发明申请
US20160071812A1 Design Scheme for Connector Site Spacing and Resulting Structures
审中-公开
连接器位置间距和结果结构的设计方案
- 专利标题： Design Scheme for Connector Site Spacing and Resulting Structures
- 专利标题（中）： 连接器位置间距和结果结构的设计方案
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申请号： US14942756申请日： 2015-11-16
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公开(公告)号： US20160071812A1公开(公告)日： 2016-03-10
- 发明人: Yu-Feng Chen , Yen-Liang Lin , Tin-Hao Kuo , Sheng-Yu Wu , Chen-Shien Chen
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/768 ; H01L23/31
摘要：
A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 μm. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 μm. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 μm. In another embodiment the underbump metallization has a first dimension that is less than a dimension of the contact pad and a second dimension that is greater than a dimension of the contact pad.
公开/授权文献
- US09484317B2 Scheme for connector site spacing and resulting structures 公开/授权日：2016-11-01
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