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公开(公告)号:US20170182600A1
公开(公告)日:2017-06-29
申请号:US15116275
申请日:2014-02-04
CPC分类号: B23K35/0244 , B22F1/0003 , B22F1/0048 , B22F1/025 , B22F9/08 , B22F9/082 , B22F9/14 , B22F2009/0848 , B22F2301/10 , B22F2301/15 , B22F2998/10 , B22F2999/00 , B23K1/0016 , B23K1/008 , B23K3/0623 , B23K35/302 , B23K35/3033 , B23K2101/42 , C22C9/00 , C22C19/03 , C22F1/08 , C22F1/10 , H01L23/49816 , H01L23/556 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/111 , H01L2224/11334 , H01L2224/13014 , H01L2224/13016 , H01L2224/13105 , H01L2224/13109 , H01L2224/13117 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13138 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13163 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13172 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13179 , H01L2224/1318 , H01L2224/13181 , H01L2224/13183 , H01L2224/13184 , H01L2224/132 , H01L2224/13211 , H01L2224/13294 , H01L2224/133 , H01L2224/13305 , H01L2224/13309 , H01L2224/13317 , H01L2224/13318 , H01L2224/1332 , H01L2224/13323 , H01L2224/13324 , H01L2224/13338 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13349 , H01L2224/13355 , H01L2224/13357 , H01L2224/1336 , H01L2224/13363 , H01L2224/13364 , H01L2224/13366 , H01L2224/13369 , H01L2224/1337 , H01L2224/13371 , H01L2224/13372 , H01L2224/13373 , H01L2224/13376 , H01L2224/13378 , H01L2224/13379 , H01L2224/1338 , H01L2224/13381 , H01L2224/13383 , H01L2224/13384 , H01L2224/1339 , H01L2224/136 , H01L2224/13611 , H01L2224/13655 , H01L2224/13657 , H01L2224/1369 , H01L2224/16145 , H01L2224/16225 , H01L2224/81011 , H01L2924/381 , H01L2924/3841 , H05K3/3436 , H05K3/3463 , H05K2203/041 , B22F2202/13 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/01049 , H01L2924/01028 , H01L2924/01027 , H01L2924/01051 , H01L2924/01032 , H01L2924/01015 , H01L2924/01026 , H01L2924/01082 , H01L2924/01079 , H01L2924/01092 , H01L2924/0109 , H01L2924/01033 , H01L2924/00014 , H01L2924/01203 , H01L2924/01204 , H01L2924/0105 , H01L2924/01083 , H01L2924/0103 , H01L2924/01048 , H01L2924/01016 , H01L2924/01013 , H01L2924/01012 , H01L2924/01022 , H01L2924/01025 , H01L2924/0106 , H01L2924/01071 , H01L2924/01069 , H01L2924/01021 , H01L2924/01068 , H01L2924/01059 , H01L2924/01067 , H01L2924/01066 , H01L2924/01065 , H01L2924/01064 , H01L2924/01061 , H01L2924/01057 , H01L2924/0102 , H01L2924/01063 , H01L2924/0107 , H01L2924/01058 , H01L2924/01038 , H01L2924/01056 , H01L2924/01052 , H01L2924/01076 , H01L2924/01072 , H01L2924/01043 , H01L2924/01004
摘要: Produced is a metal ball which suppresses an emitted α dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.
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公开(公告)号:US20130001775A1
公开(公告)日:2013-01-03
申请号:US13634079
申请日:2011-03-18
IPC分类号: H01L21/60 , H05K1/02 , H05K13/04 , H01L23/498
CPC分类号: H01L23/4924 , H01L21/4853 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/05166 , H01L2224/05644 , H01L2224/1132 , H01L2224/1134 , H01L2224/1147 , H01L2224/13082 , H01L2224/13294 , H01L2224/13305 , H01L2224/13309 , H01L2224/13311 , H01L2224/13313 , H01L2224/13316 , H01L2224/13317 , H01L2224/13318 , H01L2224/1332 , H01L2224/13323 , H01L2224/13324 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13349 , H01L2224/13355 , H01L2224/13357 , H01L2224/13364 , H01L2224/13366 , H01L2224/13369 , H01L2224/1601 , H01L2224/16227 , H01L2224/16245 , H01L2224/2732 , H01L2224/2747 , H01L2224/29294 , H01L2224/29305 , H01L2224/29309 , H01L2224/29311 , H01L2224/29313 , H01L2224/29316 , H01L2224/29317 , H01L2224/29318 , H01L2224/2932 , H01L2224/29323 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29349 , H01L2224/29355 , H01L2224/29357 , H01L2224/29364 , H01L2224/29366 , H01L2224/29369 , H01L2224/3201 , H01L2224/32227 , H01L2224/32245 , H01L2224/81075 , H01L2224/81125 , H01L2224/81127 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81203 , H01L2224/81447 , H01L2224/8184 , H01L2224/83075 , H01L2224/83125 , H01L2224/83127 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/83447 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01021 , H01L2924/01022 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/15787 , H01L2924/351 , H05K2203/0338 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要: A conductive connecting member formed on a bonded face of an electrode terminal of a semiconductor or an electrode terminal of a circuit board, the conductive connecting member comprising a porous body formed in such manner that a conductive paste containing metal fine particles (P) having mean primary particle diameter from 10 to 500 nm and an organic solvent (S), or a conductive paste containing the metal fine particles (P) and an organic dispersion medium (D) comprising the organic solvent (S) and an organic binder (R) is heating-treated so as for the metal fine particles (P) to be bonded, the porous body being formed by bonded metal fine particles (P) having mean primary particle diameter from 10 to 500 nm, a porosity thereof being from 5 to 35 volume %, and mean pore diameter being from 1 to 200 nm.
摘要翻译: 一种形成在半导体的电极端子或电路板的电极端子的接合面上的导电连接构件,所述导电性连接构件包括多孔体,所述多孔体形成为含有具有平均值的金属微粒(P)的导电性糊料 一次粒径为10〜500nm的有机溶剂(S),或包含有机溶剂(S)和有机粘合剂(R)的金属微粒(P)和有机分散介质(D)的导电糊) 对于待接合的金属微粒(P)进行加热处理,多孔体由平均一次粒径为10〜500nm的接合金属微粒(P)形成,孔隙率为5〜35 体积%,平均孔径为1〜200nm。
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