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公开(公告)号：US20240364275A1
公开(公告)日：2024-10-31
申请号：US18606982
申请日：2024-03-15
发明人： Kyungwoo YOO , Hongmin CHOI , Sanghyun BAEK , Hyung Sun LIM
CPC分类号： H03F1/3241 , H03F3/245 , H04B1/0475 , H03F2200/451 , H04B2001/0425
摘要： A radio-frequency (RF) circuit is provided. The RF circuit includes: a power amplifier; a predistortion circuit configured to predistort an input signal based on reference predistortion information to obtain a predistortion signal, and output the predistortion signal to the power amplifier; and a gain circuit configured to provide a gain, corresponding to a reciprocal of a nonlinear coefficient of the power amplifier, to the predistortion circuit.
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公开(公告)号：US12132507B2
公开(公告)日：2024-10-29
申请号：US17346308
申请日：2021-06-14
发明人： Atsushi Horita , Yukiya Yamaguchi , Morio Takeuchi , Shigeru Tsuchida , Tomoaki Sato , Rui Tanaka
CPC分类号： H04B1/006 , H03F3/245 , H04B1/0057 , H04W52/52 , H03F2200/294 , H03F2200/451
摘要： A radio-frequency module includes a mounting substrate, a first power amplifier, a second power amplifier, a circuit component (IC chip), and an external connection terminal. The mounting substrate has a first main surface and a second main surface on opposite sides of the mounting substrate. The first power amplifier is mounted on the first main surface of the mounting substrate. The second power amplifier is mounted on the first main surface of the mounting substrate. The circuit component is mounted on the second main surface of the mounting substrate. The external connection terminal is disposed on the second main surface of the mounting substrate. The external connection terminal is connected to a power supply that supplies a power supply voltage to the first power amplifier and the second power amplifier.
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公开(公告)号：US12132455B2
公开(公告)日：2024-10-29
申请号：US17647534
申请日：2022-01-10
发明人： Te Yu Kao , Muhammad Hassan , Abdellatif Bellaouar
CPC分类号： H03F3/245 , H03F2200/451 , H03F2200/537
摘要： In certain aspects, an apparatus includes a first amplifier having a first output and a second output, and a transformer. The transformer includes a first switchable inductor coupled between the first output and the second output, a first capacitor coupled in parallel with the first switchable inductor, a second switchable inductor magnetically coupled to the first switchable inductor, a second capacitor coupled in parallel with the second switchable inductor, a third switchable inductor magnetically coupled to the first switchable inductor, and a third capacitor coupled in parallel with the third switchable inductor.
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公开(公告)号：US12132450B2
公开(公告)日：2024-10-29
申请号：US17695500
申请日：2022-03-15
发明人： Wen-Sheng Chen , En-Hsiang Yeh , Tzu-Jin Yeh
CPC分类号： H03F1/30 , H03F3/245 , H04B1/1607 , H04B1/18
摘要： A power amplifier structure includes at least one power amplifier circuit. The power amplifier circuit includes a transistor of a first type connected in series with a transistor of a second type connected between the same voltage supply. In a non-limiting nonexclusive example, an n-type transistor is connected in series with a p-type transistor connected between Vdd. The power amplifier structure can include two amplifier circuits configured in a differential amplifier structure. The differential amplifier structure includes two amplifier circuits operably connected in parallel between the same voltage supply.
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公开(公告)号：US12126310B2
公开(公告)日：2024-10-22
申请号：US18465910
申请日：2023-09-12
申请人： Apple Inc.
发明人： Nitesh Singhal
CPC分类号： H03F3/245 , H04B1/40 , H03F2200/451
摘要： An electronic device may include wireless circuitry with a processor, a transceiver, an antenna, and a front-end module coupled between the transceiver and the antenna. The front-end module may include one or more power amplifiers for amplifying a signal for transmission through the antenna. Radio-frequency power amplifier circuitry may include an amplifier, an input transformer for coupling radio-frequency input signals to the amplifier, an active inductor load coupled to the input transformer, and a second order intermodulation generation circuit configured to generate and inject a second order intermodulation product into the input transformer. The injected second order intermodulation product can be used to cancel out unwanted third order intermodulation products generated by the amplifier, which reduces intermodulation distortion experienced by the amplifier circuitry.
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6.发明公开公开(公告)号：US20240348215A1
公开(公告)日：2024-10-17
申请号：US18325780
申请日：2023-05-30
申请人： Quanta Computer Inc.
发明人： Wen-Chin LIU , Min-Yu CHEN , Ming-Chih LIN
CPC分类号： H03F3/245 , H04B1/40 , H03F2200/451 , H03F2200/462
摘要： A method and system for producing an adjustable resistor with a set resistance for adjusting quiescent current in a GaN transistor in a power amplifier. A quiescent current on the GaN power amplifier is measured via a test probe from a microcontroller unit on a test fixture. A resistance value is determined for output of a voltage bias value to adjust the quiescent current of the GaN transistor in the power amplifier. The resistance value is stored in an electronically adjustable resistor. The adjustable resistor is coupled to an output voltage circuit to provide voltage at the voltage vias value to a voltage bias input of the power amplifier.
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公开(公告)号：US20240348211A1
公开(公告)日：2024-10-17
申请号：US18624973
申请日：2024-04-02
申请人： pSemi Corporation
发明人： Jonathan James Klaren , David Kovac , Eric S. Shapiro , Christopher C. Murphy , Robert Mark Englekirk , Keith Bargroff , Tero Tapio Ranta
CPC分类号： H03F1/223 , H03F1/301 , H03F1/56 , H03F3/193 , H03F3/195 , H03F3/213 , H03F3/245 , H03F2200/102 , H03F2200/105 , H03F2200/165 , H03F2200/18 , H03F2200/21 , H03F2200/222 , H03F2200/225 , H03F2200/243 , H03F2200/294 , H03F2200/297 , H03F2200/301 , H03F2200/306 , H03F2200/387 , H03F2200/391 , H03F2200/399 , H03F2200/42 , H03F2200/451 , H03F2200/48 , H03F2200/489 , H03F2200/492 , H03F2200/498 , H03F2200/555 , H03F2200/61 , H03F2200/78
摘要： Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.
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公开(公告)号：US20240340028A1
公开(公告)日：2024-10-10
申请号：US18746721
申请日：2024-06-18
申请人： MaxLinear, Inc.
发明人： Simon Duxbury , Wing Kai Chong , Didier Margairaz , Bahador Amiri
CPC分类号： H04B1/0096 , H03F3/245 , H04B1/0057 , H04B1/48 , H03F2200/451
摘要： An example device may include an antenna node configured to be coupled to an antenna element. The antenna node may be configured to pass wireless communications over multiple frequency bands. The device may also include multiple signal paths coupled to the antenna node. Each of the multiple signal paths may be configured to carry a signal from a different one of the multiple frequency bands. The device may further include a switch element coupled to the antenna node by the multiple signal paths and an amplifier circuit within the multiple signal paths between the switch element and the antenna node. The amplifier circuit may be configured to amplify the signals carried by the multiple signal paths.
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9.发明授权公开(公告)号：US12113486B2
公开(公告)日：2024-10-08
申请号：US17378564
申请日：2021-07-16
申请人： The Boeing Company
CPC分类号： H03F1/223 , H03F1/0222 , H03F3/195 , H03F3/245 , H03F2200/318 , H03F2200/451
摘要： An amplifier with stacked transconducting cells in parallel and/or cascade “current mode” combining is disclosed herein. In one or more embodiments, a method for operation of a high-voltage signal amplifier comprises inputting, into each transconducting cell of a plurality of transconducting cells, a direct current (DC) supply current (Idc), an alternating current (AC) radio frequency (RF) input current (IRF_IN), and an RF input signal (RFIN). The method further comprises outputting, by each of the transconducting cells of the plurality of transconducting cells, the DC supply current (Idc) and an AC RF output current (IRF_OUT). In one or more embodiments, the transconducting cells are connected together in cascode for the DC supply current (Idc), are connected together in parallel (or in cascade) for the RF input signal (RFIN), and are connected together in parallel (or in cascade) for the AC RF output currents (IRF_OUT).
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公开(公告)号：US20240333231A1
公开(公告)日：2024-10-03
申请号：US18619743
申请日：2024-03-28
发明人： Masatoshi HASE , Seiko NETSU , Shingo YANAGIHARA
CPC分类号： H03F1/3211 , H03F1/0288 , H03F3/245 , H03F3/602 , H03F2200/451
摘要： A power amplifier circuit includes a distortion compensation amplifier circuit that includes a first amplifier that amplifies a first signal distributed from an input signal, and a second amplifier connected in parallel to the first amplifier, that amplifies a second signal distributed from the input signal and having a different phase from the first signal, and outputs an amplified signal obtained by combining a signal output from the first amplifier and the second amplifier, and an output amplifier circuit that outputs an output signal obtained by amplifying the amplified signal. The distortion compensation amplifier circuit further includes a control circuit that controls, based on power of the input signal, the first gain and the second gain to compensate for a change in a phase of the output amplifier circuit with respect to a change in the power of the signal input to the output amplifier circuit.
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