Abstract:
The present disclosure relates to the field of fabricating microelectronic packages, wherein magnetic particles distributed within a solder paste may be used to form a magnetic intermetallic compound interconnect. The intermetallic compound interconnect may be exposed to a magnetic field, which can heat a solder material to a reflow temperature for attachment of microelectronic components comprising the microelectronic packages.
Abstract:
A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.
Abstract:
A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.
Abstract:
The present disclosure relates to the field of fabricating microelectronic packages, wherein magnetic particles distributed within a solder paste may be used to form a magnetic intermetallic compound interconnect. The intermetallic compound interconnect may be exposed to a magnetic field, which can heat a solder material to a reflow temperature for attachment of microelectronic components comprising the microelectronic packages.
Abstract:
A chip arrangement may include: a flexible carrier; a first supporting structure and a second supporting structure for strengthening a region of the carrier, the first supporting structure being arranged on a first side of the carrier and the second supporting structure being arranged opposite from the first supporting structure on a second side of the carrier; and a chip arranged on the first side of the carrier, the chip being carried and supported by means of the supporting structures and by means of the carrier. The second supporting structure may extend at least by the same amount as the chip along the directions parallel to the surface of the carrier.
Abstract:
A silicon-based wafer such as a TSV interposer wafer having a first and second surfaces wherein a glass carrier is mounted on the second surface by a UV tape is held by a vacuum holder applied on the first surface and the glass carrier is removed from the silicon-based wafer by irradiating the UV tape with a UV light through the glass carrier. The silicon-based wafer is then flipped and placed onto a vacuum plate and secured to the vacuum plate by applying vacuum to the vacuum plate. The vacuum holder is then released from the silicon-based wafer leaving the silicon-based wafer secured to the vacuum plate for subsequent processing steps.
Abstract:
A resist pattern in accordance with a predetermined pattern is formed on a substrate. Next, a bump resist mixed with a micro metallic powder is made thicker than the resist pattern and formed on the substrate formed with the resist pattern. Continuously, the bump resist on the resist pattern is removed in the bump resist. Next, the resist pattern is removed. As a result, a bump resist pattern corresponding to the predetermined pattern remains on the substrate. Furthermore, the resist component in this bump resist pattern is removed, thereby forming a micro bump (micro projecting electrode) 8 consisting of the micro metallic powder on the substrate.
Abstract:
The present disclosure relates to the field of fabricating microelectronic packages, wherein magnetic particles distributed within a solder paste may be used to form a magnetic intermetallic compound interconnect. The intermetallic compound interconnect may be exposed to a magnetic field, which can heat a solder material to a reflow temperature for attachment of microelectronic components comprising the microelectronic packages.
Abstract:
A component built-in board comprises stacked therein a plurality of printed wiring bases having a wiring pattern and a via formed on/in a resin base thereof, and comprises an electronic component built in thereto, wherein at least a portion of the plurality of printed wiring bases include a thermal wiring in the wiring pattern and include a thermal via in the via, at least one of the plurality of printed wiring bases has formed therein an opening where the electronic component is built, and has formed therein a heat-conducting layer and closely attached to a surface on an opposite side to an electrode formation surface of the electronic component built in to the opening, and the electronic component is fixed in the opening by an adhesive layer stacked on the heat-conducting layer, via a hole formed in a region facing onto the opening of the heat-conducting layer.
Abstract:
A component built-in board comprises stacked therein a plurality of printed wiring bases having a wiring pattern and a via formed on/in a resin base thereof, and comprises an electronic component built in thereto, wherein at least a portion of the plurality of printed wiring bases include a thermal wiring in the wiring pattern and include a thermal via in the via, at least one of the plurality of printed wiring bases has formed therein an opening where the electronic component is built, and has formed therein a heat-conducting layer and closely attached to a surface on an opposite side to an electrode formation surface of the electronic component built in to the opening, and the electronic component is fixed in the opening by an adhesive layer stacked on the heat-conducting layer, via a hole formed in a region facing onto the opening of the heat-conducting layer.