公开(公告)号：US09887668B2

公开(公告)日：2018-02-06

申请号：US15259995

申请日：2016-09-08

申请人： Skyworks Solutions, Inc.

发明人： Peter J. Zampardi, Jr. ,  Hsiang-Chih Sun ,  Sandra Louise Petty-Weeks ,  Guohao Zhang ,  Hardik Bhupendra Modi

IPC分类号： H03F3/14 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F3/213 ,  H03F3/195 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L21/8252 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H01L29/20 ,  H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/66 ,  H01L23/31 ,  H01L21/768 ,  H03F3/187 ,  H03F3/347 ,  H03F1/56 ,  H01L29/8605 ,  H01L27/092 ,  H03F3/45 ,  H01L29/06 ,  H01L29/10

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US09520835B2

公开(公告)日：2016-12-13

申请号：US14686585

申请日：2015-04-14

申请人： Skyworks Solutions, Inc.

发明人： Tin Myint Ko ,  Philip John Lehtola ,  Matthew Thomas Ozalas ,  David Steven Ripley ,  Hongxiao Shao ,  Peter J. Zampardi, Jr.

IPC分类号： H03F3/195 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H03F3/213 ,  H03F3/187 ,  H03F3/347 ,  H03F3/45 ,  H01L29/8605 ,  H01L21/8252 ,  H01L27/092

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a first die including a power amplifier and a passive component, the power amplifier including a bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; and a second die including a bias circuit configured to generate a bias signal based at least partly on an indication of an electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 本公开的一个方面是功率放大器模块，其包括具有功率放大器和无源部件的第一管芯，所述功率放大器包括具有集电极的双极晶体管，邻接所述集电极的基极和发射极，所述集电极具有掺杂 在与碱的界面处浓度为至少约3×1016cm-3，集电体也具有掺杂浓度从基底增加的分级; 以及第二管芯，其包括偏置电路，所述偏置电路被配置为至少部分地基于所述第一管芯的无源部件的电特性的指示来产生偏置信号，并将所述偏置信号提供给所述功率放大器。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US20150326181A1

公开(公告)日：2015-11-12

申请号：US14686559

申请日：2015-04-14

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Howard E. Chen ,  Yifan Guo ,  Dinhphuoc Vu Hoang ,  Mehran Janani ,  Tin Myint Ko ,  Philip John Lehtola ,  Anthony James LoBianco ,  Hardik Bhupendra Modi ,  Hoang Mong Nguyen ,  Matthew Thomas Ozalas ,  Sandra Louise Petty-Weeks ,  Matthew Sean Read ,  Jens Albrecht Riege ,  David Steven Ripley ,  Hongxiao Shao ,  Hong Shen ,  Weimin Sun ,  Hsiang-Chih Sun ,  Patrick Lawrence Welch ,  Peter J. Zampardi, JR. ,  Guohao Zhang

IPC分类号： H03F1/02 ,  H03F3/21 ,  H03F3/19

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20120126418A1

公开(公告)日：2012-05-24

申请号：US12954397

申请日：2010-11-24

申请人： Chien-Te Feng ,  Shih-Chin Lin

发明人： Chien-Te Feng ,  Shih-Chin Lin

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L24/32 ,  H01L21/563 ,  H01L23/481 ,  H01L23/4985 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32237 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81418 ,  H01L2224/8142 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/8146 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81469 ,  H01L2224/81473 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/83385 ,  H01L2224/85409 ,  H01L2224/85411 ,  H01L2224/85413 ,  H01L2224/85416 ,  H01L2224/85418 ,  H01L2224/8542 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/85457 ,  H01L2224/8546 ,  H01L2224/85463 ,  H01L2224/85464 ,  H01L2224/85469 ,  H01L2224/85473 ,  H01L2224/85476 ,  H01L2224/85478 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit (IC) device includes a polymer substrate having a topside surface and a bottomside surface opposite the topside surface, a plurality of through-holes that extend from the topside surface to the bottomside surface, and a plurality of bottom metal pads on the bottomside surface positioned over the plurality of through-holes. At least one IC die having an active topside including a plurality of bond pads and a second side is affixed to the topside surface. Bonding features are coupled to the plurality of bond pads for coupling respective ones of the plurality of bond pads to the plurality bottom metal pads. The bonding features extend into the through-holes to contact the bottom metal pads.

摘要翻译： 集成电路（IC）装置包括具有顶侧表面和与顶侧表面相对的底部表面的聚合物基板，从顶侧表面延伸到底部表面的多个通孔，以及多个底部金属焊盘 底部表面定位在多个通孔上。 具有包括多个接合焊盘的活动顶面和第二侧的至少一个IC管芯固定到顶侧表面。 接合特征耦合到多个接合焊盘，用于将多个接合焊盘中的相应接合焊盘连接到多个底部金属焊盘。 接合特征延伸到通孔中以接触底部金属焊盘。

公开(公告)号：US20090189261A1

公开(公告)日：2009-07-30

申请号：US12020286

申请日：2008-01-25

申请人： Lay Yeap Lim ,  David Chong

发明人： Lay Yeap Lim ,  David Chong

IPC分类号： H01L23/495 ,  H01L21/50

CPC分类号： H01L23/49562 ,  H01L21/4828 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49551 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48599 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/49111 ,  H01L2224/4945 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/85051 ,  H01L2224/85191 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/0665 ,  H01L2224/85 ,  H01L2224/78 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/206

摘要： Semiconductor packages with a reduced-height die pad and associated methods for making and using these semiconductor packages are described. The semiconductor packages include a lead frame with die pad of reduced height so the die pad has a height that is less than that of the lead frame. The semiconductor packages may comprise an isolated and/or a fused lead finger with a portion of an upper surface of the isolated lead finger that is removed to form a concavity to which one or more bond wires may be bonded. The upper surface of the isolated lead finger may be removed so the isolated lead finger has a height that is less than the height of the lead frame. And a perimeter of a bottom surface of the fused lead finger may be removed. Other embodiments are described.

摘要翻译： 描述了具有较低高度管芯焊盘的半导体封装以及用于制造和使用这些半导体封装件的相关方法。 半导体封装包括具有降低高度的管芯焊盘的引线框架，使得管芯焊盘的高度小于引线框架的高度。 半导体封装可以包括隔离的和/或熔合的引线指，其中隔离的引线指的上表面的一部分被去除以形成可以结合一个或多个接合线的凹面。 可以去除隔离的引线指的上表面，使得隔离的引线指的高度小于引线框架的高度。 并且可以去除熔融引线指的底表面的周边。 描述其他实施例。

公开(公告)号：US09692357B2

公开(公告)日：2017-06-27

申请号：US14686666

申请日：2015-04-14

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Dinhphuoc Vu Hoang ,  Hardik Bhupendra Modi ,  Hsiang-Chih Sun ,  Peter J. Zampardi, Jr. ,  Guohao Zhang

IPC分类号： H03F3/195 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H03F3/213 ,  H03F3/187 ,  H03F3/347 ,  H01L29/8605 ,  H01L21/8252 ,  H01L27/092 ,  H03F3/45

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20160380602A1

公开(公告)日：2016-12-29

申请号：US15260015

申请日：2016-09-08

申请人： Skyworks Solutions, Inc.

发明人： Peter J. Zampardi, JR. ,  Hsiang-Chih Sun ,  Hong Shen ,  Mehran Janani ,  Jens Albrecht Riege

IPC分类号： H03F3/213 ,  H01L29/737 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L23/498 ,  H01L29/66 ,  H01L21/8249 ,  H01L21/8252 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/66 ,  H01L23/552 ,  H01L23/31 ,  H03F3/195 ,  H01L23/66

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and tantalum nitride terminated through wafer via. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. A metal layer in the tantalum nitride terminated through wafer via is included in an electrical connection between the power amplifier on a front side of a substrate and a conductive layer on a back side of the substrate. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 本公开的一个方面是功率放大器模块，其包括被配置为放大射频（RF）信号的功率放大器和通过晶片通孔终止的氮化钽。 功率放大器包括异质结双极晶体管和p型场效应晶体管，其中p型场效应晶体管的半导体部分对应于沟道，其包括与异质结双极晶体管的集电极层相同类型的半导体材料 。 通过晶片通孔终止的氮化钽中的金属层被包括在基板正面的功率放大器与基板的背面的导电层之间的电连接中。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US20150326183A1

公开(公告)日：2015-11-12

申请号：US14686666

申请日：2015-04-14

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Howard E. Chen ,  Yifan Guo ,  Dinhphuoc Vu Hoang ,  Mehran Janani ,  Tin Myint Ko ,  Philip John Lehtola ,  Anthony James LoBianco ,  Hardik Bhupendra Modi ,  Hoang Mong Nguyen ,  Matthew Thomas Ozalas ,  Sandra Louise Petty-Weeks ,  Matthew Sean Read ,  Jens Albrecht Riege ,  David Steven Ripley ,  Hongxiao Shao ,  Hong Shen ,  Weimin Sun ,  Hsiang-Chih Sun ,  Patrick Lawrence Welch ,  Peter J. Zampardi, JR. ,  Guohao Zhang

IPC分类号： H03F1/02 ,  H03F3/21 ,  H03F3/19

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 本公开的一个方面是功率放大器模块，其包括功率放大器管芯，功率放大器管芯包括被配置为放大射频（RF）信号的功率放大器，功率放大器包括异质结双极晶体管（HBT）和p型场效应晶体管 （PFET），所述PFET包括半导体段，所述半导体段包括与所述HBT的集电极基本相同的材料，所述半导体段对应于所述PFET的沟道; 电连接到所述功率放大器的输出并被配置为在所述RF信号的基频处提供阻抗匹配的负载线; 以及谐波终端电路，其电连接到所述功率放大器的输出并且被配置为在与所述RF信号的谐波频率相对应的相位处终止。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US08476746B2

公开(公告)日：2013-07-02

申请号：US12805718

申请日：2010-08-17

申请人： Cheng-Yu Hsia ,  Chiao-Jung Yeh

发明人： Cheng-Yu Hsia ,  Chiao-Jung Yeh

IPC分类号： H01L23/13

CPC分类号： H01L23/49548 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49503 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48616 ,  H01L2224/48639 ,  H01L2224/49171 ,  H01L2224/85416 ,  H01L2224/85439 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A leadframe enhancing molding compound bondability includes a chip base and a pin holder. The chip bases includes a chip pad and a support, wherein the chip pad includes a side protrusion extending out of the support, and the side protrusion has a lower surface, and the support has a sidewall, and wherein the lower surface and the sidewall interconnect at an intersection line, and the lower surface is formed upwardly with a recess. Further, a pin holder includes a pin stand and a seat, wherein the pin stand has an edge portion extending out of the seat, the edge portion has a lower surface, the seat has a sidewall, and the lower surface and the sidewall interconnect at a crossing line. The lower surface of the pin stand is formed upward with a recess. As such, the bondability between the leadframe and the molding compound can be greatly enhanced.

摘要翻译： 引线框增强模塑复合材料的粘结性包括芯片基座和针架。 所述芯片基座包括芯片焊盘和支撑件，其中所述芯片焊盘包括从所述支撑件延伸出的侧突起，并且所述侧突出部具有下表面，并且所述支撑件具有侧壁，并且其中所述下表面和所述侧壁互连 在交叉线处，下表面向上形成有凹部。 此外，针架包括销座和座，其中销座具有延伸出座的边缘部分，边缘部分具有下表面，座具有侧壁，并且下表面和侧壁互连在 一条十字路口。 销支架的下表面形成有一个凹槽。 因此，可以大大提高引线框架和模塑料之间的粘合性。

公开(公告)号：US20090294952A1

公开(公告)日：2009-12-03

申请号：US12128107

申请日：2008-05-28

申请人： Chi Chih Lin ,  Bo Sun ,  Hung Jen Wang ,  Jen Feng Tseng

发明人： Chi Chih Lin ,  Bo Sun ,  Hung Jen Wang ,  Jen Feng Tseng

IPC分类号： H01L23/04 ,  H01L21/02 ,  H01L21/44

CPC分类号： H01L23/3121 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： The present invention discloses a chip package carrier and a fabrication method, which have the advantages of high reliability, thickness reduction and the scale reduction. The carrier and the method uses blind holes., which penetrates the substrate but external traces and external bonding pads, which cover the external traces. A chip can be installed and encapsulated directly on a first surface.

摘要翻译： 本发明公开了一种芯片封装载体和制造方法，其具有可靠性高，厚度减小和刻度缩小的优点。 载体和方法使用盲孔，其穿透基板，但外部迹线和外部接合焊盘覆盖外部迹线。 芯片可以直接安装和封装在第一个表面上。