

Abstract: A semiconductor device includes a copper-containing post overlying and electrically connected to a bond pad region. The semiconductor device further includes a protection layer on a surface of the copper-containing post, where the protection layer includes manganese.

Abstract translation: 半导体器件包括覆盖并电连接到接合焊盘区域的含铜柱。 半导体器件还包括在含铜柱的表面上的保护层，其中保护层包括锰。

公开(公告)号：US20130299972A1

公开(公告)日：2013-11-14

申请号：US13941984

申请日：2013-07-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chung-Shi LIU ,  Chen-Hua YU

IPC: H01L23/00

CPC classification number: H01L23/53228 ,  H01L23/53238 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0236 ,  H01L2224/024 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13609 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01028 ,  H01L2924/0105

Abstract: A semiconductor device includes a semiconductor substrate and a conductive post overlying and electrically connected to the substrate. The semiconductor device further includes a manganese-containing protection layer on a surface of the conductive post. The semiconductor device further includes a cap layer over a top surface of the conductive post. A method of forming a semiconductor device includes forming a bond pad region on a semiconductor substrate. The method further includes forming a conductive post overlying and electrically connected to the bond pad region. The method further includes forming a protection layer on a surface of the conductive post, wherein the protection layer comprises manganese (Mn). The method further includes forming a cap layer on a top surface of the conductive post.

Abstract translation: 半导体器件包括半导体衬底和覆盖并电连接到衬底的导电柱。 半导体器件还包括在导电柱的表面上的含锰保护层。 半导体器件还包括在导电柱的顶表面上方的覆盖层。 形成半导体器件的方法包括在半导体衬底上形成接合焊盘区域。 该方法还包括形成覆盖并电连接到接合焊盘区域的导电柱。 该方法还包括在导电柱的表面上形成保护层，其中保护层包括锰（Mn）。 该方法还包括在导电柱的顶表面上形成盖层。