专利检索 cpc:"H01L2924/2011" 第 8 页

71.

发明申请
ALUMINUM COATED COPPER BOND WIRE AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：铝镀铜铜线及其制造方法

公开(公告)号：US20150098170A1

公开(公告)日：2015-04-09

申请号：US14399446

申请日：2013-05-07

申请人： Heraeus Materials Technology GmbH & Co. KG

发明人： Eugen Milke , Peter Prenosil , Sven Thomas

IPC分类号： H01B1/02 , H01B13/00 , H01L23/00 , C22F1/08

CPC分类号： H01B1/026 , C22F1/08 , H01B1/023 , H01B13/00 , H01B13/0016 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/43 , H01L2224/43848 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45624 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2224/85205 , H01L2224/85424 , H01L2924/00011 , H01L2924/00015 , H01L2924/01015 , H01L2924/01047 , H01L2924/01322 , H01L2924/1203 , H01L2924/12041 , H01L2924/12043 , H01L2924/1304 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/2076 , H01L2924/01203 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/00014 , H01L2924/01012 , H01L2924/01014 , H01L2924/01028 , H01L2924/00 , H01L2924/013 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/00013 , H01L2924/00012 , H01L2924/01049 , H01L2924/01006

摘要： The invention relates to a wire, preferably a bonding wire for bonding in microelectronics, containing a copper core with a surface and a coating layer containing aluminum superimposed over the surface of the core. In any cross-sectional view of the wire, the area share of the coating layer is from 20 to 50% based on the total area of the cross-section of the wire, and the aspect ratio between longest and shortest paths through the wire is from larger than 0.8 to 1.0. The wire has a diameter of from 100 μm to 600 μm. The invention further relates to a process for making a wire, to a wire obtained by the process, to an electric device containing at least two elements and the wire, to a propelled device containing the electric device, and to a process of connecting two elements through the wire by wedge bonding.

摘要翻译： 本发明涉及一种电线，优选用于在微电子学中接合的接合线，其中包含具有表面的铜芯和包含叠加在芯的表面上的铝的涂层。在线的任何横截面图中，涂层的面积份额基于导线横截面的总面积为20-50％，并且通过导线的最长和最短路径之间的纵横比为大于0.8至1.0。线材的直径为100μm〜600μm。本发明还涉及一种将通过该方法获得的线材的线材制造成包含至少两个元件和电线的电气设备到包含电气设备的推进设备的方法，以及连接两个元件的过程通过电线通过楔形键合。

72.

发明授权
Bonding structure of multilayer copper bonding wire 有权
标题翻译：多层铜接合线的接合结构

公开(公告)号：US08836147B2

公开(公告)日：2014-09-16

申请号：US13877224

申请日：2011-09-29

申请人： Tomohiro Uno , Takashi Yamada , Atsuo Ikeda

发明人： Tomohiro Uno , Takashi Yamada , Atsuo Ikeda

IPC分类号： H01L23/48 , H01L25/065 , B23K20/00 , H01L23/00 , H01B1/02

CPC分类号： H01B1/026 , B23K20/007 , H01L23/48 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L24/85 , H01L25/0657 , H01L2224/05624 , H01L2224/32145 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48465 , H01L2224/4851 , H01L2224/48511 , H01L2224/48599 , H01L2224/48799 , H01L2224/48824 , H01L2224/73265 , H01L2224/76268 , H01L2224/781 , H01L2224/78268 , H01L2224/85045 , H01L2224/85203 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85464 , H01L2225/0651 , H01L2225/06565 , H01L2924/00011 , H01L2924/00015 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/12041 , H01L2924/3025 , Y02P70/605 , H01L2224/45678 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2224/45144 , H01L2924/20752 , H01L2924/01204 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01083 , H01L2924/013 , H01L2924/00013

摘要： A bonding structure of a ball-bonded portion is obtained by bonding a ball portion formed on a front end of a multilayer copper bonding wire. The multilayer copper bonding wire includes a core member that is mainly composed of copper, and an outer layer that is formed on the core member and is mainly composed of at least one noble metal selected from a group of Pd, Au, Ag and Pt. Further, a first concentrated portion of such noble metal(s) is formed in a ball-root region located at a boundary with the copper bonding wire in a surface region of the ball-bonded portion.

摘要翻译： 通过将形成在多层铜接合线的前端上的球部接合而获得球接部分的接合结构。多层铜键合线包括主要由铜构成的芯构件和形成在芯构件上的外层，主要由选自Pd，Au，Ag和Pt中的至少一种贵金属构成。此外，在与球形接合部的表面区域中的铜接合线的边界处的球根区域中形成有这种贵金属的第一集中部分。

73.

发明申请
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：半导体器件及其生产方法

公开(公告)号：US20140110740A1

公开(公告)日：2014-04-24

申请号：US14144111

申请日：2013-12-30

申请人： Nichia Corporation

发明人： Masafumi KURAMOTO , Satoru OGAWA , Miki NIWA

IPC分类号： H01L33/62 , H01L33/44

CPC分类号： H01L33/44 , H01L23/08 , H01L23/293 , H01L23/49579 , H01L23/49582 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/83 , H01L33/62 , H01L2224/05568 , H01L2224/16 , H01L2224/16225 , H01L2224/2712 , H01L2224/2745 , H01L2224/275 , H01L2224/29023 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29187 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/45144 , H01L2224/73265 , H01L2224/83048 , H01L2224/83055 , H01L2224/83075 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83207 , H01L2224/83439 , H01L2224/83487 , H01L2224/8383 , H01L2224/8384 , H01L2224/83894 , H01L2224/83895 , H01L2224/83896 , H01L2224/83907 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0541 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/1576 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/201 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/3025 , H01L2933/0066 , H01S5/0226 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/48 , H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

74.

发明授权
Semiconductor device and production method therefor 有权
标题翻译：半导体装置及其制造方法

公开(公告)号：US08642392B2

公开(公告)日：2014-02-04

申请号：US12691947

申请日：2010-01-22

申请人： Masafumi Kuramoto , Satoru Ogawa , Miki Niwa

发明人： Masafumi Kuramoto , Satoru Ogawa , Miki Niwa

IPC分类号： H01L21/44

CPC分类号： H01L33/44 , H01L23/08 , H01L23/293 , H01L23/49579 , H01L23/49582 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/83 , H01L33/62 , H01L2224/05568 , H01L2224/16 , H01L2224/16225 , H01L2224/2712 , H01L2224/2745 , H01L2224/275 , H01L2224/29023 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29187 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/45144 , H01L2224/73265 , H01L2224/83048 , H01L2224/83055 , H01L2224/83075 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83207 , H01L2224/83439 , H01L2224/83487 , H01L2224/8383 , H01L2224/8384 , H01L2224/83894 , H01L2224/83895 , H01L2224/83896 , H01L2224/83907 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0541 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/1576 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/201 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/3025 , H01L2933/0066 , H01S5/0226 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/48 , H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

75.

发明申请
BONDING STRUCTURE OF BONDING WIRE 有权
标题翻译：粘接线的结合结构

公开(公告)号：US20110104510A1

公开(公告)日：2011-05-05

申请号：US12866797

申请日：2009-07-10

申请人： Tomohiro Uno , Takashi Yamada , Atsuo Ikeda

发明人： Tomohiro Uno , Takashi Yamada , Atsuo Ikeda

IPC分类号： B23K35/22

CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/4312 , H01L2224/4321 , H01L2224/4382 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48091 , H01L2224/4847 , H01L2224/48471 , H01L2224/48475 , H01L2224/48486 , H01L2224/48499 , H01L2224/48507 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85051 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85986 , H01L2225/06562 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/3025 , H01L2924/351 , Y10T428/12222 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01001 , H01L2924/01203 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20652 , H01L2924/20655 , H01L2924/20645 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/01049

摘要： The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof. The bonding structure comprises a concentrated layer A provided at an interface of a bonding part of the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and a concentrated layer B provided at an interface of a bonding part of the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump.

摘要翻译： 本发明的目的在于提供铜基接合线的接合结构，实现低材料成本，在反向接合中的连续接合中的高生产率，用于凸块上的楔形接合，以及在高温加热，热循环中具有优异的可靠性测试，回流测试，HAST测试等。接合结构用于将接合线连接到形成在半导体器件的电极上的球凸点，接合线和分别包含铜作为其主要成分的球凸块。接合结构包括设置在球凸块的接合部分和接合线的界面处的浓缩层A，其中浓缩层A中的铜以外的金属R的浓度不小于铜的平均浓度的十倍球碰撞中的金属R; 以及集中层B，设置在所述球凸块的接合部的界面和所述电极之间，所述浓缩层B中的所述金属R的浓度不小于所述球凸块中的金属R的平均浓度的十倍。

76.

发明申请
COPPER ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：铜合金接线用于半导体器件

公开(公告)号：US20110011618A1

公开(公告)日：2011-01-20

申请号：US12892122

申请日：2010-09-28

申请人： Tomohiro UNO , Keiichi Kimura , Takashi Yamada

发明人： Tomohiro UNO , Keiichi Kimura , Takashi Yamada

IPC分类号： H01B5/00

CPC分类号： H01L24/85 , B23K35/302 , B23K2103/12 , C22C9/00 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/05639 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45647 , H01L2224/45663 , H01L2224/45687 , H01L2224/45693 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/10253 , H01L2924/20752 , H01L2924/20755 , H01L2924/20756 , H01L2924/01008 , H01L2924/01004 , H01L2924/01013 , H01L2924/01025 , H01L2924/01039 , H01L2924/00015 , H01L2924/00 , H01L2924/013 , H01L2924/00014 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01055 , H01L2924/00013

摘要： The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

摘要翻译： 本发明提供了一种廉价的材料成本的半导体器件铜合金接合线，确保了优异的球接合形状，线接合特性等，并且具有良好的环形成特性，并且具有优异的批量生产率。半导体装置铜合金接合线含有总共10〜700质量ppm的Mg和P中的至少一种，氧在6〜30质量ppm的范围内。

77.

发明申请
Ultrahigh-Purity Copper and Process for Producing the Same, and Bonding Wire Comprising Ultrahigh-Purity Copper 审中-公开
标题翻译：超高纯度铜及其制造方法，以及包含超高纯度铜

公开(公告)号：US20090272466A1

公开(公告)日：2009-11-05

申请号：US11915628

申请日：2006-04-24

申请人： Yuichiro Shindo , Kouichi Takemoto

发明人： Yuichiro Shindo , Kouichi Takemoto

IPC分类号： C22C9/00 , C25D21/06 , C25D3/38

CPC分类号： C22B15/0084 , C22B15/0073 , C22B15/0089 , C22C9/00 , C25C1/12 , C25C7/06 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/456 , H01L2224/48624 , H01L2924/00011 , H01L2924/01105 , H01L2924/01208 , H01L2924/10253 , H01L2924/14 , Y02P10/236 , H01L2924/01008 , H01L2924/01015 , H01L2924/01016 , H01L2924/01205 , H01L2924/01046 , H01L2924/00014 , H01L2224/45647 , H01L2224/48824 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/2011 , H01L2924/20111 , H01L2924/01033 , H01L2924/01001 , H01L2924/01006 , H01L2924/01007

摘要： Provided is ultrahigh purity copper having a hardness of 40 Hv or less, and a purity of 8N or higher (provided that this excludes the gas components of O, C, N, H, S and P). With this ultrahigh purity copper, the respective elements of O, S and P as gas components are 1 wtppm or less. Also provided is a manufacturing method of ultrahigh purity copper based on two-step electrolysis using an electrolytic solution comprised of copper nitrate solution, including the procedures of adding hydrochloric acid in an electrolytic solution comprised of copper nitrate solution; circulating the electrolytic solution; and performing two-step electrolysis while eliminating impurities with a filter upon temporarily setting the circulating electrolytic solution to a temperature of 10° C. or less. The present invention provides a copper material that is compatible with the thinning (wire drawing) of the above, and is capable of efficiently manufacturing ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher, providing the obtained ultrahigh purity copper, and providing a bonding wire for use in a semiconductor element that can be thinned.

摘要翻译： 提供硬度为40Hv或更低，纯度为8N以上的超高纯度铜（不包括O，C，N，H，S和P的气体成分）。使用该超高纯度铜，作为气体成分的O，S，P的各元素为1重量ppm以下。还提供了使用由硝酸铜溶液组成的电解液的两步电解的超高纯度铜的制造方法，包括在由硝酸铜溶液构成的电解液中加入盐酸的工序; 循环电解液; 并且在将循环电解液临时设定为10℃以下的温度的同时，用过滤器除去杂质，进行两步电解。本发明提供一种与上述变薄（拉丝）相容的铜材料，能够有效地制造纯度为8N（99.999999重量％）以上的超高纯度铜，提供所得到的超高纯度铜，以及提供用于可以变薄的半导体元件的接合线。

78.

发明申请
Bonding wire 审中-公开
标题翻译：粘接线

公开(公告)号：US20040245320A1

公开(公告)日：2004-12-09

申请号：US10493244

申请日：2004-04-21

发明人： Mesato Fukagaya , Shingo Kaimori , Tsuyoshi Nonaka , Masanori Ioka

IPC分类号： B23K001/06

CPC分类号： H01L24/43 , H01L24/45 , H01L24/78 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48639 , H01L2224/48839 , H01L2224/781 , H01L2224/78268 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/0104 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/1304 , H01L2924/14 , H01L2924/20752 , H01L2924/3025 , H01L2924/3862 , H01L2924/01204 , H01L2924/01205 , H01L2924/01003 , H01L2924/01082 , H01L2924/01048 , H01L2924/00014 , H01L2224/45644 , H01L2924/01203 , H01L2924/01001 , H01L2924/01046 , H01L2924/2011 , H01L2924/20108 , H01L2924/20109 , H01L2924/20111 , H01L2924/20751 , H01L2924/20753 , H01L2924/20754 , H01L2924/01004 , H01L2924/01026 , H01L2924/01008 , H01L2924/20654 , H01L2924/20652 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/01006 , H01L2924/01033

摘要： A bonding wire having a core mainly consisting of copper and a coating layer formed on the core, wherein the coating layer is made of an oxidation-resistant metal having a melting point higher than that of copper, and the elongation of this bonding wire per unit sectional area is 0.021%/nullm2 or more; and a bonding wire having a core mainly consisting of copper and a coating layer formed on the core, wherein the coating layer is made of a metal having oxidation resistance higher than that of copper, and the relationship of 0.007nullXnull0.05 is satisfied wherein an area ratio X is (the area of the coating layer/the area of the core at the section of wire being cut vertically) are provided. The bonding wires thus provided are inexpensive and excellent in ball formation characteristic and bonding characteristic. Further, a ball bonding method characterized in using the above bonding wire is also provided.

摘要翻译： 一种具有主要由铜构成的芯和在芯上形成的涂层的接合线，其中，涂层由熔点高于铜的抗氧化金属制成，并且每单位的该接合线的伸长率截面积为0.021％/ m 2以上; 以及具有主要由铜构成的芯和在芯上形成的涂层的接合线，其中，所述涂层由耐氧化性高于铜的金属制成，并且0.007≤X<= 0.05的关系为满足其中面积比X是（涂层的面积/芯线的垂直截面处的芯部的面积）。由此提供的接合线便宜并且球形成特性和接合特性优异。此外，还提供了使用上述接合线的球接合方法。