公开(公告)号：US20220393653A1

公开(公告)日：2022-12-08

申请号：US17820497

申请日：2022-08-17

申请人： Skyworks Solutions, Inc.

发明人： Peter J. Zampardi, JR. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas ,  Hong Shen ,  Mehran Janani ,  Jens Albrecht Riege ,  Hsiang-Chih Sun ,  David Steven Ripley ,  Philip John Lehtola

IPC分类号： H03F3/213 ,  H03F3/19 ,  H03F1/02 ,  H03F3/21 ,  H03F3/195 ,  H01L23/00 ,  H01L21/768 ,  H03F3/24 ,  H01L23/552 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L21/8252 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H01L23/66 ,  H01L29/20 ,  H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/66 ,  H01L23/31 ,  H01L23/522

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20140002188A1

公开(公告)日：2014-01-02

申请号：US13917384

申请日：2013-06-13

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Howard E. Chen ,  Yifan Guo ,  Dinhphuoc Vu Hoang ,  Mehran Janani ,  Tin Myint Ko ,  Philip John Lehtola ,  Anthony James LoBianco ,  Hardik Bhupendra Modi ,  Hoang Mong Nguyen ,  Matthew Thomas Ozalas ,  Sandra Louise Petty-Weeks ,  Matthew Sean Read ,  Jens Albrecht Riege ,  David Steven Ripley ,  Hongxiao Shao ,  Hong Shen ,  Weimin Sun ,  Hsiang-Chih Sun ,  Patrick Lawrence Welch ,  Peter J. Zampardi, JR. ,  Guohao Zhang

IPC分类号： H03F3/19

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 功率放大器模块包括功率放大器，其包括具有集电极的GaAs双极晶体管，邻接集电极的基极和发射极，该集电极在与基极的连接处具有至少约3×1016cm-3的掺杂浓度， 所述收集器还具有至少第一分级，其中掺杂浓度从所述基底增加; 以及由功率放大器驱动的RF传输线，RF传输线包括在导电层上的导电层和精整电镀，精加工镀层包括金层，接近金层的钯层和靠近金层的扩散阻挡层 钯层，扩散阻挡层包括镍，并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US11451199B2

公开(公告)日：2022-09-20

申请号：US16943336

申请日：2020-07-30

申请人： Skyworks Solutions, Inc.

发明人： David Steven Ripley ,  Philip John Lehtola ,  Peter J. Zampardi, Jr. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas

IPC分类号： H03F3/14 ,  H03F3/213 ,  H03F3/19 ,  H03F1/02 ,  H03F3/21 ,  H03F3/195 ,  H01L23/00 ,  H01L21/768 ,  H03F3/24 ,  H01L23/552 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L21/8252 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H01L23/66 ,  H01L29/20 ,  H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/66 ,  H01L23/31 ,  H01L23/522 ,  H03F3/187 ,  H03F3/347 ,  H03F1/56 ,  H03F3/45 ,  H01L29/8605 ,  H01L27/092 ,  H01L29/06 ,  H01L29/10

摘要： One aspect of this disclosure is a power amplifier system that includes a control interface, a power amplifier, a passive component, and a bias circuit. The power amplifier and the passive component can be on a first die. The bias circuit can be on a second die. The control interface can operate as a serial interface or as a general purpose input/output interface. The power amplifier can be controllable based at least partly on an output signal from the control interface. The bias circuit can generate a bias signal based at least partly on an indication of the electrical property of the passive component. Other embodiments of the system are provided along with related methods and components thereof.

公开(公告)号：US10771024B2

公开(公告)日：2020-09-08

申请号：US16104114

申请日：2018-08-16

申请人： Skyworks Solutions, Inc.

发明人： Peter J. Zampardi, Jr. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas ,  David Steven Ripley ,  Philip John Lehtola

IPC分类号： H01L27/082 ,  H03F3/213 ,  H03F3/19 ,  H03F1/02 ,  H03F3/21 ,  H03F3/195 ,  H01L23/00 ,  H01L21/768 ,  H03F3/24 ,  H01L23/552 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L21/8252 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H01L23/66 ,  H01L29/20 ,  H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/66 ,  H01L23/31 ,  H01L23/522 ,  H03F3/187 ,  H03F3/347 ,  H03F1/56 ,  H03F3/45 ,  H01L29/8605 ,  H01L27/092 ,  H01L29/06 ,  H01L29/10

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3×1016 cm−3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US09490751B2

公开(公告)日：2016-11-08

申请号：US14686585

申请日：2015-04-14

申请人： Skyworks Solutions, Inc.

发明人： Tin Myint Ko ,  Philip John Lehtola ,  Matthew Thomas Ozalas ,  David Steven Ripley ,  Hongxiao Shao ,  Peter J. Zampardi, Jr.

IPC分类号： H03F3/195 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H03F3/213 ,  H03F3/187 ,  H03F3/347 ,  H03F3/45 ,  H01L29/8605 ,  H01L21/8252 ,  H01L27/092

摘要： One aspect of this disclosure is a power amplifier module that includes a first die including a power amplifier and a passive component, the power amplifier including a bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; and a second die including a bias circuit configured to generate a bias signal based at least partly on an indication of an electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US09520835B2

公开(公告)日：2016-12-13

申请号：US14686585

申请日：2015-04-14

申请人： Skyworks Solutions, Inc.

发明人： Tin Myint Ko ,  Philip John Lehtola ,  Matthew Thomas Ozalas ,  David Steven Ripley ,  Hongxiao Shao ,  Peter J. Zampardi, Jr.

IPC分类号： H03F3/195 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H03F3/213 ,  H03F3/187 ,  H03F3/347 ,  H03F3/45 ,  H01L29/8605 ,  H01L21/8252 ,  H01L27/092

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a first die including a power amplifier and a passive component, the power amplifier including a bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; and a second die including a bias circuit configured to generate a bias signal based at least partly on an indication of an electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 本公开的一个方面是功率放大器模块，其包括具有功率放大器和无源部件的第一管芯，所述功率放大器包括具有集电极的双极晶体管，邻接所述集电极的基极和发射极，所述集电极具有掺杂 在与碱的界面处浓度为至少约3×1016cm-3，集电体也具有掺杂浓度从基底增加的分级; 以及第二管芯，其包括偏置电路，所述偏置电路被配置为至少部分地基于所述第一管芯的无源部件的电特性的指示来产生偏置信号，并将所述偏置信号提供给所述功率放大器。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US20150326181A1

公开(公告)日：2015-11-12

申请号：US14686559

申请日：2015-04-14

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Howard E. Chen ,  Yifan Guo ,  Dinhphuoc Vu Hoang ,  Mehran Janani ,  Tin Myint Ko ,  Philip John Lehtola ,  Anthony James LoBianco ,  Hardik Bhupendra Modi ,  Hoang Mong Nguyen ,  Matthew Thomas Ozalas ,  Sandra Louise Petty-Weeks ,  Matthew Sean Read ,  Jens Albrecht Riege ,  David Steven Ripley ,  Hongxiao Shao ,  Hong Shen ,  Weimin Sun ,  Hsiang-Chih Sun ,  Patrick Lawrence Welch ,  Peter J. Zampardi, JR. ,  Guohao Zhang

IPC分类号： H03F1/02 ,  H03F3/21 ,  H03F3/19

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20130344825A1

公开(公告)日：2013-12-26

申请号：US13917552

申请日：2013-06-13

申请人： Skyworks Solutions, Inc.

发明人： David Steven Ripley ,  Philip John Lehtola ,  Peter J. Zampardi, JR. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas

IPC分类号： H03F3/21 ,  H04B1/38

CPC分类号： H03F3/195 ,  H01L21/8252 ,  H01L23/552 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0605 ,  H01L27/0658 ,  H01L29/20 ,  H01L29/7304 ,  H01L29/7371 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/665 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1305 ,  H01L2924/19107 ,  H01L2924/3025 ,  H03F1/302 ,  H03F3/191 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/18 ,  H03F2200/318 ,  H03F2200/411 ,  H03F2200/555 ,  H04B1/3827 ,  H04B1/40 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

摘要翻译： 本公开涉及一种用于偏置功率放大器的系统。 该系统可以包括第一管芯，其包括功率放大器电路和具有取决于第一管芯的一个或多个条件的电特性的无源部件。 此外，该系统可以包括第二管芯，其包括偏置信号产生电路，该偏置信号产生电路被配置为至少部分地基于第一管芯的无源部件的电性能的测量来产生偏置信号。

公开(公告)号：US20190158045A1

公开(公告)日：2019-05-23

申请号：US16104114

申请日：2018-08-16

申请人： Skyworks Solutions, Inc.

发明人： Peter J. Zampardi, JR. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas ,  David Steven Ripley ,  Philip John Lehtola

IPC分类号： H03F3/213 ,  H01L21/768 ,  H01L23/48 ,  H01L21/66 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/8249 ,  H01L23/31 ,  H01L23/498 ,  H01L29/08 ,  H01L29/20 ,  H01L23/00 ,  H03F3/60 ,  H01L23/50 ,  H01L23/66 ,  H01L23/552 ,  H01L27/06 ,  H01L21/8252 ,  H01L29/205 ,  H01L29/812 ,  H01L29/737 ,  H01L29/66 ,  H01L29/36 ,  H03F3/24 ,  H01L23/522 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F1/02

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3×1016 cm−3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20170019076A1

公开(公告)日：2017-01-19

申请号：US15216621

申请日：2016-07-21

申请人： Skyworks Solutions, Inc.

发明人： David Steven Ripley ,  Philip John Lehtola ,  Peter J. Zampardi, JR. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas

IPC分类号： H03F3/195 ,  H03F3/213 ,  H01L29/73 ,  H01L29/20 ,  H01L27/06 ,  H01L23/66

CPC分类号： H03F3/195 ,  H01L21/8252 ,  H01L23/552 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0605 ,  H01L27/0658 ,  H01L29/20 ,  H01L29/7304 ,  H01L29/7371 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/665 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1305 ,  H01L2924/19107 ,  H01L2924/3025 ,  H03F1/302 ,  H03F3/191 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/18 ,  H03F2200/318 ,  H03F2200/411 ,  H03F2200/555 ,  H04B1/3827 ,  H04B1/40 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

摘要翻译： 本公开涉及一种用于偏置功率放大器的系统。 该系统可以包括第一管芯，其包括功率放大器电路和具有取决于第一管芯的一个或多个条件的电特性的无源部件。 此外，该系统可以包括第二管芯，其包括偏置信号产生电路，该偏置信号产生电路被配置为至少部分地基于第一管芯的无源部件的电性能的测量来产生偏置信号。