专利检索 cpc:"H01L2224/13811" 第 1 页

1.

发明授权
Methods of packaging semiconductor devices and packaged semiconductor devices 有权
标题翻译：封装半导体器件和封装半导体器件的方法

公开(公告)号：US09406650B2

公开(公告)日：2016-08-02

申请号：US14257833

申请日：2014-04-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shin-Puu Jeng , Wen-Chih Chiou , Tu-Hao Yu , Hung-Jung Tu , Yu-Liang Lin , Shih-Hui Wang

IPC分类号： H01L21/00 , H01L25/065 , H01L25/00 , H01L21/56 , H01L23/31 , H01L23/00

CPC分类号： H01L25/0655 , H01L21/561 , H01L21/563 , H01L21/565 , H01L23/3107 , H01L23/3128 , H01L23/3135 , H01L23/36 , H01L23/49827 , H01L23/60 , H01L24/09 , H01L24/17 , H01L24/81 , H01L24/89 , H01L24/96 , H01L24/97 , H01L25/50 , H01L2224/0401 , H01L2224/08235 , H01L2224/131 , H01L2224/13147 , H01L2224/13811 , H01L2224/13816 , H01L2224/13839 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/49109 , H01L2224/49175 , H01L2224/73104 , H01L2224/73253 , H01L2224/80805 , H01L2224/81805 , H01L2224/83 , H01L2224/83192 , H01L2224/96 , H01L2224/97 , H01L2924/00011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01073 , H01L2924/01074 , H01L2924/01322 , H01L2924/04941 , H01L2924/04953 , H01L2924/0496 , H01L2924/12042 , H01L2924/151 , H01L2924/15311 , H01L2924/157 , H01L2924/15788 , H01L2924/1579 , H01L2924/161 , H01L2924/181 , H01L2924/18161 , H01L2924/00 , H01L2924/00014 , H01L2224/81 , H01L2924/014

摘要： Methods of packaging semiconductor devices and packaged semiconductor devices are disclosed. In some embodiments, a method of packaging semiconductor devices includes coupling integrated circuit dies to a substrate, and disposing a molding material around the integrated circuit dies. A cap layer is disposed over the molding material and the plurality of integrated circuit dies.

摘要翻译： 公开了封装半导体器件和封装半导体器件的方法。在一些实施例中，封装半导体器件的方法包括将集成电路管芯耦合到衬底，以及将模制材料设置在集成电路管芯周围。盖层设置在成型材料和多个集成电路管芯之上。

2.

发明授权
Electroconductive bonding material, method for bonding conductor, and method for manufacturing semiconductor device 失效
标题翻译：导电性接合材料，导体接合方法以及半导体装置的制造方法

公开(公告)号：US08418910B2

公开(公告)日：2013-04-16

申请号：US13367509

申请日：2012-02-07

申请人： Takatoyo Yamakami , Takashi Kubota , Kuniko Ishikawa , Masayuki Kitajima

发明人： Takatoyo Yamakami , Takashi Kubota , Kuniko Ishikawa , Masayuki Kitajima

IPC分类号： B23K35/14 , B23K35/34 , B23K31/02

CPC分类号： H01L24/13 , B22F1/0014 , B22F1/025 , B23K35/262 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C9/00 , C23C24/106 , H01L23/49811 , H01L23/49883 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05671 , H01L2224/0568 , H01L2224/05686 , H01L2224/1131 , H01L2224/1132 , H01L2224/11502 , H01L2224/13017 , H01L2224/13144 , H01L2224/13599 , H01L2224/13609 , H01L2224/13611 , H01L2224/13613 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13709 , H01L2224/13711 , H01L2224/13713 , H01L2224/13809 , H01L2224/13811 , H01L2224/13813 , H01L2224/13839 , H01L2224/13844 , H01L2224/13847 , H01L2224/13899 , H01L2224/13913 , H01L2224/13939 , H01L2224/13944 , H01L2224/13947 , H01L2224/16058 , H01L2224/16148 , H01L2224/16225 , H01L2224/16507 , H01L2224/32225 , H01L2224/73204 , H01L2224/81024 , H01L2224/81055 , H01L2224/81075 , H01L2224/81191 , H01L2224/81193 , H01L2224/812 , H01L2224/8121 , H01L2224/8123 , H01L2224/81509 , H01L2224/81511 , H01L2224/81513 , H01L2224/81639 , H01L2224/81644 , H01L2224/81647 , H01L2224/81699 , H01L2224/81711 , H01L2224/81713 , H01L2224/81739 , H01L2224/81744 , H01L2224/8181 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/13091 , H01L2924/15738 , H01L2924/15788 , H01L2924/1579 , H01L2924/01007 , H01L2924/01008 , H01L2924/01018 , H01L2924/01083 , H01L2924/01031 , H01L2924/0103 , H01L2924/053 , H01L2224/13099 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00

摘要： An electro-conductive bonding material includes: metal components of a high-melting-point metal particle that have a first melting point or higher; a middle-melting-point metal particle that has a second melting point which is first temperature or higher, and second temperature or lower, the second temperature is lower than the first melting point and higher than the first temperature; and a low-melting-point metal particle that has a third melting point or lower, the third melting point is lower than the first temperature.

摘要翻译： 导电接合材料包括：具有第一熔点或更高熔点的高熔点金属颗粒的金属组分; 中间熔点金属颗粒，其具有第一温度或更高的第二熔点，第二温度或更低，第二温度低于第一熔点并高于第一温度; 和具有第三熔点或更低熔点的低熔点金属颗粒，第三熔点低于第一温度。

3.

发明申请
STRUCTURES AND METHODS FOR LOW TEMPERATURE BONDING USING NANOPARTICLES 审中-公开

公开(公告)号：US20180218998A1

公开(公告)日：2018-08-02

申请号：US15937149

申请日：2018-03-27

申请人： Invensas Corporation

发明人： Cyprian Emeka Uzoh

IPC分类号： H01L23/00 , H01L25/065 , H01L25/00

CPC分类号： H01L24/81 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/80 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/03009 , H01L2224/0401 , H01L2224/05571 , H01L2224/05572 , H01L2224/05605 , H01L2224/05609 , H01L2224/05611 , H01L2224/05616 , H01L2224/05639 , H01L2224/05644 , H01L2224/05684 , H01L2224/11009 , H01L2224/11464 , H01L2224/13018 , H01L2224/13019 , H01L2224/13084 , H01L2224/13562 , H01L2224/13564 , H01L2224/13655 , H01L2224/13684 , H01L2224/13686 , H01L2224/13805 , H01L2224/13809 , H01L2224/13811 , H01L2224/13844 , H01L2224/13847 , H01L2224/13855 , H01L2224/16148 , H01L2224/16238 , H01L2224/16265 , H01L2224/16268 , H01L2224/16501 , H01L2224/2919 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2224/81026 , H01L2224/81065 , H01L2224/81099 , H01L2224/81193 , H01L2224/8181 , H01L2224/83026 , H01L2224/83815 , H01L2225/06513 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/19041 , H01L2924/19043 , H01L2924/19104 , H01L2924/3841 , H01L2924/013 , H01L2924/00014 , H01L2924/00012

摘要： A method of making an assembly can include juxtaposing a top surface of a first electrically conductive element at a first surface of a first substrate with a top surface of a second electrically conductive element at a major surface of a second substrate. One of: the top surface of the first conductive element can be recessed below the first surface, or the top surface of the second conductive element can be recessed below the major surface. Electrically conductive nanoparticles can be disposed between the top surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers. The method can also include elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles can cause metallurgical joints to form between the juxtaposed first and second conductive elements.

4.

发明申请
STRUCTURES AND METHODS FOR LOW TEMPERATURE BONDING 有权
标题翻译：低温结合的结构和方法

公开(公告)号：US20170012021A1

公开(公告)日：2017-01-12

申请号：US14796381

申请日：2015-07-10

申请人： Invensas Corporation

发明人： Cyprian Emeka Uzoh

IPC分类号： H01L23/00 , H01L25/00 , H01L25/065

CPC分类号： H01L24/17 , H01L21/4853 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/03009 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05568 , H01L2224/05647 , H01L2224/11442 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11614 , H01L2224/1162 , H01L2224/1182 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/13309 , H01L2224/13311 , H01L2224/13313 , H01L2224/13339 , H01L2224/13344 , H01L2224/13355 , H01L2224/13409 , H01L2224/13561 , H01L2224/1357 , H01L2224/13809 , H01L2224/13811 , H01L2224/13813 , H01L2224/13839 , H01L2224/13844 , H01L2224/13855 , H01L2224/1601 , H01L2224/16058 , H01L2224/16059 , H01L2224/16104 , H01L2224/16113 , H01L2224/16145 , H01L2224/16227 , H01L2224/16238 , H01L2224/16501 , H01L2224/81193 , H01L2224/81204 , H01L2224/81801 , H01L2224/8184 , H01L2224/83815 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/014 , H01L2924/2064 , H01L2924/3511 , H01L2924/3841 , H01L2924/013

摘要： A method of making an assembly can include forming a first conductive element at a first surface of a substrate of a first component, forming conductive nanoparticles at a surface of the conductive element by exposure to an electroless plating bath, juxtaposing the surface of the first conductive element with a corresponding surface of a second conductive element at a major surface of a substrate of a second component, and elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles cause metallurgical joints to form between the juxtaposed first and second conductive elements. The conductive nanoparticles can be disposed between the surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers.

摘要翻译： 制造组件的方法可以包括在第一部件的基板的第一表面处形成第一导电元件，通过暴露于化学镀浴，在导电元件的表面上形成导电纳米颗粒，并置第一导电的表面元件，其具有在第二部件的基板的主表面处的第二导电元件的对应表面，并且至少在并置的第一和第二导电元件的界面处将温度升高到导电纳米颗粒引起冶金接头的接合温度在并置的第一和第二导电元件之间形成。导电纳米颗粒可以设置在第一和第二导电元件的表面之间。导电纳米颗粒可以具有小于100纳米的长尺寸。

5.

发明授权
Method for low stress flip-chip assembly of fine-pitch semiconductor devices 有权
标题翻译：微型间距半导体器件的低应力倒装芯片组装方法

公开(公告)号：US08530360B2

公开(公告)日：2013-09-10

申请号：US13013438

申请日：2011-01-25

申请人： Abram M. Castro

发明人： Abram M. Castro

IPC分类号： H01L21/31 , H01L21/469

CPC分类号： H01L24/11 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/056 , H01L2224/1147 , H01L2224/11822 , H01L2224/13099 , H01L2224/13147 , H01L2224/13566 , H01L2224/1379 , H01L2224/13811 , H01L2224/13847 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/8184 , H01L2224/83104 , H01L2224/83862 , H01L2224/9205 , H01L2224/92125 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/00 , H01L2224/29099 , H01L2924/01083 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556

摘要： A device including a first body (101) with terminals (102) on a surface (101a), each terminal having a metallic connector (110), which is shaped as a column substantially perpendicular to the surface. Preferably, the connectors have an aspect ratio of height to diameter of 2 to 1 or greater, and a fine pitch center-to-center. The connector end (110a) remote from the terminal is covered by a film (130) of a sintered paste including a metallic matrix embedded in a first polymeric compound. Further a second body (103) having metallic pads (140) facing the respective terminals (102). Each connector film (130) is in contact with the respective pad (140), whereby the first body (101) is spaced from the second body (103) with the connector columns (110) as standoff. A second polymeric compound (150) is filling the space of the standoff.

摘要翻译： 一种装置，包括在表面（101a）上具有端子（102）的第一主体（101），每个端子具有金属连接器（110），其被成形为基本上垂直于所述表面的柱。优选地，连接器的高度与直径的纵横比为2比1或更大，细长的中心到中心。远离端子的连接器端（110a）被包含嵌入在第一聚合物中的金属基体的烧结膏的膜（130）覆盖。此外，具有面向各个端子（102）的金属垫（140）的第二主体（103）。每个连接器膜（130）与相应的垫（140）接触，由此第一主体（101）与第二主体（103）间隔开连接器柱（110）作为支座。第二聚合物化合物（150）填充间隙的空间。

6.

发明申请
METHOD FOR LOW STRESS FLIP-CHIP ASSEMBLY OF FINE-PITCH SEMICONDUCTOR DEVICES 有权
标题翻译：用于微型切割半导体器件的低应力片状芯片组件的方法

公开(公告)号：US20100148374A1

公开(公告)日：2010-06-17

申请号：US12361768

申请日：2009-01-29

申请人： Abram M. CASTRO

发明人： Abram M. CASTRO

IPC分类号： H01L23/48 , H01L21/02

CPC分类号： H01L24/11 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/056 , H01L2224/1147 , H01L2224/11822 , H01L2224/13099 , H01L2224/13147 , H01L2224/13566 , H01L2224/1379 , H01L2224/13811 , H01L2224/13847 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/8184 , H01L2224/83104 , H01L2224/83862 , H01L2224/9205 , H01L2224/92125 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/00 , H01L2224/29099 , H01L2924/01083 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556

摘要： A device including a first body (101) with terminals (102) on a surface (101a), each terminal having a metallic connector (110), which is shaped as a column substantially perpendicular to the surface. Preferably, the connectors have an aspect ratio of height to diameter of 2 to 1 or greater, and a fine pitch center-to-center. The connector end (110a) remote from the terminal is covered by a film (130) of a sintered paste including a metallic matrix embedded in a first polymeric compound. Further a second body (103) having metallic pads (140) facing the respective terminals (102). Each connector film (130) is in contact with the respective pad (140), whereby the first body (101) is spaced from the second body (103) with the connector columns (110) as standoff. A second polymeric compound (150) is filling the space of the standoff.

摘要翻译： 一种装置，包括在表面（101a）上具有端子（102）的第一主体（101），每个端子具有金属连接器（110），其被成形为基本上垂直于所述表面的柱。优选地，连接器的高度与直径的纵横比为2比1或更大，细长的中心到中心。远离端子的连接器端（110a）被包含嵌入在第一聚合物中的金属基体的烧结膏的膜（130）覆盖。此外，具有面向各个端子（102）的金属垫（140）的第二主体（103）。每个连接器膜（130）与相应的垫（140）接触，由此第一主体（101）与第二主体（103）间隔开连接器柱（110）作为支座。第二聚合物化合物（150）填充间隙的空间。

7.

发明申请
Localized sealing of interconnect structures in small gaps 有权
标题翻译：互连结构在小间隙中的局部密封

公开(公告)号：US20160247778A1

公开(公告)日：2016-08-25

申请号：US15144108

申请日：2016-05-02

申请人： Invensas Corporation

发明人： Rajesh Katkar , Cyprian Emeka Uzoh , Arkalgud R. Sitaram

IPC分类号： H01L23/00

CPC分类号： H01L24/81 , H01L21/768 , H01L23/49838 , H01L23/528 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/10126 , H01L2224/1182 , H01L2224/13023 , H01L2224/13105 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/13562 , H01L2224/1357 , H01L2224/1379 , H01L2224/13809 , H01L2224/13811 , H01L2224/13847 , H01L2224/13855 , H01L2224/1601 , H01L2224/16014 , H01L2224/16058 , H01L2224/16145 , H01L2224/16227 , H01L2224/16238 , H01L2224/16503 , H01L2224/16507 , H01L2224/81007 , H01L2224/81048 , H01L2224/81143 , H01L2224/81193 , H01L2224/8181 , H01L2224/8182 , H01L2224/81862 , H01L2224/81895 , H01L2224/81903 , H01L2224/81905 , H01L2224/94 , H01L2924/01029 , H01L2924/01051 , H01L2924/01327 , H01L2924/364 , H01L2224/11 , H01L2224/81 , H01L2924/00014 , H01L2924/2064

摘要： An apparatus relates generally to a microelectronic device. In such an apparatus, a first substrate has a first surface with first interconnects located on the first surface, and a second substrate has a second surface spaced apart from the first surface with a gap between the first surface and the second surface. Second interconnects are located on the second surface. Lower surfaces of the first interconnects and upper surfaces of the second interconnects are coupled to one another for electrical conductivity between the first substrate and the second substrate. A conductive collar is around sidewalls of the first and second interconnects, and a dielectric layer is around the conductive collar.

摘要翻译： 一种装置一般涉及一种微电子装置。在这样的装置中，第一基板具有第一表面，第一互连位于第一表面上，第二基板具有与第一表面间隔开的第二表面，第一表面与第二表面之间具有间隙。第二互连位于第二表面上。第一互连件的下表面和第二互连件的上表面彼此耦合，用于在第一基板和第二基板之间的导电性。导电套环在第一和第二互连的侧壁周围，并且电介质层围绕导电套环。