-
41.发明授权Front side copper post joint structure for temporary bond in TSV application 有权前端铜柱接头结构，用于TSV应用中的临时粘结公开(公告)号：US09349699B2
公开(公告)日：2016-05-24
申请号：US14257734
申请日：2014-04-21
发明人： Hon-Lin Huang , Ching-Wen Hsiao , Kuo-Ching Hsu , Chen-Shien Chen
CPC分类号： H01L24/11 , H01L23/3157 , H01L23/481 , H01L24/13 , H01L24/81 , H01L2221/68327 , H01L2221/68359 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05558 , H01L2224/05572 , H01L2224/1147 , H01L2224/11823 , H01L2224/11849 , H01L2224/119 , H01L2224/11912 , H01L2224/13027 , H01L2224/13083 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/1357 , H01L2224/13611 , H01L2224/818 , H01L2924/00014 , H01L2924/0002 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , H01L2224/05552
摘要： A method of forming an integrated circuit structure is provided. The method includes providing a substrate, the substrate having a conductive pad thereon. A dielectric buffer layer is formed over at least a portion of the conductive pad, and an under-bump-metallurgy (UBM) is formed directly coupled to the conductive pad, wherein the UBM extends over at least a portion of the dielectric buffer layer. Thereafter, a conductive pillar is formed over the UBM, and one or more conductive materials are formed over the conductive pillar. The substrate may be attached to a carrier substrate using an adhesive.
摘要翻译： 提供一种形成集成电路结构的方法。 所述方法包括提供衬底，所述衬底在其上具有导电垫。 在导电焊盘的至少一部分上形成介电缓冲层，并且形成直接耦合到导电焊盘的凸起下冶金（UBM），其中UBM延伸至介电缓冲层的至少一部分。 此后，在UBM上形成导电柱，并且在导电柱上方形成一个或多个导电材料。 衬底可以使用粘合剂附接到载体衬底。
-
42.发明授权公开(公告)号：US09330947B2
公开(公告)日：2016-05-03
申请号：US14446478
申请日：2014-07-30
发明人： Shou-Cheng Hu , Ching-Wen Hsiao , Chen-Shien Chen
IPC分类号： H01L21/56 , H01L23/00 , H01L21/683 , H01L23/31
CPC分类号： H01L21/566 , H01L21/02288 , H01L21/02356 , H01L21/568 , H01L21/6835 , H01L23/3121 , H01L24/19 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/04105 , H01L2224/32245 , H01L2224/73267 , H01L2225/06524 , H01L2225/06548 , H01L2225/06589 , H01L2225/06593 , H01L2225/1035 , H01L2924/181 , H01L2924/00
摘要： Package-on-Package (PoP) structures and methods of forming the same are disclosed. In some embodiments, a method of forming a PoP structure may include: placing a device die having a plurality of metal posts over a release layer, wherein the release layer is over a first carrier; forming a plurality of through-assembly vias (TAVs) over the release layer; forming a dam member between the device die and the plurality of TAVs; molding the device die, the dam member, and the plurality of TAVs in a molding compound; and grinding the molding compound to expose ends of the plurality of metal posts and ends of the plurality of TAVs, wherein a top surface of the molding compound is substantially level with the exposed ends of the plurality of metal posts and exposed ends of the plurality of TAVs.
摘要翻译： 封装封装（PoP）结构及其形成方法。 在一些实施例中，形成PoP结构的方法可以包括：将具有多个金属柱的器件裸片放置在释放层上，其中所述释放层在第一载体上方; 在脱模层上形成多个通过组装通孔（TAV）; 在所述装置裸片和所述多个TAV之间形成阻挡构件; 在模塑料中成型模具，阻挡构件和多个TAV; 并且研磨所述模塑料以暴露所述多个TAV的所述多个金属柱和端部的端部，其中所述模塑料的顶表面与所述多个金属柱的暴露端和所述多个金属柱的暴露端基本上平齐 TAVs。
-
43.发明授权Bump structure having a side recess and semiconductor structure including the same 有权具有侧凹部的凹凸结构和包括该凹部的半导体结构公开(公告)号：US09318458B2
公开(公告)日：2016-04-19
申请号：US14800934
申请日：2015-07-16
发明人： Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen , Yen-Liang Lin
IPC分类号： H01L23/00
CPC分类号： H01L24/16 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/81 , H01L25/50 , H01L2224/0401 , H01L2224/05552 , H01L2224/05572 , H01L2224/05599 , H01L2224/10145 , H01L2224/11849 , H01L2224/13011 , H01L2224/13012 , H01L2224/13015 , H01L2224/13018 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/14051 , H01L2224/1412 , H01L2224/14152 , H01L2224/14153 , H01L2224/16238 , H01L2224/81191 , H01L2224/81345 , H01L2224/81815 , H01L2924/00014 , H01L2924/01322 , H01L2924/2064 , Y10T428/12493 , Y10T428/24479 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要： A bump structure includes a first end; and a second end opposite the first end. The bump structure further includes a side connected between the first end and the second end, wherein the side comprises a recess for a reflowed solder material to fill, and the recess defines a first surface adjacent to the first end and a second surface adjacent to the second end.
摘要翻译： 凸块结构包括第一端; 以及与第一端相对的第二端。 凸起结构还包括连接在第一端和第二端之间的侧面，其中侧面包括用于回流焊料材料填充的凹槽，凹部限定与第一端相邻的第一表面和邻近第一端的第二表面 第二端
-
公开(公告)号：US09287234B2
公开(公告)日：2016-03-15
申请号：US14491309
申请日：2014-09-19
发明人： Sheng-Yu Wu , Tin-Hao Kuo , Chita Chuang , Chen-Shien Chen
IPC分类号： H01L23/00 , H01L21/56 , H01L23/31 , H01L23/522 , H01L23/532 , H01L23/58 , H01L21/60
CPC分类号： H01L24/17 , H01L21/563 , H01L23/3171 , H01L23/522 , H01L23/53238 , H01L23/562 , H01L23/585 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L2021/60255 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05008 , H01L2224/05022 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05541 , H01L2224/05569 , H01L2224/05572 , H01L2224/05582 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05671 , H01L2224/05684 , H01L2224/06102 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/13022 , H01L2224/13024 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1403 , H01L2224/14051 , H01L2224/141 , H01L2224/14152 , H01L2224/14179 , H01L2224/16237 , H01L2224/16238 , H01L2224/17104 , H01L2224/17517 , H01L2224/73204 , H01L2224/81007 , H01L2224/81101 , H01L2224/81191 , H01L2224/81815 , H01L2224/83104 , H01L2924/01029 , H01L2924/01047 , H01L2924/04941 , H01L2924/04953 , H01L2924/15787 , H01L2924/15788 , H01L2924/35 , H01L2924/3511 , H01L2924/00014 , H01L2924/014 , H01L2924/206 , H01L2924/00
摘要： A device includes a metal pad over a substrate. A passivation layer includes a portion over the metal pad. A post-passivation interconnect (PPI) is electrically coupled to the metal pad, wherein the PPI comprises a portion over the metal pad and the passivation layer. A polymer layer is over the PPI. A dummy bump is over the polymer layer, wherein the dummy bump is electrically insulated from conductive features underlying the polymer layer.
摘要翻译： 一种器件包括在衬底上的金属焊盘。 钝化层包括在金属焊盘上的部分。 后钝化互连（PPI）电耦合到金属焊盘，其中PPI包括在金属焊盘和钝化层上的部分。 聚合物层在PPI之上。 虚设凸块在聚合物层之上，其中虚设凸块与聚合物层下方的导电特征电绝缘。
-
公开(公告)号：US20160071812A1
公开(公告)日：2016-03-10
申请号：US14942756
申请日：2015-11-16
发明人： Yu-Feng Chen , Yen-Liang Lin , Tin-Hao Kuo , Sheng-Yu Wu , Chen-Shien Chen
IPC分类号： H01L23/00 , H01L21/768 , H01L23/31
CPC分类号： H01L23/562 , H01L21/768 , H01L23/3157 , H01L23/3171 , H01L23/485 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/0231 , H01L2224/0237 , H01L2224/0361 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05005 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/0558 , H01L2224/1146 , H01L2224/1147 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13169 , H01L2224/13171 , H01L2224/13172 , H01L2224/13184 , H01L2224/16238 , H01L2924/00014 , H01L2924/01322 , H01L2924/381 , H01L2924/207 , H01L2924/01079 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552 , H01L2924/00
摘要： A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 μm. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 μm. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 μm. In another embodiment the underbump metallization has a first dimension that is less than a dimension of the contact pad and a second dimension that is greater than a dimension of the contact pad.
摘要翻译： 提供一种用于防止钝化层中的裂纹的系统和方法。 在一个实施例中，接触垫具有第一直径，并且穿过钝化层的开口具有第二直径，其中第一直径大于第二直径大约10μm的第一距离。 在另一个实施例中，通过该开口形成底部凹凸金属化，并且下凸块金属化具有大于第一直径的第三直径约5微米的第二距离。 在另一个实施例中，第一距离和第二距离之和大于约15μm。 在另一个实施例中，下凸点金属化具有小于接触焊盘的尺寸的第一尺寸和大于接触焊盘尺寸的第二尺寸。
-
46.发明申请公开(公告)号：US20160064348A1
公开(公告)日：2016-03-03
申请号：US14470765
申请日：2014-08-27
发明人： Kuo Lung Pan , Yu-Feng Chen , Chen-Shien Chen
IPC分类号： H01L23/00 , H01L25/00 , H01L25/065 , H01L21/56 , H01L23/498 , H01L23/31
CPC分类号： H01L23/49838 , H01L21/4853 , H01L21/486 , H01L21/563 , H01L23/147 , H01L23/3157 , H01L23/49827 , H01L23/49866 , H01L23/49894 , H01L23/5384 , H01L24/05 , H01L24/17 , H01L24/81 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L2224/02245 , H01L2224/02251 , H01L2224/0226 , H01L2224/10175 , H01L2224/13025 , H01L2224/131 , H01L2224/13147 , H01L2224/13687 , H01L2224/1411 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/1703 , H01L2224/17181 , H01L2224/26145 , H01L2224/26175 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/81007 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81805 , H01L2224/81815 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06548 , H01L2924/01029 , H01L2924/05042 , H01L2924/0541 , H01L2924/014 , H01L2924/00014
摘要： Packaging devices, packaged semiconductor devices, and packaging methods are disclosed. In some embodiments, a packaging device includes a substrate having an integrated circuit die mounting region disposed thereon. Microstructures are disposed proximate a side of the integrated circuit die mounting region of the substrate.
摘要翻译： 公开了包装设备，封装半导体器件和封装方法。 在一些实施例中，包装装置包括其上设置有集成电路管芯安装区域的基板。 微结构设置在基板的集成电路管芯安装区域的一侧附近。
-
公开(公告)号：US20160035591A1
公开(公告)日：2016-02-04
申请号：US14883375
申请日：2015-10-14
发明人： Chang-Chia Huang , Chen-Shien Chen , Sheng-Yu Wu , Tin-Hao Kuo , Yen-Liang Lin
CPC分类号： H01L21/563 , H01L23/3157 , H01L23/49816 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L2224/13023 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16237 , H01L2224/16238 , H01L2224/26175 , H01L2224/2929 , H01L2224/29386 , H01L2224/321 , H01L2224/32225 , H01L2224/73204 , H01L2224/81024 , H01L2224/81191 , H01L2224/81815 , H01L2224/83102 , H01L2924/15311 , H01L2924/35121 , H01L2924/37001 , H01L2224/16225 , H01L2924/00 , H01L2924/00014 , H01L2224/2919 , H01L2924/0665 , H01L2924/05442 , H01L2924/00012
摘要： Methods and apparatuses for a attaching a first substrate to a second substrate are provided. In some embodiments, a first substrate has a protective layer, such as a solder mask, around a die attach area, at which a second substrate is attached. A keep-out region (e.g., an area between the second substrate and the protective layer) is a region around the second substrate in which the protective layer is not formed or removed. The keep-out region is sized such that a sufficient gap exists between the second substrate and the protective layer to place an underfill between the first substrate and the second substrate while reducing or preventing voids and while allowing traces in the keep-out region to be covered by the underfill.
摘要翻译： 提供了将第一基板附接到第二基板的方法和装置。 在一些实施例中，第一基板在芯片附着区域周围具有保护层，例如焊接掩模，第二基板在该附着区域附接。 保留区域（例如，第二基板和保护层之间的区域）是不形成或去除保护层的第二基板周围的区域。 保持区域的尺寸使得在第二基板和保护层之间存在足够的间隙，以在第一基板和第二基板之间放置底部填充物，同时减少或防止空隙，并且同时允许在外部区域中的迹线为 由底部填充物覆盖。
-
公开(公告)号：US20160013162A1
公开(公告)日：2016-01-14
申请号：US14860362
申请日：2015-09-21
发明人： Wen-Wei Shen , Ying-Ching Shih , Chen-Shien Chen , Ming-Fa Chen
IPC分类号： H01L25/065 , H01L23/00 , H01L21/48 , H01L25/00 , H01L23/538 , H01L23/498
CPC分类号： H01L25/0657 , H01L21/486 , H01L23/3114 , H01L23/3192 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/5384 , H01L24/03 , H01L24/05 , H01L24/09 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/73 , H01L24/81 , H01L25/0655 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/0381 , H01L2224/03831 , H01L2224/0401 , H01L2224/0557 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/1162 , H01L2224/11622 , H01L2224/1181 , H01L2224/11849 , H01L2224/11903 , H01L2224/13016 , H01L2224/13025 , H01L2224/13084 , H01L2224/13111 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13155 , H01L2224/13169 , H01L2224/1354 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81193 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06548 , H01L2225/06568 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15788 , H01L2224/05552 , H01L2924/00
摘要： A bump structure that may be used to interconnect one substrate to another substrate is provided. A conductive pillar is formed on a first substrate such that the conductive pillar has a width different than a contact surface on a second substrate. In an embodiment the conductive pillar of the first substrate has a trapezoidal shape or a shape having tapered sidewalls, thereby providing a conductive pillar having base portion wider than a tip portion. The substrates may each be an integrated circuit die, an interposer, a printed circuit board, a high-density interconnect, or the like.
摘要翻译： 提供了可用于将一个衬底互连到另一衬底的凸块结构。 导电柱形成在第一基板上，使得导电柱的宽度不同于第二基板上的接触表面。 在一个实施例中，第一基板的导电柱具有梯形形状或具有锥形侧壁的形状，从而提供具有比尖端部宽的基部的导电柱。 基板可以各自为集成电路管芯，插入件，印刷电路板，高密度互连等。
-
公开(公告)号：US20150371964A1
公开(公告)日：2015-12-24
申请号：US14840811
申请日：2015-08-31
发明人： Ming-Hong Cha , Chen-Shien Chen , Chen-Cheng Kuo , Tsung-Hsien Chiang , Hao-Juin Liu , Yao-Chun Chuang , Chita Chuang
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L21/76897 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L24/11 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L25/0657 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/13014 , H01L2224/13022 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13166 , H01L2224/13601 , H01L2224/141 , H01L2224/14154 , H01L2224/14177 , H01L2224/145 , H01L2224/16237 , H01L2224/16238 , H01L2224/171 , H01L2224/81193 , H01L2224/81385 , H01L2224/814 , H01L2224/81815 , H01L2225/06513 , H01L2924/00014 , H01L2924/01029 , H01L2924/1305 , H01L2924/13091 , H01L2924/3511 , H01L2924/3841 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： The embodiments described provide elongated bonded structures near edges of packaged structures free of solder wetting on sides of copper posts substantially facing the center of the packaged structures. Solder wetting occurs on other sides of copper posts of these bonded structures. The elongated bonded structures are arranged in different arrangements and reduce the chance of shorting between neighboring bonded structures. In addition, the elongated bonded structures improve the reliability performance.
摘要翻译： 所描述的实施例提供了在基本上面向封装结构的中心的铜柱的侧面上没有焊料润湿的封装结构的边缘附近的细长结合结构。 焊接润湿发生在这些结合结构的铜柱的另一侧。 细长结合结构被布置成不同的布置并且减小相邻结合结构之间短路的机会。 另外，细长的结合结构提高了可靠性。
-
公开(公告)号：US09219046B2
公开(公告)日：2015-12-22
申请号：US14521233
申请日：2014-10-22
发明人： Wen-Wei Shen , Chen-Shien Chen , Chen-Cheng Kuo , Ming-Fa Chen , Rung-De Wang
IPC分类号： H01L21/02 , H01L23/00 , H01L23/31 , H01L25/065
CPC分类号： H01L24/16 , H01L23/3157 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/03614 , H01L2224/0401 , H01L2224/05017 , H01L2224/05023 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05155 , H01L2224/05568 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/1146 , H01L2224/11823 , H01L2224/11831 , H01L2224/1191 , H01L2224/13005 , H01L2224/13018 , H01L2224/13019 , H01L2224/13076 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/1357 , H01L2224/1369 , H01L2224/16145 , H01L2224/16148 , H01L2224/16238 , H01L2224/81193 , H01L2224/81345 , H01L2224/81801 , H01L2224/81815 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01079 , H01L2924/01322 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/35 , Y10T428/12361 , Y10T428/12396 , H01L2924/00 , H01L2924/00012 , H01L2924/01047 , H01L2924/206 , H01L2224/05552
摘要： A device includes a work piece including a metal bump; and a dielectric layer having a portion directly over the metal bump. The metal bump and a surface of the portion of the dielectric layer form an interface. A metal finish is formed over and contacting the metal bump. The metal finish extends from over the dielectric layer to below the interface.
摘要翻译： 一种装置包括：包括金属凸块的工件; 以及具有直接在金属凸块上的部分的介电层。 金属凸块和电介质层部分的表面形成界面。 在金属凸块上方形成金属涂层并与金属凸块接触。 金属表面从介电层上延伸到界面的下方。
-
-
-
-
-
-
-
-
-
搜索结果
355 条记录 (耗时 0.032 秒)
