公开(公告)号：US11855025B2

公开(公告)日：2023-12-26

申请号：US16687089

申请日：2019-11-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chita Chuang ,  Yao-Chun Chuang ,  Tsung-Shu Lin ,  Chen-Cheng Kuo ,  Chen-Shien Chen

IPC分类号： H01L23/00 ,  H01L23/31

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L23/3192 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05541 ,  H01L2224/05552 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/1147 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13005 ,  H01L2224/1308 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/16237 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/206 ,  H01L2924/381 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05181 ,  H01L2924/00014 ,  H01L2224/05186 ,  H01L2924/04941 ,  H01L2224/05186 ,  H01L2924/04953 ,  H01L2224/05005 ,  H01L2924/206 ,  H01L2224/05541 ,  H01L2924/206 ,  H01L2224/05647 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/01024 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/01079 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2924/01073 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/0103 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01025 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01024 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01022 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01032 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01078 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01012 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/01013 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/0104 ,  H01L2924/00014 ,  H01L2224/1145 ,  H01L2924/00014 ,  H01L2224/11462 ,  H01L2924/00014 ,  H01L2224/11464 ,  H01L2924/00014 ,  H01L2224/13005 ,  H01L2924/206 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2224/13139 ,  H01L2924/00014 ,  H01L2224/13164 ,  H01L2924/00014 ,  H01L2224/13169 ,  H01L2924/00014 ,  H01L2224/13109 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/00014 ,  H01L2224/05572 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/00 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/181 ,  H01L2924/00

摘要： A semiconductor device includes a conductive pad having a first width. The semiconductor device includes a passivation layer over the conductive pad, wherein the passivation layer directly contacts the conductive pad. The semiconductor device includes a protective layer over the passivation layer, wherein the protective layer directly contacts the conductive pad. The semiconductor device includes an under-bump metallization (UBM) layer directly contacting the conductive pad, wherein the UBM layer has a second width greater than the first width. The semiconductor device includes a conductive pillar on the UBM layer.

公开(公告)号：US11742218B2

公开(公告)日：2023-08-29

申请号：US17314522

申请日：2021-05-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chien-Li Kuo ,  Chin-Fu Kao ,  Chen-Shien Chen

IPC分类号： H01L21/48 ,  H01L23/367 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L21/4882 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L21/56 ,  H01L24/27 ,  H01L2224/214

摘要： A method for forming a semiconductor device package is provided. The method includes bonding a semiconductor device to a package substrate; placing a metal lid over the semiconductor device and the package substrate with a metal thermal interface material (TIM) provided between the metal lid and the semiconductor device; heating the metal TIM to melt the metal TIM; pressing the metal lid downward so that the molten metal TIM flows toward the boundary of the semiconductor device, and the outermost point of the lateral sidewall of the molten metal TIM extends beyond the boundary of the semiconductor device; lifting the metal lid upward so that the molten metal TIM flows back, and the outermost point of the lateral sidewall is within the boundary of the semiconductor device; and bonding the metal lid to the semiconductor device through the metal TIM by curing the molten metal TIM.

公开(公告)号：US20220301964A1

公开(公告)日：2022-09-22

申请号：US17834938

申请日：2022-06-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Huan Chiu ,  Chun-Jen Chen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Kuo-Hui Chang ,  Chung-Yi Lin ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/00

摘要： A package includes a die, first conductive structures, second conductive structures, an encapsulant, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The first conductive structures and the second conductive structures surround the die. A shape of the first conductive structures is different a shape of the second conductive structures. The second conductive structures include elliptical columns having straight sidewalls. A distance between the first conductive structure that is closest to the die and the die is greater than a distance between the second conductive structure that is closest to the die and the die. The encapsulant encapsulates the die, the first conductive structures, and the second conductive structures. The redistribution structure is over the die and the encapsulant. The redistribution structure is electrically connected to the die, the first conductive structures, and the second conductive structures.

公开(公告)号：US11387171B2

公开(公告)日：2022-07-12

申请号：US15997378

申请日：2018-06-04

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hui-Min Huang ,  Shou-Cheng Hu ,  Chih-Wei Lin ,  Ming-Da Cheng ,  Chung-Shi Liu ,  Chen-Shien Chen

IPC分类号： H01L21/00 ,  H01L23/495 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L25/10

摘要： A method of packaging a semiconductor die includes connecting an interposer frame directly to a substrate, wherein the interposer frame has a plurality of conductive columns. The method further includes attaching the semiconductor die to the substrate in an opening of the interposer frame, wherein the semiconductor die directly contacts the substrate. The method further includes forming a molding compound to fill space between the semiconductor die and the interposer frame. The method further includes removing a portion of the molding compound to expose the plurality of conductive columns. The method further includes forming a redistribution layer directly contacting a top surface of the semiconductor die and a top surface of the interposer frame.

公开(公告)号：US11315896B2

公开(公告)日：2022-04-26

申请号：US16105014

申请日：2018-08-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tin-Hao Kuo ,  Chen-Shien Chen ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Sheng-Yu Wu ,  Yao-Chun Chuang

IPC分类号： H01L23/00 ,  H01L23/498

摘要： A pillar structure, and a method of forming, for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.

公开(公告)号：US11043462B2

公开(公告)日：2021-06-22

申请号：US16436626

申请日：2019-06-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Wei Lin ,  Sheng-Yu Wu ,  Yu-Jen Tseng ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L25/16 ,  H01L21/48 ,  H01L23/00 ,  H01L21/768 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498

摘要： An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.

公开(公告)号：US20200266074A1

公开(公告)日：2020-08-20

申请号：US16865953

申请日：2020-05-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Sen Chang ,  Yu-Feng Chen ,  Chen-Shien Chen ,  Mirng-Ji Lii

IPC分类号： H01L21/48 ,  H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/498 ,  H01L21/56 ,  H01L21/66 ,  H01L25/00 ,  H01L25/18

摘要： A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.

公开(公告)号：US10748785B2

公开(公告)日：2020-08-18

申请号：US15679348

申请日：2017-08-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hao-Juin Liu ,  Chita Chuang ,  Yao-Chun Chuang ,  Ming Hung Tseng ,  Chen-Shien Chen

IPC分类号： H01L21/48 ,  H05K1/11 ,  H05K1/02 ,  H01L23/13 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00

摘要： A device includes a plurality of first pads in a package substrate, wherein at least one first pad is of a first elongated shape, a plurality of vias in a dielectric layer and over the plurality of first pads, and a plurality of second pads over the package substrate, wherein at least one second pad is of a second elongated shape, and wherein the plurality of second pads is over a top surface of the dielectric layer and placed in a first region, a second region, a third region and a fourth region, and wherein second pads in two contiguous regions are oriented in two different directions.

公开(公告)号：US20200251463A1

公开(公告)日：2020-08-06

申请号：US16853058

申请日：2020-04-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Hua Chen ,  Chen-Shien Chen ,  Ching-Wen Hsiao

IPC分类号： H01L25/00 ,  H01L21/66 ,  H01L23/498 ,  H01L23/13 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L21/48

摘要： A semiconductor package includes a package substrate. A redistribution structure is bonded to the package substrate. A bottommost surface of the redistribution structure is lower than a topmost surface of the package substrate. A conductive connector electrically couples the redistribution structure to the package substrate. The conductive connector physically contacts a sidewall of the redistribution structure. A first integrated circuit die is bonded to the redistribution structure through first bonding structures and is bonded to the package substrate through second bonding structures. The first bonding structures and the second bonding structures have different sizes.

公开(公告)号：US10720788B2

公开(公告)日：2020-07-21

申请号：US14880047

申请日：2015-10-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Chita Chuang ,  Chen-Shien Chen ,  Ming Hung Tseng ,  Sen-Kuei Hsu ,  Yu-Feng Chen ,  Yen-Liang Lin

IPC分类号： H02J50/00 ,  H02J50/10 ,  H02J50/40 ,  H02J7/02 ,  H01F27/28 ,  H01F41/04 ,  H01F38/14 ,  H02J7/00 ,  H02J7/04

摘要： Wireless charging devices, methods of manufacture thereof, and methods of charging electronic devices are disclosed. In some embodiments, a wireless charging device includes a controller, a molding material disposed around the controller, and an interconnect structure disposed over the molding material and coupled to the controller. The wireless charging device includes a wireless charging coil coupled to the controller. The wireless charging coil comprises a first portion disposed in the interconnect structure and a second portion disposed in the molding material. The wireless charging coil is adapted to provide an inductance to charge an electronic device.